DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 04 2000 May 23 NXP Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor FEATURES MARKING High power gain TYPE NUMBER Low noise figure BFG540W N9 High transition frequency BFG540W/X N7 Gold metallization ensures excellent reliability. BFG540W/XR N8 CODE lfpage 4 3 1 2 PINNING APPLICATIONS Top view RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. DESCRIPTION NPN silicon planar epitaxial transistors in 4-pin dual-emitter SOT343N and SOT343R plastic packages. PIN MBK523 DESCRIPTION BFG540W (see Fig.1) 1 collector 2 base 3 emitter 4 emitter Fig.1 SOT343N. BFG540W/X (see Fig.1) 1 collector 2 emitter 3 base 4 emitter 3 halfpage 4 2 BFG540W/XR (see Fig.2) 1 collector 2 emitter 3 base 4 emitter 1 Top view MSB842 Fig.2 SOT343R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 20 V 15 V VCBO collector-base voltage VCES collector-emitter voltage RBE = 0 IC collector current (DC) 120 mA Ptot total power dissipation Ts 85 C 500 mW hFE DC current gain IC = 40 mA; VCE = 8 V 100 120 250 Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz 0.5 fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C 9 GHz GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C 16 dB IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C 10 dB insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C 14 15 dB noise figure s opt; IC = 10 mA; VCE = 8 V; f = 2 GHz 2.1 dB |s21 F |2 2000 May 23 open emitter 2 pF NXP Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCES collector-emitter voltage RBE = 0 15 V VEBO emitter-base voltage open collector 2.5 V IC collector current (DC) 120 mA Ptot total power dissipation 500 mW Tstg storage temperature 65 +150 C Tj junction temperature 175 C Ts 85 C; see Fig.3; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Ts 85 C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. MBG248 600 handbook, halfpage P tot (mW) 400 200 0 0 50 100 150 200 T s (o C) VCE 10 V. Fig.3 Power derating curve. 2000 May 23 3 VALUE UNIT 180 K/W NXP Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 10 A ; IE = 0 20 V V(BR)CES collector-emitter breakdown voltage RBE = 0; IC = 40 A 15 V V(BR)EBO emitter-base breakdown voltage open collector; IE = 100 A; IC = 0 2.5 V nA ICBO collector cut-off current open emitter; VCB = 8 V; IE = 0 50 hFE DC current gain IC = 40 mA; VCE = 8 V 100 120 250 fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C 9 Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz 0.9 pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 2 pF Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz 0.5 pF GUM maximum unilateral power gain; note 1 IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C 16 dB 10 dB IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C GHz |s21|2 insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; 14 Tamb = 25 C 15 dB F noise figure s opt; IC = 10 mA; VCE = 8 V; f = 900 MHz 1.3 1.8 dB s opt; IC = 40 mA; VCE = 8 V; f = 900 MHz 1.9 2.4 dB s opt; IC = 10 mA; VCE = 8 V; f = 2 GHz 2.1 dB PL1 output power at 1 dB gain compression IC = 40 mA; VCE = 8 V; f = 900 MHz; RL = 50 ; Tamb = 25 C 21 dBm ITO third order intercept point note 2 34 dBm Vo output voltage note 3 500 mV d2 second order intermodulation distortion note 4 50 dB Notes s 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------- 1 - s 11 2 1 - s 22 2 2. IC = 40 mA; VCE = 8 V; RL = 50 ; Tamb = 25 C; a) fp = 900 MHz; fq = 902 MHz; measured at f(2p q) = 898 MHz and f(2q p) = 904 MHz. 3. dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo 6 dB; Vr = Vo 6 dB; RL = 75 ; VCE = 8 V; IC = 40 mA; a) fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p + q r) = 793.25 MHz. 4. IC = 40 mA; VCE = 8 V; Vo = 275 mV; RL = 75 ; Tamb = 25 C; a) fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz. 2000 May 23 4 NXP Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor MRA749 250 hFE Cre (pF) 200 0.8 150 0.6 100 0.4 50 0.2 0 10-2 MRA750 1 handbook, halfpage handbook, halfpage 10-1 1 10 IC (mA) 0 102 0 4 VCE = 8 V. IC = 0; f = 1 MHz. Fig.4 Fig.5 DC current gain as a function of collector current; typical values. MLC044 12 handbook, halfpage fT (GHz) VCE = 8 V 8 VCE = 4 V 4 0 10 1 1 10 2 I C (mA) 10 f = 1 GHz; Tamb = 25 C. Fig.6 Transition frequency as a function of collector current; typical values. 2000 May 23 5 8 VCB (V) 12 Feedback capacitance as a function of collector-base voltage; typical values. NXP Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor MLC045 30 MLC046 30 handbook, halfpage handbook, halfpage gain gain (dB) (dB) 20 20 MSG G max G UM 10 G max G UM 10 0 0 0 10 20 50 40 I C (mA) 30 0 10 f = 900 MHz; VCE = 8 V. f = 2 GHz; VCE = 8 V. Fig.7 Fig.8 Gain as a function of collector current; typical values. MLC047 50 50 40 I C (mA) 30 Gain as a function of collector current; typical values. MLC048 50 handbook, halfpage handbook, halfpage gain (dB) 20 gain (dB) G UM 40 40 G UM MSG MSG 30 30 20 20 10 10 G max 0 G max 0 10 102 103 f (MHz) 104 10 102 103 f (MHz) 104 IC = 10 mA; VCE = 8 V. IC = 40 mA; VCE = 8 V. Fig.9 Fig.10 Gain as a function of frequency; typical values. Gain as a function of frequency; typical values. 2000 May 23 6 NXP Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor MEA973 -20 dim MEA972 -20 d2 handbook, halfpage handbook, halfpage (dB) -30 (dB) -30 -40 -40 -50 -50 -60 -60 -70 10 20 30 40 50 -70 10 60 IC (mA) 20 30 40 50 60 IC (mA) Vo = 275 mV; f(p + q) = 810 MHz; VCE = 8 V; Tamb = 25 C; RL = 75 . Vo = 500 mV; f(p + q r) = 793.25 MHz; VCE = 8 V; Tamb = 25 C; RL = 75 . Fig.12 Second order intermodulation distortion as a function of collector current; typical values. Fig.11 Intermodulation distortion as a function of collector current; typical values. MLC049 4 MRA760 5 handbook, halfpage handbook, halfpage Fmin F (dB) f = 900 MHz (dB) 4 1000 MHz 3 f = 2000 MHz Gass 3 2000 MHz 20 Gass (dB) 15 10 2 2000 MHz 1000 MHz 900 MHz 500 MHz 1 5 2 1000 MHz 900 MHz 500 MHz 1 0 1 10 I C (mA) Fmin 0 0 102 1 10 IC (mA) -5 102 VCE = 8 V. VCE = 8 V. Fig.13 Minimum noise figure as a function of collector current; typical values. Fig.14 Associated available gain as a function of collector current; typical values. 2000 May 23 7 NXP Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor MLC050 4 MRA761 5 handbook, halfpage handbook, halfpage Fmin F (dB) IC = 10 mA (dB) 4 I C = 40 mA 40 mA 20 Gass (dB) 15 Gass 3 10 mA 3 10 2 5 2 40 mA 1 1 0 10 2 10 3 f (MHz) 0 102 10 4 VCE = 8 V. Fmin 0 103 f (MHz) -5 104 VCE = 8 V. Fig.15 Minimum noise figure as a function of frequency; typical values. 2000 May 23 10 mA Fig.16 Associated available gain as a function of frequency; typical values. 