2007-04-19
1
SMBT2222A/MMBT2222A
12
3
NPN Silicon Switching Transistor
• Low collector-emitter saturation voltage
• Complementary type: SMBT2907AW (PNP)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
Type Marking Pin Configuration Package
SMBT2222A/MMBT2222A s1P 1 = B 2 = E 3 = C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 40 V
Collector-base voltage VCBO 75
Emitter-base voltage VEBO 6
Collector current IC600 mA
Total power dissipation-
TS ≤ 77 °C Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS ≤ 220 K/W
1Pb-containing package may be available upon special request
2For calculation of RthJA please refer to Application Note Thermal Resistance
2007-04-19
2
SMBT2222A/MMBT2222A
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 V(BR)CEO 40 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0 V(BR)CBO 75 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 6 - -
Collector-base cutoff current
VCB = 60 V, IE = 0
VCB = 60 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.01
10
µA
Emitter-base cutoff current
VEB = 3 V, IC = 0 IEBO - - 10 nA
DC current gain1)
IC = 100 µA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 1 V
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
hFE
35
50
75
50
100
40
-
-
-
-
-
-
-
-
-
-
300
-
-
Collector-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VCEsat
-
-
-
-
0.3
1
V
Base emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VBEsat
0.6
-
-
-
1.2
2
1Pulse test: t < 300µs; D < 2%
2007-04-19
3
SMBT2222A/MMBT2222A
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 20 V, f = 100 MHz fT300 - - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz Ccb - 2.5 5 pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz Ceb - - 35
Short-circuit input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
h11e
2
0.25
-
-
8
1.25
kΩ
Open-circuit reverse voltage transf. ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
h12e
-
-
-
-
8
4
10-4
Short-circuit forward current transf. ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
h21e
50
75
-
-
300
375
-
Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
h22e
5
25
-
-
35
200
µS
Delay time
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
td- - 10 ns
Rise time
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
tr- - 25
Storage time
VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA tstg - - 225
Fall time
VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA tf- - 60
Noise figure
IC = 100 µA, VCE = 10 V, f = 1 kHz,
∆ f = 200 Hz, RS = 1 kΩ
F- - 4 dB
2007-04-19
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SMBT2222A/MMBT2222A
Test circuit
Delay and rise time
EHN00055
200 Osc.
619
30
9.9
00.5
Ω
Ω
V
V
V
Storage and fall time
EHN00056
200 Osc.
1
30
16.2
0
-13.8
-3.0
µ500~s
s~100 µ< 5 ns
Ω
Ω
V
V
V
Vk
Oscillograph: R > 100Ω, C < 12pF, tr < 5ns
2007-04-19
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SMBT2222A/MMBT2222A
DC current gain hFE = ƒ(IC)
VCE = 10 V
EHP00743SMBT 2222/A
10
10 mA
h
C
10
5
FE
10
3
2
10
1
5
10 10 10
-1 0 1 2 3
Ι
-50 ˚C
25 ˚C
150 ˚C
Saturation voltage IC = ƒ(VBEsat; VCEsat)
hFE = 10
EHP00742SMBT 2222/A
10
0V
BE sat
mA
10
3
1
10
-1
5
10
0
5
V
0.2 0.4 0.6 0.8 1.0 1.2
CE sat
V,
5
10
2
V
BE
V
CE
Ι
C
Transition frequency fT = ƒ(IC)
VCE = 20 V
EHP00741SMBT 2222/A
10
10 10 mA
f
C
10
MHz
10
T
555
Ι
0123
10
3
2
10
1
5
2
2
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 5 10 15 V25
VCB(VEB
)
0
5
10
15
20
25
pF
35
CCB(CEB)
CCB
CEB
2007-04-19
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SMBT2222A/MMBT2222A
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00740SMBT 2222/A
-6
0
10
5
D
=
5
101
5
102
3
10
10-5 10-4 10-3 10-2 100
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tp
=
DT
tp
T
totmax
tot
PDC
P
p
t
Delay time td = ƒ(IC)
Rise time tr = ƒ(IC)
EHP00744SMBT 2222/A
10
ns
10 10 mA
t
C
10
5
10
d
555
Ι
0123
10
3
2
10
1
5
r
t,
h
FE
t
d
t
d
t
r
t
r
V
CC
= 30 V
= 10
V
BE
= 5 V
= 2 V
= 0 V
V
BE
V
BE
Storage time tstg = ƒ(IC)
Fall time tf = ƒ(IC)
EHP00745SMBT 2222/A
10
10 mA
C
5
10
3
2
10
1
5
10 10
12 3
Ι
5 5
ns
FE
h
h
FE
s
t
f
t
= 10
= 20
s
t t,
f
h
FE
= 10
2007-04-19
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SMBT2222A/MMBT2222A
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25 MBC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2007-04-19
8
SMBT2222A/MMBT2222A
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
