2SD669/A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3 of 5
www.unisonic.com.tw QW-R204-005,F
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 180 V
2SD669 120
Collector-Emitter Voltage 2SD669A VCEO 160 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 1.5 A
Collector Peak Current lC(PEAK) 3 A
Collector Power Dissipation SOT-223 0.5 W
Collector Power Dissipation TO-126 PD 1 W
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -40 ~ +150 ℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device op eration is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector to Base Breakdown Voltage BVCBO IC=1mA, IE=0 180 V
2SD669 120 Collector to Emitter Breakdown
Voltage 2SD669A BVCEO IC=10mA, RBE=∞ 160 V
Emitter to Base Breakdown Voltage BVEBO IE=1mA, IC=0 5 V
Collector Cut-off Current ICBO V
CB=160V, IE=0 10 μA
hFE1 V
CE=5V, IC=150mA (Note) 60 320
DC Current Gain hFE2 V
CE=5V, IC=500mA (Note) 30
Collector-Emitter Saturation Voltage VCE(SAT) IC=600mA, IB=50mA (Note) 1 V
Base-Emitter Voltage VBE V
CE=5V, IC=150mA (Note) 1.5 V
Current Gain Bandwidth Product fT V
CE=5V, IC=150mA (Note) 140 MHz
Output Capacitance Cob V
CB=10V, IE=0, f=1MHz 14 pF
Note: Pulse test.
CLASSIFICATION OF hFE1
RANK B C D
RANGE 60-120 100-200 160-320