PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 - 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Two-carrier WCDMA 3GPP Drive-up * Broadband internal input and output matching * Wide video bandwidth * Typical single-carrier WCDMA performance, 1880 MHz, 30 V - Output power = 125 W - Efficiency = 31% - Gain = 17 dB - PAR = 5.5 dB @ 0.01% CCDF probability - ACPR @ 5 MHz = -37 dBc * Increased negative gate-source voltage range for improved performance in Doherty amplifiers * Capable of handling 10:1 VSWR @ 30 V, 300 W (CW) output power 5 * Integrated ESD protection 0 * Excellent thermal stability * Pb-free and RoHS compliant -25 35 -30 30 IMD Up -40 25 IMD Low 20 -45 15 -50 10 ACPR -55 Efficiency -60 b183408sv gr1 36 38 40 42 44 46 48 50 Drain Efficiency (%) IMD & ACPR (dBc) VDD = 30 V, IDQ = 2.6A, = 1880 MHz, 3GPP WCDMA signal, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84 MHz -35 PTFB183408SV Package H-37275G-6/2 52 Average Output Power (dBm) RF Characteristics Single-carrier WCDMA Measurements (device with straight leads, combined outputs--tested in Infineon test fixture) VDD = 30 V, IDQ = 2.65 A, POUT = 80 W average, = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 16 17 -- dB Drain Efficiency D 24 25.5 -- % Intermodulation Distortion IMD -- -35 -34 dBc All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 15 Rev. 03, 2014-03-07 PTFB183408SV RF Characteristics (cont.) Single-carrier WCDMA Specifications (not subject to production test - verified by design / characterization in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, IQ clipping, channel bandwidth = 3.84 MHz, Input signal PAR = 7.5 dB @ 0.01% CCDF probability Characteristic Gain Conditions Symbol POUT (AVG) = 49 dBm 1805 MHz 1842 MHz 1880 MHz (Typ) (Typ) (Typ) 17.1 17.3 17.5 17.0 17.15 17.4 25 24.5 24 31 30 30 6.5 6.5 6.5 5.5 5.5 5.5 -43 -42.5 -41 -36 -35 -34 Gps POUT (AVG) = 51 dBm Drain Efficiency D POUT (AVG) = 49 dBm POUT (AVG) = 51 dBm Output PAR at 0.01% POUT (AVG) = 49 dBm dB POUT (AVG) = 51 dBm Adjacent Channel Power Ratio POUT (AVG) = 49 dBm ACPR POUT (AVG) = 51 dBm Unit dB % dB dBc Two-tone Specifications (not subject to production test - verified by design / characterization in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, POUT = 310 W PEP, = 1880 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps -- 17.5 -- dB Drain Efficiency D -- 35 -- % Intermodulation Distortion IMD -- 30 -- dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 -- -- V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS -- -- 1.0 A Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS -- -- 10.0 A On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) -- 0.05 -- Operating Gate Voltage VDS = 30 V, IDQ = 2.6 A VGS 2.3 2.8 3.3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS -- -- 1.0 A Data Sheet 2 of 15 Rev. 03, 2014-03-07 PTFB183408SV Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS -6 to +10 V Junction Temperature TJ 200 C Storage Temperature Range TSTG -40 to +150 C Thermal Resistance (TCASE = 70C, 340 W CW) RJC 0.2 C/W Ordering Information Type and Version Order Code Package Description Shipping PTFB183408SV V2 R250 PTFB183408SVV2R250XTMA1 H-37275G-6/2, ceramic open-cavity, formed leads Tape & Reel, 250 pcs Typical Performance (data taken in a production test fixture) Two-carrier WCDMA 3GPP Drive-up Two-carrier WCDMA 3GPP VDD = 30 V, IDQ = 2.6 A, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84 MHz VDD = 30 V, IDQ = 2.6 A, = 1880 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84MHz 1880 Lower -25 19 40 18 30 1880 Upper 1842.5 Upper 1805 Lower 1805 Upper Gain (dB) IMD (dBc) -35 -40 -45 Gain 17 20 16 10 -50 Drain Efficiency (%) 1842.5 Lower -30 Efficiency 15 -55 36 38 40 42 44 46 48 50 38 40 42 44 46 48 50 52 Average Output Power (dBm) Average Output Power (dBm) Data Sheet 0 36 52 3 of 15 Rev. 03, 2014-03-07 PTFB183408SV Typical Performance (cont.) Two-tone Broadband Gain, Efficiency & Return Loss vs. Frequency Two-tone Drive-up VDD = 30 V, IDQ = 2.6 A, 1 = 1880 MHz, 2 = 1879 MHz 0 -10 Efficiency -20 30 -30 IMD3 Gain 20 -40 10 -50 1730 1767.5 1805 1842.5 1880 1917.5 -25 40 -30 35 -35 30 -40 20 -50 15 -55 10 -60 5 Efficiency -65 1955 0 39 41 43 Frequency (MHz) 45 47 49 51 53 55 Output Power, PEP (dBm) Two-tone Drive-up (over temp) Two-tone Drive-up (PO UT -max 3rd order IMD @ -30dBc) VDD = 30 V, IDQ = 2.6 A, 1 = 1842.5 MHz, 2 = 1841.5 MHz VDD = 30 V, IDQ = 2.6 A, 1 = 1880 MHz, 2 = 1879 MHz 19 18 50 19 40 18 50 16 20 Efficiency 15 17 Gain (dB) 30 Efficiency (%) 17 40 Gain Gain Gain (dB) 25 IMD3 -45 10 30 16 20 +85C Efficiency +25C 15 Efficiency (%) 40 IMD (dBc) RL 50 Return Loss (dB), IMD (dBc) Gain (dB) / Efficiency (%) 60 Efficiency (%) VDD = 30 V, IDQ = 2.6 A, PO UT = 170 W 10 -30C 14 0 40 42 44 46 48 50 52 54 14 56 41 43 45 47 49 51 53 55 57 Output Power, PEP (dBm) Output Power, PEP (dBm) Data Sheet 0 39 4 of 15 Rev. 03, 2014-03-07 PTFB183408SV Typical Performance (cont.) Two-tone Drive-up at Selected Frequencies Intermodulation Distortion vs. Output Power VDD = 30 V, IDQ = 2.6 A, tone spacing = 1 MHz VDD = 30 V, IDQ = 2.6 A, 1 = 1880 MHz, 2 = 1879 MHz -20 -20 1880MHz -30 3rd Order -30 1805MHz IMD (dBc) -40 -50 -40 5th -50 7th -60 -70 -60 39 41 43 45 47 49 51 53 55 39 57 41 Intermodulation Distortion vs. Tone Spacing IMD Lower IMD Upper ACP (dBc) -30 IMD (dBc) 51 IMD3 -40 55 57 35 -30 30 Efficiency IMD5 25 -40 20 -45 15 -50 10 ACP Low -50 ACP Up -55 -55 53 -25 -35 -25 -45 49 VDD = 30 V, IDQ = 2.6 A, = 1880 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz -10 -35 47 Single-carrier Drive-up, 1880 MHz = 1842.5 MHz, PO UT = 330 W (PEP), VDD = 30 V, IDQ = 2.6 A -20 45 Output Power, PEP (dBm) Output Power, PEP (dBm) -15 43 5 Drain Efficiency (%) IMD 3rd Order (dBc) 1842.5MHz IMD7 -60 -60 1 10 100 Two Tone Spacing (MHz) Data Sheet 0 36 38 40 42 44 46 48 50 52 54 Average Output Power (dBm) 5 of 15 Rev. 03, 2014-03-07 PTFB183408SV Typical Performance (cont.) Single-carrier Broadband Performance