SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE BVcEo hee VcE(sat) fr C&yp @ 10V Ic Device Type @ 10mA Typical 1MHz Continuous @25C (Vv) Min. Max. @ Ic{mA) Voce (v) Max. @ le (mA) Ig (mA) (MHz) Typical (Pe) (mA) (mW) GES5819 40 150 GES5820 60 125 GES5821 60 125 MPSAO5 60 100 MPSA06E 80 100 MPSA12 20 50 MPSA13 30 50 MPSA14 _ 30 50 MPSA20 40 MPSA5S_ 60 4 100 MPSA56 : 80 100 MPSA65 | , 30 MPSA66 30 MPS3638 25 MPS3638A 25 MPS3702 | | 26 MPS3703 30 MPS3704 30 MPS3705 30 MPS3706 20 MPS5172 25 MPS6076 | 25 MPS6512 30 MPS6513 30 MPS6514 | 25 MPS6515 25 MPS6516 40 MPS6517 40 MPS6518 MPS6519 MPS6530 MPS6531 MPS6532 MPS6533 MPS6534 MPS6535 MPS6565 MPS6566 D39C1-6 D38H1-6 0391-6 D38L1-6 D38S1-10 D38Y1-3 D38ws-11 105 > SILICON SIGNAL TRANSISTORS 4 COMPLEMENTARY PAIRS jy TO0-92 PACKAGE Mi DEVICE BVcEo hee VcE(SAT) NPN PNP (v) MIN.-MAX. @ Ico, Vee (V) (Vv) MAX. @ tc, I 50- 1001 100mA 1 COMPLEMENT 100mA MPS3703 50mA PS$3704 MPS3703 MPS6512 Me eeet 6 i 14 1 M 1 MPS6515 250-500 MPS6519 50-100 90-180 MPS6513 150-300 MPS6514 15 120 90-270 MPS6533 1 MPS6530 MPS6534 90-270 100-500 MPS60 76 76 1 1 60-500 D D38L1-3 D -3 D38L4-6 D39C4-6 108 Silicon . [=> [Tr =] Transistors = MPS5172 |MPS6076 The General Electric MPS5172 and MPS6076 transistors are designed for general purpose applications. The planar, passi- vated construction assures excellent device stability and life. This high performance and high value is made possible by advanced manufacturing techniques, epoxy encapsulation and utilization of full line beta distribution. Significant savings may be realized by designing equipment utilizing these full 5, COLLECTOR line distribution type transistors. TO-92 |.EMITTER absolute maximum ratings: (Ta = 25C unless otherwise specified) Voltages Collector to Emitter Vero 25 Volts 407| 482ifol6foisl 3 Collector to Base Vcpo 25 Volts : Emitter to Base VeRO 5 Volts Current Collector (Steady-State)} Ic 100 mA Dissipation Total Power Ta < 25CTt Pr 360 mW Temperature s Storage Tstg -S5to +150 C Noe LEADS Operating . Ty +125 C 2.CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE lead (1/16 + 1/32" from Ty +260 C 3 (THREE TEADS) 6b APPLIES BETWEEN Ly ANDO Lo. case for 10 sec. max.) #b APPLIES BETWEEN Lo AND (2.70 MM (.500"} } Determined from power limitations due to saturation voltage at this FROM THE SEATING PLANE. DIAMETER IS UN- current. CONTROLLED IN L, AND BEYOND [2.70 MM (.500") ++Derate 3.6 mW/C increase in ambient temperature above 25C. FROM SEATING PLANE. electrical characteristics: (T, = 25C unless otherwise specified) Static Characteristics SYMBOL MIN. MAX. UNITS Collector Cutoff Current (Voz = 25V) Icpo _ 100 nA (Veg = 25V; Ta = 100C) IcBo o 10 BLA (Vop = 25V) Icrs _ 100 nA Emitter Cutoff Current (Vep = 5V) - MPSS5172 lgpo _ 100 nA (Vep = 3V) ~_ MPS6076 lgBo _ 100 nA Forward Current Transfer Ratio (Veg = 10V, Ic = 10 mA) Shepp 100 500 Collector-Emitter Breakdown Voltage (Ic = 10 mA) ViBR)CEO 25 _ Volts Collector Saturation Voltage (Ic = 10 mA, Ip = 1 mA) VoK(sat) _ 25 Volts Base Saturation Voltage (Ic = 10 mA, Iz = 1 mA) VpE(sat) _ .80 Volts Base Emitter Voltage) (Vcr = 10V, Ic = 10mA) VBE 0.5 1.2 Volts Dynamic Characteristics Forward Current Transfer Ratio (Vor = 10V, Ic = 10mA, f = 1 kHz) Nee 100 750 Output Capacitance, Common Base (Vcp = 10V, Ip = 0, f = 1 MHz) Cot 1.0 13 pF Gain Bandwidth Product (Vcp = SV, Ic = 2mA) fy (Typical 200) MHz Typically a minimum of 50% of the distribution will have hyp > 150 at stated conditions. Note: Polarities are Absolute. 1364