MCT2EM, TIL111M, TIL117M — 6-Pin General Purpose Phototransistor Optocouplers
Publication Order Number :
MCT2EM/D
©2005 Semiconductor Components Industries, LLC.
November-2017, Rev. 2
MCT2EM, TIL111M, TIL117M
6-Pin General Purpose Phototransistor Optocouplers
Features
• Minimum Current Transfer Ratio at IF = 10 mA,
VCE = 10 V:
– 20% for MCT2EM
– 50% for TIL117M
• Safety and Regulatory Approvals:
– UL1577, 4,170 VACRMS for 1 Minute
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
• Power Supply Regulators
• Digital Logic Inputs
• Microprocessor Inputs
Description
The general purpose optocouplers consist of a gallium
arsenide infrared emitting diode driving a silicon photo-
transistor in a standard plastic six-pin dual-in-line
package.
Schematic Package Outlines
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
2
1
3NC
5
6
4
Figure 2. Package Outlines
Figure 1. Schematic
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MCT2EM, TIL111M, TIL117M — 6-Pin General Purpose Phototransistor Optocouplers
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
Parameter Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
< 150 VRMS I–IV
< 300 VRMS I–IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak
VIORM Maximum Working Insulation Voltage 850 Vpeak
VIOTM Highest Allowable Over-Voltage 6000 Vpeak
External Creepage ≥ 7mm
External Clearance ≥ 7mm
External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm
DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm
TSCase Temperature(1) 175 °C
IS,INPUT Input Current(1) 350 mA
PS,OUTPUT Output Power(1) 800 mW
RIO Insulation Resistance at TS, VIO = 500 V(1) > 109Ω
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MCT2EM, TIL111M, TIL117M — 6-Pin General Purpose Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
Symbol Parameter Device Value Unit
TOTAL DEVICE
TSTG Storage Temperature All -40 to +125 °C
TOPR Operating Temperature All -40 to +100 °C
TJJunction Temperature All -40 to +125 ºC
TSOL Lead Solder Temperature All 260 for 10 seconds °C
PD
Total Device Power Dissipation @ TA = 25°C All 250 mW
Derate Above 25°C All 2.94 mW/°C
EMITTER
IFDC/Average Forward Input Current All 60 mA
VRReverse Input Voltage TIL111M 3 V
MCT2EM, TIL117M 6 V
IF(pk) Forward Current – Peak (300 µs, 2% Duty Cycle) All 3 A
PD
LED Power Dissipation @ TA = 25°C All 120 mW
Derate Above 25°C All 1.41 mW/°C
DETECTOR
VCEO Collector-to-Emitter Voltage All 30 V
VCBO Collector-to-Base Voltage All 70 V
VECO Emitter-to-Collector Voltage All 7 V
VEBO Emitter-to-Base Voltage All 7 V
PD
Detector Power Dissipation @ TA = 25°C All 150 mW
Derate Above 25°C All 1.76 mW/°C
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MCT2EM, TIL111M, TIL117M — 6-Pin General Purpose Phototransistor Optocouplers
Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristics
Transfer Charac teristics
Isolation Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
VFInput Forward Voltage IF = 10 mA 1.18 1.50 V
IRReverse Leakage Current VR = 6.0 V 0.001 10 µA
DETECTOR
BVCEO Collector-to-Emitter Breakdown Voltage IC = 1.0 mA, IF = 0 30 100 V
BVCBO Collector-to-Base Breakdown Voltage IC = 100 µA, IF = 0 70 120 V
BVEBO Emitter-to-Base Breakdown Voltage IE = 10 uA, IF = 0 7 10 V
BVECO Emitter-to-Collector Breakdown Voltage IE = 100 µA, IF = 0 7 10 V
ICEO Collector-to-Emitter Dark Current VCE = 10 V, IF = 0 1 50 nA
ICBO Collector-to-Base Dark Current VCB = 10 V 20 nA
CCE Capacitance VCE = 0 V, f = 1 MHz 8 pF
Symbol Parameter Test Conditions Device Min. Typ. Max. Unit
DC CHARACTERISTICS
CTR Current Transfer Ratio,
Collector-to-Emitter IF = 10 mA, VCE = 10 V MCT2EM 20 %
TIL117M 50 %
VCE (SAT) Collector-to-Emitter
Saturation Voltage
IC = 2 mA, IF = 16 mA MCT2EM, TIL111M 0.4 V
IC = 0.5 mA, IF = 10 mA TIL117M 0.4 V
AC CHARACTERISTICS
TON Non-Saturated
Turn-on Time
IF = 10 mA, VCC = 10 V,
RL = 100 Ω (Figure 13) MCT2EM 2 µs
IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 13) TIL117M 2 10 µs
TOFF Turn-off Time
IF = 10 mA, VCC = 10 V,
RL = 100 Ω (Figure 13) MCT2EM 2 µs
IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 13) TIL117M 2 10 µs
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
VISO Input-Output Isolation Voltage t = 1 Minute 4170 VACRMS
CISO Isolation Capacitance VI-O = 0 V, f = 1 MHz 0.2 pF
RISO Isolation Resistance VI-O = ±500 VDC, TA = 25°C 1011 Ω
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MCT2EM, TIL111M, TIL117M — 6-Pin General Purpose Phototransistor Optocouplers
Typical Performance Curves
Figure 4. Normalized CTR vs. Forward Current
6 8 10 12 14
I
F
- FORWARD CURRENT (mA)
024 618102
NORMALIZED CTR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCE = 5.0 V
TA = 25°C
Normalized to
IF = 10 mA
Figure 5. Normalized CTR vs. Ambient Temperature
-200 204060
T
A
- AMBIENT TEMPERATURE (°C)
-60 -40 80 100
NORMALIZED CTR
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IF = 5 mA
IF = 10 mA
IF = 20 mA
Normalized to
IF = 10 mA
TA = 25°C
10
I
F
- LED FORWARD CURRENT (mA)
V
F
- FORWARD VOLTAGE (V)
Figure 3. LED Forward Voltage vs. Forward Current
1 100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
TA = 25°C
TA = -55°C
TA = 100°C
Figure 7. CTR vs. RBE (Saturated)
100
R
BE
- BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
10 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IF = 20 mA
IF = 10 mA
IF = 5 mA
VCE= 0.3 V
Figure 6. CTR vs. RBE (Unsaturated)
100
R
BE
- BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
10 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VCE = 5.0 V
IF = 20 mA
IF = 10 mA
IF = 5 mA
0.01 10
0.001
0.01
0.1
1
10
100
I
F
= 5 mA
I
F
= 20 mA
I
F
= 10 mA
Figure 8. Collector-Emitter Saturation Voltage
vs. Collector Current
0.1 1
I
C
- COLLECTOR CURRENT (mA)
VCE (SAT) - COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
I
F
= 2.5 mA
T
A
= 25˚C
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MCT2EM, TIL111M, TIL117M — 6-Pin General Purpose Phototransistor Optocouplers
Typical Performance Curves (Continued)
Switching Time Test Circuit and Waveforms
Figure 13. Switching Time Test Circuit and Waveforms
NORMALIZED ton - (ton(R
BE
) / ton(open))
RBE - BASE RESISTANCE (kΩ)
Figure 10. Normalized ton vs. RBE
10 100 1000 10000 100000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCC = 10 V
IC = 2 mA
RL = 100 Ω
SWITCHING SPEED - (μs)
Figure 9. Switching Speed vs. Load Resistor
110
R - LOAD RESISTOR (kΩ)
0.1 100
0.1
1
10
100
1000
Toff
IF = 10 mA
VCC = 10 V
TA = 25°C
Tr
Ton
Tf
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VCC = 10 V
IC = 2 mA
RL = 100 Ω
NORMALIZED toff - (toff(R
BE
) / toff(open))
10 100 1000 10000 100000
RBE - BASE RESISTANCE (kΩ)
Figure 11. Normalized toff vs. RBE Figure 12. Dark Current vs. Ambient Temperature
40 60
TA - AMBIENT TEMPERATURE
(°C)
0 20 80 100
I
CEO
- COLLECTOR -EMITTER DARK CURRENT (nA)
0.001
0.01
0.1
1
10
100
1000
10000
V
CE
= 10 V
T
A
= 25°
C
OUTPUT PULSE
INPUT PULSE
trtf
INPUT
IF RL
RBE
VCC = 10 V
OUTPUT
ton
10%
90%
toff
IC
Adjust IF to produce IC = 2 mA
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MCT2EM, TIL111M, TIL117M — 6-Pin General Purpose Phototransistor Optocouplers
Reflow Profile
Figure 14. Reflow Prof ile
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
> 24 °C = 42 s
Time above
183°C = 90 s
360
1.822°C/s Ramp-up rate
33 s
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MCT2EM, TIL111M, TIL117M — 6-Pin General Purpose Phototransistor Optocouplers
Ordering Information
Note:
2. The product orderable part number system listed in this table also applies to the TIL111M and TIL117M devices.
Marking Information
Figure 15. Top Mark
Table 1. Top Mark Definitions
Part Number Package Packing Method
MCT2EM DIP 6-Pin Tube (50 Units)
MCT2ESM SMT 6-Pin (Lead Bend) Tube (50 Units)
MCT2ESR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units)
MCT2EVM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units)
MCT2ESVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units)
MCT2ESR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units)
MCT2ETVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units)
1ON Semiconductor Logo
2 Device Number
3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
4 One-Digit Year Code, e.g., “6”
5 Digit Work Week, Ranging from “01” to “53”
6 Assembly Package Code
MCT2E
V X YY Q
1
2
6
43 5
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