Single-carrier Drive-up, 1880 MHz VDD = 30 V, IDQ = 2.6 A, PO UT = 125 W V DD = 30 V, IDQ = 2.6 A, = 1880 MHz, 0 -5 -10 RL Gain 20 -15 15 -20 10 -25 PARC 5 -30 0 -35 ACP -5 1693 1768 -40 1843 1918 20 16 Efficiency 0 12 PARC @ .01% CCDF -20 8 4 -60 0 1993 36 38 48 50 52 54 VDD = 30 V, IDQ = 2.6 A, = 1805 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz 40 20 Gain Efficiency 0 12 PARC @ .01% CCDF -20 -40 ACP PARC & PARC Gain (dB) 20 16 Efficiency (%) / ACP(dBc) PARC & PARC Gain (dB) 46 Single-carrier Drive-up, 1805 MHz 40 38 40 42 44 46 48 50 52 16 20 Efficiency 0 12 PARC @ .01% CCDF -20 8 4 -40 ACP -60 0 -60 0 36 54 38 40 42 44 46 48 50 52 54 Average Output Power (dBm) Average Output Power (dBm) Data Sheet 44 VDD = 30 V, IDQ = 2.6 A, = 1842 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz Gain 36 42 Single-carrier Drive-up, 1842 MHz 20 4 40 Average Output Power (dBm) Frequency (MHz) 8 -40 ACP Efficiency (%) / ACP(dBc) 25 Gain Efficiency (%) / ACP (dBc) 30 40 20 PARC & PARC Gain (dB) Efficiency Return Loss (dB) / ACP (dBc) Gain & PARC (dB) / Efficiency (%) 35 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz 6 of 15 Rev. 03, 2014-03-07 PTFB183408SV RD G E NE RA T O Z Load jX R jX 1730 1.86 -4.25 0.55 -2.78 1768 1.77 -4.06 0.54 -2.66 1805 1.68 -3.88 0.53 -7.54 1843 1.61 -3.70 0.52 -2.43 1880 1.56 -3.53 0.51 -2.32 1918 1.51 -3.37 0.51 -2.21 1955 1.47 -3.22 0.5 -2.11 0.3 Z Source 1955 MHz 1730 MHz 0.1 <--- R 1730 MHz 1955 MHz L MHz Z Load E W AV Z Source Frequency 0.2 0.1 0.0 D D LOA D S T OW AR E NGTH - W AV E LE NGT H S T OW A S G G Z0 = 50 0 .1 D Z Load 0. 2 Z Source R --> Broadband Circuit Impedance (combined leads) 0. 2 0. 3 See next page for reference circuit information Data Sheet 7 of 15 Rev. 03, 2014-03-07 PTFB183408SV Reference Circuit S3 1 8 In Out NC C803 1000 pF R803 10 Ohm 5 6 3 C801 1000 pF 2 R801 1200 Ohm S1 C 2 S2 3 4 R804 10 Ohm 1 S E R105 10 Ohm NC 4 7 B 3 C802 1000 pF R802 1300 Ohm TL141 TL151 TL160 R102 10 Ohm TL101 TL138 TL167 TL120 TL136 2 TL142 3 1 2 3 1 TL137 TL158 C102 100000 pF TL159 TL163 TL130 C111 10 pF 2 3 R103 10 Ohm 1 TL102 TL135 C110 4700000 pF TL103 2 TL143 TL118 3 TL105 TL155 TL146 TL156 TL147 C109 10 pF 1 TL109 2 2 TL175 TL173 1 3 PORT GATE DUT 2 TL122 TL116 PORT 1RF IN TL157 TL162 3 1 TL104 TL114 TL172 TL171 C104 10 pF TL113 TL145 1 TL111 TL152 C106 1.7 pF TL110 TL161 1 3 2 3 2 C107 1.7 pF TL112 TL115 C103 0.7 pF C108 10 pF TL123 TL153 TL149 TL154 TL124 TL148 TL170 TL117 TL125 TL126 TL108 TL169 TL165 3 2 1 1 TL107 TL176 TL174 2 3 PORT GATE DUT 3 C101 4700000 pF 2 TL164 TL134 3 1 TL127 TL139 C112 10 pF C105 100000 pF R104 10 Ohm 2 TL168 3 1 TL128 TL132 TL140 TL129 R101 10 Ohm TL131 TL133 TL166 2 TL144 TL119 3 3 2 1 b18 340 8sv_ bdi n_0 6-2 8-2 012 1 r = 3.66 H = 20 mil RO/RO4350B1 TL106 TL150 TL121 Reference circuit input schematic for = 1880 MHz Data Sheet 8 of 15 Rev. 03, 2014-03-07 PTFB183408SV Reference Circuit (cont.) C202 10000000 pF TL228 TL233 TL227 TL221 2 TL224 3 1 2 3 1 C203 10000000 pF VDD DCVS