Number: DB-058
Feb.2012 / H
Page 1
SEMICONDUCTOR
TAK CHEONG ®
500 mW LL-34 Hermetically
Sealed Glass Zener Voltage
Regulators
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Parameter Value Units
Power Dissipation 500 mW
Storage Temperature Range -65 to +175 °C
Operating Junction Temperature +175 °C
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Zener Voltage Range 2.0 to 75 Volts
LL-34 (Mini-MELF) Package
Surface Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Terminals Are Readily Solderable
RoHS Compliant
Matte Tin (Sn) Terminal Finish
Color band Indicates Negative Polarity
Electrical Characteristics TA = 25°C unless otherwise noted
VZ @ IZT
(Volts)
Device Type VZ
Min VZ
Max
IZT
(mA)
ZZT @ IZT
(Ω)
Max
IZK
(mA)
ZZK @ IZK
(Ω)
Max
IR @ VR
(µA)
Max
VR
(Volts)
TCBZV55C 2V0 1.88 2.11 5 100 1 600 50 1
TCBZV55C 2V2 2.08 2.33 5 100 1 600 50 1
TCBZV55C 2V4 2.28 2.56 5 85 1 600 50 1
TCBZV55C 2V7 2.51 2.89 5 85 1 600 10 1
TCBZV55C 3V0 2.8 3.2 5 85 1 600 4 1
TCBZV55C 3V3 3.1 3.5 5 85 1 600 2 1
TCBZV55C 3V6 3.4 3.8 5 85 1 600 2 1
TCBZV55C 3V9 3.7 4.1 5 85 1 600 2 1
TCBZV55C 4V3 4 4.6 5 75 1 600 1 1
TCBZV55C 4V7 4.4 5 5 60 1 600 0.5 1
TCBZV55C 5V1 4.8 5.4 5 35 1 550 0.1 1
TCBZV55C 5V6 5.2 6 5 25 1 450 0.1 1
TCBZV55C 6V2 5.8 6.6 5 10 1 200 0.1 2
TCBZV55C 6V8 6.4 7.2 5 8 1 150 0.1 3
TCBZV55C 7V5 7 7.9 5 7 1 50 0.1 5
TCBZV55C 8V2 7.7 8.7 5 7 1 50 0.1 6.2
TCBZV55C 9V1 8.5 9.6 5 10 1 50 0.1 6.8
TCBZV55C 10 9.4 10.6 5 15 1 70 0.1 7.5
TCBZV55C 11 10.4 11.6 5 20 1 70 0.1 8.2
TCBZV55C 12 11.4 12.7 5 20 1 90 0.1 9.1
TCBZV55C 13 12.4 14.1 5 26 1 110 0.1 10
Cathode Anode
ELECTRICAL SYMBOL
DEVICE MARKING DIAGRAM
Cathode Band Color : Blue
SURFACE MOUNT
LL34
TCBZV55C2V0 through TCBZV55C75
TCBZV55B2V0 through TCBZV55B75
Number: DB-058
Feb.2012 / H
Page 2
SEMICONDUCTOR
TAK CHEONG ®
Electrical Characteristics TA = 25°C unless otherwise noted
VZ @ IZT
(Volts)
Device Type Min Max
IZT
(mA)
ZZT @ IZT
(Ω)
Max
IZK
(mA)
ZZK @ IZK
(Ω)
Max
IR @ VR
(µA)
Max
VR
(Volts)
TCBZV55C 15 13.8 15.6 5 30 1 110 0.1 11
TCBZV55C 16 15.3 17.1 5 40 1 170 0.1 12
TCBZV55C 18 16.8 19.1 5 50 1 170 0.1 13
TCBZV55C 20 18.8 21.1 5 55 1 220 0.1 15
TCBZV55C 22 20.8 23.3 5 55 1 220 0.1 16
TCBZV55C 24 22.8 25.6 5 80 1 220 0.1 18
TCBZV55C 27 25.1 28.9 5 80 1 220 0.1 20
TCBZV55C 30 28 32 5 80 1 220 0.1 22
TCBZV55C 33 31 35 5 80 1 220 0.1 24
TCBZV55C 36 34 38 5 80 1 220 0.1 27
TCBZV55C 39 37 41 2.5 90 0.5 500 0.1 28
TCBZV55C 43 40 46 2.5 90 0.5 600 0.1 32
TCBZV55C 47 44 50 2.5 110 0.5 700 0.1 35
TCBZV55C 51 48 54 2.5 125 0.5 700 0.1 38
TCBZV55C 56 52 60 2.5 135 0.5 1000 0.1 42
TCBZV55C 62 58 66 2.5 150 0.5 1000 0.1 47
TCBZV55C 68 64 72 2.5 160 0.5 1000 0.1 51
TCBZV55C 75 70 80 2.5 170 0.5 1000 0.1 56
VF Forward Voltage = 1.0 V Maximum @ IF = 100 mA for all types
Electrical Characteristics TA = 25°C unless otherwise noted
VZ @ IZT
(Volts)
Device Type Min Max
IZT
(mA)
ZZT @ IZT
(Ω)
Max
IZK
(mA)
ZZK @ IZK
(Ω)
Max
IR @ VR
(µA)
Max
VR
(Volts)
TCBZV55B 2V4 2.35 2.45 5 85 1 600 50 1
TCBZV55B 2V7 2.65 2.75 5 85 1 600 10 1
TCBZV55B 3V0 2.94 3.06 5 85 1 600 4 1
TCBZV55B 3V3 3.23 3.37 5 85 1 600 2 1
TCBZV55B 3V6 3.53 3.67 5 85 1 600 2 1
TCBZV55B 3V9 3.82 3.98 5 85 1 600 2 1
TCBZV55B 4V3 4.21 4.39 5 75 1 600 1 1
TCBZV55B 4V7 4.61 4.79 5 60 1 600 0.5 1
TCBZV55B 5V1 5.00 5.20 5 35 1 550 0.1 1
TCBZV55B 5V6 5.49 5.71 5 25 1 450 0.1 1
