NSG2607 G B FNEW ENGLAND SEMICONDUCTOR POWER RECTIFIERS SCHOTTKY BARRIER Schottky Diode - Center Tap RECTIFIERS e Low Forward Voltage 20 AMPERES e Matched Dual Die Construction e = Epitaxial Construction * 150C Operating Temperature TO-254AA ol Gs MAXIMUM RATINGS (PER LEG) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Varm 100 Volts Working Peak Reverse Voltage Vrwn 100 DC Blocking Voltage Ve Average Rectified Forward Current (Rated V,) Tc. = 110C Rav) 20 Amps Peak Repetitive Forward Current, Per Leg Ippm Amps (Rated V,, Square Wave, 20 kHz) T, =95'C Nonrepetitive Peak Surge Current lesm 200 Amps (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Operating Junction Temperature T, -55 to +150 "C Storage Temperature Tyg -55 to +150 C THERMAL CHARACTERISTICS | Thermal Resistance -- Junction to Case | Ryc 1.3 | *C/iw ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (1) YF Volts (lp=S Amps, T,=25C) 0.80 (ly = 10 Amps, T, = 25C) 0.88 Maximum Instantaneous Reverse Current (1) 'R (Vp =80V, T,=25C) 35 pA (V_ = 80V, T;= 125C) 10 mA Capacitance/Diode (Vp=S5Vde TA=25C) Cy 800 Pf (100 khz < fs 1 MHz (1) Pulse Test: Pulse Width = 300 Ls, Duty Cycle < 2.0% 6 Lake Street Lawrence,MA 01841 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8-806-1301 REV:-- NEW ENGLAND SEMICONDUCTOR