1
IPD65R660CFDA
Rev.2.2,2016-04-18Final Data Sheet
tab
1
2
3
DPAK
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
MOSFET
650VCoolMOSªCFDAPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseries
combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh
classinnovation.Theresultingdevicesprovideallbenefitsofafast
switchingSJMOSFETwhileofferinganextremelyfastandrobustbody
diode.Thiscombinationofextremelylowswitching,commutationand
conductionlossestogetherwithhighestrobustnessmakeespecially
resonantswitchingapplicationsmorereliable,moreefficient,lighter,and
cooler.
Features
•Ultra-fastbodydiode
•Veryhighcommutationruggedness
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Easytouse/drive
•QualifiedaccordingtoAECQ101
•Greenpackage(RoHScompliant),Pb-freeplating,halogenfreeformold
compound
Applications
650VCoolMOS™CFDAisdesignedforswitchingapplications.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS 650 V
RDS(on),max 0.66 Ω
Qg,typ 20 nC
ID,pulse 17 A
Eoss @ 400V 1.8 µJ
Body diode di/dt 900 A/µs
Qrr 0.2 µC
trr 65 ns
Irrm 4.5 A
Type/OrderingCode Package Marking RelatedLinks
IPD65R660CFDA PG-TO 252 65F660A -
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650VCoolMOSªCFDAPowerTransistor
IPD65R660CFDA
Rev.2.2,2016-04-18Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3
650VCoolMOSªCFDAPowerTransistor
IPD65R660CFDA
Rev.2.2,2016-04-18Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID6 A TC=25°C
3.8 TC=100°C
Pulsed drain current2) ID‚pulse 17 A TC=25°C
Avalanche energy, single pulse EAS 115 mJ ID=1.2A,VDD=50V
(see table 10)
Avalanche energy, repetitive EAR 0.21 mJ ID=1.2A,VDD=50V
Avalanche current, repetitive IAR 1.2 A
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...400V
Gate source voltage VGS -20 20 V static
-30 30 AC (f > 1 Hz)
Power dissipation (SMD)
DPAK Ptot 62.5 W TC=25°C
Operating and storage temperature Tj‚Tstg -40 150 °C
Continuous diode forward current IS6 A TC=25°C
Diode pulse current IS‚pulse 17 A TC=25°C
Reverse diode dv/dt3) dv/dt 50 V/ns VDS=0...400V,ISD≤ID,
Tj=25°C
(see table 8)
Maximum diode commutation speed dif/dt 900 A/µs
1) Limited by Tj max.
2) Pulse width tp limited by Tj max
3) Identical low side and high side switch with identical RG
4
650VCoolMOSªCFDAPowerTransistor
IPD65R660CFDA
Rev.2.2,2016-04-18Final Data Sheet
2Thermalcharacteristics
Table3ThermalcharacteristicsDPAK
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC 2 K/W
Thermal resistance, junction - ambient1) RthJA 62 K/W SMD version, device on PCB,
minimal footprint
35 SMD version, device on PCB, 6cm²
cooling area
Soldering temperature, wave- &
reflowsoldering allowed Tsold 260 °C reflow MSL
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB
is vertical without air stream cooling.
5
650VCoolMOSªCFDAPowerTransistor
IPD65R660CFDA
Rev.2.2,2016-04-18Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage1) V(BR)DSS 650 V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 3.5 4 4.5 V VDS=VGS,ID=0.2mA
Zero gate voltage drain current IDSS 1 µA VDS=650V,VGS=0V,Tj=25°C
100 VDS=650V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) 0.594 0.66 ΩVGS=10V,ID=3.2A,Tj=25°C
1.54 VGS=10V,ID=3.2A,Tj=150°C
Gate resistance RG6.5 Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss 543 pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss 32 pF
Effective output capacitance, energy
related2) Co(er) 24 pF VGS=0V,VDS=0...400V
Effective output capacitance, time
related3) Co(tr) 97 pF ID=constant,VGS=0V,
VDS=0...400V
Turn-on delay time td(on) 9 ns VDD=400V,VGS=13V,ID=3.2A,
RG=6.8Ω
(see table 9)
Rise time tr8 ns
Turn-off delay time td(off) 40 ns
Fall time tf10 ns
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs 3.5 nC VDD=480V,ID=3.2A,
VGS=0to10V
Gate to drain charge Qgd 11 nC
Gate charge total Qg20 nC
Gate plateau voltage Vplateau 6.4 V
1) For applications with applied blocking voltage > 65% of the specified blocking voltage, we recommend to evaluate
the impact of the cosmic radiation effect in early design phase. For assessment please contact local Infineon sales
office.
2) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V
3) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400V
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650VCoolMOSªCFDAPowerTransistor
IPD65R660CFDA
Rev.2.2,2016-04-18Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD 0.9 V VGS=0V,IF=3.2A,Tj=25°C
Reverse recovery time trr 65 ns VR=400V,IF=3.2A,
diF/dt=100A/µs
(see table 8)
Reverse recovery charge Qrr 0.2 µC
Peak reverse recovery current Irrm 4.5 A
7
650VCoolMOSªCFDAPowerTransistor
IPD65R660CFDA
Rev.2.2,2016-04-18Final Data Sheet
4Electricalcharacteristicsdiagrams
Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
2
4
6
8
10
12
14
16
18
20
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
2
4
6
8
10
12
14
16
18
20
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
0246810
1.0
1.5
2.0
2.5
3.0
5 V 5.5 V
6 V 6.5 V
7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
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650VCoolMOSªCFDAPowerTransistor
IPD65R660CFDA
Rev.2.2,2016-04-18Final Data Sheet
Powerdissipation
TC[°C]
Ptot[W]
0 50 100 150
0
10
20
30
40
50
60
70
80
Ptot=f(TC)
Diagram18:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
ID=f(VDS);TC=25°C;D=0;forVgs>7.5V;parameter:tp
Diagram7:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
ID=f(VDS);TC=80°C;D=0;forVgs>7.5V;parameter:D=tp/T
Typ.drain-sourceon-stateresistance
Tj[°C]
RDS(on)[mΩ]
-60 -20 20 60 100 140 180
0.0
0.5
1.0
1.5
2.0
typ
RDS(on)=f(Tj);ID=3.2A;VGS=10V
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650VCoolMOSªCFDAPowerTransistor
IPD65R660CFDA
Rev.2.2,2016-04-18Final Data Sheet
Typ.transfercharacteristics
VGS[V]
ID[A]
0246810
0
2
4
6
8
10
12
14
16
18
150 °C
25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Typ.forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5 2.0 2.5
10-1
100
101
102
125 °C
25 °C
IF=f(VSD);parameter:Tj
Typ.gatecharge
Qgate[nC]
VGS[V]
0 5 10 15 20 25
0
1
2
3
4
5
6
7
8
9
10
120 V
480 V
VGS=f(Qgate);ID=19.2Apulsed;parameter:VDD
Avalancheenergy
Tj[°C]
EAS[mJ]
25 50 75 100 125 150
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
EAS=f(Tj);ID=6.6A;VDD=50V
10
650VCoolMOSªCFDAPowerTransistor
IPD65R660CFDA
Rev.2.2,2016-04-18Final Data Sheet
Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-40 0 40 80 120 160
540
560
580
600
620
640
660
680
700
720
740
760
VBR(DSS)=f(Tj);ID=0.25mA
Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400 500 600
100
101
102
103
104
105
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400 500 600
0
1
2
3
4
Eoss=f(VDS)
11
650VCoolMOSªCFDAPowerTransistor
IPD65R660CFDA
Rev.2.2,2016-04-18Final Data Sheet
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
t
V ,I
Irrm
IF
VDS
10 %Irrm
trr
tFtS
Q
FQ
S
dIF/ dt
dIrr / dt
VDS(peak)
Q
rr = QF+ Q
S
trr =tF+tS
VDS
IF
VDS
IF
Rg1
Rg2
Rg1 = Rg2
Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
ID
VDS
VDS
ID
12
650VCoolMOSªCFDAPowerTransistor
IPD65R660CFDA
Rev.2.2,2016-04-18Final Data Sheet
6PackageOutlines
Figure1OutlinePG-TO252,dimensionsinmm/inches
13
650VCoolMOSªCFDAPowerTransistor
IPD65R660CFDA
Rev.2.2,2016-04-18Final Data Sheet
RevisionHistory
IPD65R660CFDA
Revision:2016-04-18,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2012-07-12 Preliminary
2.1 2014-11-19 Correction of Marking Code
2.2 2016-04-18 Updated: SOA diagrams, Idss at 150C, Rdson vs. Tj.
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
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©2016InfineonTechnologiesAG
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TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirementscomponentsmaycontaindangeroussubstances.Forinformationonthetypesinquestionplease
contactyournearestInfineonTechnologiesOffice.
InfineonTechnologiesComponentsmayonlybeusedinlife-supportdevicesorsystemswiththeexpresswrittenapprovalof
InfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support
deviceorsystem,ortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintended
tobeimplantedinthehumanbody,ortosupportand/ormaintainandsustainand/orprotecthumanlife.
Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.