PRELIMINARY S25FS064S 64 Mbit (8 Mbyte), 1.8-V FS-S Flash Features Serial Peripheral Interface (SPI) with Multi-I/O - SPI Clock polarity and phase modes 0 and 3 - Double Data Rate (DDR) option - Extended Addressing - 24 or 32-bit address options - Serial Command subset and footprint compatible with S25FL1-K, S25FL-P and S25FL-S SPI families - Multi I/O Command subset and footprint compatible with S25FL1-K S25FL-P and S25FL-S SPI families - 20 Year Data Retention, minimum Security Features - One Time Program (OTP) array of 1024 bytes - Block Protection: - Status Register bits to control protection against program or erase of a contiguous range of sectors. - Hardware and software control options - Advanced Sector Protection (ASP) - Individual sector protection controlled by boot code or password - Option for password control of read access Read - Commands: Normal, Fast, Dual Output, Dual I/O, Quad Output, Quad I/O, DDR Quad I/O - Modes: Burst Wrap, Continuous (XIP), QPI (QPI) - Serial Flash Discoverable Parameters (SFDP) and Common Flash Interface (CFI), for configuration information. Technology - Cypress 65 nm MirrorBit(R) Technology with Eclipse Architecture Program - 256 or 512 Bytes Page Programming buffer - Program suspend and resume - Automatic ECC -internal hardware Error Correction Code generation with single bit error correction Temperature Range - Industrial (40C to +85C) - Industrial Plus (40C to +105C) - Extended (40C to +125C) Erase - Hybrid sector option - Physical set of eight 4KB sectors and one 32KB sector at the top or bottom of address space with all remaining sectors of 64KB - Uniform sector option Single Supply Voltage with CMOS I/O - 1.7V to 2.0V Packages (all Pb-free) - 8-lead SOIC 208 mil (SOC008) - LGA 5x6 mm (W9A008) - BGA-24 6 8 mm - 5 5 ball (FAB024) footprint - Uniform 64KB or 256KB blocks for software compatibility with higher density and future devices - Erase suspend and resume - Erase status evaluation - 100,000 Program-Erase Cycles on any sector, minimum Logic Block Diagram CS# X Decoders SRAM SCK SI/IO0 SO/IO1 MirrorBit Array Y Decoders I/O Data Latch WP#/IO2 Control Logic RESET#/IO3 Data Path RESET# Cypress Semiconductor Corporation Document Number: 002-03631 Rev. *C * 198 Champion Court * San Jose, CA 95134-1709 * 408-943-2600 Revised June 24, 2016 PRELIMINARY S25FS064S Performance Summary Maximum Read Rates Command Clock Rate (MHz) MB/s Read 50 6.25 Fast Read 133 16.5 Dual Read 133 33 Quad Read 133 66 DDR Quad I/O Read 80 80 Typical Program and Erase Rates Operation KB/s Page Programming (256 Bytes page buffer) 711 Page Programming (512 Bytes page buffer) 1077 4 KBytes Physical Sector Erase (Hybrid Sector Option) 16 64 KBytes Sector Erase 355 256 KBytes Sector Erase 355 Typical Current Consumption, 40C to +85C Operation Current (mA) Serial Read 50 MHz 10 Serial Read 133 MHz 25 Quad Read 133 MHz 60 Quad DDR Read 80 MHz 70 Program 60 Erase 60 Standby 0.025 Deep Power Down 0.006 Document Number: 002-03631 Rev. *C Page 2 of 147 PRELIMINARY S25FS064S Contents 1. 1.1 1.2 1.3 Overview ....................................................................... General Description ....................................................... Migration Notes.............................................................. Other Resources............................................................ 4 4 4 6 Hardware Interface 2. Serial Peripheral Interface with Multiple Input / Output (SPI-MIO)................................ 7 3. 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 3.10 3.11 3.12 3.13 3.14 3.15 Signal Descriptions ..................................................... 7 Input/Output Summary................................................... 7 Multiple Input / Output (MIO).......................................... 8 Serial Clock (SCK) ......................................................... 8 Chip Select (CS#) .......................................................... 8 Serial Input (SI) / IO0 ..................................................... 8 Serial Output (SO) / IO1................................................. 8 Write Protect (WP#) / IO2 .............................................. 8 IO3_RESET# ................................................................. 9 RESET# ......................................................................... 9 Voltage Supply (VDD)..................................................... 9 Supply and Signal Ground (VSS) ................................... 9 Not Connected (NC) .................................................... 10 Reserved for Future Use (RFU)................................... 10 Do Not Use (DNU) ....................................................... 10 System Block Diagrams............................................... 10 4. 4.1 4.2 4.3 4.4 4.5 Signal Protocols......................................................... SPI Clock Modes ......................................................... Command Protocol ...................................................... Interface States............................................................ Configuration Register Effects on the Interface ........... Data Protection ............................................................ 12 12 13 17 21 21 5. 5.1 5.2 5.3 5.4 5.5 5.6 Electrical Specifications............................................ Absolute Maximum Ratings ......................................... Latchup Characteristics ............................................... Thermal Resistance ..................................................... Operating Ranges........................................................ Power-Up and Power-Down ........................................ DC Characteristics ....................................................... 22 22 22 22 22 23 25 6. 6.1 6.2 6.3 6.4 6.5 Timing Specifications ................................................ Key to Switching Waveforms ....................................... AC Test Conditions ...................................................... Reset............................................................................ SDR AC Characteristics............................................... DDR AC Characteristics .............................................. 28 28 28 29 32 35 7. Embedded Algorithm Performance Tables ............. 38 Document Number: 002-03631 Rev. *C 8. 8.1 8.2 Physical Interface ....................................................... 39 Connection Diagrams ................................................... 39 Physical Diagrams ........................................................ 41 Software Interface 9.5 9.6 Address Space Maps .................................................. 44 Overview....................................................................... 44 Flash Memory Array...................................................... 44 ID-CFI Address Space .................................................. 46 JEDEC JESD216 Serial Flash Discoverable Parameters (SFDP) Space. .................... 46 OTP Address Space ..................................................... 47 Registers....................................................................... 48 10. 10.1 10.2 10.3 10.4 10.5 Data Protection ........................................................... 64 Secure Silicon Region (OTP)........................................ 64 Write Enable Command................................................ 65 Block Protection ............................................................ 65 Advanced Sector Protection ......................................... 67 Recommended Protection Process ............................. 72 9. 9.1 9.2 9.3 9.4 11. Commands .................................................................. 73 11.1 Command Set Summary............................................... 74 11.2 Identification Commands .............................................. 80 11.3 Register Access Commands......................................... 83 11.4 Read Memory Array Commands .................................. 95 11.5 Program Flash Array Commands ............................... 103 11.6 Erase Flash Array Commands.................................... 106 11.7 One Time Program Array Commands ........................ 113 11.8 Advanced Sector Protection Commands .................... 113 11.9 Reset Commands ....................................................... 120 11.10DPD Commands......................................................... 121 12. Data Integrity ............................................................. 123 12.1 Endurance .................................................................. 123 12.2 Data Retention ............................................................ 123 13. Software Interface Reference .................................. 124 13.1 OTP Memory Space Address Map ............................. 124 13.2 Device ID and Common Flash Interface (ID-CFI) Address Map -- Standard............................. 124 13.3 Serial Flash Discoverable Parameters (SFDP) Address Map.................................................. 130 13.4 Initial Delivery State .................................................... 142 14. Ordering Part Number .............................................. 143 15. Glossary .................................................................... 144 16. Document History Page ........................................... 145 Page 3 of 147 PRELIMINARY S25FS064S 1. Overview 1.1 General Description The Cypress FS-S Family of devices are Flash non-volatile memory products using: MirrorBit technology - that stores two data bits in each memory array transistor Eclipse architecture - that dramatically improves program and erase performance 65 nm process lithography The FS-S Family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit wide Quad I/O (QIO) and Quad Peripheral Interface (QPI) commands. In addition, there are Double Data Rate (DDR) read commands for QIO and QPI that transfer address and read data on both edges of the clock. The FS-S Eclipse architecture features a Page Programming Buffer that allows up to 512 bytes to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Executing code directly from Flash memory is often called Execute-In-Place or XIP. By using FS-S Family devices at the higher clock rates supported, with Quad or DDR-Quad commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR Flash memories, while reducing signal count dramatically. The FS-S Family products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. They are an excellent solution for systems with limited space, signal connections, and power. They are ideal for code shadowing to RAM, executing code directly (XIP), and storing reprogrammable data. 1.2 Migration Notes 1.2.1 Features Comparison The FS-S Family is command subset and footprint compatible with prior generation FL-S, and FL-P families. However, the power supply and interface voltages are nominal 1.8V. Table 1.1 Cypress SPI Families Comparison Parameter FS-S FS-S FL-S FL-P Technology Node 65nm 65nm 65nm 90nm Architecture MirrorBit(R) EclipseTM MirrorBit(R) EclipseTM MirrorBit(R) EclipseTM MirrorBit(R) Release Date In Production 2H2015 In Production In Production 32Mb - 256Mb Density 128Mb, 256Mb 512MB 64Mb 128Mb 256Mb 512Mb Bus Width x1, x2, x4 x1, x2, x4 x1, x2, x4 x1, x2, x4 Supply Voltage 1.7V - 2.0V 1.7V - 2.0V 2.7V - 3.6V / 1.65V - 3.6V VIO 2.7V - 3.6V Normal Read Speed (SDR) 6MB/s (50MHz) 6MB/s (50MHz) 6MB/s (50MHz) 5MB/s (40MHz) 13MB/s (104MHz) Fast Read Speed (SDR) 16.5MB/s (133MHz) 16.5MB/s (133MHz) 16.5MB/s (133MHz) Dual Read Speed (SDR) 33MB/s (133MHz) 33MB/s (133MHz) 26MB/s (104MHz) 20MB/s (80MHz) Quad Read Speed (SDR) 66MB/s (133MHz) 66MB/s (133MHz) 52MB/s (104MHz) 40MB/s (80MHz) Quad Read Speed (DDR) 80MB/s (80 MHz) 80Mb/s(80Mhz ) 66MB/s (66MHz) - Program Buffer Size 256B / 512B 256B / 512B 256B / 512B 256B Erase Sector Size 64KB / 256KB 64KB / 256KB 64KB / 256KB 64KB / 256KB Parameter Sector Size 4KB (option) 4KB (option) 4KB (option) 4KB Sector Erase Rate (typ.) 500 KB/s 500 KB/s 500 KB/s 130 KB/s Page Programming Rate (typ.) 1.0 MB/s (256B) 1.2 MB/s (512B) 1.0 MB/s (256B) 1.2 MB/s (512B) 1.2 MB/s (256B) 1.5 MB/s (512B) 170 KB/s OTP 1024B 1024B 1024B 506B Advanced Sector Protection Yes Yes Yes No Document Number: 002-03631 Rev. *C Page 4 of 147 PRELIMINARY S25FS064S Table 1.1 Cypress SPI Families Comparison (Continued) Parameter FS-S FS-S FL-S Auto Boot Mode No No Yes No Erase Suspend/Resume Yes Yes Yes No Program Suspend/Resume Yes Yes Yes No -40 C to +85 C / +105 C -40 C to +85 C / +105 C / +125 C -40 C to +85 C / +105 C -40 C to +85 C/+105 C Operating Temperature FL-P Notes: - FL-P column indicates FL129P MIO SPI device (for 128Mb density), FL128P does not support MIO, OTP, or 4KB sectors - 64KB sector erase option only for 128Mb/256Mb density FL-P, FL-S and FS-S devices - Refer to individual data sheets for further details 1.2.2 1.2.2.1 Known Differences from Prior Generations Error Reporting FL-K and FL-P memories either do not have error status bits or do not set them if program or erase is attempted on a protected sector. The FS-S and FL-S families do have error reporting status bits for program and erase operations. These can be set when there is an internal failure to program or erase, or when there is an attempt to program or erase a protected sector. In these cases the program or erase operation did not complete as requested by the command. The P_ERR or E_ERR bits and the WIP bit will be set to and remain 1 in SR1V. The clear status register command must be sent to clear the errors and return the device to standby state. 1.2.2.2 Secure Silicon Region (OTP) The FS-S size and format (address map) of the One Time Program area is different from FL-K and FL-P generations. The method for protecting each portion of the OTP area is different. For additional details see Secure Silicon Region (OTP) on page 64. 1.2.2.3 Configuration Register Freeze Bit The configuration register-1 Freeze Bit CR1V[0], locks the state of the Block Protection bits (SR1NV[4:2] and SR1V[4:2]), TBPARM_O bit (CR1NV[2]), and TBPROT_O bit (CR1NV[5]), as in prior generations. In the FS-S and FL-S families the Freeze Bit also locks the state of the configuration register-1 BPNV_O bit (CR1NV[3]), and the Secure Silicon Region (OTP) area. 1.2.2.4 Sector Erase Commands The command for erasing a 4KBytes sector is supported only for use on 4KBytes parameter sectors at the top or bottom of the FS-S device address space. The command for erasing an 8KByte area (two 4KBytes sectors) is not supported. The command for erasing a 32KByte area (eight 4KBytes sectors) is not supported. The sector erase command (SE) for FS-S 64KBytes sectors is supported when the configuration option for uniform 64KBytes sector is selected or, when the hybrid configuration option for 4KBytes parameter sectors with 64KBytes uniform sectors is used. When the hybrid option is in use, the 64KBytes erase command may be used to erase the 32KBytes of address space adjacent to the group of eight 4KBytes sectors. The 64KBytes erase command in this case is erasing the 64KBytes sector that is partially overlaid by the group of eight 4KBytes sectors without affecting the 4KBytes sectors. This provides erase control over the 32KBytes of address space without also forcing the erase of the 4KBytes sectors. This is different behavior than implemented in the FL-S family. In the FL-S family, the 64KBytes sector erase command can be applied to a 64KBytes block of 4KBytes sectors to erase the entire block of parameter sectors in a single operation. In the FS-S, the parameter sectors do not fill an entire 64KBytes block so only the 4KBytes parameter sector erase (20h) is used to erase parameter sectors. The erase command for a 256KBytes sector replaces the 64KBytes erase command when the configuration option for 256 KBytes uniform logical sectors is used. Document Number: 002-03631 Rev. *C Page 5 of 147 PRELIMINARY 1.2.2.5 S25FS064S Deep Power Down A Deep Power Down (DPD) function is supported in the FS-S family devices. 1.2.2.6 WRR Single Register Write In some legacy SPI devices, a Write Registers (WRR) command with only one data byte would update Status Register 1 and clear some bits in Configuration Register 1, including the Quad mode bit. This could result in unintended exit from Quad mode. The FS-S Family only updates Status Register 1 when a single data byte is provided. The Configuration Register 1 is not modified in this case. 1.2.2.7 Hold Input Not Supported In some legacy SPI devices, the IO3 input has an alternate function as a HOLD# input used to pause information transfer without stopping the serial clock. This function is not supported in the FS-S family. 