TCBZV55B 6V2 6.08 6.32 5 10 1 200 0.1 2
TCBZV55B 6V8 6.66 6.94 5 8 1 150 0.1 3
TCBZV55B 7V5 7.33 7.63 5 7 1 50 0.1 5
TCBZV55B 8V2 8.04 8.36 5 7 1 50 0.1 6.2
TCBZV55B 9V1 8.92 9.28 5 10 1 50 0.1 6.8
TCBZV55B 10 9.80 10.20 5 15 1 70 0.1 7.5
TCBZV55B 11 10.78 11.22 5 20 1 70 0.1 8.2
TCBZV55B 12 11.76 12.24 5 20 1 90 0.1 9.1
TCBZV55B 13 12.74 13.26 5 26 1 110 0.1 10
TCBZV55B 15 14.70 15.30 5 30 1 110 0.1 11
TCBZV55B 16 15.68 16.32 5 40 1 170 0.1 12
TCBZV55B 18 17.64 18.36 5 50 1 170 0.1 13
TCBZV55B 20 19.60 20.40 5 55 1 220 0.1 15
TCBZV55B 22 21.56 22.44 5 55 1 220 0.1 16
TCBZV55B 24 23.52 24.48 5 80 1 220 0.1 18
TCBZV55B 27 26.46 27.54 5 80 1 220 0.1 20
TCBZV55B 30 29.40 30.60 5 80 1 220 0.1 22
TCBZV55B 33 32.34 33.66 5 80 1 220 0.1 24
TCBZV55B 36 35.28 36.72 5 80 1 220 0.1 27
TCBZV55B 39 38.22 39.78 2.5 90 0.5 500 0.1 28
TCBZV55B 43 42.14 43.86 2.5 90 0.5 600 0.1 32
Number: DB-058
Feb.2012 / H
Page 3
SEMICONDUCTOR
TAK CHEONG ®
Electrical Characteristics TA = 25°C unless otherwise noted
VZ @ IZT
(Volts)
Device Type Min Max
IZT
(mA)
ZZT @ IZT
(Ω)
Max
IZK
(mA)
ZZK @ IZK
(Ω)
Max
IR @ VR
(µA)
Max
VR
(Volts)
TCBZV55B 47 46.06 47.94 2.5 110 0.5 700 0.1 35
TCBZV55B 51 49.98 52.02 2.5 125 0.5 700 0.1 38
TCBZV55B 56 54.88 57.12 2.5 135 0.5 1000 0.1 42
TCBZV55B 62 60.76 63.24 2.5 150 0.5 1000 0.1 47
TCBZV55B 68 66.64 69.36 2.5 160 0.5 1000 0.1 51
TCBZV55B 75 73.50 76.50 2.5 170 0.5 1000 0.1 56
VF Forward Voltage = 1.0 V Maximum @ IF = 100 mA for all types
Notes:
1. The type numbers listed have zener voltage min/max limits as shown.
2. For detailed information on price, availability and delivery of nominal zener voltages between the voltages sho wn and tighter
voltage tolerances, contact your nearest Tak Cheong Electronics representative.
3. The z ener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to
10% of the dc zener current (IZT or IZK) is superimposed to IZT or IZK.
Number: DB-058
Feb.2012 / H
Page 4
SEMICONDUCTOR
TAK CHEONG ®
Typical Characteristics
0
100
200
300
400
500
600
0 40 80 120 160 200
Temperature [℃]
PD-Power Passipation [mW]
Ta = 25℃
0.1
1
10
100
1000
0 0.2 0.4 0.6 0.8 1 1.2
VF - Forward Voltage [mV]
Forward Current [mA]
PD = 500mW
Ta = 25℃
0
50
100
150
200
250
300
0246810
VZ - Reverse Voltage [V]
Reverse Current [mA]
PD = 500mW
Ta = 25℃
0.01
0.1
1
10
100
15 25 35 45 55 65 75
VZ - Reverse Voltage [V]
Reverse Current [mA]
f = 1MHz
Ta = 25℃
1
10
100
1000
0 2040 6080
VZ - Reverse Voltage [V]
Total Capacitance [pF]
VR = 0V
VR = 2V VR = 5 V VR = 20V
VR = 30V
Ta = 25℃
0.1
1
10
100
1000
110100
VZ - Reverse Voltage [V]
Differential Zener Impedance [Ω]
Iz=10mA
Iz=5mA
Iz=2mA
Iz=1mA
Figure 1. Power Dissipation vs Ambient Temperature
Valid provided leads at a distance of 0.8mm from case are kept at
ambient temperature
Figure 2. Total Capacitance
Figure 5. Reverse Current vs. Reverse Voltage Figure 6. Reverse Current vs. Reverse Voltage
Figure 3. Differential Impedance vs. Zener Voltage Figure 4. Forward Current vs. Forward Voltage
Number: DB-058
Feb.2012 / H
Page 5
SEMICONDUCTOR
TAK CHEONG ®
Package Outline
Package Case Outline
LL34
LL-34
Millimeters Inches
DIM
Min Max Min Max
A 3.30 3.60 0.130 0.142
B 1.40 1.50 0.055 0.059
C 0.35 0.50 0.014 0.020
Notes: 1. All dimensions are within DO213AC JEDEC standard.
2. LL-34 polarity denoted by cathode band.
B
C
A
