PD-91398B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) IRHNA7360SE 400V, N-CHANNEL (R) TM RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20 ID 24A SMD-2 International Rectifier's RADHardTM HEXFET(R) MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n Absolute Maximum Ratings Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight Units 24 15 96 300 2.4 20 310 24 30 3.0 -55 to 150 A W W/C V mJ A mJ V/ns o C 300 (for 5 sec.) 3.3 (Typical) g For footnotes refer to the last page www.irf.com 1 08/04/05 IRHNA7360SE Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage 400 -- -- V -- 0.51 -- V/C -- -- 2.5 4.0 -- -- -- -- -- -- -- -- 0.20 0.21 4.5 -- 50 250 BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units V S( ) BVDSS A IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 100 -100 250 60 120 35 100 120 100 -- Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 4000 1000 460 -- -- -- nA nC Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 15A A VGS = 12V, ID = 24A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 15A A VDS= 320V ,VGS=0V VDS = 320V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 24A VDS = 200V VDD =200V, ID =24A, VGS =12V, RG = 2.35 ns Measured from the center of drain pad to center of source pad nH pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A -- -- -- -- 24 96 A VSD trr Q RR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- -- -- -- -- -- 1.4 750 14 V nS C ton Forward Turn-On Time Test Conditions Tj = 25C, IS = 24A, VGS = 0V A Tj = 25C, IF = 24A, di/dt 100A/s VDD 50V A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ M a x Units -- -- -- 1.6 0.42 -- C/W Test Conditions Soldered to a 2 inch sq. clad PC board Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Pre-Irradiation IRHNA7360SE International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads (Si) Min Max Units Test Conditions V Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source 400 2.0 -- -- -- -- 4.5 100 -100 50 A VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 320V, VGS=0V -- 0.20 VGS = 12V, ID = 15A On-State Resistance (SMD-2) -- 0.20 VGS = 12V, ID = 15A -- 1.4 V VGS = 0V, ID = 24A Diode Forward Voltage nA International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET MeV/(mg/cm2)) 28 36.8 Energy (MeV) 285 305 VDS (V) Range (m) @VGS= 0V @VGS= -5V @VGS= -10V @VGS= -15V @VGS= -20V 43 325 325 325 325 325 39 325 325 325 325 320 400 VDS 300 Cu 200 Br 100 0 0 -5 -10 -15 -20 -25 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNA7360SE 100 Pre-Irradiation 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 10 1 5.0V 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 10 5.0V 1 100 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C 10 1 V DS = 50V 20s PULSE WIDTH 7 8 9 10 11 12 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 10 100 Fig 2. Typical Output Characteristics 100 6 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 5 20us PULSE WIDTH TJ = 150 oC 0.1 0.1 VDS , Drain-to-Source Voltage (V) 0.1 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 23A ID = 24A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 8000 IRHNA7360SE 6000 Ciss 4000 Coss 2000 0 Crss 1 10 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 VDS , Drain-to-Source Voltage (V) 40 80 120 160 200 240 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C ID , Drain Current (A) ISD , Reverse Drain Current (A) VDS = 320V VDS = 200V VDS = 80V 16 0 100 ID = 24A 23A 10 100 1 10us 100us 10 TJ = 25 C V GS = 0 V 0.1 0.2 0.6 1.0 1.4 1.8 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 2.2 1 1ms TC = 25 C TJ = 150 C Single Pulse 1 10ms 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHNA7360SE Pre-Irradiation 25 VGS 20 ID , Drain Current (A) RD VDS D.U.T. RG 15 + -V DD VGS Pulse Width 1 s Duty Factor 0.1 % 10 Fig 10a. Switching Time Test Circuit VDS 5 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.01 t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNA7360SE 15V L VDS D.U.T. RG VGS 20V IAS DRIVER + - VDD 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) 600 ID 10.7A 15.2A BOTTOM 24A TOP 500 400 300 200 100 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12 V QGS .3F D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com 12V .2F IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHNA7360SE Pre-Irradiation Footnotes: A Repetitive Rating; Pulse width limited by maximum junction temperature. A VDD = 50V, starting TJ = 25C, L= 1.1mH Peak IL = 24A, VGS = 12V A ISD 24A, di/dt 120A/s, VDD 400V, TJ 150C A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. 12volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 320volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions --SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/2005 8 www.irf.com