1.2.2.8 Other Legacy Commands Not Supported DDR Fast Read DDR Dual I/O Read 1.2.2.9 New Features The FS-S family introduces new features to Cypress SPI category memories: Single 1.8V power supply for core and I/O voltage. Configurable initial read latency (number of dummy cycles) for faster initial access time or higher clock rate read commands QPI (QPI, 4-4-4) read mode in which all transfers are 4 bits wide, including instructions JEDEC JESD216 Rev B standard, Serial Flash Discoverable Parameters (SFDP) that provide device feature and configuration information. Evaluate Erase Status command to determine if the last erase operation on a sector completed successfully. This command can be used to detect incomplete erase due to power loss or other causes. This command can be helpful to Flash File System software in file system recovery after a power loss. Advanced Sector Protection (ASP) Permanent Protection. Also, when one of the two ASP protection modes is selected, all OTP configuration bits in all registers are protected from further programming so that all OTP configuration settings are made permanent. The OTP address space is not protected by the selection of an ASP protection mode. The Freeze bit (CR1V[0]) may be used to protect the OTP Address Space. 1.3 Other Resources 1.3.1 Link to Cypress Flash Roadmap www.cypress.com/Flash-Roadmap 1.3.2 Link to Software www.cypress.com/spansionsupport 1.3.3 Link to Application Notes www.cypress.com/spansionappnotes Document Number: 002-03631 Rev. *C Page 6 of 147 PRELIMINARY S25FS064S Hardware Interface 2. Serial Peripheral Interface with Multiple Input / Output (SPI-MIO) Many memory devices connect to their host system with separate parallel control, address, and data signals that require a large number of signal connections and larger package size. The large number of connections increase power consumption due to so many signals switching and the larger package increases cost. The FS-S Family reduces the number of signals for connection to the host system by serially transferring all control, address, and data information over 6 signals. This reduces the cost of the memory package, reduces signal switching power, and either reduces the host connection count or frees host connectors for use in providing other features. The FS-S Family uses the industry standard single bit Serial Peripheral Interface (SPI) and also supports optional extension commands for two bit (Dual) and four bit (Quad) wide serial transfers. This multiple width interface is called SPI Multi-I/O or SPI-MIO. 3. Signal Descriptions 3.1 Input/Output Summary Table 3.1 Signal List Signal Name Type Description RESET# Input Hardware Reset: Low = device resets and returns to standby state, ready to receive a command. The signal has an internal pull-up resistor and may be left unconnected in the host system if not used. SCK Input Serial Clock CS# Input Chip Select SI / IO0 I/O Serial Input for single bit data commands or IO0 for Dual or Quad commands. SO / IO1 I/O Serial Output for single bit data commands. IO1 for Dual or Quad commands. Write Protect when not in Quad mode (CR1V[1] = 0 and SR1NV[7] = 1). IO2 when in Quad mode (CR1V[1] = 1). WP# / IO2 I/O The signal has an internal pull-up resistor and may be left unconnected in the host system if not used for Quad commands or write protection. If write protection is enabled by SR1NV[7] = 1 and CR1V[1] = 0, the host system is required to drive WP# high or low during a WRR or WRAR command. IO3 in Quad-I/O mode, when Configuration Register-1 QUAD bit, CR1V[1] =1, and CS# is low. IO3_RESET# I/O RESET# when enabled by CR2V[5]=1 and not in Quad-I/O mode, CR1V[1] = 0, or when enabled in quad mode, CR1V[1] = 1 and CS# is high. The signal has an internal pull-up resistor and may be left unconnected in the host system if not used for Quad commands or RESET#. VDD Supply Power Supply. VSS Supply Ground. NC Unused Not Connected. No device internal signal is connected to the package connector nor is there any future plan to use the connector for a signal. The connection may safely be used for routing space for a signal on a Printed Circuit Board (PCB). However, any signal connected to an NC must not have voltage levels higher than VDD. RFU Reserved Reserved for Future Use. No device internal signal is currently connected to the package connector but there is potential future use of the connector for a signal. It is recommended to not use RFU connectors for PCB routing channels so that the PCB may take advantage of future enhanced features in compatible footprint devices. Reserved Do Not Use. A device internal signal may be connected to the package connector. The connection may be used by Cypress for test or other purposes and is not intended for connection to any host system signal. Any DNU signal related function will be inactive when the signal is at VIL. The signal has an internal pull-down resistor and may be left unconnected in the host system or may be tied to VSS. Do not use these connections for PCB signal routing channels. Do not connect any host system signal to this connection. DNU Note: 1. Inputs with internal pull-ups or pull-downs internally drive less than 2uA. Only during power-up is the current larger at 150uA for 4uS. Document Number: 002-03631 Rev. *C Page 7 of 147 PRELIMINARY 3.2 S25FS064S Multiple Input / Output (MIO) Traditional SPI single bit wide commands (Single or SIO) send information from the host to the memory only on the Serial Input (SI) signal. Data may be sent back to the host serially on the Serial Output (SO) signal. Dual or Quad Input / Output (I/O) commands send instructions to the memory only on the SI/IO0 signal. Address or data is sent from the host to the memory as bit pairs on IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as bit pairs on IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3. QPI mode transfers all instructions, address, and data from the host to the memory as four bit (nibble) groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as four bit (nibble) groups on IO0, IO1, IO2, and IO3. 3.3 Serial Clock (SCK) This input signal provides the synchronization reference for the SPI interface. Instructions, addresses, or data input are latched on the rising edge of the SCK signal. Data output changes after the falling edge of SCK, in SDR commands, and after every edge in DDR commands. 3.4 Chip Select (CS#) The chip select signal indicates when a command is transferring information to or from the device and the other signals are relevant for the memory device. When the CS# signal is at the logic high state, the device is not selected and all input signals except the Reset# and IO3_Reset# are ignored and all output signals are high impedance. The device will be in the Standby Power mode, unless an internal embedded operation is in progress. An embedded operation is indicated by the Status Register-1 Write-In-Progress bit (SR1V[1]) set to 1, until the operation is completed. Some example embedded operations are: Program, Erase, or Write Registers (WRR) operations. Driving the CS# input to the logic low state enables the device, placing it in the Active Power mode. After Power-up, a falling edge on CS# is required prior to the start of any command. 3.5 Serial Input (SI) / IO0 This input signal is used to transfer data serially into the device. It receives instructions, addresses, and data to be programmed. Values are latched on the rising edge of serial SCK clock signal. SI becomes IO0 - an input and output during Dual and Quad commands for receiving instructions, addresses, and data to be programmed (values latched on rising edge of serial SCK clock signal) as well as shifting out data (on the falling edge of SCK, in SDR commands, and on every edge of SCK, in DDR commands). 3.6 Serial Output (SO) / IO1 This output signal is used to transfer data serially out of the device. Data is shifted out on the falling edge of the serial SCK clock signal. SO becomes IO1 - an input and output during Dual and Quad commands for receiving addresses, and data to be programmed (values latched on rising edge of serial SCK clock signal) as well as shifting out data (on the falling edge of SCK, in SDR commands, and on every edge of SCK, in DDR commands). 3.7 Write Protect (WP#) / IO2 When WP# is driven Low (VIL), during a WRR or WRAR command and while the Status Register Write Disable (SRWD_NV) bit of Status Register-1 (SR1NV[7]) is set to a 1, it is not possible to write to Status Register-1 or Configuration Register-1 related registers. In this situation, a WRR command is ignored, a WRAR command selecting SR1NV, SR1V, CR1NV, or CR1V is ignored, and no error is set. This prevents any alteration of the Block Protection settings. As a consequence, all the data bytes in the memory area that are protected by the Block Protection feature are also hardware protected against data modification if WP# is Low during a WRR or WRAR command with SRWD_NV set to 1. Document Number: 002-03631 Rev. *C Page 8 of 147 PRELIMINARY S25FS064S The WP# function is not available when the Quad mode is enabled (CR1V[1]=1). The WP# function is replaced by IO2 for input and output during Quad mode for receiving addresses, and data to be programmed (values are latched on rising edge of the SCK signal) as well as shifting out data (on the falling edge of SCK, in SDR commands, and on every edge of SCK, in DDR commands). WP# has an internal pull-up resistance; when unconnected, WP# is at VIH and may be left unconnected in the host system if not used for Quad mode or protection. 3.8 IO3_RESET# IO3 is used for input and output during Quad mode (CR1V[1]=1) for receiving addresses, and data to be programmed (values are latched on rising edge of the SCK signal) as well as shifting out data (on the falling edge of SCK, in SDR commands, and on every edge of SCK, in DDR commands). The IO3_RESET# signal may also be used to initiate the hardware reset function when the reset feature is enabled by writing Configuration Register-2 non-volatile bit 5 (CR2V[5]=1). The input is only treated as RESET# when the device is not in Quad-I/O mode, CR1V[1] = 0, or when CS# is high. When Quad I/O mode is in use, CR1V[1]=1, and the device is selected with CS# low, the IO3_RESET# is used only as IO3 for information transfer. When CS# is high, the IO3_RESET# is not in use for information transfer and is used as the RESET# input. By conditioning the reset operation on CS# high during Quad mode, the reset function remains available during Quad mode. When the system enters a reset condition, the CS# signal must be driven high as part of the reset process and the IO3_RESET# signal is driven low. When CS# goes high the IO3_RESET# input transitions from being IO3 to being the RESET# input. The reset condition is then detected when CS# remains high and the IO3_RESET# signal remains low for tRP. If a reset is not intended, the system is required to actively drive IO3_RESET# to high along with CS# being driven high at the end of a transfer of data to the memory. Following transfers of data to the host system, the memory will drive IO3 high during tCS. This will ensure that IO3 / Reset is not left floating or being pulled slowly to high by the internal or an external passive pull-up. Thus, an unintended reset is not triggered by the IO3_RESET# not being recognized as high before the end of tRP. The IO3_RESET# signal is unused when the reset feature is disabled (CR2V[5]=0). The IO3_RESET# signal has an internal pull-up resistor and may be left unconnected in the host system if not used for Quad mode or the reset function. The internal pull-up will hold IO3_RESET# high after the host system has actively driven the signal high and then stops driving the signal. Note that IO3_RESET# cannot be shared by more than one SPI-MIO memory if any of them are operating in Quad I/O mode as IO3 being driven to or from one selected memory may look like a reset signal to a second non-selected memory sharing the same IO3_RESET# signal. 3.9 RESET# The RESET# input provides a hardware method of resetting the device to standby state, ready for receiving a command. When RESET# is driven to logic low (VIL) for at least a period of tRP, the device starts the hardware reset process. The RESET# input initiates the reset operation when transitions from VIH to VIL for > tRP, the device will reset register states in the same manner as power-on reset but, does not go through the full reset process that is performed during POR. The hardware reset process requires a period of tRPH to complete.RESET# may be asserted low at any time. RESET# has an internal pull-up resistor and may be left unconnected in the host system if not used. The internal pull-up will hold Reset high after the host system has actively driven the signal high and then stops driving the signal. The RESET# input is not available on all packages options. When not available the RESET# input of the device is tied to the inactive state. When using the RESET# and not in QIO or QPI mode, do not use the IO3/RESET# pin. 3.10 Voltage Supply (VDD) VDD is the voltage source for all device internal logic. It is the single voltage used for all device internal functions including read, program, and erase. 3.11 Supply and Signal Ground (VSS) VSS is the common voltage drain and ground reference for the device core, input signal receivers, and output drivers. Document Number: 002-03631 Rev. *C Page 9 of 147 PRELIMINARY 3.12 S25FS064S Not Connected (NC) No device internal signal is connected to the package connector nor is there any future plan to use the connector for a signal. The connection may safely be used for routing space for a signal on a Printed Circuit Board (PCB). 3.13 Reserved for Future Use (RFU) No device internal signal is currently connected to the package connector but there is potential future use of the connector. It is recommended to not use RFU connectors for PCB routing channels so that the PCB may take advantage of future enhanced features in compatible footprint devices. 3.14 Do Not Use (DNU) A device internal signal may be connected to the package connector. The connection may be used by Cypress for test or other purposes and is not intended for connection to any host system signal. Any DNU signal related function will be inactive when the signal is at VIL. The signal has an internal pull-down resistor and may be left unconnected in the host system or may be tied to VSS. Do not use these connections for PCB signal routing channels. Do not connect any host system signal to these connections. 3.15 System Block Diagrams Figure 3.1 Bus Master and Memory Devices on the SPI Bus - Single Bit Data Path RESET# WP# RESET# WP# SI SO SCK SI SO SCK CS2# CS1# CS# CS# SPI Bus Master SPI Flash SPI Flash Figure 3.2 Bus Master and Memory Devices on the SPI Bus - Dual Bit Data Path RESET# WP# RESET# WP# IO1 IO0 SCK IO1 IO0 SCK CS2# CS1# SPI Bus Master Document Number: 002-03631 Rev. *C CS# CS# SPI Flash SPI Flash Page 10 of 147 PRELIMINARY S25FS064S Figure 3.3 Bus Master and Memory Devices on the SPI Bus - Quad Bit Data Path - Separate RESET# RESET# IO3 IO2 IO1 IO0 SCK RESET# IO3 IO2 IO1 IO0 SCK CS2# CS1# CS# CS# SPI Bus Master SPI Flash SPI Flash Figure 3.4 Bus Master and Memory Devices on the SPI Bus - Quad Bit Data Path - I/O3_RESET# IO3 / RESET# IO2 IO1 IO0 SCK CS# SPI Bus Master Document Number: 002-03631 Rev. *C IO3_RESET# IO2 IO1 IO0 SCK CS# SPI Flash Page 11 of 147 PRELIMINARY 4. S25FS064S Signal Protocols 4.1 SPI Clock Modes 4.1.1 Single Data Rate (SDR) The FS-S Family can be driven by an embedded microcontroller (bus master) in either of the two following clocking modes. Mode 0 with Clock Polarity (CPOL) = 0 and, Clock Phase (CPHA) = 0 Mode 3 with CPOL = 1 and, CPHA = 1 For these two modes, input data into the device is always latched in on the rising edge of the SCK signal and the output data is always available from the falling edge of the SCK clock signal. The difference between the two modes is the clock polarity when the bus master is in standby mode and not transferring any data. SCK will stay at logic low state with CPOL = 0, CPHA = 0 SCK will stay at logic high state with CPOL = 1, CPHA = 1 Figure 4.1 SPI SDR Modes Supported CPOL=0_CPHA=0_SCLK CPOL=1_CPHA=1_SCLK CS# SI_IO0 MSB SO_IO1 MSB Timing diagrams throughout the remainder of the document are generally shown as both mode 0 and 3 by showing SCK as both high and low at the fall of CS#. In some cases a timing diagram may show only mode 0 with SCK low at the fall of CS#. In such a case, mode 3 timing simply means clock is high at the fall of CS# so no SCK rising edge set up or hold time to the falling edge of CS# is needed for mode 3. SCK cycles are measured (counted) from one falling edge of SCK to the next falling edge of SCK. In mode 0 the beginning of the first SCK cycle in a command is measured from the falling edge of CS# to the first falling edge of SCK because SCK is already low at the beginning of a command. 