FDG8842CZ - Fairchild - Datasheet.Directory

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April 2007

FDG8842CZ Complementary PowerTrench® MOSFET

FDG8842CZ Rev.B

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1

FDG8842CZ

Complementary PowerTrench® MOSFET

Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω

Features

Q1: N-Channel

Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A

Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A

Q2: P-Channel

Max rDS(on) = 1.1Ω at VGS = –4.5V, ID = –0.41A

Max rDS(on) = 1.5Ω at VGS = –2.7V, ID = –0.25A

Very low level gate drive requirements allowing direct

operation in 3V circuits(VGS(th) <1.5V)

Very small package outline SC70-6

RoHS Compliant

General Description

These N & P-Channel logic level enhancement mode field effect

transistors are produced using Fairchild’s proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance. This

device has been designed especially for low voltage applica-

tions as a replacement for bipolar digital transistors and small

signal MOSFETs. Since bias resistors are not required, this dual

digital FET can replace several different digital transistors, with

different bias resistor values.

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Q1 Q2 Units

VDS Drain to Source Voltage 30 –25 V

VGS Gate to Source Voltage ±12 –8 V

ID

Drain Current -Continuous 0.75 –0.41 A

-Pulsed 2.2 –1.2

PD

Power Dissipation for Single Operation (Note 1a)

(Note 1b)

0.36 W

0.30

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

RθJA Thermal Resistance, Junction to Ambient Single operation (Note 1a) 350 °C/W

RθJA Thermal Resistance, Junction to Ambient Single operation (Note 1b) 415

Device Marking Device Reel Size Tape Width Quantity

.42 FDG8842CZ 7” 8mm 3000 units

S1

G1

D2

D1

G2

S2

S1

S2

G2

D1

D2

G1

Pin 1

SC70-6

Q1

Q2

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2

FDG8842CZ Rev.B

Electrical Characteristics TJ = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BVDSS

Drain to Source Breakdown

Voltage

ID = 250μA, VGS = 0V

ID = –250μA, VGS = 0V

Q1

Q2

30

–25 V

ΔBVDSS

ΔTJ

Breakdown Voltage Temperature

Coefficient

ID = 250μA, referenced to 25°C

ID = –250μA, referenced to 25°C

Q1

Q2 25

–21 mV/°C

IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V

VDS = –20V, VGS = 0V

Q1

Q2

1

–1 μA

IGSS Gate to Source Leakage Current VGS = ±12V, VDS= 0V

VGS = –8V, VDS= 0V

Q1

Q2 ±10

–100

μA

nA

On Characteristics

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA

VGS = VDS, ID = –250μA

Q1

Q2

0.65

–0.65

1.0

–0.8

1.5

–1.5 V

ΔVGS(th)

ΔTJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 250μA, referenced to 25°C

ID = –250μA, referenced to 25°C

Q1

Q2

–3.0

1.8 mV/°C

rDS(on)

Static Drain to Source On

Resistance

VGS = 4.5V, ID = 0.75A

VGS = 2.7V, ID = 0.67A

VGS = 4.5V, ID = 0.75A ,TJ = 125°C

Q1

0.25

0.29

0.36

0.4

0.5

0.6 Ω

VGS = –4.5V, ID = –0.41A

VGS = –2.7V, ID = –0.25A

VGS = –4.5V, ID = –0.41A ,TJ = 125°C

Q2

0.87

1.20

1.22

1.1

1.5

1.9

gFS Forward Transconductance VDS = 5V, ID = 0.75A

VDS = –5V, ID = –0.41A

Q1

Q2

3

8S

Dynamic Characteristics

Ciss Input Capacitance Q1

VDS = 10V, VGS = 0V, f= 1MHZ

Q2

VDS = –10V, VGS = 0V, f= 1MHZ

Q1

Q2 90

70

120

100 pF

Coss Output Capacitance Q1

Q2

20

30

40 pF

Crss Reverse Transfer Capacitance Q1

Q2

15

25

25 pF

Switching Characteristics

td(on) Turn-On Delay Time Q1

VDD = 5V, ID = 0.5A,

VGS = 4.5V,RGEN = 6Ω

Q2

VDD = –5V, ID = –0.5A,

VGS = –4.5V,RGEN = 6Ω

Q1

Q2 4

6

10

12 ns

trRise Time Q1

Q2 1

16

10

29 ns

td(off) Turn-Off Delay Time Q1

Q2 9

35

18

56 ns

tfFall Time Q1

Q2 1

40

10

64 ns

QgTotal Gate Charge Q1

VGS =4.5V, VDD = 5V, ID = 0.75A

Q2

VGS = –4.5V, VDD = –5V, ID = –0.41A

Q1

Q2

1.03

1.20

1.44

1.68 nC

Qgs Gate to Source Charge Q1

Q2 0.29

0.31 nC

Qgd Gate to Drain “Miller” Charge Q1

Q2 0.17

0.22 nC

(note 2)

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3

FDG8842CZ Rev.B

Electrical Characteristics TJ = 25°C unless otherwise noted

Drain-Source Diode Characteristics and Maximum Ratings

Symbol Parameter Test Conditions Type Min Typ Max Units

ISMaximum Continuous Drain-Source Diode Forward Current Q1

Q2

0.3

–0.3 A

VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 0.3A (Note 2)

VGS = 0V, IS = –0.3A (Note 2)

Q1

Q2 0.76

–0.84

1.2

–1.2 V

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

RθJC is guaranteed by design while RθJA is determined by the user's board design.

