2N6284 (NPN)
Silicon Complementary Darlington Transistors
Power Amplifier
Description:
The 2N6284 (NPN) is a silicon complementary Darlington transistor in a TO3 type case designed for
general−purpose amplifier and low−frequency switching applications.
Features:
DHigh DC Current Gain @ IC = 10A:
hFE = 2400 Typ
DCollector−Emitter Sustaining Voltage: VCEO(sus) = 100V Min
DMonolithic Construction with Built−In Base−Emitter Shunt Resistors
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Emitter Voltage, VCEO 100V.....................................................
Collector−Base Voltage, VCB 100V........................................................
Emitter−Base Voltage, VEB 5V...........................................................
Collector Current, IC
Continuous 20A..................................................................
Peak 40A.......................................................................
Base Current, IB0.5mA.................................................................
Total Power Dissipation (TC = +25°C), PD160W...........................................
Derate Above 25°C 0.915W/°C.....................................................
Operating Junction Temperature Range, TJ−65° to +200°C..................................
Storage Temperature Range, Tstg −65° to +200°C..........................................
Thermal Resistance, Junction−to−Case, RthJC 1.09°C/W....................................
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter SustainingVoltage VCEO(sus) IC = 100mA, IB = 0 100 − − V
Collector Cutoff Current ICEO VCE = 50V, IE = 0 − − 1.0 mA
ICEX VCE = 100V, VBE(off) = 1.5V − − 0.5 mA
VCE = 100V, VBE(off) = 1.5V,
TA = +150°C
− − 5.0 mA
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 − − 2.0 mA
ON Characteristics (Note 1)
DC Current Gain hFE VCE = 3V, IC = 10A 750 −18000
VCE = 3V, IC = 20A 100 − −
Collector−Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 40mA − − 2.0 V
IC = 20A, IB = 200mA − − 3.0 V
Base−Emitter Saturation Voltage VBE(sat) IC = 20A, IB = 200mA − − 4.0 V
Base−Emitter ON Voltage VBE(on) VCE = 3V, IC = 10A − − 2.8 V
Dynamic Characteristics
Small−Signal Current Gain hfe VCE = 3V, IC = 10A, f = 1kHz 300 − −
Magnitude of Common Emitter
Small−Signal Short−Circuit
Forward Current Transfer Ratio
|hfe| VCE = 3V, IC = 10A, f = 1MHz 4.0 − − MHz
Output Capacitance Cob VCB = 10V, IE = 0, f = 0.1MHz − − 400 pF
Note 1. Pulse Test: Pulse Width = 300μs, Duty Cycle = 2%
Schematic Diagram
NPN PNP
B
C
E
B
C
E
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