4.1.2 Double Data Rate (DDR) Mode 0 and Mode 3 are also supported for DDR commands. In DDR commands, the instruction bits are always latched on the rising edge of clock, the same as in SDR commands. However, the address and input data that follow the instruction are latched on both the rising and falling edges of SCK. The first address bit is latched on the first rising edge of SCK following the falling edge at the end of the last instruction bit. The first bit of output data is driven on the falling edge at the end of the last access latency (dummy) cycle. SCK cycles are measured (counted) in the same way as in SDR commands, from one falling edge of SCK to the next falling edge of SCK. In mode 0 the beginning of the first SCK cycle in a command is measured from the falling edge of CS# to the first falling edge of SCK because SCK is already low at the beginning of a command. Figure 4.2 SPI DDR Modes Supported CPOL=0_CPHA=0_SCLK CPOL=1_CPHA=1_SCLK CS# Transfer_Phase IO0 Instruction Address Inst. 0 Mode Dummy / DLP A28 A24 A0 M4 M0 DLP. DLP. D0 D1 IO1 A29 A25 A1 M5 M1 DLP. DLP. D0 D1 IO2 A30 A26 A2 M6 M2 DLP. DLP. D0 D1 IO3 A31 A27 A3 M7 M3 DLP. DLP. D0 D1 Document Number: 002-03631 Rev. *C Inst. 7 Page 12 of 147 PRELIMINARY 4.2 S25FS064S Command Protocol All communication between the host system and FS-S Family memory devices is in the form of units called commands. All commands begin with an 8-bit instruction that selects the type of information transfer or device operation to be performed. Commands may also have an address, instruction modifier, latency period, data transfer to the memory, or data transfer from the memory. All instruction, address, and data information is transferred sequentially between the host system and memory device. Command protocols are also classified by a numerical nomenclature using three numbers to reference the transfer width of three command phases: instruction address and instruction modifier (continuous read mode bits) data Single bit wide commands start with an instruction and may provide an address or data, all sent only on the SI signal. Data may be sent back to the host serially on the SO signal. This is referenced as a 1-1-1 command protocol for single bit width instruction, single bit width address and modifier, single bit data. Dual Output or Quad Output commands provide an address sent from the host as serial on SI (IO0) then followed by dummy cycles. Data is returned to the host as bit pairs on IO0 and IO1 or, four bit (nibble) groups on IO0, IO1, IO2, and IO3. This is referenced as 1-1-2 for Dual-O and 1-1-4 for Quad-O command protocols. Dual or Quad Input / Output (I/O) commands provide an address sent from the host as bit pairs on IO0 and IO1 or, four bit (nibble) groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as bit pairs on IO0 and IO1 or, four bit (nibble) groups on IO0, IO1, IO2, and IO3. This is referenced as 1-2-2 for Dual I/O and 1-4-4 for Quad I/O command protocols. The FS-S Family also supports a QPI mode in which all information is transferred in 4-bit width, including the instruction, address, modifier, and data. This is referenced as a 4-4-4 command protocol. Commands are structured as follows: Each command begins with CS# going low and ends with CS# returning high. The memory device is selected by the host driving the Chip Select (CS#) signal low throughout a command. The serial clock (SCK) marks the transfer of each bit or group of bits between the host and memory. Each command begins with an eight bit (byte) instruction. The instruction selects the type of information transfer or device operation to be performed. The instruction transfers occur on SCK rising edges. However, some read commands are modified by a prior read command, such that the instruction is implied from the earlier command. This is called Continuous Read Mode. When the device is in continuous read mode, the instruction bits are not transmitted at the beginning of the command because the instruction is the same as the read command that initiated the Continuous Read Mode. In Continuous Read mode the command will begin with the read address. Thus, Continuous Read Mode removes eight instruction bits from each read command in a series of same type read commands. The instruction may be stand alone or may be followed by address bits to select a location within one of several address spaces in the device. The instruction determines the address space used. The address may be either a 24 bit or a 32 bit, byte boundary, address. The address transfers occur on SCK rising edge, in SDR commands, or on every SCK edge, in DDR commands. In legacy SPI mode, the width of all transfers following the instruction are determined by the instruction sent. Following transfers may continue to be single bit serial on only the SI or Serial Output (SO) signals, they may be done in two bit groups per (dual) transfer on the IO0 and IO1 signals, or they may be done in 4 bit groups per (quad) transfer on the IO0-IO3 signals. Within the dual or quad groups the least significant bit is on IO0. More significant bits are placed in significance order on each higher numbered IO signal. Single bits or parallel bit groups are transferred in most to least significant bit order. In QPI mode, the width of all transfers is a 4-bit wide (quad) transfer on the IO0-IO3 signals. Dual and Quad I/O read instructions send an instruction modifier called Continuous Read mode bits, following the address, to indicate whether the next command will be of the same type with an implied, rather than an explicit, instruction. These mode bits initiate or end the continuous read mode. In continuous read mode, the next command thus does not provide an instruction byte, only a new address and mode bits. This reduces the time needed to send each command when the same command type is repeated in a sequence of commands. The mode bit transfers occur on SCK rising edge, in SDR commands, or on every SCK edge, in DDR commands. Document Number: 002-03631 Rev. *C Page 13 of 147 PRELIMINARY S25FS064S The address or mode bits may be followed by write data to be stored in the memory device or by a read latency period before read data is returned to the host. Write data bit transfers occur on SCK rising edge, in SDR commands, or on every SCK edge, in DDR commands. SCK continues to toggle during any read access latency period. The latency may be zero to several SCK cycles (also referred to as dummy cycles). At the end of the read latency cycles, the first read data bits are driven from the outputs on SCK falling edge at the end of the last read latency cycle. The first read data bits are considered transferred to the host on the following SCK rising edge. Each following transfer occurs on the next SCK rising edge, in SDR commands, or on every SCK edge, in DDR commands. If the command returns read data to the host, the device continues sending data transfers until the host takes the CS# signal high. The CS# signal can be driven high after any transfer in the read data sequence. This will terminate the command. At the end of a command that does not return data, the host drives the CS# input high. The CS# signal must go high after the eighth bit, of a stand alone instruction or, of the last write data byte that is transferred. That is, the CS# signal must be driven high when the number of bits after the CS# signal was driven low is an exact multiple of eight bits. If the CS# signal does not go high exactly at the eight bit boundary of the instruction or write data, the command is rejected and not executed. All instruction, address, and mode bits are shifted into the device with the Most Significant Bits (MSB) first. The data bits are shifted in and out of the device MSB first. All data is transferred in byte units with the lowest address byte sent first. Following bytes of data are sent in lowest to highest byte address order i.e. the byte address increments. All attempts to read the flash memory array during a program, erase, or a write cycle (embedded operations) are ignored. The embedded operation will continue to execute without any affect. A very limited set of commands are accepted during an embedded operation. These are discussed in the individual command descriptions. Depending on the command, the time for execution varies. A command to read status information from an executing command is available to determine when the command completes execution and whether the command was successful. Document Number: 002-03631 Rev. *C Page 14 of 147 PRELIMINARY 4.2.1 S25FS064S Command Sequence Examples Figure 4.3 Stand Alone Instruction Command CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction Figure 4.4 Single Bit Wide Input Command CS# SCLK SO_IO1-IO3 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 SO Phase Instruction Input Data Figure 4.5 Single Bit Wide Output Command without latency CS# SCLK SI 7 6 5 4 3 2 1 0 SO 7 Phase 6 5 Instruction 4 3 2 1 0 7 6 5 4 Data 1 3 2 1 0 Data 2 Figure 4.6 Single Bit Wide I/O Command with latency CS# SCLK SI 7 6 5 4 3 2 1 0 31 1 0 SO 7 Phase Instruction Address 6 5 4 Dummy Cycles 3 2 1 0 Data 1 Figure 4.7 Dual Output Read Command CS# SCK IO0 7 6 5 4 3 2 1 0 31 1 0 6 IO1 7 Phase Instruction Address Dummy Cycles 4 2 0 6 5 3 1 7 Data 1 4 2 0 5 3 1 Data 2 Figure 4.8 Quad Output Read Command CS# SCK IO0 4 0 4 0 4 0 4 0 4 0 4 IO1 5 1 5 1 5 1 5 1 5 1 5 IO2 6 2 6 2 6 2 6 2 6 2 6 IO3 7 3 7 3 7 3 7 3 7 3 7 Phase 7 6 5 4 3 Instruction Document Number: 002-03631 Rev. *C 2 1 0 31 1 Address 0 Dummy D1 D2 D3 D4 D5 Page 15 of 147 PRELIMINARY S25FS064S Figure 4.9 Dual I/O Command CS# SCK IO0 7 6 5 4 3 2 1 0 IO1 Phase 30 2 0 6 4 2 0 6 4 2 0 6 4 2 0 31 3 1 7 5 3 1 7 5 3 1 7 5 3 1 Instruction Address Mode Dum Data 1 Data 2 Figure 4.10 Quad I/O Command CS# SCLK IO0 28 4 0 4 0 4 0 4 0 4 0 4 0 IO1 7 6 5 29 5 1 5 1 5 1 5 1 5 1 5 1 IO2 30 6 2 6 2 6 2 6 2 6 2 6 2 IO3 31 7 3 7 3 7 3 7 3 7 3 7 3 Phase 4 3 2 1 0 Instruction Address Mode Dummy D1 D2 D3 D4 Note: 1. The gray bits are optional, the host does not have to drive bits during that cycle Figure 4.11 Quad I/O Read Command in QPI Mode CS# SCLK IO0 4 0 28 4 0 4 0 4 0 4 0 4 0 4 0 IO1 5 1 29 5 1 5 1 5 1 5 1 5 1 5 1 IO2 6 2 30 6 2 6 2 6 2 6 2 6 2 6 2 7 3 31 7 3 7 3 3 7 3 7 3 7 IO3 Phase Instruct. Address 7 Mode Dummy D1 D2 D3 3 D4 Note: 1. The gray bits are optional, the host does not have to drive bits during that cycle Figure 4.12 DDR Quad I/O Read Command CS# SCLK IO0 0 2824201612 8 4 0 4 0 7 6 5 4 3 2 1 0 4 0 4 0 IO1 2925211713 9 5 1 5 1 7 6 5 4 3 2 1 0 5 1 5 1 IO2 302622181410 6 2 6 2 7 6 5 4 3 2 1 0 6 2 6 2 IO3 312723191511 7 3 7 3 7 6 5 4 3 2 1 0 7 3 7 3 Phase 7 6 5 4 3 Instruction 2 1 Address Mode Dummy DLP D1 D2 Note: 1. The gray bits are optional, the host does not have to drive bits during that cycle Document Number: 002-03631 Rev. *C Page 16 of 147 PRELIMINARY S25FS064S Figure 4.13 DDR Quad I/O Read Command QPI Mode CS# SCLK IO0 4 0 28 24 20 16 12 8 4 0 4 0 7 6 5 4 3 2 1 0 4 0 4 0 IO1 5 1 29 25 21 17 13 9 5 1 5 1 7 6 5 4 3 2 1 0 5 1 5 1 IO2 6 2 30 26 22 18 14 10 6 2 6 2 7 6 5 4 3 2 1 0 6 2 6 2 IO3 7 3 31 27 23 19 15 11 7 3 7 3 7 6 5 4 3 2 1 0 7 3 7 3 Phase Instruct. Address Mode Dummy DLP D1 D2 Note: 1. The gray bits are optional, the host does not have to drive bits during that cycle Additional sequence diagrams, specific to each command, are provided in section 11. Commands on page 73. 4.3 Interface States This section describes the input and output signal levels as related to the SPI interface behavior. Table 4.1 Interface States Summary Interface State VDD SCK CS# RESET# IO3_RESET# WP# / IO2 SO / IO1 SI / IO0 Power-Off tRP, the device will reset register states in the same manner as power-on reset but, does not go through the full reset process that is performed during POR. The hardware reset process requires a period of tRPH to complete. The RESET# input is available only on the BGA ball packages. The IO3_RESET# input initiates the reset operation under the following when CS# is high for more than tCS time or when Quad or QPI Mode is not enabled CR1V[1]=0 or CR2V[6]=0. The IO3_RESET# input has an internal pull-up to VDD and may be left unconnected if Quad or QPI mode is not used. The tCS delay after CS# goes high gives the memory or host system time to drive IO3 high after its use as a Quad or QPI mode I/O signal while CS# was low. The internal pull-up to VDD will then hold IO3_RESET# high until the host system begins driving IO3_RESET#. The IO3_RESET# input is ignored while CS# remains high during tCS, to avoid an unintended Reset operation. If CS# is driven low to start a new command, IO3_RESET# is used as IO3. When the device is not in Quad or QPI mode or, when CS# is high, and IO3_RESET# transitions from VIH to VIL for > tRP, following tCS, the device will reset register states in the same manner as power-on reset but, does not go through the full reset process that is performed during POR. The hardware reset process requires a period of tRPH to complete. If the POR process did not complete correctly for any reason during power-up (tPU), RESET# going low will initiate the full POR process instead of the hardware reset process and will require tPU to complete the POR process. The software reset command (RSTEN 66h followed by RST 99h) is independent of the state of RESET # and IO3_RESET#. If RESET# and IO3_RESET# is high or unconnected, and the software reset instructions are issued, the device will perform software reset. Additional IO3 RESET# notes: If both RESET# and IO3_RESET# input options are available use only one reset option in your system. IO3_RESET# input reset operation can be disable by setting CR2NV[7]=0 (See Table 9.15, Configuration Register 2 Non-volatile (CR2NV) on page 54) setting the IO3_RESET to only operate as IO3. The RESET# input can be disable by not connecting or tying the RESET# input to VIH. RESET# or IO3_RESET# must be high for tRS following tPU or tRPH, before going low again to initiate a hardware reset. When IO3_RESET# is driven low for at least a minimum period of time (tRP), following tCS, the device terminates any operation in progress, makes all outputs high impedance, and ignores all read/write commands for the duration of tRPH. The device resets the interface to standby state. If Quad or QPI mode and the IO3_RESET# feature are enabled, the host system should not drive IO3 low during tCS, to avoid driver contention on IO3. Immediately following commands that transfer data to the host in Quad or QPI mode, e.g. Quad I/O Read, the memory drives IO3_RESET# high during tCS, to avoid an unintended Reset operation. Immediately following commands that transfer data to the memory in Quad mode, e.g. Page Program, the host system should drive IO3_RESET# high during tCS, to avoid an unintended Reset operation. Document Number: 002-03631 Rev. *C Page 30 of 147 PRELIMINARY S25FS064S If Quad mode is not enabled, and if CS# is low at the time IO3_RESET# is asserted low, CS# must return high during tRPH before it can be asserted low again after tRH. Table 6.3 Hardware Reset Parameters Parameter Description Limit Time Unit tRS Reset Setup - Prior Reset end and RESET# high before RESET# low Min 50 ns tRPH Reset Pulse Hold - RESET# low to CS# low Min 35 s tRP RESET# Pulse Width Min 200 ns tRH Reset Hold - RESET# high before CS# low Min 50 ns Notes: 1. RESET# and IO3_RESET# Low is ignored during Power-up (tPU). If Reset# is asserted during the end of tPU, the device will remain in the reset state and tRH will determine when CS# may go Low. 2. If Quad mode is enabled, IO3_RESET# Low is ignored during tCS. 3. Sum of tRP and tRH must be equal to or greater than tRPH. Figure 6.7 Hardware Reset using RESET# Input tRP RESET# Any prior reset tRH tRH tRPH tRS tRPH CS# Figure 6.8 Hardware Reset when Quad or QPI Mode is not enabled and IO3_RESET# is Enabled tRP IO3_RESET# Any prior reset tRH tRH tRPH tRS tRPH CS# Figure 6.9 Hardware Reset when Quad or QPI Mode and IO3_RESET# are Enabled tDIS IO3_RESET# tRP Reset Pulse tRH tCS CS# tRPH Prior access using IO3 for data Document Number: 002-03631 Rev. *C Page 31 of 147 PRELIMINARY 6.4 S25FS064S SDR AC Characteristics Table 6.4 SDR AC Characteristics Symbol Min Max Unit FSCK, R SCK Clock Frequency for READ and 4READ instructions DC 50 MHz FSCK, C SCK Clock Frequency for the following dual and quad commands: DOR, 4DOR, DIOR, 4DIOR, QOR, 4QOR, QIOR, 4QIOR DC 133 MHz ns PSCK Parameter SCK Clock Period 1/ FSCK tWH, tCH Clock High Time 50% PSCK -5% 50% PSCK +5% tWL, tCL Clock Low Time 50% PSCK -5% 50% PSCK +5% ns tCRT, tCLCH Clock Rise Time (slew rate) 0.1 V/ns tCFT, tCHCL Clock Fall Time (slew rate) 0.1 V/ns 10 20 (5) 50 ns 2 ns tCS CS# High Time (Read Instructions) CS# High Time (Read Instructions when Reset feature and Quad mode are both enabled) CS# High Time (Program/Erase Instructions) tCSS CS# Active Setup Time (relative to SCK) tCSH CS# Active Hold Time (relative to SCK) 3 ns tSU Data in Setup Time 2 ns tHD Data in Hold Time 3 tV ns 8 (2) 6 (3) Clock Low to Output Valid ns 6.5 (3)(6) tHO Output Hold Time tDIS Output Disable Time (4) Output Disable Time (when Reset feature and Quad mode are both enabled) 1 ns 8 20 (5) ns tWPS WP# Setup Time (1) 20 ns tWPH WP# Hold Time (1) 100 ns tDPD CS# High to Power-down Mode 3 s tRES CS# High to Standby Mode without Electronic Signature Read 30 s Notes: 1. Only applicable as a constraint for WRR or WRAR instruction when SRWD is set to a 1 2. Full VDD range and CL=30 pF 3. Full VDD range and CL=15 pF 4. Output HI-Z is defined as the point where data is no longer driven. 