© 2004 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVCES IC= 250 µA, VGE = 0 V 1200 V
VGE(th) IC= 250 µA, VCE = VGE 2.5 5.0 V
ICES VCE = VCES TJ = 25°C25µA
VGE = 0 V TJ = 125°C 250 µA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15V 2.4 3.0 V
IGBT
Optimized for
switching up to 5KHz
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C24A
IC90 TC= 90°C12A
ICM TC= 25°C, 1 ms 48 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 100 Ω ICM = 24 A
(RBSOA) Clamped inductive load @ 0.8 VCES
PCTC= 25°C75W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MdMounting torque with screw M3 0.45/4 Nm/lb.in.
Mounting torque with screw M3.5 0.55/5 Nm/lb.in.
Weight TO-220 4 g
TO-263 2 g
DS99199(8/04)
Features
•International standard packages
JEDEC TO-220AB and TO-263AA
•Low VCE(sat)
- for minimum on-state conduction
losses
•MOS Gate turn-on
- drive simplicity
Applications
•AC motor speed control
•DC servo and robot drives
•DC choppers
•Uninterruptible power supplies (UPS)
•Switch-mode and resonant-mode
power supplies
•Capacitor discharge
Advantages
•Easy to mount with one screw
•Reduces assembly time and cost
•High power density
G
EC (TAB)
TO-263 AA (IXGA)
GCE
TO-220AB (IXGP)
IXGA 12N120A2
IXGP 12N120A2
Preliminary data sheet
VCES = 1200 V
IC25 = 24 A
VCE(sat) = 3.0 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGA12N120A2
IXGP12N120A2
TO-263 AA Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
Pins: 1 - Gate 2 - Collector
3 - Emitter 4 - Collector
Bottom Side
TO-220 AB Dimensions
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs IC= IC90 VCE = 10 V 4.0 7.8 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IC(on) VGE = 10 V, VCE = 10V 35 A
Cies 530 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 30 pF
Cres 4pF
Qg24 nC
Qge IC= IC90, VGE = 15 V, VCE = 0.5 VCES 5.5 nC
Qgc 8.8 nC
td(on) 15 ns
tri 30 ns
td(off) 680 1000 ns
tfi 650 1000 ns
Eoff 5.4 9.0 mJ
td(on) 15 ns
tri 30 ns
Eon 0.5 mJ
td(off) 700 ns
tfi 1050 ns
Eoff 7.7 mJ
RthJC 1.66 K/W
RthCK TO-220 0.5 K/W
Inductive load, TJ = 25°°
°°
°C
IC= IC90, VGE = 15 V
VCE = 960 V, RG = Roff = 100 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
Inductive load, TJ = 125°°
°°
°C
IC= IC90, VGE = 15 V
VCE = 960 V, RG = Roff = 100 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
© 2004 IXYS All rights reserved
IXGA12N120A2
IXGP12N120A2
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30
V
C E
- Volts
I
C
- Amperes
V
GE
= 15V
7V
9V
11V
13V
5V
Fig. 3. Output Characteristics
@ 125
º
C
0
2
4
6
8
10
12
14
16
18
20
22
24
0.511.522.533.544.55
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 1. Output Characteristics
@ 25
º
C
0
2
4
6
8
10
12
14
16
18
20
22
24
0.511.522.533.544.55
V
C E
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
5V
7V
9V
Fig. 4. Dependence of V
CE(sat)
on
Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
C E (sat)
- Normalize
d
I
C
= 12A
I
C
= 6A
V
GE
= 15V
I
C
= 24A
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
1
2
3
4
5
6
7
8
6 7 8 9 10 11 12 13 14 15 16
V
G E
- Volts
V
C E
- Volts
T
J
= 25
º
C
I
C
= 24A
12A
6A
Fig. 6. Input Adm ittance
0
3
6
9
12
15
18
21
24
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
V
G E
- Volts
I
C
- Amperes
T
J
= 125
º
C
25
º
C
-40
º
C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGA12N120A2
IXGP12N120A2
Fig. 7. Transconductance
0
1
2
3
4
5
6
7
8
9
10
11
0 3 6 9 121518212427
I
C
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 8. Dependence of Turn-off
Energy Loss on R
G
0
2
4
6
8
10
12
14
16
18
0 200 400 600 800 1000
R
G
- Ohms
E
o f f
- milliJoules
I
C
= 6A
T
J
= 25
º
C
V
GE
= 15V
V
CE
= 960V
I
C
= 12A
I
C
= 24A
Fig. 9. Dependence of Turn-Off
Energy Loss on I
C
0
2
4
6
8
10
12
14
16
6 9 12 15 18 21 24
I
C
- Amperes
E
o f f
- MilliJoules
R
G
=100Ω
V
GE
= 15V
V
CE
= 960V
T
J
= 25
º
C
Fig. 10. Dependence of Turn-off
Delay Tim e on R
G
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
0 200 400 600 800 1000
R
G
- Ohms
t
d ( o f f )
- microseconds
I
C
= 6A
12A
24A
V
GE
= 15V
V
CE
= 960V
T
J
= 25
º
C
Fig. 12. Dependence of Turn-off
Sw itching Tim e
on I
C
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
6 8 10 12 14 16 18 20 22 24
I
C
- Amperes
Switching Time -microseconds
t
d(off)
t
fi
- - - - -
R
G
= 100Ω
V
GE
= 15V
V
CE
= 960V
T
J
= 25
º
C
Fig. 11. Dependence of Turn-off
Current Fall Time on R
G
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0 200 400 600 800 1000
R
G
- Ohms
t
f i
- microseconds
I
C
= 24A
V
GE
= 15V
V
CE
= 960V
T
J
= 25
º
C
I
C
= 12A
I
C
= 6A
© 2004 IXYS All rights reserved
IXGA12N120A2
IXGP12N120A2
Fig. 13. Gate Charge
0
2
4
6
8
10
12
14
16
024681012141618202224
Q
G
- nanoCoulombs
V
G E
- Volts
V
CE
= 600V
I
C
= 12A
I
G
= 10mA
Fig. 15. Capacitance
1
10
100
1000
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Capacitance - p F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 14. Reverse-Bias Safe
Operating Area
0
5
10
15
20
25
30
100 300 500 700 900 1100 1300
V
C E
- Volts
I
C
- Amperes
T
J
= 125
º
C
R
G
= 100Ω
dV/dT < 10V/ns
Fig. 17. Maxim um Transient Therm al Resistance
0.10
1.00
10.00
0.1 1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
ºC / W