8 NXP Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor handbook, full pagewidth 90 o stability circle 1.0 1 135 o 45 o 2 0.5 0.8 0.6 unstable region 0.2 0.4 5 F min = 1.3 dB opt 180 o 0.2 0 0.5 1 0.2 2 5 0o 0 F = 1.5 dB F = 2 dB 0.2 5 F = 3 dB 0.5 2 135 o 45 o 1 MLC051 1.0 90 o f = 900 MHz; VCE = 8 V; IC = 10 mA; Zo = 50 Fig.17 Common emitter noise figure circles; typical values. 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 opt 1 2 5 0o F min = 2.1 dB 0 G max = 9.8 dB G = 9 dB G = 8 dB 0.2 5 F = 1.5 dB F = 3 dB F = 4 dB 0.5 2 135 o 45 o 1 MLC052 90 o f = 2 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 Fig.18 Common emitter noise figure circles; typical values. 2000 May 23 9 1.0 NXP Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 3 GHz 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 0.2 5 40 MHz 0.5 2 135 o 0o 0 5 45 o 1 MLC053 1.0 90 o VCE = 8 V; IC = 40 mA; Zo = 50 . Fig.19 Common emitter input reflection coefficient (s11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 3 GHz 50 40 135 30 20 0o 10 o 45 90 o o MLC054 VCE = 8 V; IC = 40 mA. Fig.20 Common emitter forward transmission coefficient (s21); typical values. 2000 May 23 10 NXP Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor 90 o handbook, full pagewidth 3 GHz 135 o 180 o 0.25 45 o 40 MHz 0.20 0.15 0.10 0o 0.05 135 o 45 o 90 o MLC055 VCE = 8 V; IC = 40 mA. Fig.21 Common emitter reverse transmission coefficient (s12); typical values. 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 3 GHz 40 MHz 0.2 0.5 2 135 o 5 45 o 1 MLC056 1.0 90 o VCE = 8 V; IC = 40 mAZo = 50 Fig.22 Common emitter output reflection coefficient (s22); typical values. 2000 May 23 11 NXP Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor SPICE parameters for the BFG540W crystal SEQUENCE No. PARAMETER VALUE UNIT SEQUENCE No. 1 IS 1.045 fA 36 (1) 2 BF 184.3 37 (1) 3 NF 0.981 38 PARAMETER VALUE UNIT VJS 750.0 MJS 0.000 FC 0.814 mV 4 VAF 41.69 V Note 5 IKF 10.00 A 6 ISE 232.4 fA 1. These parameters have not been extracted, the default values are shown. 7 NE 2.028 8 BR 43.99 9 NR 0.992 10 VAR 2.097 V 11 IKR 166.2 mA 12 ISC 129.8 aA 13 NC 1.064 14 RB 5.000 15 IRB 1.000 A 16 RBM 5.000 17 RE 353.5 m RC 1.340 XTB 0.000 18 19 (1) C cb handbook, halfpage L1 B LB L2 B' C be C' C E' Cce LE MBC964 L3 E 20 (1) EG 1.110 eV 21 (1) XTI 3.000 22 CJE 1.978 pF 23 VJE 600.0 mV 24 MJE 0.332 25 TF 7.457 ps 26 XTF 11.40 27 VTF 3.158 V 28 ITF 156.9 mA Cbe 70 fF 29 PTF 0.000 deg Ccb 50 fF 115 fF QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc) fc = scaling frequency = 1 GHz. Fig.23 Package equivalent circuit SOT343N; SOT343R. List of components (see Fig.23). DESIGNATION VALUE UNIT 30 CJC 793.7 fF Cce 31 VJC 185.5 mV L1 0.34 nH 32 MJC 0.084 L2 0.10 nH XCJC 0.150 L3 0.25 nH TR 1.598 ns LB 0.40 nH CJS 0.000 F LE 0.40 nH 33 34 35 (1) 2000 May 23 12 NXP Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor PACKAGE OUTLINES Plastic surface-mounted package; 4 leads SOT343N D E B A X HE y v M A e 4 3 Q A A1 c 1 2 b1 bp w M B Lp e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-05-21 06-03-16 SOT343N 2000 May 23 EUROPEAN PROJECTION 13 NXP Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Plastic surface-mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-05-21 06-03-16 SOT343R 2000 May 23 EUROPEAN PROJECTION 14 NXP Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 2000 May 23 15 NXP Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 2000 May 23 16 NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/04/pp17 Date of release: 2000 May 23