AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
v07.0713
General Description
Features
Functional Diagram
Gain: 24 dB
P1dB: +17.5 dBm
Supply Voltage: +4V
50 Ohm Matched Input/Output
Die Size: 2.65 x 1.60 x 0.05 mm
Typical Applications
This HMC-AUH318 is ideal for:
• Short Haul / High Capacity Links
• Test & Measurement Equipment
• E-Band Communication Systems
The HMC-AUH318 is a high dynamic range, three
stage GaAs HEMT MMIC Medium Power Amplier
which operates between 71 and 76 GHz. The HMC-
AUH318 provides 24 dB of gain, and an output
power of +17.5 dBm at 1 dB compression from a +4V
supply voltage. All bond pads and the die backside
are Ti/Au metallized. The HMC-AUH318 GaAs
HEMT MMIC Medium Power Amplier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
HMC-AUH318
Electrical Specications[1], TA = +25° C, Vdd1 = Vdd2 = 4V, Idd1 = Idd2 = 80 mA [2]
Parameter Min. Ty p. Max. Units
Frequency Range 71 - 76 GHz
Gain 21 24 dB
Input Return Loss 7dB
Output Return Loss 4dB
Output power for 1 dB Compression (P1dB) 17.5 dBm
Saturated Output Power (Psat) 20 dBm
Supply Current (Idd1+Idd2) 160 mA
[1] Unless otherwise indicated, all measurements are from probed die.
[2] Adjust Vgg1, Vgg2 independently between -0.8V to +0.3V (typically -0.1V) to achieve drain currents of Idd1 = 80 mA and Idd2 = 80 mA.
Products and product information are subject to change without notice.
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 2
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC-AUH318
v07.0713 GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
Fixtured Output Power vs. Frequency
Output Return Loss vs. Frequency
Linear Gain vs. Frequency
Input Return Loss vs. Frequency
-25
-20
-15
-10
-5
0
68 70 72 74 76 78 80
RETURN LOSS (dB)
FREQUENCY (GHz)
-14
-12
-10
-8
-6
-4
-2
0
68 70 72 74 76 78 80
RETURN LOSS (dB)
FREQUENCY (GHz)
16
17
18
19
20
21
70 71 72 73 74 75
P1dB
PSat
POUT (dBm)
FREQUENCY (GHz)
18
19
20
21
22
23
24
25
26
68 70 72 74 76 78 80
GAIN (dB)
FREQUENCY (GHz)
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC-AUH318
v07.0713 GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
Outline Drawing
Absolute Maximum Ratings Reliability Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DO NOT EXPOSE PRODUCT TO CONDENSING
MOISTURE WHILE UNDER OPERATION.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. BACKSIDE METALLIZATION: GOLD.
3. BACKSIDE METAL IS GROUND.
4. BOND PAD METALLIZATION: GOLD.
5. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
6. OVERALL DIE SIZE ±.002”
7. DIE THICKNESS IS 0.002” [0.050 mm]
8 TYPICAL BOND PAD IS 0.004” [0.100 mm] SQUARE UNLESS NOTED
Nominal 4.0V Supply to GND 0.0V to +4.5V
Gate Bias Voltage -0.8V to +0.3V
RF Input Power (Vdd = +4.0V) +3 dBm
Storage Temperature -65 to +150 °C
Max Peak Reow Temperature 260 °C
Junction Temperature to Maintain
1 Million Hour MTTF 180 °C
Nominal Junction Temperature (T = 85 °C) 156.5 °C
Thermal Resistance (Junction to Die Bottom) 111.7 ° C/ W
Operating Temperature -55 to +85 °C
Drain Bias Current (Idd1) 100 mA
Drain Bias Current (Idd2) 100 mA
Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 4
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Pad Number Function Description Interface Schematic
1RFIN This pad is AC coupled
and matched to 50 Ohms.
2, 3 Vgg1, Vgg2
Gate control for amplier. Please follow “MMIC Amplier
Biasing Procedure” application note. See assembly for
required external components.
4RFOUT This pad is AC coupled
and matched to 50 Ohms.
5, 6 Vdd1, Vdd2 Power Supply Voltage for the amplier. See assembly for
required external components.
Die Bottom GND Die bottom must be connected to RF/DC ground.
Pad Descriptions
HMC-AUH318
v07.0713 GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
Application Circuit
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Note 1: Bypass caps should be 100 pF (approximately) single-layer placed no farther than 30 mils from the amplier.
Note 2: Best performance is obtained by minimizing the length of the ribbon, 1.5 by 0.5 mil, on the input and output.
Assembly Diagram
HMC-AUH318
v07.0713 GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 6
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127 mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1).
Microstrip substrates should be placed as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076 mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD pro-
tective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning sys-
tems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias
cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with
a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball
bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with
a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable
bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
0.05mm (0.002”) Thick GaAs MMIC
Ribbon Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
HMC-AUH318
v07.0713 GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz