2SK2256-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators UPS DC-DC converters General purpose power amplifier 3. Source JEDEC EIAJ TO-220AB SC-46 Equivalent circuit schematic Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] IDR VGS PD Tch Tstg Rating 250 18 72 18 30 80 +150 -55 to +150 Unit V A A A V W C C Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Symbol V(BR)DSS VGS(th) IDSS Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=250V VGS=0V Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr VGS=30V VDS=0V ID=9A VGS=10V ID=9A VDS=25V VDS =25V VGS=0V f=1MHz VCC=150V RG=10 ID=18A VGS=10V L=100H Min. Typ. Max. 250 2.5 Tch=25C Tch=125C Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C 3.0 3.5 10 500 0.2 1.0 10 100 0.13 0.18 7.0 14.0 1750 2650 290 440 65 100 30 45 50 75 80 120 70 110 18 1.0 1.5 150 1.0 Units V V A mA nA S pF ns A V ns C Thermal characteristics Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case Min. Typ. Max. 75.0 1.56 Units C/W C/W 1 2SK2256-01 FUJI POWER MOSFET Characteristics Typical output characteristics On state resistance vs. Tch 0.5 50 0.4 40 0.3 RDS(on) ID 30 [A] [] 0.2 20 0.1 10 0 0 10 0 -50 20 0 VDS [ V ] 50 Tch [ C ] 100 150 Typical Drain-Source on state resistance vs. ID Typical transfer characteristics 40 0.5 0.4 30 0.3 ID [A] RDS(on) 20 [] 0.2 10 0.1 0 0 0 2 4 6 VGS [ V ] 8 0 10 10 20 ID [ A ] 30 40 Gate threshold voltage vs. Tch Typical forward transconductance vs. ID 20 5 16 4 12 3 gfs [S] VGS(th) [V] 8 2 4 1 0 0 10 ID 20 [A] 30 40 0 -50 0 50 100 150 Tch [ C ] 2 2SK2256-01 FUJI POWER MOSFET Typical input charge Typical capacitance vs. VDS 101 20 200 100 VDS [V] C [nF] VGS [V] 100 10 10-1 10-2 0 0 10 20 30 40 0 20 40 60 Qg [ nC ] VDS [ V ] 80 100 0 Allowable power dissipation vs. Tc Forward characteristics of reverse diode 100 102 80 101 60 IF [ A ] 100 PD [W] 40 10-1 20 10-2 0 0 0.5 VSD 1.0 [V] 1.5 0 50 100 150 Tc [ C ] Safe operating area 102 Transient thermal impedance 101 ID [A] 100 100 Rth [C/W] 10-1 10-1 10-2 10-5 10-4 10-3 10-2 t [ sec. ] 10-1 100 101 10-2 0 10 101 102 VDS [ V ] 103 3