UNISONIC TECHNOLOGIES CO., LTD
2SD669/A NPN SILICON TRANSISTOR
www.unisonic.com.tw 1 of 5
Copyright © 2008 Unisonic Technologies Co., Ltd QW-R204-005,F
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
APPLICATIONS
* Low frequency power amplifier complementar y pair with
UTC 2SB649/A
Lead-free: 2SD669L/2SD669AL
Halogen-free: 2SD669G/2SD669AG
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Plating Halogen-Free Package 1 2 3 Packing
2SD669-x-AA3-R 2SD669L-x-AA3-R 2SD669G-x-AA3-R SOT-223 B C E Tape Reel
2SD669-x-AB3-R 2SD669L-x-AB3-R 2SD669G-x-AB3-R SOT-89 B C E Tape Reel
2SD669-x-T60-K 2SD669L-x-T60-K 2SD669G-x-T60-K TO-126 E C B Bulk
2SD669-x-T6C-K 2SD669L-x-T6C-K 2SD669G-x-T6C-K TO-126C E C B Bulk
2SD669-x-T92-B 2SD669L-x-T92-B 2SD669G-x-T92-B TO-92 E C B Tape Box
2SD669-x-T92-K 2SD669L-x-T92-K 2SD669G-x-T92-K TO-92 E C B Bulk
2SD669-x-T9N-B 2SD669L-x-T9N-B 2SD669G-x-T9N-B TO-92NL E C B Tape Box
2SD669-x-T9N-K 2SD669L-x-T9N-K 2SD669G-x-T9N-K TO-92NL E C B Bulk
2SD669-x-T9N-R 2SD669L-x-T9N-R 2SD669G-x-T9N-R TO-92NL E C B Tape Reel
2SD669-x-TM3-T 2SD669L-x-TM3-T 2SD669G-x-TM3-T TO-251 E C B Tube
2SD669-x-TN3-R 2SD669L-x-TN3-R 2SD669G-x-TN3-R TO-252 B C E Tape Reel
2SD669-x-TN3-T 2SD669L-x-TN3-T 2SD669G-x-TN3-T TO-252 B C E Tube
2SD669/A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 5
www.unisonic.com.tw QW-R204-005,F
ORDERING INFORMATION(Cont.)
Ordering Number Pin Assignment
Normal Lead Free Plating Halogen-Free Plating Package 1 2 3 Packing
2SD669A-x-AA3-R 2SD669AL-x-AA3-R 2SD669AG-x-AA3-R SOT-223 B C E Tape Reel
2SD669A-x-AB3-R 2SD669AL-x-AB3-R 2SD669AG-x-AB3-R SOT-89 B C E Tape Reel
2SD669A-x-T60-K 2SD669AL-x-T60-K 2SD669AG-x-T60-K TO-126 E C B Bulk
2SD669A-x-T6C-R 2SD669AL-x-T6C-R 2SD669AG-x-T6C-R TO-126C E C B Bulk
2SD669A-x-T92-B 2SD669AL-x-T92-B 2SD669AG-x-T92-B TO-92 E C B Tape Box
2SD669A-x-T92-K 2SD669AL-x-T92-K 2SD669AG-x-T92-K TO-92 E C B Bulk
2SD669A-x-T9N-B 2SD669AL-x-T9N-B 2SD669AG-x-T9N-B TO-92NL E C B Tape Box
2SD669A-x-T9N-K 2SD669AL-x-T9N-K 2SD669AG-x-T9N-K TO-92NL E C B Bulk
2SD669A-x-T9N-R 2SD669AL-x-T9N-R 2SD669AG-x-T9N-R TO-92NL E C B Tape Reel
2SD669A-x-TM3-T 2SD669AL-x-TM3-T 2SD669AG-x-TM3-T TO-251 E C B Tube
2SD669A-x-TN3-R 2SD669AL-x-TN3-R 2SD669AG-x-TN3-R TO-252 B C E Tape Reel
2SD669A-x-TN3-T 2SD669AL-x-TN3-T 2SD669AG-x-TN3-T TO-252 B C E Tube
2SD669/A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3 of 5
www.unisonic.com.tw QW-R204-005,F
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 180 V
2SD669 120
Collector-Emitter Voltage 2SD669A VCEO 160 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 1.5 A
Collector Peak Current lC(PEAK) 3 A
Collector Power Dissipation SOT-223 0.5 W
Collector Power Dissipation TO-126 PD 1 W
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -40 ~ +150 ℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device op eration is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector to Base Breakdown Voltage BVCBO IC=1mA, IE=0 180 V
2SD669 120 Collector to Emitter Breakdown
Voltage 2SD669A BVCEO IC=10mA, RBE=∞ 160 V
Emitter to Base Breakdown Voltage BVEBO IE=1mA, IC=0 5 V
Collector Cut-off Current ICBO V
CB=160V, IE=0 10 μA
hFE1 V
CE=5V, IC=150mA (Note) 60 320
DC Current Gain hFE2 V
CE=5V, IC=500mA (Note) 30
Collector-Emitter Saturation Voltage VCE(SAT) IC=600mA, IB=50mA (Note) 1 V
Base-Emitter Voltage VBE V
CE=5V, IC=150mA (Note) 1.5 V
Current Gain Bandwidth Product fT V
CE=5V, IC=150mA (Note) 140 MHz
Output Capacitance Cob V
CB=10V, IE=0, f=1MHz 14 pF
Note: Pulse test.
CLASSIFICATION OF hFE1
RANK B C D
RANGE 60-120 100-200 160-320
2SD669/A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 4 of 5
www.unisonic.com.tw QW-R204-005,F
TYPICAL CHARACTERISTICS
DC Current Transfer Ratio, hFE
Collector to emitter saturation
voltage, VCE(SAT) (V)
25
T
C
=-20
IC=10IB
25
75
1 3 10 30 100 300 1,000
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current, IC(mA)
Base to Emitter Saturation Voltage
vs. Collector Current
10 30 100 300 1,000
Collector Current, IC(mA)
0
40
80
120
160
200
240
Gain Bandwidth Product
vs. Collector Current
VCE=5V
Ta=25℃
1510 5020 100
2
2
5
10
20
50
100
200
Collector to Base Voltage, VCB (V)
Collector Output Capacitan c e
vs. Collector to Base Voltage
f=1MHz
IE=0
DC Operation (TC=25℃)
(13.3V, 1.5A)
40V, 0.5A
(120V, 0.04A)
(160V, 0.02A)
2SD669
2SD669A
Area of Safe Operation
Collector to Emitte r Volt ag e, VCE (V)
1310 100 300
0.01
0.03
0.1
0.3
1.0
3
30
Collector Current, IC(A)
2SD669/A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 5 of 5
www.unisonic.com.tw QW-R204-005,F
TYPICAL CHARAC TERI STICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not f orm part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
