2N5038 & 2N5039
Silicon NPN Transistor
Power Amp, Switch
TO−3 Type Package
Description:
The 2N5038 and 2N5039 are silicon NPN transistors in a TO−3 type package that have fast switching
speeds and high current capacity that ideally suit these devices for use in switching regulators, inverters,
wide−band amplifiers and power oscillators in industrial and commercial applications.
Features:
DHigh Speed: tf = 0.5s Max.
DHigh Current: IC(max) = 30A
DLow Collector−Emitter Saturation Voltage: VCE(sat) = 2.5V max @ IC = 20A
Absolute Maximum Ratings:
Collector−Base Voltage, VCBO
2N5038 150V....................................................................
2N5039 120V....................................................................
Collector−Emitter Voltage, VCEV
2N5038 150V....................................................................
2N5039 120V....................................................................
Emitter−Base Voltage, VEBO 7V..........................................................
Collector Current, IC
Continuous 20A..................................................................
Peak (Note 1) 30A................................................................
Continuous Base Current, IB5A..........................................................
Total Device Dissipation (TC = +25C), PD140W...........................................
Derate Above 25C 0.8W/C.......................................................
Operating Junction Temperature Range, TJ−65 to +200C..................................
Storage Temperature Range, Tstg −65 to +200C..........................................
Maximum Thermal Resistance, Junction−to−Case, RthJC 1.25C/W...........................
Note 1. Pulse Test: Pulse Width 10ms, Duty Cycle 50%.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage
2N5038 VCEO(sus) IC = 200mA, IB = 0, Note 2 90 − − V
2N5039 75 − − V
Collector Cutoff Current
2N5038 ICEX VCE = 140V VEB(off) = 1.5V − − 50 mA
2N5039 VCE = 110V − − 50 mA
2N5038 VCE = 100V VEB(off) = 1.5V,
TC = +150C
− − 10 mA
2N5039 VCE = 85V − − 10 mA
Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Emitter Cutoff Current
2N5038 IEBO VBE = 5V, IC = 0 − − 5 mA
2N5039 − − 15 mA
Both VBE = 7V, IC = 0 − − 50 mA
ON Characteristics (Note 2)
DC Current Gain
2N5038 hFE VCE = 5V IC = 12A 20 −100
2N5039 IC = 10A 20 −100
Collector−Emitter Saturation Voltage VCE(sat) IC = 20A, IB = 5A − − 2.5 V
Base−Emitter Saturation Voltage VBE(sat) IC = 20A, IB = 5A − − 3.3 V
Dynamic Characteristics
Magnitude of Common−Emitter
Small−Signal Short−Circuit
Forward Current Transfer Ratio
|hfe| VCE = 10V, IC = 2A, f = 5MHz 12 − −
Switching Characteristics (Resistive Load)
2N5038
Rise Time trVCC = 30V, IC = 12A, IB1 = IB2 = 1.2A − − 0.5 s
Storage Time ts− − 1.5 s
Fall Time tf− − 0.5 s
2N5039
Rise Time trVCC = 30V, IC = 10A, IB1 = IB2 = 1A − − 0.5 s
Storage Time ts− − 1.5 s
Fall Time tf− − 0.5 s
Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
