LESHAN RADIO COMPANY, LTD. Low Saturation Voltage MMBT1010LT1 MSD1010T1 PNP Silicon Driver Transistors Part of the GreenLineTM Portfolio of devices with energy-conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in the SOT-23 and SC-59 packages which are designed for low power surface mount applications. * Low V CE(sat) , < 0.1 V at 50 mA Applications * LCD Backlight Driver * Annunciator Driver * General Output Device Driver PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT 3 1 2 MAXIMUM RATINGS (T A = 25C) CASE 318-08, STYLE 6 Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol Value Unit V (BR)CBO V (BR)CEO V (BR)EBO 45 15 5.0 Vdc Vdc Vdc IC 100 mAdc Collector Current -- Continuous SOT- 23 3 2 THERMAL CHARACTERISTICS 1 Characteristic Power Dissipation T A =25 C Derate above 25C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range Symbol Max Unit P D (1) 250 mW 1.8 mW/C R JA 556 C/W TJ 150 C C T stg -55 --+150 CASE 318D -04, STYLE 1 SC- 59 COLLECTOR DEVICE MARKING MMBT1010LT1 = GLP; MSD1010T1 = GLP BASE EMITTER ELECTRICAL CHARACTERISTICS Characteristic Symbol Condition Min Max Unit Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage V (BR)CEO V (BR)EBO I CBO I CEO h FE1 (2) V CE(sat)(2) 15 5.0 -- -- 300 -- -- V BE(sat)(2) -- -- 0.1 100 600 0.1 0.1 0.19 1.1 Vdc Vdc A A -- Vdc Base-Emitter Saturation Voltage I C = 10 mA, I B = 0 I E = 10 A,I E = 0 V CB = 20 V, I E = 0 V CE = 10 V, I B = 0 V CE = 5 V,I C = 100 mA I C = 10 mA, I B = 1.0 mA I C = 50 mA, I B = 5.0 mA I C = 100 mA, I B = 10 mA I C = 100 mA, I B = 10 mA -- Vdc (1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. (2) Pulse Test: Pulse Width <300 s, D.C <2%. O3-1/1