2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.

a. 350°C/W when mounted on a

1 in2 pad of 2 oz copper . b. 415°C/W when mounted on a minimum pad

of 2 oz copper.

Scale 1:1 on letter size paper.

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FDG8842CZ Rev.B

Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted

Figure 1.

0.0 0.5 1.0 1.5 2.0

0.00

0.44

0.88

1.32

1.76

2.20

VGS = 1.5V

VGS = 2.0V

PULSE DURATION = 80μs

DUTY CYCLE = 0.5%MAX

VGS = 2.7V

VGS =1.8V

VGS = 4.5V

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics Figure 2.

0.00 0.44 0.88 1.32 1.76 2.20

0.6

1.0

1.4

1.8

2.2

2.6

VGS = 4.5V

PULSE DURATION = 80μs

DUTY CYCLE = 0.5%MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

ID, DRAIN CURRENT(A)

VGS = 2.7V

VGS = 2.0V

VGS = 1.8V

VGS = 3.5V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 0.75A

VGS = 4.5V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

TJ, JUNCTION TEMPERATURE (oC)

vs Junction Temperature

Figure 4.

12345

0.2

0.4

0.6

0.8

PULSE DURATION = 80μs

DUTY CYCLE = 0.5%MAX

TJ = 125oC

TJ = 25oC

ID =0.38A

rDS(on), DRAIN TO

SOURCE ON-RESISTANCE (Ω)

VGS, GATE TO SOURCE VOLTAGE (V)

O n -R es i s t an ce v s G a t e to

Source Voltage

Figure 5. Transfer Characteristics

0.0 0.5 1.0 1.5 2.0 2.5

0.00

0.44

0.88

1.32

1.76

2.20

PULSE DURATION = 80μs

DUTY CYCLE = 0.5%MAX

TJ = -55oC

TJ = 25oC

TJ = 150oC

ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

VDD = 5V

Figure 6.

0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

2

TJ = -55oC

TJ = 25oC

TJ = 150oC

VGS = 0V

IS, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

S ou r ce to D ra i n D io d e

Forward Voltage vs Source Current

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FDG8842CZ Complementary PowerTrench® MOSFET

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FDG8842CZ Rev.B

Figure 7.

0.00.20.40.60.81.01.21.4

0

1

2

3

4

5

VDD = 10V

VDD = 15V

VGS, GATE TO SOURCE VOLTAGE(V)

Qg, GATE CHARGE(nC)

VDD = 5V

ID = 0.22A

Gate Charge Characteristics Figure 8.

0.1 1 10

1

10

100

200

f = 1MHz

VGS = 0V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

30

C a p a c i t a n c e v s D r a i n

to Source Voltage

Figure 9.

0.1 1 10 100

0.01

0.1

1

0.005

4

100μs

1ms

1s

DC

100ms

10ms

SINGLE PULSE

TJ = MAX RATED

RθJA = 415OC/W

TA = 25OC

ID, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

rDS(on)

LIMITED

F or w ar d B i a s Sa f e

Operating Area

Figure 10.

0.0001 0.001 0.01 0.1 1 10 100 1000

0.1

1

10

RθJA = 415OC/W

SINGLE PULSE

TA = 25OC

50

P(PK), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (s)

Single Pulse Maximum Power

Dissipation

Figure 11. Transient Thermal Response Curve

0.0001 0.001 0.01 0.1 1 10 100 1000

0.01

0.1

1

RθJA = 415oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE, ZθJA

t, RECTANGULAR PULSE DURATION (s)

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

PDM

t1

t2

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJA x RθJA + TA

Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted

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FDG8842CZ Rev.B

Typical Characteristics (Q2 P-Channel)

01234

0.0

0.3

0.6

0.9

1.2

VGS = -2.0V

VGS = -4.5V

VGS = -2.7V

VGS = -1.5V

VGS = -2.5V

VGS = -3.5V

PULSE DURATION = 80μs

DUTY CYCLE = 0.5%MAX

-ID, DRAIN CURRENT (A)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 13. On Region Characteristics

0.0 0.3 0.6 0.9 1.2

0

1

2

3

4

5

VGS = -3.5V

VGS = -4.5V

VGS = -1.5V

VGS = -2.5V

VGS = -2.0V

VGS = -2.7V

PULSE DURATION = 80μs

DUTY CYCLE = 0.5%MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

-ID, DRAIN CURRENT(A)

