PN2222A / 2N2222A PN2222A / 2N2222A General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren fur universellen Einsatz NPN NPN Version 2005-11-17 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Mae [mm] 625 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. - Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) PN2222A / 2N2222A Collector-Emitter-volt. - Kollektor-Emitter-Spannung E open VCB0 75 V Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCE0 40 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEB0 6V Power dissipation - Verlustleistung Ptot 625 mW 1) Collector current - Kollektorstrom (dc) IC 600 mA Peak Collector current - Kollektor-Spitzenstrom (tp < 5 ms) ICM 800 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -65...+150C -65...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. ICB0 - - 10 nA VCEsat VCEsat - - - - 0.3 V 1V VBEsat VBEsat 0.6 V - - - 1.2 V 2V Collector-Base cutoff current - Kollektor-Basis-Reststrom VCB = 60 V Collector saturation voltage - Kollektor-Sattigungsspannung IC = 150 mA, IB = 15 mA 2) IC = 500 mA, IB = 50 mA 2) Base saturation-voltage - Basis-Sattigungsspannung IC = 150 mA, IB = 15 mA 2) IC = 500 mA, IB = 50 mA 2) 1 2 Valid if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 PN2222A / 2N2222A Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. hFE hFE hFE hFE hFE 35 50 75 100 40 - - - - - - - - 300 - fT 250 MHz - - CCB0 - - 8 pF CEB0 - - 30 pF DC current gain - Kollektor-Basis-Stromverhaltnis IC IC IC IC IC = = = = = 0.1 mA, VCE = 10 V 1 mA, VCE = 10 V 10 mA, VCE = 10 V 150 mA, VCE = 10 V 1) 500 mA, VCE = 10 V 1) Gain-Bandwidth Product - Transitfrequenz IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capaciance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC =ic = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft < 200 K/W 2) RthA Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren PN2907A / 2N2907A 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 2 2 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Valid if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG