REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R216-92. 92-06-22 Michael A. Frye B Updated drawing to current requirements. Editorial changes throughout. - gap 01-04-04 Raymond Monnin 07-02-28 Robert M. Heber Added "Memory" in the SMD title block. Also, boilerplate update and part of five year review. tcr C THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth S. Rice STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http://www.dscc.dla.mil CHECKED BY Charles Reusing APPROVED BY THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE Charles Reusing MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 4 SRAM (LOW POWER), MONOLITHIC SILICON DRAWING APPROVAL DATE 88-08-04 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-88545 SHEET 1 OF DSCC FORM 2233 APR 97 14 5962-E258-07 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-88545 01 L A Drawing number Device type (see 1.2.1) Case outline (see 1.2.2) Lead finish (see 1.2.3) 1.2.1 Device type(s). The device type(s) identify the circuit function as follows: Device type 01 02 03 04 Generic number 5C256L4 5C256L4 5C256L4 5C256L4 Circuit function Access time 64K X 4 low power CMOS SRAM 64K X 4 low power CMOS SRAM 64K X 4 low power CMOS SRAM 64K X 4 low power CMOS SRAM 35 ns 45 ns 55 ns 70 ns 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter L X Y Descriptive designator GDIP3-T24 or CDIP4-T24 CQCC3-N28 CDFP4-F28 Terminals Package style 24 28 28 Dual-in-line Rectangular leadless chip carrier Flat package 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Voltage on any input relative to VSS ................................................................................ Voltage applied to outputs .............................................................................................. Storage temperature range ............................................................................................ Maximum power dissipation (PD) ................................................................................... Lead temperature (soldering, 10 seconds) ..................................................................... Thermal resistance, junction-to-case (JC) ..................................................................... Junction temperature (TJ) .............................................................................................. -0.5 V dc to +7.0 V dc -0.5 V dc to +6.0 V dc -65C to +150C 1.0 W +260C See MIL-STD-1835 +150C 1/ 1.4 Recommended operating conditions. Supply voltage (VCC) ...................................................................................................... Supply voltage (VSS) ...................................................................................................... Input high voltage (VIH) .................................................................................................. Input low voltage (VIL) .................................................................................................... Case operating temperature range (TC) ......................................................................... 4.5 V dc to 5.5 V dc 0 V dc 2.2 V dc to VCC +0.5 V dc -0.5 V dc to +0.8 V dc 2/ -55C to +125C _______ 1/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 2/ VIL minimum = -3.0 V dc for pulse width less than 20 ns. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-88545 A REVISION LEVEL C SHEET 2 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 - Test Method Standard Microcircuits. Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 MIL-HDBK-780 - List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for nonJAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MILPRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A "Q" or "QML" certification mark in accordance with MILPRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-88545 A REVISION LEVEL C SHEET 3 3.2.4 Die overcoat. Polyimide and silicone coatings are allowable as an overcoat on the die for alpha particle protection only. Each coated microcircuit inspection lot (see inspection lot as defined in MIL-PRF-38535) shall be subjected to and pass the internal moisture content test at 5000 ppm (see method 1018 of MIL-STD-883). The frequency of the internal water vapor testing shall not be decreased unless approved by the preparing activity for class M. The TRB will ascertain the requirements as provided by MIL-PRF-38535 for clases Q and V. Samples may be pulled anytime after seal. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. 3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. 3.5.1 Certification/compliance mark. A compliance indicator "C" shall be marked on all non-JAN devices built in compliance to MIL-PRF-38535, appendix A. The compliance indicator "C" shall be replaced with a "Q" or "QML" certification mark in accordance with MIL-PRF-38535 to identify when the QML flow option is used. 3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply shall affirm that the manufacturer's product meets the requirements of MIL-PRF-38535, appendix A and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change. Notification of change to DSCC-VA shall be required for any change that affects this drawing. 3.9 Verification and review. DSCC, DSCC's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-88545 A REVISION LEVEL C SHEET 4 TABLE I. Electrical performance characteristics. Test Symbol Operating supply current 1/ ICC1 Standby power supply ICC2 current, TTL Group A subgroups unless otherwise specified tAVAV = tAVAV (minimum), Device type Limits Min Unit 1, 2, 3 All Max 100 1, 2, 3 All 25 mA CE (VCC -0.2 V), f = 0 MHz, VCC = 5.5 V, all other inputs 0.2 V or (VCC -0.2 V) VCC = 2.0 V 1, 2, 3 All 3 mA 1, 2, 3 All 900 A VCC = 5.5 V, VIN = 0 V to 5.5 V VCC = 5.5 V, VIN = 0 V to 5.5 V VIN 0.2 V or (VCC - 0.2 V), 1, 2, 3 All 10 A 1, 2, 3 All 10 A 1, 2, 3 All 2.0 V 1, 2, 3 All 2.4 V 1, 2, 3 All 0.4 V 4 All 10.0 pF 4 All 12.0 pF mA VCC = 5.5 V, CE = VIL, all other inputs at VIL CE VIH, all other inputs VIL or VIH, VCC = 5.5 V, f = 0 MHz 1/ Standby power supply Conditions -55C TC +125C VCC = 4.5 V to 5.5 V VSS = 0 V ICC3 current, CMOS 1/ Data retention current 1/ ICC4 Input leakage current, any input Off-state output leakage current Data retention voltage IILK VDR Output high voltage VOH Output low voltage VOL Input capacitance CIN Output capacitance COUT IOLK CE (VCC - 0.2 V) IOUT = -4.0 mA, VCC = 4.5 V, VIL = 0.8 V, VIH = 2.2 V IOUT = 8.0 mA, VCC = 4.5 V, VIL = 0.8 V, VIH = 2.2 V VIN = 0 V f = 1.0 MHz, TC = +25C, See 4.3.1c VIN = 0 V f = 1.0 MHz, TC = +25C, See 4.3.1c See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-88545 A REVISION LEVEL C SHEET 5 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 2/ -55C TC +125C VCC = 4.5 V to 5.5 V VSS = 0 V Group A subgroups Device type 9, 10, 11 01 02 03 04 01 02 03 04 01 02 03 04 All Chip enable access time tELQV unless otherwise specified See figure 4 9, 10, 11 Read cycle time tAVAV See figure 4 3/ 9, 10, 11 Address access time tAVQV See figure 4 4/ 9, 10, 11 Output hold after address change Chip enable to output active Chip disable to output inactive tAVQX See figure 4 tELQX See figure 4 5/, 6/ 9, 10, 11 All tEHQZ See figure 4 5/, 6/ 9, 10, 11 Chip enable to power up tELPU See figure 4 5/ 9, 10, 11 01, 02 03 04 All Chip enable to power down tEHPD See figure 4 5/ 9, 10, 11 Write cycle time tAVAV See figure 5 9, 10, 11 Write pulse width tWLWH See figure 5 9, 10, 11 Chip enable to end of write tELEH See figure 5 9, 10, 11 Data setup to end of write Data hold after end of write tDVWH See figure 5 9, 10, 11 tWHDX See figure 5 9, 10, 11 Limits Min 01 02 03 04 01 02 03 04 01 02 03 04 01 02 03 04 01, 02 03, 04 All Unit Max 35 45 55 70 ns 35 45 55 70 ns 35 45 55 70 ns 3.0 ns 3.0 ns 0 0 0 0 20 25 30 ns ns 35 45 55 70 ns 35 45 55 70 30 40 50 55 30 40 50 55 20 25 0 ns ns ns ns ns See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-88545 A REVISION LEVEL C SHEET 6 TABLE I. Electrical performance characteristics - Continued. Test Symbol Address setup to end of write tAVWH Address setup to beginning of write tAVWL Conditions 2/ -55C TC +125C VCC = 4.5 V to 5.5 V VSS = 0 V unless otherwise specified See figure 5 Group A subgroups Device type 9, 10, 11 Min 30 40 50 55 0 Unit Max 9, 10, 11 01 02 03 04 All 9, 10, 11 All 0 ns 9, 10, 11 All 5.0 ns Address hold after end of write Write enable to output disable tWHAV See figure 5 (write cycle number 1) See figure 5 (write cycle number 2) See figure 5 tWLQZ See figure 5 5/, 6/ 9, 10, 11 Output active after end of write Deselect time tWHQX See figure 5 5/, 6/, 7/ 9, 10, 11 01, 02 03 04 All tEHVCCL See figure 6 5/, 8/ 9, 10, 11 All Recovery time tVCCHEL See figure 6 5/, 8/ 9, 10, 11 All tAVEL Limits 0 0 0 0 ns ns 20 25 30 ns ns tAVAV (min) tAVAV (min) ns ns 1/ ICC is dependent upon output loading and cycle rate. The specified values apply with output(s) unloaded. 2/ AC measurements assume signal transition times of 5 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 V to 3.0 V and output loading of 30 pF load capacitance. Output timing reference is 1.5 V, see figure 3. 3/ For read cycles 1 and 2, WE is high for entire cycle. 4/ Device is continuously selected, CE low. 5/ Parameter if not tested, shall be guaranteed to the limits specified in table I. 6/ Measured 500 mV from steady state output voltage. Load capacitance is 5.0 pF, see figure 3. 7/ If WE is low when CE goes low, the output remains in the high impedance state. 8/ Supply recovery rate should not exceed 10 s per volt from VDR to VCC minimum. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-88545 A REVISION LEVEL C SHEET 7 Device type Case outline Terminal number 1 2 3 4 5 6 7 8 9 10 11 L A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 CE All X Terminal Symbol NC A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 Y NC A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 12 VSS CE 13 WE I/O4 I/O3 NC NC 14 15 VSS NC VSS 16 I/O2 17 18 19 20 21 22 23 24 25 26 27 28 I/O1 A0 A1 A2 A3 A4 A5 VCC --------- CE WE I/O1 WE I/O4 I/O3 I/O2 I/O1 A0 A1 A2 A3 A4 A5 NC VCC I/O2 I/O3 I/O4 NC NC A10 A11 A12 A13 A14 A15 VCC FIGURE 1. Terminal connections. CE WE H L L X L H Mode Not selected Write Read I/O Power High Z DIN DOUT Standby Active Active H = Logic "1" state L = Logic "0" state X = Don't care FIGURE 2. Truth table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-88545 A REVISION LEVEL C SHEET 8 AC test conditions Input pulse levels GND to 3.0 V Input rise fall times 5 ns Input timing reference levels 1.5 V Output reference levels 1.5 V FIGURE 3. Output load circuit. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-88545 A REVISION LEVEL C SHEET 9 NOTES: 1. WE is high for entire cycle. 2. CE and WE must transition between VIH (min) to VIL (max) or VIL (max) to VIH (min) in a monotonic fashion. 3. Device is continuously selected, CE low. FIGURE 4. Read cycle timing diagrams. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-88545 A REVISION LEVEL C SHEET 10 FIGURE 5. Write cycle timing diagrams. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-88545 A REVISION LEVEL C SHEET 11 NOTES: 1. CE and WE must transition between VIH (min) to VIL (max) or VIL (max) to VIH (min) in a monotonic fashion. 2. CE and WE must be VIH during address transitions. FIGURE 5. Write cycle timing diagrams - Continued. FIGURE 6. Low VCC data retention cycle. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-88545 A REVISION LEVEL C SHEET 12 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. The following additional criteria shall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA = +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of the manufacturer. TABLE II. Electrical test requirements. MIL-STD-883 test requirements Interim electrical parameters (method 5004) Final electrical test parameters (method 5004) Group A test requirements (method 5005) Groups C and D end-point electrical parameters (method 5005) Subgroups (in accordance with MIL-STD-883, method 5005, table I) --1*, 2, 3, 7*, 8A, 8B, 9, 10, 11 1, 2, 3, 4**, 7, 8A, 8B, 9, 10, 11 2, 3, 7, 8A, 8B * PDA applies to subgroups 1 and 7. ** See 4.3.1c. 4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with method 5005 of MIL-STD883 including groups A, B, C, and D inspections. The following additional criteria shall apply. 