5. tCS and tDIS require additional time when the Reset feature and Quad mode are enabled (CR2V[5]=1 and CR1V[1]=1). 6. SOIC package Document Number: 002-03631 Rev. *C Page 32 of 147 PRELIMINARY 6.4.1 S25FS064S Clock Timing Figure 6.10 Clock Timing PSCK tCL tCH VIH min VDD / 2 VIL max tCFT tCRT 6.4.2 Input / Output Timing Figure 6.11 SPI Single Bit Input Timing tCS CS# tCSH tCSS tCSH tCSS SCK tSU tHD SI MSB IN LSB IN SO Figure 6.12 SPI Single Bit Output Timing tCS CS# SCK SI tV SO Document Number: 002-03631 Rev. *C tHO MSB OUT tDIS LSB OUT Page 33 of 147 PRELIMINARY S25FS064S Figure 6.13 SDR MIO Timing tCS CS# tCSS tCSH tCSS SCLK tSU tHD IO MSB IN tV LSB IN tHO tV MSB OUT . tDIS LSB OUT Figure 6.14 WP# Input Timing CS# tWPS tWPH WP# SCLK SI 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 SO Phase WRR or WRAR Instruction Document Number: 002-03631 Rev. *C Input Data Page 34 of 147 PRELIMINARY 6.5 S25FS064S DDR AC Characteristics . Table 6.5 DDR AC Characteristics Symbol Parameter Min Max Unit DC 80 MHz FSCK, R SCK Clock Frequency for DDR READ instruction PSCK, R SCK Clock Period for DDR READ instruction 1/ FSCK ns tWH, tCH Clock High Time 45% PSCK ns Clock Low Time 45% PSCK ns 10 20 ns tWL, tCL tCS CS# High Time (Read Instructions) CS# High Time (Read Instructions when Reset feature is enabled) tCSS CS# Active Setup Time (relative to SCK) 2 ns tCSH CS# Active Hold Time (relative to SCK) 3 ns tSU IO in Setup Time 1.5 ns tHD IO in Hold Time 1.5 Clock Low to Output Valid 1.5 tHO Output Hold Time 1.5 tDIS Output Disable Time Output Disable Time (when Reset feature is enabled) tV tIO_skew First IO to last IO data valid time (2) ns 6.0 (1) 6.5 (1)(3) ns ns 8 20 600 700(3) ns ps tDPD CS# High to Power-down Mode 3 s tRES CS# High to Standby Mode without Electronic Signature Read 30 s Notes: 1. CL=15 pF 2. Not Tested 3. SOIC package Document Number: 002-03631 Rev. *C Page 35 of 147 PRELIMINARY 6.5.1 S25FS064S DDR Input Timing Figure 6.15 SPI DDR Input Timing tCS CS# tCSH tCSS tCSH tCSS SCK tHD tSU tHD tSU IO's 6.5.2 Inst. MSB MSB IN LSB IN DDR Output Timing Figure 6.16 SPI DDR Output Timing tCS CS# SCK tHO IO's MSB Document Number: 002-03631 Rev. *C tV tV tDIS LSB Page 36 of 147 PRELIMINARY 6.5.3 S25FS064S DDR Data Learning Pattern Timing Figure 6.17 SPI Data Learning Pattern DDR Data Valid Window pSCK tCL tCH SCK tIO_SKEW tV tOTT IO Slow Slow D1 Slow D2 S. tV IO Fast Fast D1 Fast D2 tV_min tHO tDV IO_valid D1 D2 Notes: 1. tCLH is the shorter duration of tCL or tCH. 2. tO_SKEW is the maximum difference (delta) between the minimum and maximum tV (output valid) across all IO signals. 3. tOTT is the maximum Output Transition Time from one valid data value to the next valid data value on each IO. 4. tOTT is dependent on system level considerations including: a. b. c. d. Memory device output impedance (drive strength). System level parasitics on the IOs (primarily bus capacitance). Host memory controller input VIH and VIL levels at which 0 to 1 and 1 to 0 transitions are recognized. As an example, assuming that the above considerations result in a memory output slew rate of 2 V/ns and a 3V transition (from 1 to 0 or 0 to 1) is required by the host, the tOTT would be: tOTT = 2V / (2 V/ns) = 1.0 ns e. tOTT is not a specification tested by Cypress, it is system dependent and must be derived by the system designer based on the above considerations. 6.5.3.1 Data Learning Pattern Minimum Window The minimum data valid window (tDV) can be calculated as follows: As an example, assuming: 80 MHz clock frequency = 12.5 ns clock period with DDR operations are specified to have a duty cycle of 45% or higher. tCLH = 0.45*PSCK = 0.45 x 12.5ns = 5.625ns tO_SKEW = 600ps tOTT = 1.0ns tDV = tCLH - tO_SKEW - tOTT - tDV = 5.625ns - 600ps - 1.0ns = 4.025ns tV _min = tHO + tO_SKEW + tOTT - tV _min = 1.0 ns + 600ps + 1.0 ns = 2.6 ns Document Number: 002-03631 Rev. *C Page 37 of 147 PRELIMINARY 7. S25FS064S Embedded Algorithm Performance Tables Table 7.1 Program and Erase Performance Typ (1) Max Unit tW Non-volatile Register Write Time 240 725 ms tPP Page Programming (512 Bytes) Page Programming (256Bytes) 475 360 2000 2000 s Sector Erase Time (64KB or 4KB physical sectors) 240 725 ms Sector Erase Time (256KB logical sectors = 4x64K physical sectors) 960 2900 ms sec Symbol tSE tBE tEES Parameter Min Bulk Erase Time (S25FS064S) 30 94 Evaluate Erase Status Time (64 KB or 4KB physical sectors) 20 25 Evaluate Erase Status Time (256 KB physical or logical sectors) 80 100 s Notes: 1. Typical program and erase times assume the following conditions: 25 C, VDD = 1.8 V; random data pattern. 2. The programming time for any OTP programming command is the same as tPP. This includes OTPP 42h, PNVDLR 43h, ASPP 2Fh, and PASSP E8h. 3. The programming time for the PPBP E3h command is the same as tPP.. The erase time for PPBE E4h command is the same as tSE. Table 7.2 Program or Erase Suspend AC Parameters Parameter Typical Suspend Latency (tSL) Resume to next Program Suspend (tRS) 100 Document Number: 002-03631 Rev. *C Max Unit 45 s The time from Suspend command until the WIP bit is 0 Comments s The time needed to issue the next Suspend command but typical periods are needed for Program or Erase to progress to completion. Page 38 of 147 PRELIMINARY 8. S25FS064S Physical Interface 8.1 Connection Diagrams 8.1.1 8 Connector Packages Figure 8.1 8-Pin Plastic Small Outline Package (SOIC8) CS# 1 8 VDD SO / IO 1 2 7 IO 3 / R ESET# SO IC W P# / IO 2 3 6 SCK V SS 4 5 SI / IO 0 Figure 8.2 8-Pad LGA 5x6 (W9A008), Top View CS# 1 8 VDD SO / IO 1 2 7 IO 3 / RESET# LG A W P# / IO 2 3 6 SCK V SS 4 5 SI / IO 0 Note: 1. The RESET# input has an internal pull-up and may be left unconnected in the system if quad mode and hardware reset are not in use. Document Number: 002-03631 Rev. *C Page 39 of 147 PRELIMINARY 8.1.2 S25FS064S BGA Ball Footprint Figure 8.3 24-Ball BGA, 5x5 Ball Footprint (FAB024), Top View 1 2 3 4 5 A NC NC RESET# NC DNU SCK VSS VDD NC DNU CS# RFU WP#/IO2 NC DNU SO/IO1 NC NC B C D SI/IO0 IO3/RESET# NC E NC RFU NC Note: 1. The RESET# input has an internal pull-up and may be left unconnected in the system if quad mode and hardware reset are not in use. 8.1.3 Special Handling Instructions for FBGA Packages Flash memory devices in BGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150C for prolonged periods of time. Document Number: 002-03631 Rev. *C Page 40 of 147 PRELIMINARY 8.2 Physical Diagrams 8.2.1 SOIC 8-Lead, 208 mil Body Width (SOC008) Document Number: 002-03631 Rev. *C S25FS064S Page 41 of 147 PRELIMINARY 8.2.2 S25FS064S LGA 8-contact 5 x 6 mm (W9A008) Document Number: 002-03631 Rev. *C Page 42 of 147 PRELIMINARY 8.2.3 S25FS064S Ball Grid Array 24-ball 6 x 8 mm (FAB024) Document Number: 002-03631 Rev. *C Page 43 of 147 PRELIMINARY S25FS064S Software Interface This section discusses the features and behaviors most relevant to host system software that interacts with FS-S Family memory devices. 9. Address Space Maps 9.1 Overview 9.1.1 Extended Address The FS-S Family supports 32 bit (4 Byte) addresses to enable higher density devices than allowed by previous generation (legacy) SPI devices that supported only 24 bit (3 Byte) addresses. A 24 bit, byte resolution, address can access only 16 MBytes (128 Mbits) maximum density. A 32 bit, byte resolution, address allows direct addressing of up to a 4 GBytes (32 Gbits) address space and allows for software compatibility for device from 4 MBytes (32 Mbits) to 4 GBytes (32 Gbits). Legacy commands continue to support 24 bit addresses for backward software compatibility. Extended 32 bit addresses are enabled in two ways: Extended address mode -- a volatile configuration register bit that changes all legacy commands to expect 32 bits of address supplied from the host system. 4 Byte address commands -- that perform both legacy and new functions, which always expect 32 bit address. The default condition for extended address mode, after power-up or reset, is controlled by a non-volatile configuration bit. The default extended address mode may be set for 24 or 32 bit addresses. This enables legacy software compatible access to the first 128 Mbits of a device or for the device to start directly in 32 bit address mode. The 64Mb density member of the FS-S Family supports the extended address features in the same way but in essence ignores bits 31 to 23 or 22 of any address because the main Flash array only needs 23 or 22 bits of address. This enables simple migration from the 64Mb density to higher density devices without changing the address handling aspects of software. 9.1.2 Multiple Address Spaces Many commands operate on the main Flash memory array. Some commands operate on address spaces separate from the main Flash array. Each separate address space uses the full 24 or 32 bit address but may only define a small portion of the available address space. 9.2 Flash Memory Array The main Flash array is divided into erase units called physical sectors. The FS-S family physical sectors may be configured as a hybrid combination of eight 4KB parameter sectors at the top or bottom of the address space with all but one of the remaining sectors being uniform size. Because the group of eight 4KB parameter sectors is in total smaller than a uniform sector, the group of 4KB physical sectors respectively overlay (replace) the top or bottom 32KB of the highest or lowest address uniform sector. The parameter sector erase commands (20h or 21h) must be used to erase the 4KB sectors individually. The sector (uniform block) erase commands (D8h or DCh) must be used to erase any of the remaining sectors, including the portion of highest or lowest address sector that is not overlaid by the parameter sectors. The uniform block erase command has no effect on parameter sectors. Configuration register 1 non-volatile bit 2 (CR1NV[2]) equal to 0 overlays the parameter sectors at the bottom of the lowest address uniform sector. CR1NV[2] = 1 overlays the parameter sectors at the top of the highest address uniform sector. See Section 9.6, Registers on page 48 for more information. There is also a configuration option to remove the 4KB parameter sectors from the address map so that all sectors are uniform size. Configuration register 3 volatile bit 3 (CR3V[3]) equal to 0 selects the hybrid sector architecture with 4KB parameter sectors. CR3V[3]=1 selects the uniform sector architecture without parameter sectors. Uniform physical sectors are: Document Number: 002-03631 Rev. *C Page 44 of 147 PRELIMINARY S25FS064S 64KB or 256KB The devices also may be configured to use the sector (uniform block) erase commands to erase 256KB logical blocks rather than individual 64KB physical sectors. This configuration option (CR3V[1]=1) allows lower density devices to emulate the same sector erase behavior as higher density members of the family that use 256KB physical sectors. This can simplify software migration to the higher density members of the family. Table 9.1 S25FS064S Sector and Memory Address Map, Bottom 4 KBytes Sectors Sector Size (KByte) Sector Count 4 8 32 64 1 127 Sector Range Address Range (Byte Address) SA00 00000000h-00000FFFh Notes : : SA07 00007000h-00007FFFh SA08 00008000h-0000FFFFh -- SA09 00010000h-0001FFFFh Sector Ending Address : : SA135 007F0000h-007FFFFFh Sector Starting Address Table 9.2 S25FS064S Sector and Memory Address Map, Top 4 KBytes Sectors Sector Size (KByte) Sector Count 64 127 32 1 4 8 Sector Range Address Range (Byte Address) SA00 0000000h-000FFFFh Notes : : SA126 007E0000h-007EFFFFh SA127 007F0000h - 007F7FFFh -- SA128 007F8000h - 007F8FFFh Sector Ending Address : : SA135 007FF000h-007FFFFFh Sector Starting Address Table 9.3 S25FS064S Sector and Memory Address Map, Uniform 64 KBytes Blocks Sector Size (KByte) Sector Count 64 128 Sector Range Address Range (Byte Address) Notes SA00 0000000h-0000FFFFh, Sector Starting Address : : -- SA127 007F0000h-07FFFFFh Sector Ending Address Table 9.4 S25FS064S Sector Address Map, Bottom 4 KB Sectors, 256 KB Logical Uniform Sectors Sector Size (KByte) Sector Count 4 8 224 1 Sector Range Address Range (Byte Address) SA00 00000000h-00000FFFh : : SA07 00007000h-00007FFFh SA08 00008000h-0003FFFFh -- 00040000h-0007FFFFh Sector Ending Address SA09 256 31 Document Number: 002-03631 Rev. *C Notes : : SA39 007C0000h-007FFFFFh Sector Starting Address Page 45 of 147 PRELIMINARY S25FS064S Table 9.5 S25FS064S Sector Address Map, Top 4 KB Sectors, 256 KB Logical Uniform Sectors Sector Range Address Range (Byte Address) SA00 00000000h-0003FFFFh : : Sector Size (KByte) Sector Count 256 31 SA30 00780000h-007BFFFFh 224 1 SA31 007C0000h-007F7FFFh SA62 007F8000h-007F8FFFh 4 8 : : SA39 007FF000h-007FFFFFh Notes Sector Starting Address -- Sector Ending Address Table 9.6 S25FS064S Sector and Memory Address Map, Uniform 256 KBytes Blocks Sector Size (KByte) Sector Count 256 32 Sector Range Address Range (Byte Address) Notes SA00 00000000h-0003FFFFh Sector Starting Address : : -- SA31 007C0000h-007FFFFFh Sector Ending Address Note: These are condensed tables that use a couple of sectors as references. There are address ranges that are not explicitly listed. All 4KB sectors have the pattern XXXX000h-XXXXFFFh. All 64KB sectors have the pattern XXX0000h-XXXFFFFh. All 256 KB sectors have the pattern XX00000h-XX3FFFFh, XX40000h-XX7FFFFh, XX80000h-XXCFFFFh, or XXD0000h-XXFFFFFh. 9.3 ID-CFI Address Space The RDID command (9Fh) reads information from a separate Flash memory address space for device identification (ID) and Common Flash Interface (CFI) information. See Section 13.2, Device ID and Common Flash Interface (ID-CFI) Address Map -- Standard on page 124 for the tables defining the contents of the ID-CFI address space. The ID-CFI address space is programmed by Cypress and read-only for the host system. 9.3.1 Cypress Programmed Unique ID A 64-bit unique number is located in 8 bytes of the Unique Device ID address space. This Unique ID may be used as a software readable serial number that is unique for each device. 9.4 JEDEC JESD216 Serial Flash Discoverable Parameters (SFDP) Space. The RSFDP command (5Ah) reads information from a separate Flash memory address space for device identification, feature, and configuration information, in accord with the JEDEC JESD216 Rev B standard for Serial Flash Discoverable Parameters. The ID-CFI address space is incorporated as one of the SFDP parameters. See Section 13., Software Interface Reference on page 124 for the tables defining the contents of the SFDP address space. The SFDP address space is programmed by Cypress and read-only for the host system. Document Number: 002-03631 Rev. *C Page 46 of 147 PRELIMINARY 9.5 S25FS064S OTP Address Space Each FS-S Family memory device has a 1024 byte One Time Program (OTP) address space that is separate from the main Flash array. The OTP area is divided into 32, individually lockable, 32 byte aligned and length regions. In the 32 byte region starting at address zero: The 16 lowest address bytes are programmed by Cypress with a 128 bit random number. Only Cypress is able to program zeros in these bytes. Programming ones in these byte locations is ignored and does not affect the value programmed by Cypress. Attempting to program any zero in these byte locations will fail and set P_ERR. The next 4 higher address bytes (OTP Lock Bytes) are used to provide one bit per OTP region to permanently protect each region from programming. The bytes are erased when shipped from Cypress. After an OTP region is programmed, it can be locked to prevent further programming, by programming the related protection bit in the OTP Lock Bytes. The next higher 12 bytes of the lowest address region are Reserved for Future Use (RFU). The bits in these RFU bytes may be programmed by the host system but it must be understood that a future device may use those bits for protection of a larger OTP space. The bytes are erased when shipped from Cypress. The remaining regions are erased when shipped from Cypress, and are available for programming of additional permanent data. Refer to Figure 9.1, OTP Address Space on page 47 for a pictorial representation of the OTP memory space. The OTP memory space is intended for increased system security. OTP values, such as the random number programmed by Cypress, can be used to "mate" a flash component with the system CPU/ASIC to prevent device substitution. The configuration register FREEZE (CR1V[0]) bit protects the entire OTP memory space from programming when set to "1". This allows trusted boot code to control programming of OTP regions then set the FREEZE bit to prevent further OTP memory space programming during the remainder of normal power-on system operation. Figure 9.1 OTP Address Space 32 Byte OTP Region 31 32 Byte OTP Region 30 32 Byte OTP Region 29 When programmed to 0, each lock bit protects its related 32 byte OTP region from any further programming .. . 32 Byte OTP Region 3 32 Byte OTP Region 2 32 Byte OTP Region 1 32 Byte OTP Region 0 Region 0 Expanded View ... Reserved Byte 1Fh Document Number: 002-03631 Rev. *C 16 Byte Random Number Lock Bits 31 to 0 Byte 10h Byte 0h Page 47 of 147 PRELIMINARY S25FS064S Table 9.8 OTP Address Map Region Byte Address Range (Hex) Contents 000 Least Significant Byte of Cypress Programmed Random Number ... ... 00F Most Significant Byte of Cypress Programmed Random Number 010 to 013 Region Locking Bits Byte 10 [bit 0] locks region 0 from programming when = 0 ... Byte 13 [bit 7] locks region 31from programming when = 0 All Bytes = FF Region 0 9.6 Initial Delivery State (Hex) Cypress Programmed Random Number 014 to 01F Reserved for Future Use (RFU) All Bytes = FF Region 1 020 to 03F Available for User Programming All Bytes = FF Region 2 040 to 05F Available for User Programming All Bytes = FF ... ... Available for User Programming All Bytes = FF Region 31 3E0 to 3FF Available for User Programming All Bytes = FF Registers Registers are small groups of memory cells used to configure how the FS-S Family memory device operates or to report the status of device operations. The registers are accessed by specific commands. The commands (and hexadecimal instruction codes) used for each register are noted in each register description. In legacy SPI memory devices the individual register bits could be a mixture of volatile, non-volatile, or One Time Programmable (OTP) bits within the same register. In some configuration options the type of a register bit could change e.g. from non-volatile to volatile. The FS-S Family uses separate non-volatile or volatile memory cell groups (areas) to implement the different register bit types. However, the legacy registers and commands continue to appear and behave as they always have for legacy software compatibility. There is a non-volatile and a volatile version of each legacy register when that legacy register has volatile bits or when the command to read the legacy register has zero read latency. When such a register is read the volatile version of the register is delivered. During Power-On Reset (POR), hardware reset, or software reset, the non-volatile version of a register is copied to the volatile version to provide the default state of the volatile register. When non-volatile register bits are written the non-volatile version of the register is erased and programmed with the new bit values and the volatile version of the register is updated with the new contents of the nonvolatile version. When OTP bits are programmed the non-volatile version of the register is programmed and the appropriate bits are updated in the volatile version of the register. When volatile register bits are written, only the volatile version of the register has the appropriate bits updated. The type for each bit is noted in each register description. The default state shown for each bit refers to the state after power-on reset, hardware reset, or software reset if the bit is volatile. If the bit is non-volatile or OTP, the default state is the value of the bit when the device is shipped from Cypress. Non-volatile bits have the same cycling (erase and program) endurance as the main Flash array. Table 9.9 Register Descriptions Register Status Register-1 Status Register-2 Configuration Register-1 Configuration Register-2 Document Number: 002-03631 Rev. *C Type Bits Non-volatile 7:0 Abbreviation SR1NV[7:0] Volatile 7:0 SR1V[7:0] Volatile 7:0 SR2V[7:0] Non-volatile/OTP 7:0 CR1NV[7:0] Volatile 7:0 CR1V[7:0] Non-volatile/OTP 7:0 CR2NV[7:0] Volatile 7:0 CR2V[7:0] Page 48 of 147 PRELIMINARY S25FS064S Table 9.9 Register Descriptions (Continued) Register Configuration Register-3 Type Bits Non-volatile/OTP 7:0 Abbreviation CR3NV[7:0] Volatile 7:0 CR3V[7:0] Non-volatile/OTP 7:0 CR4NV[7:0] Volatile 7:0 CR4V[7:0] Volatile Read Only 7:0 ECCSRV[7:0] OTP 15:0 ASPR[15:0] Password Register OTP 63:0 PASS[63:0] PPB Lock Register Volatile Read Only 7:0 PPBL[7:0] PPB Access Register Non-volatile 7:0 PPBAR[7:0] DYB Access Register Volatile 7:0 DYBAR[7:0] OTP 7:0 NVDLR[7:0] Volatile 7:0 VDLR[7:0] Configuration Register-4 ECC Status Register ASP Register SPI DDR Data Learning Registers 9.6.1 Status Registers 1 9.6.1.1 Status Register 1 Non-Volatile (SR1NV) Related Commands: Write Registers (WRR 01h), Read Any Register (RDAR 65h), Write Any Register (WRAR 71h) Table 9.10 Status Register-1 Non-Volatile (SR1NV) Bits Field Name Function Type Default State Description 7 SRWD_NV Status Register Write Disable Default Non-Volatile 0 1 = Locks state of SRWD, BP, and configuration register-1 bits when WP# is low by not executing WRR or WRAR commands that would affect SR1NV, SR1V, CR1NV, or CR1V. 0 = No protection, even when WP# is low 6 P_ERR_D Programming Error Default Non-Volatile Read Only 0 Provides the default state for the Programming Error Status. Not user programmable. 5 E_ERR_D Erase Error Default Non-Volatile Read Only 0 Provides the default state for the Erase Error Status. Not user programmable. 4 BP_NV2 3 BP_NV1 Block Protection Non-Volatile Non-Volatile 000b 2 BP_NV0 1 WEL_D WEL Default Non-Volatile Read Only 0 Provides the default state for the WEL Status. Not user programmable. 0 WIP_D WIP Default Non-Volatile Read Only 0 Provides the default state for the WIP Status. Not user programmable. Protects the selected range of sectors (Block) from Program or Erase when the BP bits are configured as non-volatile (CR1NV[3]=0). Programmed to 111b when BP bits are configured to volatile (CR1NV[3]=1).- after which these bits are no longer user programmable. Status Register Write Non-volatile (SRWD_NV) SR1NV[7]: Places the device in the Hardware Protected mode when this bit is set to 1 and the WP# input is driven low. In this mode, the Write Registers (WRR) and Write Any Register (WRAR) commands (that select status register-1 or configuration register-1) are ignored and not accepted for execution, effectively locking the state of the Status Register-1 and Configuration Register-1 (SR1NV, SR1V, CR1NV, or CR1V) bits, by making the registers read-only. If WP# is high, Status Register-1 and Configuration Register-1 may be changed by the WRR or WRAR commands. If SRWD_NV is 0, WP# has no effect and Status Register-1 and Configuration Register-1 may be changed by the WRR or WRAR commands. WP# has no effect on the writing of any other registers. The SRWD_NV bit has the same non-volatile endurance as the main Flash array. The SRWD (SR1V[7]) bit serves only as a copy of the SRWD_NV bit to provide zero read latency. Program Error Default (P_ERR_D) SR1NV[6]: Provides the default state for the Programming Error Status in SR1V[6]. This bit is not user programmable. Document Number: 002-03631 Rev. *C Page 49 of 147 PRELIMINARY S25FS064S Erase Error (E_ERR) SR1V[5]: Provides the default state for the Erase Error Status in SR1V[5]. This bit is not user programmable. Block Protection (BP_NV2, BP_NV1, BP_NV0) SR1NV[4:2]: These bits define the main Flash array area to be software-protected against program and erase commands. The BP bits are selected as either volatile or non-volatile, depending on the state of the BP non-volatile bit (BPNV_O) in the configuration register CR1NV[3]. When CR1NV[3]=0 the non-volatile version of the BP bits (SR1NV[4:2]) are used to control Block Protection and the WRR command writes SR1NV[4:2] and updates SR1V[4:2] to the same value. When CR1NV[3]=1 the volatile version of the BP bits (SR1V[4:2]) are used to control Block Protection and the WRR command writes SR1V[4:2] and does not affect SR1NV[4:2]. When one or more of the BP bits is set to 1, the relevant memory area is protected against program and erase. The Bulk Erase (BE) command can be executed only when the BP bits are cleared to 0's. See Section 10.3, Block Protection on page 65 for a description of how the BP bit values select the memory array area protected. The non-volatile version of the BP bits have the same non-volatile endurance as the main Flash array. Write Enable Latch Default (WEL_D) SR1NV[1]: Provides the default state for the WEL Status in SR1V[1]. This bit is programmed by Cypress and is not user programmable. Write In Progress Default (WIP_D) SR1NV[0]: Provides the default state for the WIP Status in SR1V[0]. This bit is programmed by Cypress and is not user programmable. 9.6.1.2 Status Register 1 Volatile (SR1V) Related Commands: Read Status Register (RDSR1 05h), Write Registers (WRR 01h), Write Enable (WREN 06h), Write Disable (WRDI 04h), Clear Status Register (CLSR 30h or 82h), Read Any Register (RDAR 65h), Write Any Register (WRAR 71h). This is the register displayed by the RDSR1 command. Table 9.11 Status Register-1 Volatile (SR1V) Bits Field Name Function Type 7 SRWD Status Register Write Disable Volatile Read Only Volatile copy of SR1NV[7]. 6 P_ERR Programming Error Occurred Volatile Read Only 1 = Error occurred 0 = No Error 5 E_ERR Erase Error Occurred Volatile Read Only 1= Error occurred 0 = No Error 4 BP2 3 BP1 Volatile 2 BP0 Block Protection Volatile 1 WEL Write Enable Latch 0 WIP Write in Progress Volatile Volatile Read Only Default State SR1NV Description Protects selected range of sectors (Block) from Program or Erase when the BP bits are configured as volatile (CR1NV[3]=1). Volatile copy of SR1NV[4:2] when BP bits are configured as non-volatile. User writable when BP bits are configured as volatile. 1 = Device accepts Write Registers (WRR and WRAR), program, or erase commands 0 = Device ignores Write Registers (WRR and WRAR), program, or erase commands This bit is not affected by WRR or WRAR, only WREN and WRDI commands affect this bit. 1= Device Busy, an embedded operation is in progress such as program or erase 0 = Ready Device is in standby mode and can accept commands This bit is not affected by WRR or WRAR, it only provides WIP status. Status Register Write (SRWD) SR1V[7]: SRWD is a volatile copy of SR1NV[7]. This bit tracks any changes to the non-volatile version of this bit. Program Error (P_ERR) SR1V[6]: The Program Error Bit is used as a program operation success or failure indication. When the Program Error bit is set to a "1" it indicates that there was an error in the last program operation. This bit will also be set when the user attempts to program within a protected main memory sector, or program within a locked OTP region. When the Program Error bit is set to a "1" this bit can be cleared to zero with the Clear Status Register (CLSR) command. This is a read-only bit and is not affected by the WRR or WRAR commands. Erase Error (E_ERR) SR1V[5]: The Erase Error Bit is used as an Erase operation success or failure indication. When the Erase Error bit is set to a "1" it indicates that there was an error in the last erase operation. This bit will also be set when the user attempts to erase an individual protected main memory sector. The Bulk Erase command will not set E_ERR if a protected sector is found during the command execution. When the Erase Error bit is set to a "1" this bit can be cleared to zero with the Clear Status Register (CLSR) command. This is a read-only bit and is not affected by the WRR or WRAR commands. Block Protection (BP2, BP1, BP0) SR1V[4:2]: These bits define the main Flash array area to be software-protected against program and erase commands. The BP bits are selected as either volatile or non-volatile, depending on the state of the BP Document Number: 002-03631 Rev. *C Page 50 of 147 PRELIMINARY S25FS064S non-volatile bit (BPNV_O) in the configuration register CR1NV[3]. When CR1NV[3]=0 the non-volatile version of the BP bits (SR1NV[4:2]) are used to control Block Protection and the WRR command writes SR1NV[4:2] and updates SR1V[4:2] to the same value. When CR1NV[3]=1 the volatile version of the BP bits (SR1V[4:2]) are used to control Block Protection and the WRR command writes SR1V[4:2] and does not affect SR1NV[4:2]. When one or more of the BP bits is set to 1, the relevant memory area is protected against program and erase. The Bulk Erase (BE) command can be executed only when the BP bits are cleared to 0's. See Section 10.3, Block Protection on page 65 for a description of how the BP bit values select the memory array area protected. Write Enable Latch (WEL) SR1V[1]: The WEL bit must be set to 1 to enable program, write, or erase operations as a means to provide protection against inadvertent changes to memory or register values. The Write Enable (WREN) command execution sets the Write Enable Latch to a "1" to allow any program, erase, or write commands to execute afterwards. The Write Disable (WRDI) command can be used to set the Write Enable Latch to a "0" to prevent all program, erase, and write commands from execution. The WEL bit is cleared to 0 at the end of any successful program, write, or erase operation. Following a failed operation the WEL bit may remain set and should be cleared with a WRDI command following a CLSR command. After a power down / power up sequence, hardware reset, or software reset, the Write Enable Latch is set to a "0" The WRR or WRAR command does not affect this bit. Write In Progress (WIP) SR1V[0]: Indicates whether the device is performing a program, write, erase operation, or any other operation, during which a new operation command will be ignored. When the bit is set to a "1" the device is busy performing an operation. While WIP is "1", only Read Status (RDSR1 or RDSR2), Read Any Register (RDAR), Erase Suspend (ERSP), Program Suspend (PGSP), Clear Status Register (CLSR), and Software Reset (RESET) commands are accepted. ERSP and PGSP will only be accepted if memory array erase or program operations are in progress. The status register E_ERR and P_ERR bits are updated while WIP =1. When P_ERR or E_ERR bits are set to one, the WIP bit will remain set to one indicating the device remains busy and unable to receive new operation commands. A Clear Status Register (CLSR) command must be received to return the device to standby mode. When the WIP bit is cleared to 0 no operation is in progress. This is a read-only bit. 9.6.2 Status Register 2 Volatile (SR2V) Related Commands: Read Status Register 2 (RDSR2 07h), Read Any Register (RDAR 65h). Status Register 2 does not have user programmable non-volatile bits, all defined bits are volatile read only status. The default state of these bits are set by hardware. Table 9.12 Status Register-2 Volatile (SR2V) Bits Field Name Function 7 RFU Reserved Type Default State 0 Reserved for Future Use Description 6 RFU Reserved 0 Reserved for Future Use 5 RFU Reserved 0 Reserved for Future Use 4 RFU Reserved 0 Reserved for Future Use 3 RFU Reserved 0 Reserved for Future Use 2 ESTAT Erase Status Volatile Read Only 0 1 = Sector Erase Status command result = Erase Completed 0 = Sector Erase Status command result = Erase Not Completed 1 ES Erase Suspend Volatile Read Only 0 1 = In erase suspend mode. 0 = Not in erase suspend mode. 0 PS Program Suspend Volatile Read Only 0 1 = In program suspend mode. 0 = Not in program suspend mode. Erase Status (ESTAT) SR2V[2]: The Erase Status bit indicates whether the sector, selected by an immediately preceding Erase status command, completed the last erase command on that sector. The Erase Status command must be issued immediately before reading SR2V to get valid erase status. Reading SR2V during a program or erase suspend does not provide valid erase status. The erase status bit can be used by system software to detect any sector that failed its last erase operation. This can be used to detect erase operations failed due to loss of power during the erase operation. Erase Suspend (ES) SR2V[1]: The Erase Suspend bit is used to determine when the device is in Erase Suspend mode. This is a status bit that cannot be written by the user. When Erase Suspend bit is set to "1", the device is in erase suspend mode. When Erase Suspend bit is cleared to "0", the device is not in erase suspend mode. Refer to Section 11.6.5, Erase or Program Suspend (EPS 85h, 75h, B0h) on page 109 for details about the Erase Suspend/Resume commands. Program Suspend (PS) SR2V[0]: The Program Suspend bit is used to determine when the device is in Program Suspend mode. This is a status bit that cannot be written by the user. When Program Suspend bit is set to "1", the device is in program suspend Document Number: 002-03631 Rev. *C Page 51 of 147 PRELIMINARY S25FS064S mode. When the Program Suspend bit is cleared to "0", the device is not in program suspend mode. Refer to Section 11.6.5, Erase or Program Suspend (EPS 85h, 75h, B0h) on page 109 for details. 9.6.3 Configuration Register 1 Configuration register 1 controls certain interface and data protection functions. The register bits can be changed using the WRR command with sixteen input cycles or with the WRAR command. 9.6.3.1 Configuration Register 1 Non-volatile (CR1NV) Related Commands: Write Registers (WRR 01h), Read Any Register (RDAR 65h), Write Any Register (WRAR 71h). Table 9.13 Configuration Register 1 Non-volatile (CR1NV) Bits Field Name 7 RFU 6 RFU 5 4 Default State Description Function Type Reserved for Future Use Non-volatile TBPROT_O Configures Start of Block Protection OTP 0 RFU Reserved for Future Use RFU 0 Reserved 3 BPNV_O Configures BP2-0 in Status Register OTP 0 1 = Volatile 0 = Non-Volatile 2 TBPARM_O Configures Parameter Sectors location OTP 0 1 = 4 KB physical sectors at top, (high address) 0 = 4 KB physical sectors at bottom (Low address) RFU in uniform sector configuration. 1 QUAD_NV Quad Non-Volatile Non-Volatile 0 Provides the default state for the QUAD bit. FREEZE Default Non-Volatile Read Only 0 Provides the default state for the Freeze bit. Not user programmable. 0 FREEZE_D 0 0 Reserved 1 = BP starts at bottom (Low address) 0 = BP starts at top (High address) Top or Bottom Protection (TBPROT_O) CR1NV[5]: This bit defines the operation of the Block Protection bits BP2, BP1, and BP0 in the Status Register. As described in the status register section, the BP2-0 bits allow the user to optionally protect a portion of the array, ranging from 1/64, 1/4, 1/2, etc., up to the entire array. When TBPROT_O is set to a "0" the Block Protection is defined to start from the top (maximum address) of the array. When TBPROT_O is set to a "1" the Block Protection is defined to start from the bottom (zero address) of the array. The TBPROT_O bit is OTP and set to a "0" when shipped from Cypress. If TBPROT_O is programmed to 1, writing the bit with a zero does not change the value or set the Program Error bit (P_ERR in SR1V[6]). The desired state of TBPROT_O must be selected during the initial configuration of the device during system manufacture; before the first program or erase operation on the main Flash array. TBPROT_O must not be programmed after programming or erasing is done in the main Flash array. Block Protection Non-Volatile (BPNV_O) CR1NV[3]: The BPNV_O bit defines whether the BP_NV 2-0 bits or the BP 2-0 bits in the Status Register are selected to control the Block Protection feature. The BPNV_O bit is OTP and cleared to a "0" with the BP_NV bits cleared to "000" when shipped from Cypress. When BPNV_O is set to a "0" the BP_NV 2-0 bits in the Status Register are selected to control the block protection and are written by the WRR command. The time required to write the BP_NV bits is tW. When BPNV is set to a "1" the BP2-0 bits in the Status Register are selected to control the block protection and the BP_NV 2-0 bits will be programmed to binary "111". This will cause the BP 2-0 bits to be set to binary 111 after POR, hardware reset, or command reset. When BPNV is set to a 1, the WRR command writes only the volatile version of the BP bits (SR1V[4:2]). The non-volatile version of the BP bits (SR1NV[4:2]) are no longer affected by the WRR command. This allows the BP bits to be written an unlimited number of times because they are volatile and the time to write the volatile BP bits is the much faster tCS volatile register write time. If BPNV_O is programmed to 1, writing the bit with a zero does not change the value or set the Program Error bit (P_ERR in SR1V[6]). TBPARM_O CR1NV[2]: TBPARM_O defines the logical location of the parameter block. The parameter block consists of eight 4 KB parameter sectors, which replace a 32 KB portion of the highest or lowest address sector. When TBPARM_O is set to a "1" the parameter block is in the top of the memory array address space. When TBPARM_O is set to a "0" the parameter block is at the Bottom of the array. TBPARM_O is OTP and set to a "0" when it ships from Cypress. If TBPARM_O is programmed to 1, writing the bit with a zero does not change the value or set the Program Error bit (P_ERR in SR1V[6]). Document Number: 002-03631 Rev. *C Page 52 of 147 PRELIMINARY S25FS064S The desired state of TBPARM_O must be selected during the initial configuration of the device during system manufacture; before the first program or erase operation on the main Flash array. TBPARM_O must not be programmed after programming or erasing is done in the main Flash array. TBPROT_O can be set or cleared independent of the TBPARM_O bit. Therefore, the user can elect to store parameter information from the bottom of the array and protect boot code starting at the top of the array, or vice versa. Or, the user can elect to store and protect the parameter information starting from the top or bottom together. When the memory array is configured as uniform sectors, the TBPARM_O bit is Reserved for Future Use (RFU) and has no effect because all sectors are uniform size. Quad Data Width Non-volatile (QUAD_NV) CR1NV[1]: Provides the default state for the QUAD bit in CR1V[1]. The WRR or WRAR command affects this bit. Non-volatile selection of QPI mode, by programming CR2NV[6] =1, will also program QUAD_NV =1 to change the non-volatile default to Quad data width mode. While QPI mode is selected by CR2V[6]=1, the Quad_NV bit cannot be cleared to 0. Freeze Protection Default (FREEZE) CR1NV[0]: Provides the default state for the FREEZE bit in CR1V[0]. This bit is not user programmable. 9.6.3.2 Configuration Register 1 Volatile (CR1V) Related Commands: Read Configuration Register (RDCR 35h), Write Registers (WRR 01h), Read Any Register (RDAR 65h), Write Any Register (WRAR 71h). This is the register displayed by the RDCR command. Table 9.14 Configuration Register 1 Volatile (CR1V) Bits Field Name 7 RFU 6 RFU 5 Default State Description Function Type Reserved for Future Use Volatile TBPROT Volatile copy of TBPROT_O Volatile Read Only 4 RFU RFU RFU 3 BPNV Volatile copy of BPNV_O Volatile Read Only 2 TBPARM Volatile copy of TBPARM_O Volatile Read Only 1 QUAD Quad I/O mode Volatile 1 = Quad 0 = Dual or Serial 0 FREEZE Lock-down Block Protection until next power cycle Volatile Lock current state of Block Protection control bits, and OTP regions 1 = Block Protection and OTP locked 0 = Block Protection and OTP un-locked Reserved Not user writable See CR1NV[5] TBPROT_O Reserved for Future Use CR1NV Not user writable See CR1NV[3] BPNV_O Not user writable See CR1NV[2] TBPARM_O TBPROT, BPNV, and TBPARM CR1V[5,3,2]: These bits are volatile copies of the related non-volatile bits of CR1NV. These bits track any changes to the related non-volatile version of these bits. Quad Data Width (QUAD) CR1V[1]: When set to 1, this bit switches the data width of the device to 4 bit - Quad mode. That is, WP# becomes IO2 and IO3_RESET# becomes an active I/O signal when CS# is low or the RESET# input when CS# is high. The WP# input is not monitored for its normal function and is internally set to high (inactive). The commands for Serial, and Dual I/O Read still function normally but, there is no need to drive the WP# input for those commands when switching between commands using different data path widths. Similarly, there is no requirement to drive the IO3_RESET# during those commands (while CS# is low). The QUAD bit must be set to one when using the Quad I/O Read, DDR Quad I/O Read, QPI mode (CR2V[6] = 1), and Read Quad ID commands. While QPI mode is selected by CR2V[6]=1, the Quad bit cannot be cleared to 0. The WRR command writes the nonvolatile version of the Quad bit (CR1NV[1]), which also causes an update to the volatile version CR1V[1]. The WRR command can not write the volatile version CR1V[1] without first affecting the non-volatile version CR1NV[1]. The WRAR command must be used when it is desired to write the volatile Quad bit CR1V[1] without affecting the non-volatile version CR1NV[1]. Freeze Protection (FREEZE) CR1V[0]: The Freeze Bit, when set to 1, locks the current state of the Block Protection control bits and OTP area: BPNV_2-0 bits in the non-volatile Status Register 1 (SR1NV[4:2]) BP 2-0 bits in the volatile Status Register 1 (SR1V[4:2]) Document Number: 002-03631 Rev. *C Page 53 of 147 PRELIMINARY S25FS064S TBPROT_O, TBPARM_O, and BPNV_O bits in the non-volatile Configuration Register (CR1NV[53, 2]) TBPROT, TBPARM, and BPNV bits in the volatile Configuration Register (CR1V[5, 3, 2]) are indirectly protected in that they are shadows of the related CR1NV OTP bits and are read only The entire OTP memory space Any attempt to change the above listed bits while FREEZE = 1 is prevented: The WRR command does not affect the listed bits and no error status is set. The WRAR command does not affect the listed bits and no error status is set. The OTPP command, with an address within the OTP area, fails and the P-ERR status is set. As long as the FREEZE bit remains cleared to logic 0 the Block Protection control bits and FREEZE are writable, and the OTP address space is programmable. Once the FREEZE bit has been written to a logic 1 it can only be cleared to a logic 0 by a power-off to power-on cycle or a hardware reset. Software reset will not affect the state of the FREEZE bit. The CR1V[0] FREEZE bit is volatile and the default state of FREEZE after power-on comes from FREEZE_D in CR1NV[0]. The FREEZE bit can be set in parallel with updating other values in CR1V by a single WRR or WRAR command. The FREEZE bit does not prevent the WRR or WRAR commands from changing the SRWD_NV (SR1NV[7]), Quad_NV (CR1NV[1]), or QUAD (CR1V[1]) bits. 9.6.4 Configuration Register 2 Configuration register 2 controls certain interface functions. The register bits can be read and changed using the Read Any Register and Write Any Register commands. The non-volatile version of the register provides the ability to set the POR, hardware reset, or software reset state of the controls. These configuration bits are OTP and may only have their default state changed to the opposite value one time during system configuration. The volatile version of the register controls the feature behavior during normal operation. 9.6.4.1 Configuration Register 2 Non-volatile (CR2NV) Related Commands: Read Any Register (RDAR 65h), Write Any Register (WRAR 71h). Table 9.15 Configuration Register 2 Non-volatile (CR2NV) Type Default State Description Bits Field Name Function 7 AL_NV Address Length 0 1= 4 byte address 0= 3 byte address 6 QA_NV QPI 0 1= Enabled -- QPI (4-4-4) protocol in use 0= Disabled -- Legacy SPI protocols in use, instruction is always serial on SI 5 IO3R_NV IO3 Reset 0 1= Enabled -- IO3 is used as RESET# input when CS# is high or Quad Mode is disabled CR1V[1]=1 0= Disabled -- IO3 has no alternate function, hardware reset is disabled. 4 RFU Reserved 0 Reserved For Future Use OTP 3 1 2 0 1 RL_NV Read Latency 0 0 0 to 15 latency (dummy) cycles following read address or continuous mode bits. Note that bit 3 has a default value of 1 and may be programmed one time to 0 but cannot be returned to 1. 0 Address Length Non-volatile CR2NV[7]: This bit controls the POR, hardware reset, or software reset state of the expected address length for all commands that require address and are not fixed 3 byte only or 4 Byte (32 bit) only address. Most commands that need an address are legacy SPI commands that traditionally used 3 byte (24 bit) address. For device densities greater than 128 Mbit a 4 Byte address is required to access the entire memory array. The address length configuration bit is used to change most 3 Byte address commands to expect 4 Byte address. See Table 11.1, FS-S Family Command Set (sorted by function) on page 76 for command address length. The use of 4 Byte address length also applies to the 128 Mbit member of the FS-S Family so that the same 4 Byte address hardware and software interface may be used for all family members to simplify migration between Document Number: 002-03631 Rev. *C Page 54 of 147 PRELIMINARY S25FS064S densities. The 128 Mbit member of the FS-S Family simply ignores the content of the fourth, high order, address byte. This nonvolatile Address Length configuration bit enables the device to start immediately (boot) in 4 Byte address mode rather than the legacy 3 Byte address mode. QPI Non-volatile CR2NV[6]: This bit controls the POR, hardware reset, or software reset state of the expected instruction width for all commands. Legacy SPI commands always send the instruction one bit wide (serial I/O) on the SI (IO0) signal. The FS-S Family also supports the QPI mode in which all transfers between the host system and memory are 4 bits wide on IO0 to IO3, including all instructions. This non-volatile QPI configuration bit enables the device to start immediately (boot) in QPI mode rather than the legacy serial instruction mode. When this bit is programmed to QPI mode, the QUAD_NV bit is also programmed to Quad mode (CR1NV[1]=1). The recommended procedure for moving to QPI mode is to first use the WRAR command to set CR2V[6]=1, QPI mode. The volatile register write for QPI mode has a short and well defined time (tCS) to switch the device interface into QPI mode. Following commands can then be immediately sent in QPI protocol. The WRAR command can be used to program CR2NV[6]=1, followed by polling of SR1V[0] to know when the programming operation is completed. Similarly, to exit QPI mode, the WRAR command is used to clear CR2V[6]=0. CR2NV[6] cannot be erased to 0 because it is OTP. IO3 Reset Non-volatile CR2NV[5]: This bit controls the POR, hardware reset, or software reset state of the IO3 signal behavior. Most legacy SPI devices do not have a hardware reset input signal due to the limited signal count and connections available in traditional SPI device packages. The FS-S Family provides the option to use the IO3 signal as a hardware reset input when the IO3 signal is not in use for transferring information between the host system and the memory. This non-volatile IO3 Reset configuration bit enables the device to start immediately (boot) with IO3 enabled for use as a RESET# signal. Read Latency Non-volatile CR2NV[3:0]: This bit controls the POR, hardware reset, or software reset state of the read latency (dummy cycle) delay in all variable latency read commands. The following read commands have a variable latency period between the end of address or mode and the beginning of read data returning to the host: Fast Read Dual Output Read Quad Output Read Dual I/O Read Quad I/O Read DDR Quad I/O Read OTPR ECCRD RDAR This non-volatile read latency configuration bit sets the number of read latency (dummy cycles) in use so the device can start immediately (boot) with an appropriate read latency for the host system. Document Number: 002-03631 Rev. *C Page 55 of 147 PRELIMINARY S25FS064S Table 9.16 Latency Code (Cycles) Versus Frequency Read Command Maximum Frequency (MHz) Fast Read (1-1-1)Dual Output (1-1-2) Quad Output (1-1-4) Latency Code OTPR (1-1-1) Dual I/O (1-2-2) ECCRD (1-1-1) Quad I/O (1-4-4) QPI (4-4-4) ECCRD (4-4-4) DDR Quad I/O (1-4-4) DDR QPI (4-4-4) RDAR (1-1-1) RDAR (4-4-4) Mode Cycles = 0 Mode Cycles = 4 Mode Cycles = 2 Mode Cycles = 0 Mode Cycles = 1 0 50 80 40 16 N/A 1 66 92 53 26 22 2 80 104 66 40 34 3 92 116 80 53 45 4 104 129 92 66 57 68 5 116 133 104 80 6 129 133 116 92 80 7 133 133 129 104 80 8 133 133 133 116 80 9 133 133 133 129 80 10 133 133 133 133 80 11 133 133 133 133 80 12 133 133 133 133 80 13 133 133 133 133 80 14 133 133 133 133 80 15 133 133 133 133 80 Notes: 1. SCK frequency > 133 MHz SDR, or 80MHz DDR is not supported by this family of devices. 