TL203 C214 1000000 pF 1 TL204 3 2 TL205 C205 2200000 pF 1 TL234 3 2 C212 1.3 pF TL229 PORT VDD 3 C210 1.3 pF TL209 TL210 TL207 TL206 TL217 DRAINPORT DUT TL214 TL202 2 TL218 3 1 2 C201 1.4 pF TL239 TL238 2 TL219 3 1 TL201 2 TL211 C216 10 pF TL216 TL212 TL237 3 1 1 2 3 4 4 TL213 TL208 PORT VDD 4 TL215 RFPORT OUT 1 C208 0.4 pF TL240 C209 1.8 pF C211 1.3 pF C213 1.3 pF TL232 4 C206 2200000 pF 1 TL235 3 2 TL230 C215 1000000 pF 1 TL222 3 2 C204 10000000 pF r = 3.66 TL236 TL231 TL226 TL225 TL220 1 TL223 H = 20 mil RO/RO4350B1 3 3 2 1 2 C207 1000000 pF DCVS VDD Reference circuit output schematic for = 1880 MHz Data Sheet 9 of 15 Rev. 03, 2014-03-07 PTFB183408SV Reference Circuit (cont.) Reference Circuit Assembly DUT PTFB183408SV Test Fixture Part No. LTN/PTFB183408SV PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66 Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Electrical Characteristics at 1880 MHz Transmission Line Electrical Characteristics Dimensions: mm Dimensions: mils Input TL101, TL129 0.017 , 53.11 W = 1.02, L = 1.65 W = 40, L = 65 TL102, TL127 0.002 , 62.65 W = 0.76, L = 0.20 W = 30, L = 8 TL103, TL139, TL126, TL159 0 , 40.91 W = 1.52, L = 0.03 W = 60, L = 1 TL104 0.212 , 62.65 W = 0.76, L = 20.20 W = 30, L = 799 TL105, TL153 0.008 , 28.26 W = 2.54, L = 0.76 W = 100, L = 30 TL106 0.005 , 62.65 W = 0.76, L = 0.51 W = 30, L = 20 TL107, TL157 0.018 , 7.86 W = 11.43, L = 5.36 W = 450, L = 211 TL108, TL172 0.004 , 7.86 W = 11.43, L = 0.34 W = 450, L = 13 TL109, TL170 0.002 , 7.86 W = 11.43, L = 0.20 W = 450, L = 8 TL110 0.022 , 31.94 W = 2.16, L = 2.03 W = 85, L = 80 TL111 0.029 , 48.71 W = 1.17, L = 2.71 W = 46, L = 107 TL112 0 , 62.65 W = 0.76, L = 0.03 W = 30, L = 1 TL113 0.016 , 48.71 W = 1.17, L = 1.55 W = 46, L = 61 TL114 0.029 , 48.71 W = 1.17, L = 2.743 W = 46, L = 108 TL121, TL141 0.014 , 33.39 W = 2.03, L = 1.27 W = 80, L = 50 TL122, TL123 0 , 62.65 W = 0.76, L = 0.00 W = 30, L = 0 TL124, TL156 0.014 , 16.84 W = 4.83, L = 1.27 W = 190, L = 50 TL125 0.013 , 62.65 W = 0.76, L = 1.27 W = 30, L = 50 TL128, TL130 0.013 , 53.11 W = 1.02, L = 1.26 W = 40, L = 50 TL131, TL138 0.015 , 53.11 W = 1.02, L = 1.40 W = 40, L = 55 TL132, TL137 0 , 33.39 W = 2.03, L = 0.03 W = 80, L = 1 TL133, TL136 0.080 , 53.11 W = 1.02, L = 7.62 W = 40, L = 300 TL134, TL135 0.008 , 53.11 W = 1.02, L = 0.76 W = 40, L = 30 TL140, TL158 0.015 , 62.65 W = 0.76, L = 1.42 W = 30, L = 56 TL142, TL144 0.011 , 62.65 W1 = 0.76, W2 = 0.76, W3 = 1.02 W1 = 30, W2 = 30, W3 = 40 TL143, TL168, TL163, TL164 0.016 , 62.65 W1 = 0.76, W2 = 0.76, W3 = 1.52 W1 = 30, W2 = 30, W3 = 60 TL145 0.008 , 48.71 W1 = 1.17, W2 = 1.17, W3 = 0.76 W1 = 46, W2 = 46, W3 = 30 TL154, TL155 0.006 , 16.84 W = 4.83, L = 0.51 W = 190, L = 20 TL160 0.004 , 62.65 W = 0.76, L = 0.40 W = 30, L = 16 table continued on page 11 Data Sheet 10 of 15 Rev. 03, 2014-03-07 PTFB183408SV Reference Circuit (cont.) Electrical Characteristics at 1880 MHz Transmission Line Electrical Characteristics Dimensions: mm Dimensions: mils TL161 0.024 , 28.26 W1 = 2.54, W2 = 2.54, W3 = 2.16 W1 = 100, W2 = 100, W3 = 85 TL162, TL165 0.012 , 7.86 W1 = 11.43, W2 = 11.43, W3 = 1.026 W1 = 450, W2 = 450, W3 = 40 TL166, TL167 0.021 , 53.11 W1 = 1.03, W2 = 1.02, W3 = 2.03 W1 = 40, W2 = 40, W3 = 80 TL169, TL171 0.009 , 7.86 W1 = 11.43, W2 = 11.43, W3 = 0.76 W1 = 450, W2 = 450, W3 = 30 TL173, TL174 0.044 , 7.13 W = 12.70, L = 3.79 W = 500, L = 149 TL201 (taper) 0.012 , 12.04 / 34.02 W1 = 7.11, W2 = 1.98, L = 1.02 W1 = 280, W2 = 78, L = 40 TL202 (taper) 0.009 , 5.75 / 7.78 W1 = 16.00, W2 = 11.56, L = 0.76 W1 = 630, W2 = 455, L = 30 TL203 0.020 , 20.50 W = 3.81, L = 1.78 W = 150, L = 70 TL204 0.020 , 20.50 W1 = 3.81, W2 = 3.81, W3 = 1.78 W1 = 150, W2 = 150, W3 = 70 TL205 0.003 , 20.50 W = 3.81, L = 0.25 W = 150, L = 10 TL206 (taper) 0.024 , 3.59 / 12.04 W1 = 26.37 W2 = 16.00, L = 2.03 W1 = 1038, W2 = 630, L = 80 TL208, TL209, TL213, TL214, TL239, TL240 0.000 , 141.78 W = 0.03, L = 0.03 W = 1, L = 1 TL210 0.057 , 3.59 W = 26.37, L = 4.80 W = 1038, L = 189 TL211 0.045 , 34.02 W = 1.98, L = 4.12 W = 78, L = 162 TL212 0.005 , 46.18 W = 1.27, L = 0.43 W = 50, L = 17 TL215 0.067 , 46.18 W = 1.27, L = 6.03 W = 50, L = 248 TL216 0.014 , 28.26 W = 2.54, L = 1.27 W = 100, L = 50 TL217 0.000 , 5.75 W1 = 16.00, W2 = 0.03, W3 = 16.00, W4 = 0.03 W1 = 630, W2 = 1, W3 = 630, W4 = 1 TL218 0.000 , 7.78 W1 = 11.56, W2 = 0. 03, W3 = 11.56, W4 = 0.03 W1 = 455, W2 = 1, W3 = 455, W4 = 1 TL219 0.000 , 12.04 W1 = 7.11, W2 = 0. 03, W3 = 7.11, W4 = 0.025 W1 = 280, W2 = 1, W3 = 280, W4 = 1 TL220, TL221, TL223, TL224 0.042 , 20.50 W1 = 3.81, W2 = 3.81, W3 = 3.81 W1 = 150, W2 = 150, W3 = 150 TL222 0.020 , 20.50 W1 = 3.81, W2 = 3.81, W3 = 1.78 W1 = 150, W2 = 150, W3 = 70 TL225, TL227 0.023 , 20.50 W = 3.81, L = 2.08 W = 150, L = 82 TL226, TL228 0.067 , 20.50 W = 3.81, L = 6.02 W = 150, L = 237 TL229, TL232 0.028 , 20.50 W = 3.81, L = 2.54 W = 150, L = 100 TL230 0.003 , 20.50 W = 3.81, L = 0.25 W = 150, L = 10 TL231, TL233 0.099 , 20.50 W = 3.81, L = 8.92 W = 150, L = 351 TL234, TL235 0.020 , 20.50 W1 = 3.81, W2 = 3.81, W3 = 1.78 W1 = 150, W2 = 150, W3 = 70 TL236 0.020 , 20.50 W = 3.81, L = 1.78 W = 150, L = 70 TL237 0.022 , 46.18 W1 = 1.27, W2 = 1.27, W3 = 2.03 W1 = 50, W2 = 50, W3 = 80 TL238 (taper) 0.009 , 7.78 / 12.04 W1 = 11.56, W2 = 7.112, L = 0.79 W1 = 455, W2 = 280, L = 31 Input (cont.) Output Data Sheet 11 of 15 Rev. 03, 2014-03-07 PTFB183408SV Reference Circuit (cont.) C803 C801 VDD R803 RO4350, .020 RO4350, .020 (60) C802 R802 S1 C202 VDD R103 C203 C111 C102 C212 C210 C201 C216 C110 C109 C106 C107 RF_IN C104 10 F RF_OUT C209 C208 C211 C213 C103 C108 C204 C101 C105 R101 C112 R104 + C206 C215 10 F R804 C214 C205 R801 R102 + + S2 S3 R105 (60) C207 VDD PTFB183408_OUT_02 PTFB183408_IN_02 b183408sv_CD_03-07-2014 Reference circuit assembly diagram (not to scale) Data Sheet 12 of 15 Rev. 03, 2014-03-07 PTFB183408SV Reference Circuit (cont.) Components Information Component Description Suggested Manufacturer P/N C101, C110 Chip