LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
FEATURES
* High current transfer ratio
( CTR : MIN. 600% at IF = 1mA, VCE = 2V )
* High input-output isolation voltage
( Viso = 5,000Vrms )
* Response time
( tr : TYP. 60µs at VCE = 2V, IC = 10mA, RL = 100Ω )
* Dual-in-line package :
LTV-815 : 1-channel type
LTV-825 : 2-channel type
LTV-845 : 4-channel type
* Wide lead spacing package :
LTV-815M : 1-channel type
LTV-825M : 2-channel type
LTV-845M : 4-channel type
* Surface mounting package :
LTV-815S : 1-channel type
LTV-825S : 2-channel type
LTV-845S : 4-channel type
* Tape and reel packaging :
LTV-815S-TA1, LTV-825S-TA1
* UL approved ( No. E113898 )
* TUV approved ( No. R9653630 )
* CSA approved ( No. CA91533-1 )
* FIMKO approved ( No. 193422-01 )
* NEMKO approved ( No. P96103013 )
* DEMKO approved ( No. 303986 )
* SEMKO approved ( No. 9646047 / 01-30 )
* VDE approved ( No. 094722 )
Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 1 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-815 :
LTV-825 :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 2 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-845 :
LTV-815M :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 3 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-825M :
LTV-845M :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 4 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-815S :
LTV-825S :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 5 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-845S :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 6 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
TAPING DIMENSIONS
LTV-815S-TA1 :
LTV-825S-TA1 :
Description Symbol Dimensions in mm ( inches )
Tape wide W 16 ± 0.3 ( .63 )
Pitch of sprocket holes P0 4 ± 0.1 ( .15 )
Distance of compartment F
P2 7.5 ± 0.1 ( .295 )
2 ± 0.1 ( .079 )
Distance of compartment to compartment P1 12 ± 0.1 ( .472 )
Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 7 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ABSOLUTE MAXIMUM RATING
( Ta = 25°C )
PARAMETER SYMBOL RATING UNIT
Forward Current IF 50 mA
Reverse Voltage VR 6 V
INPUT
Power Dissipation P 70 mW
Collector - Emitter Voltage VCEO 35 V
Emitter - Collector Voltage VECO 6 V
Collector Current IC 80 mA
OUTPUT
Collector P ower Dissipation PC 150 mW
T otal Power Dissipation Ptot 200 mW
*1 Isolation Voltage Viso 5,000 Vrms
Operating Temperature Topr -30 ~ +100 °C
Storage Temperature Tstg -55 ~ +125 °C
*2 Soldering Temperature Tsol 260 °C
*1. AC For 1 Minute, R.H. = 40 ~ 60%
Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and
emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
*2. For 10 Seconds
Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 8 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ELECTRICAL - OPTICAL CHARACTERISTICS
( Ta = 25°C )
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Forward Voltage VF — 1.2 1.4 V IF=20mA
Reverse Current IR — — 10
µA VR=4V
INPUT
Terminal Capacitance Ct — 30 250 pF V=0, f=1KHz
Collector Dark Current ICEO — — 1 µA VCE=10V, IF=0
Collector-Emitter
Breakdown Voltage BVCEO 35 — — V
IC=0.1mA
IF=0
OUTPUT
Emitter-Collector
Breakdown Voltage BVECO 6 — — V
IE=10µA
IF=0
Collector Current IC 6 — 75 mA
* Current T ransfer Ra tio CTR 600 — 7,500 %
IF=1mA
VCE=2V
Collector-Emitter
Saturation Voltage VCE(sat) — 0.8 1 V
IF=20mA
IC=5mA
Isolation Resistance Riso 5×1010 1×1011 — Ω DC500V
40 ~ 60% R.H.
Floating Capacitance Cf — 0.6 1 pF V=0, f=1MHz
Cut-Off Frequency fc 1 6 — kHz
VCE=5V, IC=2mA
RL=100Ω, -3dB
Response Time (Rise) tr — 60 300 µs
TRANSFER
CHARACTERISTICS
Response Time (Fall) tf — 53 250 µs
VCE=2V, IC=10mA
RL=100Ω
* CTR I
I100%
C
F
=×
Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 9 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.1 Forward Current vs . Ambient Fig. 2 Coll ector Power Dissipation vs.
Ambient Temperature
Fig.4 Forwar d Current vs. Forward
Fig.5 Current Transfer Ratio vs. Forward
Current Fig.6 Collector Current vs.
Collector-emitter Voltage
F
FCE
F
F
0-30
0
Ta= 75 C
50 C 25 C
0 C
-25 C
V = 2V
Ta= 25 C
CE T a= 25 C
I = 10mA
Pc(MAX.)
5mA
2mA
1mA
Fig.3 Collector-emitt er Saturation
Voltage vs. Forward Current
F
CE
Ic=0.5mA1mA
3mA7mA
5mA
Ta= 25 C
30mA
50mA
Temperature
Forward current I (mA)
Collector power dissipation Pc (mW)
Forward current I (mA)
Collector-emitter saturation voltage
V (sat)
Collector current Ic (mA)
Current transfer ratio CTR (%)
Ambient temperature T a ( C) Ambient temperature T a ( C)
Forward voltage V (V)Forward current I (mA )
Forward current I (mA) Collector-emitter voltage V (V)
oo
0 25 50 75 100 125
10
20
30
40
50
60
-30
00 12525 50 75 100
50
100
150
200
00 0.5 1.0 1.5 2.0 2.5 4.03.0 3.5
1
2
3
4
5
6
7
8o
0
10.5 1.0 3.01.5 2.0 2.5
2
5
10
20
50
100
200
500 o
oo
o
o
0
0.1 0.2 0.5 1 2 5 10
400
800
1200
1600
2000
0
20
40
60
80
100
12345
OO
Voltage
F
Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 10 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature Fig.8 Collector-emitter Saturation Voltage
Fig.9 Collector Dark Current vs.
Ambient Temperature Fig.10 Response Time vs. Load
Fig.11 Frequency Response
0-30
CE
1k
V = 10V
CE Ta= 25 C tr tf
td
ts
vs. Ambient Temperature
Ambient temperature T a ( C) Ambient temperature T a ( C )
Ambient temperature T a ( C)
Fre quency f (kHz)
Collector-emitter saturation voltage
V (sat) (V)
-10
o
100
o
o o
o
0 255075100
50
100
150
-20
0
0.2
0.4
0.6
0.8
1.0
0 20406080100
10 -25 0.2
0.050 255075100
10
10
10
10
10
10
-9
-8
-7
-6
-5
-11
0.1 0.2 0.5 1 2 5 10
0.5
1
2
5
10
20
50
100
200
500
0.02
-20
-10
0
0.1 10 1001
Resistance
Test Circuit for Response Time
Test Circuit for Frequency Response
Input Output
Input
Output
Vcc
td
tr tf
ts 90%
10%
Collecotr dark current I
CEO
(A)Relative current transfer ratio (%)
Response time (s)
Voltage gain Av (dB)
Load resistance RL(k )
RL
RD
RL
RDOutput
Vcc
IF=1mA
VCE=2V IF=20mA
IC=5mA
VCE=2V
IC=10mA
VCE=2V
IC= 2mA
Ta= 25 C
Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 11 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)
Unit : mm
4 PIN 8 PIN
16 PIN
Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 12 of 12
BNS-OD-C131/A4