SILICON PLASTIC POWER TRANSISTOR NPN 2SD880Y 3A 30W Technical Data ...designed for Low Frequency Power Amplifier. F Collector-Emitter Voltage: VCEO=60V F DC Current Gain: 20 @ IC=3A F TO-220 Package MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage V CEO 60 Vdc Collector - Base Voltage Emitter Base Voltage Collector Current - Continuos V CB V EB IC 60 7 3 Vdc Vdc Adc Base Current IB 0.3 Adc Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage junction Temperature Range PD 30 0.24 -55 to +150 Watts W/C C Max. Unit 4.16 C/W Tj,Tstg THERMAL CHARACTERISTICS Characteristic Thermal resistance junction to case Symbol R thjc ELECTRICAL CHARACTERISTICS :[ Tc = 25 Characteristic * OFF CHARACTERISTICS : Collector-Emitter Breakdown [ Ic =50 mAdc, IB = 0 ] Collector Cutoff Current [ VCB = 60 Vdc, IB = 0 ] Collector-Base Breakdown [ Ic =1mAdc, IE = 0 ] Emitter Cutoff Current [VEB=7Vdc, IC=0] Voltage Min VCEO(sus) 60 Voltage Typ Max 100 BVCBO Unit Vdc 60 Adc Vdc IEBO 100 Adc hFE 100 20 200 VCE(sat) 1 Voltage DYNAMIC CHARACTERISTICS : Current Gain - Bandwidth Product [Ic=0.5Adc,VCE=5Vdc,ftest=1.0 MHz ] Collector Output Capacitance VCB=10V,IE=0,f=1MHz * Symbol ICB0 * ON CHARACTERISTICS (1): DC Current Gain [ Ic = 0.5 Adc , VCE = 5.0 Vdc ] [ Ic =3 Adc , VCE =5.0 Vdc ] Collector-Emitter Saturation Voltage [ Ic = 3Adc , IB = 0.3Adc ) Emitter-Base Saturation [ Ic =0.5Adc, VCE =5V ] C unless otherwise noted ] Vdc 1 VBE(ON) Vdc fT 3 MHz COB 70 pF (1) Pulse Test : Pulse Width <300s , Duty Cycle < 2.0%