4.3.1 Group A inspection. a. Tests shall be as specified in table II herein. b. Subgroups 5 and 6 in table I, method 5005 of MIL-STD-883 shall be omitted. c. Subgroup 4 (CIN/COUT measurement) shall be measured only for the initial test and after process or design changes which may affect input or output capacitance. d. Subgroups 7 and 8 shall include verification of the truth table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-88545 A REVISION LEVEL C SHEET 13 4.3.2 Groups C and D inspections. a. End-point electrical parameters shall be as specified in table II herein. b. Steady-state life test conditions, method 1005 of MIL-STD-883. (1) Test condition C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. (2) TA = +125C, minimum. (3) Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535, appendix A. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.2 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractorprepared specification or drawing. 6.3 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal. 6.4 Record of users. Military and industrial users shall inform Defense Supply Center Columbus (DSCC) when a system application requires configuration control and the applicable SMD. DSCC will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronics devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544. 6.5 Comments. Comments on this drawing should be directed to DSCC-VA, Columbus, Ohio 43218-3990, or telephone (614) 692-0547. 6.6 Approved sources of supply. Approved sources of supply are listed in MIL-HDBK-103. The vendors listed in MILHDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by DSCC-VA. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-88545 A REVISION LEVEL C SHEET 14 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 07-02-28 Approved sources of supply for SMD 5962-88545 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DSCC-VA. This information bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DSCC maintains an online database of all current sources of supply at http://www.dscc.dla.mil/Programs/Smcr/. Standard microcircuit drawing PIN 1/ 5962-8854501LA 5962-8854501XA 5962-8854501YA 5962-8854502LA 5962-8854502XA 5962-8854502YA Vendor CAGE number 0EU86 0C7V7 3DTT2 3/ 3/ 3/ 0EU86 0C7V7 3DTT2 3/ 3/ 0EU86 0C7V7 3DTT2 3/ 0EU86 0C7V7 3DTT2 3/ 3/ 3/ 0EU86 0C7V7 3DTT2 3/ 3/ 0EU86 0C7V7 3DTT2 3/ Vendor similar PIN 2/ MT5C2564C-35L/883C CY7C194L-35DMB P4C1258L-35CMB OW6208CD3-35 IDT71258L35CB EDI8465LP35QB MT5C2564EC-35L/883C CY7C194L-35LMB P4C1258L-35LMB OW6208CC3-35 EDI8464LP35LB MT5C2564F-35L/883C CY7C194L-35KMB P4C1258L-35FSMB EDI8465LP35FB MT5C2564C-45L/883C CY7C194L-45DMB P4C1258L-45CMB OW6208CD3-45 IDT71258L45CB EDI8465LP45QB MT5C2564EC-45L/883C CY7C194L-45LMB P4C1258L-45LMB OW6208CC3-45 EDI8464LP45LB MT5C2564F-45L/883C CY7C194L-45KMB P4C1258L-45FSMB EDI8465LP45FB The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin. Page 1 of 2 STANDARD MICROCIRCUIT DRAWING BULLETIN - Continued. Vendor Vendor Standard similar CAGE microcircuit drawing PIN 2/ number PIN 1/ 5962-8854503LA 0EU86 MT5C2564C-55L/883C 0C7V7 CY7C194L-55DMB 3DTT2 P4C1258L-55CMB 3/ OW6208CD3-55 3/ IDT71258L55CB 3/ EDI8465LP55QB 5962-8854503XA 0EU86 MT5C2564EC-55L/883C 0C7V7 CY7C194L-55LMB 3DTT2 P4C1258L-55LMB 3/ OW6208CC3-55 3/ EDI8464LP55LB 5962-8854503YA 0EU86 MT5C2564F-55L/883C 0C7V7 CY7C194L-55KMB 3DTT2 P4C1258L-55FSMB 3/ EDI8465LP55FB 5962-8854504LA 0EU86 MT5C2564C-70L/883C 0C7V7 CY7C194L-70DMB 3DTT2 P4C1258L-70CMB 3/ OW6208CD3-70 3/ IDT71258L70CB 3/ EDI8465LP70QB 5962-8854504XA 0EU86 MT5C2564EC-70L/883C 0C7V7 CY7C194L-70LMB 3DTT2 P4C1258L-70LMB 3/ OW6208CC3-70 3/ EDI8464LP70LB 5962-8854504YA 0EU86 MT5C2564F-70L/883C 0C7V7 CY7C194L-70KMB 3DTT2 P4C1258L-70FSMB 3/ EDI8465LP70FB 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to determine its availability. 2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. 3/ Not available from an approved source of supply. Vendor CAGE number Vendor name and address 0EU86 Austin Semiconductor International L.P. 8701 Cross Park Drive Austin, TX 78754-4566 0C7V7 QP Semiconductor 2945 Oakmead Village Ct. Santa Clara, CA 95051-0812 3DTT2 Pyramid Semiconductor Corp 1340 Bordeaux Drive Sunnyvale, Ca 94089-1005 Page 2 of 2