Figure 14. Normalized on-Resistance vs Drain

Current and Gate Voltage

Figure 15. Normalized On Resistance

vs Junction Temperature

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = -0.41A

VGS = -4.5V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

TJ, JUNCTION TEMPERATURE (oC)

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

0

1

2

3

4

PULSE DURATION = 80μs

DUTY CYCLE = 0.5%MAX

TJ = 125oC

TJ = 25oC

ID =-0.22A

rDS(on), DRAIN TO

SOURCE ON-RESISTANCE (Ω)

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 16. On-Resistance vs Gate to

Source Voltage

Figure 17. Transfer Characteristics

0.5 1.0 1.5 2.0 2.5

0.0

0.2

0.4

0.6

PULSE DURATION = 80μs

DUTY CYCLE = 0.5%MAX

TJ = -55oC

TJ = 25oC

TJ = 150oC

-ID, DRAIN CURRENT (A)

-VGS, GATE TO SOURCE VOLTAGE (V)

VDS = -5V

Figure 18. Source to Drain Diode

Forward Voltage vs Source Current

0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

3

TJ = -55oC

TJ = 25oC

TJ = 150oC

VGS = 0V

-IS, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

TJ = 25°C unless otherwise noted

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Typical Characteristics(Q2 P-Channel) TJ = 25°C unless otherwise noted

Figure 19. Gate Charge Characteristics

0.0 0.4 0.8 1.2 1.6

0

1

2

3

4

5

VDD = -10V

VDD = -15V

-VGS, GATE TO SOURCE VOLTAGE(V)

Qg, GATE CHARGE(nC)

VDD = -5V

ID = -0.41A

0.1 1 10

1

10

100

200

f = 1MHz

VGS = 0V

CAPACITANCE (pF)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

25

Figure 20. Capacitance vs Drain

to Source Voltage

F i g u r e 2 1 . F o r w a r d B i a s S a f e

Operating Area

110

0.01

0.1

1

0.3 50

3

1ms

1s

DC

100ms

10ms

SINGLE PULSE

TJ = MAX RATED

RθJA = 415oC/W

TA = 25oC

-ID, DRAIN CURRENT (A)

-VDS, DRAIN to SOURCE VOLTAGE (V)

rDS(on)

LIMITED

Figure 22. Single Pulse Maximum Power

Dissipation

0.001 0.01 0.1 1 10 100 1000

0.1

1

10

P(PK), PEAK TRANSIENT POWER (W)

TA = 25OC

RθJA = 415OC/W

SINGLE PULSE

20

t, PULSE WIDTH (s)

Figure 23. Transient Thermal Response Curve

10-3 10-2 10-1 100101102103

0.01

0.1

1

RθJA = 415oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE, ZθJA

t, RECTANGULAR PULSE DURATION (s)

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

PDM

t1

t2

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJA x RθJA + TA

FDG8842CZ Complementary PowerTrench® MOSFET

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FDG8842CZ Rev.B

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FDG8842CZ Complementary PowerTrench® MOSFET

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intended to be an exhaustive list of all such trademarks.

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properly used in accordance with instructions for use provided in

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2. A critical component in any component of a life support,

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PRODUCT STATUS DEFINITIONS

Definition of Terms

ACEx®

Across the board. Around the world™

ActiveArray™

Bottomless™

Build it Now™

CoolFET™

CROSSVOLT™

CTL™

Current Transfer Logic™

DOME™

E2CMOS™

EcoSPARK®

EnSigna™

FACT Quiet Series™

FACT®

FAST®

FASTr™

FPS™

FRFET®

GlobalOptoisolator™

GTO™

i-Lo™

ImpliedDisconnect™

IntelliMAX™

ISOPLANAR™

MICROCOUPLER™

MicroPak™

MICROWIRE™

Motion-SPM™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC®

OPTOPLANAR®

PACMAN™

PDP-SPM™

POP™

Power220®

Power247®

PowerEdge™

PowerSaver™

Power-SPM™

PowerTrench®

Programmable Active Droop™

QFET®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

ScalarPump™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TCM™

The Power Franchise®

™

TinyBoost™

TinyBuck™

TinyLogic®

TINYOPTO™

TinyPower™

TinyWire™

TruTranslation™

µSerDes™

UHC®

UniFET™

VCX™

Wire™

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product

development. Specifications may change in any manner

without notice.

Preliminary First Production This datasheet contains preliminary data; supplementary data will

be published at a later date. Fairchild Semiconductor reserves the

right to make changes at any time without notice to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at any time

without notice to improve design.

Obsolete Not In Production This datasheet contains specifications on a product that has been

discontinued by Fairchild Semiconductor.The datasheet is printed

for reference information only.

Rev. I26

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