1
Item Symbol Rating Unit
Drain-source voltage V DS 250
Continuous drain current ID18
Pulsed drain current ID(puls] 72
Continuous reverse drain current IDR 18
Gate-source peak voltage VGS ±30
Max. power dissipation PD80
Operating and storage Tch +150
temperature range Tstg
2SK2256-01 FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
V
A
A
A
V
W
°C
°C
-55 to +150
FAP-IIA SERIES
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
Min. Typ. Max. Units
V
V
µA
mA
nA
Ω
S
pF
ns
A
V
ns
µC
Min. Typ. Max. Units
Thermal resistance Rth(ch-a) channel to ambient
Rth(ch-c) channel to case 75.0
1.56 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
(ton=td(on)+tr)
Turn-off time toff
(toff=td(off)+tf)
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=250V V GS=0V Tch=25°C
Tch=125°C
VGS=±30V VDS=0V
ID=9A VGS=10V
ID=9A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=150V RG=10 Ω
ID=18A
VGS=10V
L=100µH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs Tch=25°C
250
2.5 3.0 3.5
10 500
0.2 1.0
10 100
0.13 0.18
7.0 14.0
1750 2650
290 440
65 100
30 45
50 75
80 120
70 110
18 1.0 1.5
150
1.0
Gate(G)
Source(S)
Drain(D)
Outline Drawings
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
VGS=±30V Guarantee
Avalanche-proof
Applications
Switching regulators
UPS
DC-DC converters
General purpose power amplifier JEDEC
EIAJ TO-220AB
SC-46
TO-220AB
3.
Source
2
Characteristics
2SK2256-01
FUJI POWER MOSFET
Typical output characteristics
VDS [ V ]
ID
[ A ]
On state resistance vs. Tch
RDS(on)
[ Ω ]
Tch [ °C ]
Typical transfer characteristics
VGS [ V ]
ID
[ A ]
Typical Drain-Source on state resistance vs. ID
ID [ A ]
RDS(on)
[ Ω ]
Typical forward transconductance vs. ID
ID [ A ]
gfs
[ S ]
Gate threshold voltage vs. Tch
Tch [ °C ]
VGS(th)
[ V ]
-50 0 50 100 150
0 10 20 30 40
50
40
30
20
10
0 0 10 20
0.5
0.4
0.3
0.2
0.1
0
0 2 4 6 8 10
-50 0 50 100 150
0 10 20 30 40
20
16
12
8
4
0
40
30
20
10
0
5
4
3
2
1
0
0.5
0.4
0.3
0.2
0.1
0
3
FUJI POWER MOSFET
Typical capacitance vs. VDS
VDS [ V ]
C
[nF]
Forward characteristics of reverse diode
VSD [ V ]
IF
[ A ]
Allowable power dissipation vs. Tc
Tc [ °C ]
PD
[ W ]
Transient thermal impedance
t [ sec. ]
Rth
[°C/W]
Safe operating area
ID
[ A ]
VDS [ V ]
Typical input charge
VDS
[ V ]
Qg [ nC ]
VGS
[ V ]
0 0.5 1.0 1.5
0 20 40 60 80 100
0 10 20 30 40
200
100
0
20
10
0
100
80
60
40
20
0
101
100
10-1
10-2
102
101
100
10-1
10-2
0 50 100 150
100 101 102 103
10-5 10-4 10-3 10-2 10-1 100 101
2SK2256-01
100
10-1
10-2
102
101
100
10-1
10-2