2. The Dual I/O, Quad I/O, and QPI, DDR Quad I/O, and DDR QPI, command protocols include Continuous Read Mode bits following the address. The clock cycles for these bits are not counted as part of the latency cycles shown in the table. Example: the legacy Quad I/O command has 2 Continuous Read Mode cycles following the address. Therefore, the legacy Quad I/O command without additional read latency is supported only up to the frequency shown in the table for a read latency of 0 cycles. By increasing the variable read latency the frequency of the Quad I/O command can be increased to allow operation up to the maximum supported 133 MHz frequency. 3. Other read commands have fixed latency, e.g. Read always has zero read latency, RSFDP always has eight cycles of latency and RUID always has 32 cycles of latency, RUID always four dummy bytes or 16 dummy bytes in QPI (32 clock cycles). Document Number: 002-03631 Rev. *C Page 56 of 147 PRELIMINARY 9.6.4.2 S25FS064S Configuration Register 2 Volatile (CR2V) Related Commands: Read Any Register (RDAR 65h), Write Any Register (WRAR 71h), 4BAM. Table 9.17 Configuration Register 2 Volatile (CR2V) Type Default State Bits Field Name Function Description 7 AL Address Length 6 QA QPI 1= Enabled -- QPI (4-4-4) protocol in use 0= Disabled -- Legacy SPI protocols in use, instruction is always serial on SI 5 IO3R_S IO3 Reset 1= Enabled -- IO3 is used as RESET# input when CS# is high or Quad Mode is disabled CR1V[1]=1 0= Disabled -- IO3 has no alternate function, hardware reset is disabled. 4 RFU Reserved RL Read Latency 1= 4 byte address 0= 3 byte address Volatile CR2NV Reserved for Future Use 3 2 1 0 to 15 latency (dummy) cycles following read address or continuous mode bits 0 Address Length CR2V[7]: This bit controls the expected address length for all commands that require address and are not fixed 3 byte only or 4 Byte (32 bit) only address. See Table 11.1, FS-S Family Command Set (sorted by function) on page 76 for command address length. This volatile Address Length configuration bit enables the address length to be changed during normal operation. The four byte address mode (4BAM) command directly sets this bit into 4 byte address mode. QPI CR2V[6]: This bit controls the expected instruction width for all commands. This volatile QPI configuration bit enables the device to enter and exit QPI mode during normal operation. When this bit is set to QPI mode, the QUAD bit is also set to Quad mode (CR1V[1]=1). When this bit is cleared to legacy SPI mode, the QUAD bit is not affected. IO3 Reset CR2V[5]: This bit controls the IO3_RESET# signal behavior. This volatile IO3 Reset configuration bit enables the use of IO3 as a RESET# input during normal operation. Read Latency CR2V[3:0]: This bit controls the read latency (dummy cycle) delay in variable latency read commands These volatile configuration bits enable the user to adjust the read latency during normal operation to optimize the latency for different commands or, at different operating frequencies, as needed. 9.6.5 Configuration Register 3 Configuration register 3 controls certain command behaviors. The register bits can be read and changed using the Read Any Register and Write Any Register commands. The non-volatile register provides the POR, hardware reset, or software reset state of the controls. These configuration bits are OTP and may be programmed to their opposite state one time during system configuration if needed. The volatile version of configuration register 3 allows the configuration to be changed during system operation or testing. Document Number: 002-03631 Rev. *C Page 57 of 147 PRELIMINARY 9.6.5.1 S25FS064S Configuration Register 3 Non-volatile (CR3NV) Related Commands: Read Any Register (RDAR 65h), Write Any Register (WRAR 71h). Table 9.18 Configuration Register 3 Non-volatile (CR3NV) Type Default State Bits Field Name Function Description 7 RFU Reserved 0 6 RFU Reserved 0 Reserved for Future Use Reserved for Future Use 5 BC_NV Blank Check 0 1= Blank Check during erase enabled 0= Blank Check disabled 4 02h_NV Page Buffer Wrap 0 1= Wrap at 512 Bytes 0= Wrap at 256 Bytes 3 20h_NV 4KB Erase 0 1= 4KB Erase disabled (Uniform Sector Architecture) 0= 4KB Erase enabled (Hybrid Sector Architecture) 2 30h_NV Clear Status / Resume Select 0 1= 30h is Erase or Program Resume command 0= 30h is clear status command 1 D8h_NV Block Erase Size 0 1= 256KB Erase 0= 64KB Erase 0 F0h_NV Legacy Software Reset Enable 0 1= F0h Software Reset is enabled 0= F0h Software Reset is disabled (ignored) OTP Blank Check Non-volatile CR3NV[5]: This bit controls the POR, hardware reset, or software reset state of the blank check during erase feature. 02h Non-volatile CR3NV[4]: This bit controls the POR, hardware reset, or software reset state of the page programming buffer address wrap point. 20h Non-volatile CR3NV[3]: This bit controls the POR, hardware reset, or software reset state of the availability of 4 KB parameter sectors in the main Flash array address map. 30h Non-volatile CR3NV[2]: This bit controls the POR, hardware reset, or software reset state of the 30h instruction code is used. D8h Non-volatile CR3NV[1]: This bit controls the POR, hardware reset, or software reset state of the configuration for the size of the area erased by the D8h or DCh instructions in the FS-S Family. F0h Non-volatile CR3NV[0]: This bit controls the POR, hardware reset, or software reset state of the availability of the CypressCypress legacy FL-S family software reset instruction. Document Number: 002-03631 Rev. *C Page 58 of 147 PRELIMINARY 9.6.5.2 S25FS064S Configuration Register 3 Volatile (CR3V) Related Commands: Read Any Register (RDAR 65h), Write Any Register (WRAR 71h). Table 9.19 Configuration Register 3 Volatile (CR3V) Bits Field Name Function 7 RFU Reserved 6 RFU Reserved 5 BC_V Blank Check 4 02h_V Page Buffer Wrap 3 20h_V 4KB Erase 30h_V Clear Status / Resume Select 1 D8h_V Block Erase Size 0 F0h_V Legacy Software Reset Enable 2 Type Default State Description Reserved for Future Use Reserved for Future Use 1= Blank Check during erase enabled 0= Blank Check disabled Volatile 1= Wrap at 512 Bytes 0= Wrap at 256 Bytes Volatile, Read Only CR3NV 1= 4KB Erase disabled (Uniform Sector Architecture) 0= 4KB Erase enabled (Hybrid Sector Architecture) 1= 30h is Erase or Program Resume command 0= 30h is clear status command Volatile 1= 256KB Erase 0= 64KB Erase 1= F0h Software Reset is enabled 0= F0h Software Reset is disabled (ignored) Blank Check Volatile CR3V[5]: This bit controls the blank check during erase feature. When this feature is enabled an erase command first evaluates the erase status of the sector. If the sector is found to have not completed its last erase successfully, the sector is unconditionally erased. If the last erase was successful, the sector is read to determine if the sector is still erased (blank). The erase operation is started immediately after finding any programmed zero. If the sector is already blank (no programmed zero bit found) the remainder of the erase operation is skipped. This can dramatically reduce erase time when sectors being erased do not need the erase operation. When enabled the blank check feature is used within the parameter erase, sector erase, and bulk erase commands. When blank check is disabled an erase command unconditionally starts the erase operation. 02h Volatile CR3V[4]: This bit controls the page programming buffer address wrap point. Legacy SPI devices generally have used a 256 Byte page programming buffer and defined that if data is loaded into the buffer beyond the 255 Byte location, the address at which additional bytes are loaded would be wrapped to address zero of the buffer. The FS-S Family provides a 512 Byte page programming buffer that can increase programming performance. For legacy software compatibility, this configuration bit provides the option to continue the wrapping behavior at the 256 Byte boundary or to enable full use of the available 512 Byte buffer by not wrapping the load address at the 256 Byte boundary. 20h Volatile CR3V[3]: This bit controls the availability of 4 KB parameter sectors in the main Flash array address map. The parameter sectors can overlay the highest or lowest 32 KB address range of the device or they can be removed from the address map so that all sectors are uniform size. This bit shall not be written to a value different than the value of CR3NV[3]. The value of CR3V[3] may only be changed by writing CR3NV[3]. 30h Volatile CR3V[2]: This bit controls how the 30h instruction code is used. The instruction may be used as a clear status command or as an alternate program / erase resume command. This allows software compatibility with either Cypress legacy SPI devices or alternate vendor devices. D8h Volatile CR3V[1]: This bit controls the area erased by the D8h or DCh instructions in the FS-S Family. The instruction can be used to erase 64 KB physical sectors or 256 KB size and aligned blocks. The option to erase 256 KB blocks in the lower density family members allows for consistent software behavior across all densities that can ease migration between different densities. F0h Volatile CR3V[0]: This bit controls the availability of the Cypress legacy FL-S family software reset instruction. The FS-S Family supports the industry common 66h + 99h instruction sequence for software reset. This configuration bit allows the option to continue use of the legacy F0h single command for software reset. 9.6.6 Configuration Register 4 Configuration register 4 controls the main Flash array read commands burst wrap behavior. The burst wrap configuration does not affect commands reading from areas other than the main Flash array e.g. read commands for registers or OTP array. The nonDocument Number: 002-03631 Rev. *C Page 59 of 147 PRELIMINARY S25FS064S volatile version of the register provides the ability to set the start up (boot) state of the controls as the contents are copied to the volatile version of the register during the POR, hardware reset, or software reset. The volatile version of the register controls the feature behavior during normal operation. The register bits can be read and changed using the Read Any Register and Write Any Register commands. The volatile version of the register can also be written by the Set Burst Length (C0h) command. 9.6.6.1 Configuration Register 4 Non-volatile (CR4NV) Related Commands: Read Any Register (RDAR 65h), Write Any Register (WRAR 71h). Table 9.20 Configuration Register 4 Non-volatile (CR4NV) Bits Field Name Function OI_O Output Impedance Type 7 6 Description 0 0 5 See Table 9.21, Output Impedance Control on page 60 0 4 WE_O Wrap Enable 3 RFU Reserved 2 RFU Reserved OTP 1 0 Default State WL_O Wrap Length 1 0= Wrap Enabled 1= Wrap Disabled 0 Reserved for Future Use 0 Reserved for Future Use 0 00 = 8-byte wrap 01= 16 byte wrap 10= 32 byte wrap 11= 64 byte wrap 0 Output Impedance Non-volatile CR4NV[7:5]: These bits control the POR, hardware reset, or software reset state of the IO signal output impedance (drive strength). Multiple drive strength are available to help match the output impedance with the system printed circuit board environment to minimize overshoot and ringing. These non-volatile output impedance configuration bits enable the device to start immediately (boot) with the appropriate drive strength. Table 9.21 Output Impedance Control CR4NV[7:5] Impedance Selection Typical Impedance to VSS (Ohms) Typical Impedance to VDD (Ohms) 000 47 45 001 124 105 010 71 64 011 47 45 100 34 35 101 26 28 110 22 24 111 18 21 Notes Factory Default Wrap Enable Non-volatile CR4NV[4]: This bit controls the POR, hardware reset, or software reset state of the wrap enable. The commands affected by Wrap Enable are: Quad I/O Read, DDR Quad I/O Read, Quad Output Read and QPI Read. This configuration bit enables the device to start immediately (boot) in wrapped burst read mode rather than the legacy sequential read mode. Wrap Length Non-volatile CR4NV[1:0]: These bits controls the POR, hardware reset, or software reset state of the wrapped read length and alignment. These non-volatile configuration bits enable the device to start immediately (boot) in wrapped burst read mode rather than the legacy sequential read mode. Document Number: 002-03631 Rev. *C Page 60 of 147 PRELIMINARY 9.6.6.2 S25FS064S Configuration Register 4 Volatile (CR4V) Related Commands: Read Any Register (RDAR 65h), Write Any Register (WRAR 71h), Set Burst Length (SBL C0h). Table 9.22 Configuration Register 4 Volatile (CR4V) Bits Field Name Function OI Output Impedance 4 WE Wrap Enable 3 RFU Reserved 2 RFU Reserved Type Default State Description 7 6 See Table 9.21, Output Impedance Control on page 60 5 0= Wrap Enabled 1= Wrap Disabled Volatile CR4NV Reserved for Future Use 1 0 WL Reserved for Future Use 00 = 8-byte wrap 01= 16 byte wrap 10= 32 byte wrap 11= 64 byte wrap Wrap Length Output Impedance CR2V[7:5]: These bits control the IO signal output impedance (drive strength). This volatile output impedance configuration bit enables the user to adjust the drive strength during normal operation. Wrap Enable CR4V[4]: This bit controls the burst wrap feature. This volatile configuration bit enables the device to enter and exit burst wrapped read mode during normal operation. Wrap Length CR4V[1:0]: These bits controls the wrapped read length and alignment during normal operation. These volatile configuration bits enable the user to adjust the burst wrapped read length during normal operation. 9.6.7 ECC Status Register (ECCSR) Related Commands: ECC Read (ECCRD 18h or 19h). ECCSR does not have user programmable non-volatile bits. All defined bits are volatile read only status. The default state of these bits are set by hardware. See Section 11.5.1.1, Automatic ECC on page 103. The status of ECC in each ECC unit is provided by the 8-bit ECC Status Register (ECCSR). The ECC Register Read command is written followed by an ECC unit address. The contents of the status register then indicates, for the selected ECC unit, whether there is an error in the ECC unit eight bit error correction code, the ECC unit of 16 Bytes of data, or that ECC is disabled for that ECC unit. Table 9.23 ECC Status Register (ECCSR) Bits Field Name Function 7 to 3 RFU Reserved 2 EECC Error in ECC 1 EECCD 0 ECCDI Type Default State Description 0 Reserved for Future Use Volatile, Read only 0 1 = Single Bit Error found in the ECC unit eight bit error correction code 0 = No error. Error in ECC unit data Volatile, Read only 0 1 = Single Bit Error corrected in ECC unit data. 0 = No error. ECC Disabled Volatile, Read only 0 1 = ECC is disabled in the selected ECC unit. 0 = ECC is enabled in the selected ECC unit. ECCSR[2] = 1 indicates an error was corrected in the ECC. ECCSR[1] = 1 indicates an error was corrected in the ECC unit data. ECCSR[0] = 1 indicates the ECC is disabled. The default state of "0" for all these bits indicates no failures and ECC is enabled. ECCSR[7:3] are reserved. These have undefined high or low values that can change from one ECC status read to another. These bits should be treated as "don't care" and ignored by any software reading status. 