capacitor, 4.7 F Panasonic Electronic Components ECS-T1CY475R C102, C105 Chip capacitor, 0.1 F Panasonic Electronic Components ECJ-3VB1H104K C103 Chip capacitor, 0.7 pF ATC ATC100B0R7BW500XB C104, C108, C109 Chip capacitor, 10 pF ATC ATC100B100JW500XB C106, C107 Chip capacitor, 1.7 pF ATC ATC100A1R7BW150XB C111, C112 Chip capacitor, 10 pF ATC ATC100A100JW500XB C801, C802, C803 Chip capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K R101, R102, R105, R803, R804 Resistor, 10 Panasonic Electronic Components ERJ-8GEYJ100V R103, R104 Resistor, 10 Panasonic Electronic Components ERJ-3GEYJ100V R801 Resistor, 1200 Panasonic Electronic Components ERJ-3GEYJ122V R802 Resistor, 1300 Panasonic Electronic Components ERJ-3GEYJ132V S1 Potentiometer, 2k Bourns Inc 3224W-1-202E S2 Transistor Infineon Technologies BCP56 S3 Voltage Regulator Texas Instruments LM7805 C201 Chip capacitor, 1.4 pF ATC ATC100B1R4BW500XB C202, C207 Chip capacitor, 10 F Taiyo Yuden UMK325C7106MM-T C203, C204 Tantalum capacitor, 10 F AVX Corporation TPSE106K050R0400 C205, C206 Chip capacitor, 2.2 F TDK Corporation C4532X7R1H225M160KA C208 Chip capacitor, 0.4 pF ATC ATC100B0R4BW500XB C209 Chip capacitor, 1.8 pF ATC ATC100B1R8BW500XB C210, C211, C212, C213 Chip capacitor, 1.3 pF ATC ATC100B1R3BW500XB C214, C215 Chip capacitor, 1 F TDK Corporation C4532X7R2A105M230KA C216 Chip capacitor, 10 pF ATC ATC100B100JW500XB Input Output Pinout Diagram V2 V1 D1 Pin V1 V2 G1 G2 D1 D2 S D2 S G1 Data Sheet G2 H-34275G-6-2_gw_pd_10-10-2012 13 of 15 Description VDD Device 1 VDD Device 2 Gate Device 1 Gate Device 2 Drain Device 1 Drain Device 2 Source (flange) Rev. 03, 2014-03-07 PTFB183408SV Package Outline Specifications Package H-37275G-6/2 with Formed Leads >@ ; > @ 63+99 >@ ;'[ >@ ; >@ ; ; >@ ; >@ &/ 9 ' ' >@ * ;5 >5 @ >@ &/ * &/ &/ ; >@ ; >@ ; >@ 63+''** > @ >@ >@ ; > @ 9 >@ &/ ; >@ &/ +*BJZBSRBB >@ 6 Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. D1, D2 - drains; G1, G2 - gates; S - source; V1, V2 - VDD. 5. Lead thickness: 0.10 + 0.076/-0.025 mm [0.004+0.003/-0.001 inch]. 6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 14 of 15 Rev. 03, 2014-03-07 PTFB183408SV V2 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2012-03-23 Advance All Data Sheet reflects advance specification for product development 02 2012-06-28 Production All Data Sheet reflects released product specification 03 2014-03-07 Production All 1 3 12 13 Updated V1 to V2, updated package & package related drawings throughout added statement "device with straight leads" into single-carrier WCDMA measurement table updated ordering table updated reference design circuit - corrected mislabels of R102, C102, C110 Removed R805, corrected R801, R802, R803 in component table. updated pinout diagram to show gullwing version We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2014-03-07 Published by Infineon Technologies AG 85579 Neubiberg, Germany (c) 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 15 of 15 Rev. 03, 2014-03-07