9.6.8 ASP Register (ASPR) Related Commands: ASP Read (ASPRD 2Bh) and ASP Program (ASPP 2Fh), Read Any Register (RDAR 65h), Write Any Register (WRAR 71h). Document Number: 002-03631 Rev. *C Page 61 of 147 PRELIMINARY S25FS064S The ASP register is a 16 bit OTP memory location used to permanently configure the behavior of Advanced Sector Protection (ASP) features. ASPR does not have user programmable volatile bits, all defined bits are OTP. The default state of the ASPR bits are programmed by Cypress. Table 9.24 ASP Register (ASPR) Bits Field Name Function Type Default State 15 to 9 RFU Reserved OTP 1 Reserved for Future Use Description 8 RFU Reserved OTP 1 Reserved for Future Use 7 RFU Reserved OTP 1 Reserved for Future Use 6 RFU Reserved OTP 1 Reserved for Future Use 5 RFU Reserved OTP 1 Reserved for Future Use 4 Reserved RFU 1 Reserved for Future Use 3 Reserved RFU 1 Reserved for Future Use 2 PWDMLB Password Protection Mode Lock Bit OTP 1 0 = Password Protection Mode permanently enabled. 1 = Password Protection Mode not permanently enabled. 1 PSTMLB Persistent Protection Mode Lock Bit OTP 1 0 = Persistent Protection Mode permanently enabled. 1 = Persistent Protection Mode not permanently enabled. Reserved RFU 1 Reserved for Future Use 0 Password Protection Mode Lock Bit (PWDMLB) ASPR[2]: When programmed to 0, the Password Protection Mode is permanently selected. Persistent Protection Mode Lock Bit (PSTMLB) ASPR[1]: When programmed to 0, the Persistent Protection Mode is permanently selected. PWDMLB (ASPR[2]) and PSTMLB (ASPR[1]) are mutually exclusive, only one may be programmed to zero. ASPR bits may only be programmed while ASPR[2:1] = 11b. Attempting to program ASPR bits when ASPR[2:1] is not = 11b will result in a programming error with P_ERR (SR1V[6]) set to 1. After the ASP protection mode is selected by programming ASPR[2:1] = 10b or 01b, the state of all ASPR bits are locked and permanently protected from further programming. Attempting to program ASPR[2:1] = 00b will result in a programming error with P_ERR (SR1V[6]) set to 1. Similarly, OTP configuration bits listed in the ASP Register description (Section 10.4.1, ASP Register on page 69), may only be programmed while ASPR[2:1] = 11b. The OTP configuration must be selected before selecting the ASP protection mode. The OTP configuration bits are permanently protected from further change when the ASP protection mode is selected. Attempting to program these OTP configuration bits when ASPR[2:1] is not = 11b will result in a programming error with P_ERR (SR1V[6]) set to 1. The ASP protection mode should be selected during system configuration to ensure that a malicious program does not select an undesired protection mode at a later time. By locking all the protection configuration via the ASP mode selection, later alteration of the protection methods by malicious programs is prevented. 9.6.9 Password Register (PASS) Related Commands: Password Read (PASSRD E7h) and Password Program (PASSP E8h), Read Any Register (RDAR 65h), Write Any Register (WRAR 71h). The PASS register is a 64 bit OTP memory location used to permanently define a password for the Advanced Sector Protection (ASP) feature. PASS does not have user programmable volatile bits, all defined bits are OTP. A volatile copy of PASS is used to satisfy read latency requirements but the volatile register is not user writable or further described. Table 9.25 Password Register (PASS) Bits 63 to 0 Field Name PWD Function Hidden Password Type OTP Default State Description FFFFFFFF-FFFFFFFFh Non-volatile OTP storage of 64 bit password. The password is no longer readable after the password protection mode is selected by programming ASP register bit 2 to zero. 9.6.10 PPB Lock Register (PPBL) Related Commands: PPB Lock Read (PLBRD A7h, PLBWR A6h), Read Any Register (RDAR 65h). Document Number: 002-03631 Rev. *C Page 62 of 147 PRELIMINARY S25FS064S PPBL does not have separate user programmable non-volatile bits, all defined bits are volatile read only status. The default state of the RFU bits is set by hardware. The default state of the PPBLOCK bit is defined by the ASP protection mode bits in ASPR[2:1]. There is no non-volatile version of the PPBL register. The PPBLOCK bit is used to protect the PPB bits. When PPBL[0] = 0, the PPB bits can not be programmed. Table 9.26 PPB Lock Register (PPBL) Bits Field Name Function Type Default State 7 to 1 RFU Reserved Volatile 00h 0 PPBLOCK Protect PPB Array Volatile Read Only ASPR[2:1] = 1xb = Persistent Protection Mode = 1 ASPR[2:1] = 01b = Password Protection Mode = 0 Description Reserved for Future Use 0 = PPB array protected 1 = PPB array may be programmed or erased. 9.6.11 PPB Access Register (PPBAR) Related Commands: PPB Read (PPBRD FCh or 4PPBRD E2h), PPB Program (PPBP FDh or 4PPBP E3h), PPB Erase (PPBE E4h). PPBAR does not have user writable volatile bits, all PPB array bits are non-volatile. The default state of the PPB array is erased to FFh by Cypress. There is no volatile version of the PPBAR register. Table 9.27 PPB Access Register (PPBAR) Bits Field Name Function Type Default State 7 to 0 PPB Read or Program per sector PPB Non-volatile FFh Description 00h = PPB for the sector addressed by the PPBRD or PPBP command is programmed to 0, protecting that sector from program or erase operations. FFh = PPB for the sector addressed by the PPBRD command is 1, not protecting that sector from program or erase operations. 9.6.12 DYB Access Register (DYBAR) Related Commands: DYB Read (DYBRD FAh or 4DYBRD E0h) and DYB Write (DYBWR FBh or 4DYBWR E1h). DYBAR does not have user programmable non-volatile bits, all bits are a representation of the volatile bits in the DYB array. The default state of the DYB array bits is set by hardware. There is no non-volatile version of the DYBAR register. Table 9.28 DYB Access Register (DYBAR) Bits Field Name Function Type 7 to 0 DYB Read or Write per sector DYB Volatile Default State Description 00h = DYB for the sector addressed by the DYBRD or DYBWR command is cleared to "0", protecting that sector from program or erase operations. FFh = DYB for the sector addressed by the DYBRD or DYBWR command is set to "1", not protecting that sector from program or erase operations. 9.6.13 SPI DDR Data Learning Registers Related Commands: Program NVDLR (PNVDLR 43h), Write VDLR (WVDLR 4Ah), Data Learning Pattern Read (DLPRD 41h), Read Any Register (RDAR 65h), Write Any Register (WRAR 71h). The Data Learning Pattern (DLP) resides in an 8-bit Non-Volatile Data Learning Register (NVDLR) as well as an 8-bit Volatile Data Learning Register (VDLR). When shipped from Cypress, the NVDLR value is 00h. Once programmed, the NVDLR cannot be reprogrammed or erased; a copy of the data pattern in the NVDLR will also be written to the VDLR. The VDLR can be written to at any time, but on power cycles the data pattern will revert back to what is in the NVDLR. During the learning phase described in the SPI DDR modes, the DLP will come from the VDLR. Each IO will output the same DLP value for every clock edge. For example, if the DLP is 34h (or binary 00110100) then during the first clock edge all IO's will output 0; subsequently, the 2nd clock edge all I/O's will output 0, the 3rd will output 1, etc. Document Number: 002-03631 Rev. *C Page 63 of 147 PRELIMINARY S25FS064S When the VDLR value is 00h, no preamble data pattern is presented during the dummy phase in the DDR commands. Table 9.29 Non-Volatile Data Learning Register (NVDLR) Bits Field Name Function Type Default State Description 7 to 0 NVDLP Non-Volatile Data Learning Pattern OTP 00h OTP value that may be transferred to the host during DDR read command latency (dummy) cycles to provide a training pattern to help the host more accurately center the data capture point in the received data bits. Table 9.30 Volatile Data Learning Register (VDLR) Bits 7 to 0 Field Name VDLP Function Volatile Data Learning Pattern Type Default State Volatile Takes the value of NVDLR during POR or Reset Description Volatile copy of the NVDLP used to enable and deliver the Data Learning Pattern (DLP) to the outputs. The VDLP may be changed by the host during system operation. 10. Data Protection 10.1 Secure Silicon Region (OTP) The device has a 1024 byte One Time Program (OTP) address space that is separate from the main Flash array. The OTP area is divided into 32, individually lockable, 32 byte aligned and length regions. The OTP memory space is intended for increased system security. OTP values can "mate" a flash component with the system CPU/ ASIC to prevent device substitution. See Section 9.5, OTP Address Space on page 47, Section 11.7.1, OTP Program (OTPP 42h) on page 113, and Section 11.7.2, OTP Read (OTPR 4Bh) on page 113. 10.1.1 Reading OTP Memory Space The OTP Read command uses the same protocol as Fast Read. OTP Read operations outside the valid 1KB OTP address range will yield indeterminate data. 10.1.2 Programming OTP Memory Space The protocol of the OTP programming command is the same as Page Program. The OTP Program command can be issued multiple times to any given OTP address, but this address space can never be erased. Automatic ECC is programmed on the first programming operation to each 16 byte region. Programming within a 16 byte region more than once disables the ECC. It is recommended to program each 16 byte portion of each 32 byte region once so that ECC remains enabled to provide the best data integrity. The valid address range for OTP Program is depicted in Figure 9.1, OTP Address Space on page 47. OTP Program operations outside the valid OTP address range will be ignored, without P_ERR in SR1V set to "1". OTP Program operations within the valid OTP address range, while FREEZE = 1, will fail with P_ERR in SR1V set to "1". The OTP address space is not protected by the selection of an ASP protection mode. The Freeze bit (CR1V[0]) may be used to protect the OTP Address Space. 10.1.3 Cypress Programmed Random Number Cypress standard practice is to program the low order 16 bytes of the OTP memory space (locations 0x0 to 0xF) with a 128-bit random number using the Linear Congruential Random Number Method. The seed value for the algorithm is a random number concatenated with the day and time of tester insertion. 10.1.4 Lock Bytes The LSB of each Lock byte protects the lowest address region related to the byte, the MSB protects the highest address region related to the byte. The next higher address byte similarly protects the next higher 8 regions. The LSB bit of the lowest address Lock Byte protects the higher address 16 bytes of the lowest address region. In other words, the LSB of location 0x10 protects all the Lock Bytes and RFU bytes in the lowest address region from further programming. See Section 9.5, OTP Address Space on page 47. Document Number: 002-03631 Rev. *C Page 64 of 147 PRELIMINARY 10.2 S25FS064S Write Enable Command The Write Enable (WREN) command must be written prior to any command that modifies non-volatile data. The WREN command sets the Write Enable Latch (WEL) bit. The WEL bit is cleared to 0 (disables writes) during power-up, hardware reset, or after the device completes the following commands: Reset Page Program (PP or 4PP) Parameter 4KB Erase (P4E or 4P4E) Sector Erase (SE or 4SE) Bulk Erase (BE) Write Disable (WRDI) Write Registers (WRR) Write Any Register (WRAR) OTP Byte Programming (OTPP) Advanced Sector Protection Register Program (ASPP) Persistent Protection Bit Program (PPBP) Persistent Protection Bit Erase (PPBE) Password Program (PASSP) Program Non-Volatile Data Learning Register (PNVDLR) 10.3 Block Protection The Block Protect bits (Status Register bits BP2, BP1, BP0) in combination with the Configuration Register TBPROT_O bit can be used to protect an address range of the main Flash array from program and erase operations. The size of the range is determined by the value of the BP bits and the upper or lower starting point of the range is selected by the TBPROT_O bit of the configuration register (CR1NV[5]). Table 10.1 S25FS064S Upper Array Start of Protection (TBPROT_O = 0) Status Register Content BP1 BP0 Protected Fraction of Memory Array Protected Memory (KBytes) BP2 0 0 0 None 0 0 0 1 Upper 64th 128 0 1 0 Upper 32nd 256 0 1 1 Upper 16th 512 1 0 0 Upper 8th 1024 1 0 1 Upper 4th 2048 1 1 0 Upper Half 4096 1 1 1 All Sectors 8192 Protected Fraction of Memory Array Protected Memory (KBytes) Table 10.2 S25FS064S Lower Array Start of Protection (TBPROT_O = 1) Status Register Content BP2 BP1 BP0 0 0 0 None 0 0 0 1 Lower 64th 128 0 1 0 Lower 32nd 256 0 1 1 Lower 16th 512 1 0 0 Lower 8th 1024 1 0 1 Lower 4th 2048 Document Number: 002-03631 Rev. *C Page 65 of 147 PRELIMINARY S25FS064S Table 10.2 S25FS064S Lower Array Start of Protection (TBPROT_O = 1) (Continued) Status Register Content BP1 BP0 Protected Fraction of Memory Array Protected Memory (KBytes) BP2 1 1 0 Lower Half 4096 1 1 1 All Sectors 8192 When Block Protection is enabled (i.e., any BP2-0 are set to "1"), Advanced Sector Protection (ASP) can still be used to protect sectors not protected by the Block Protection scheme. In the case that both ASP and Block Protection are used on the same sector the logical OR of ASP and Block Protection related to the sector is used. 10.3.1 Freeze bit Bit 0 of Configuration Register 1 (CR1V[0]) is the FREEZE bit. The Freeze Bit, when set to 1, locks the current state of the Block Protection control bits and OTP area until the next power off-on cycle. Additional details in Section 9.6.3.2, Configuration Register 1 Volatile (CR1V) on page 53 10.3.2 Write Protect Signal The Write Protect (WP#) input in combination with the Status Register Write Disable (SRWD) bit (SR1NV[7]) provide hardware input signal controlled protection. When WP# is Low and SRWD is set to "1" Status Register-1 (SR1NV and SR1V) and Configuration register-1 (CR1NV and CR1V) are protected from alteration. This prevents disabling or changing the protection defined by the Block Protect bits. See Section 9.6.1, Status Registers 1 on page 49. Document Number: 002-03631 Rev. *C Page 66 of 147 PRELIMINARY 10.4 S25FS064S Advanced Sector Protection Advanced Sector Protection (ASP) is the name used for a set of independent hardware and software methods used to disable or enable programming or erase operations, individually, in any or all sectors. Every main Flash array sector has a non-volatile Persistent Protection Bit (PPB) and a volatile Dynamic Protection Bit (DYB) associated with it. When either bit is "0", the sector is protected from program and erase operations. The PPB bits are protected from program and erase when the volatile PPB Lock bit is "0". There are two methods for managing the state of the PPB Lock bit: Password Protection and Persistent Protection. An overview of these methods is shown in Figure 10.2, Advanced Sector Protection Overview on page 68. Block Protection and ASP protection settings for each sector are logically ORed to define the protection for each sector i.e. if either mechanism is protecting a sector the sector cannot be programmed or erased. Refer to Section 10.3, Block Protection on page 65 for full details of the BP2-0 bits Figure 10.1 Sector Protection Control Dynamic Protection Bits Array (DYB) Sector 1 Logical OR Sector 1 Sector 1 ... ... Block Protection Logic Sector N Document Number: 002-03631 Rev. *C ... Logical OR Sector 0 ... Sector 0 Sector 0 Sector N Flash Memory Array Logical OR Persistent Protection Bits Array (PPB) Sector N Page 67 of 147 PRELIMINARY S25FS064S Figure 10.2 Advanced Sector Protection Overview Power On / Reset ASPR[2]=0 ASPR[1]=0 No No Yes Yes Password Protection Persistent Protection ASPR Bits Locked ASPR Bits Locked PPBLOCK = 0 PPB Bits Locked PPBLOCK = 1 PPB Bits Erasable and Programmable No Password Unlock Yes PPBLOCK = 1 PPB Bits Erasable and Programmable Default Persistent Protection ASPR Bits Are Programmable No PPB Lock Bit Write Yes PPBLOCK = 0 PPB Bits Locked Default Mode allows ASPR to be programmed to permanently select the Protection mode. No PPB Lock Bit Write Yes Password Protection Mode protects the PPB after power up. A password unlock command will enable changes to PPB. A PPB Lock Bit write command turns protection back on. Document Number: 002-03631 Rev. *C Persistent Protection Mode does not protect the PPB after power up. The PPB bits may be changed. A PPB Lock Bit write command protects the PPB bits until the next power off or reset. The default mode otherwise acts the same as the Persistent Protection Mode. After one of the protection modes is selected, ASPR is no longer programmable, making the selected protection mode permanent. Page 68 of 147 PRELIMINARY S25FS064S The Persistent Protection method sets the PPB Lock bit to "1" during POR, or Hardware Reset so that the PPB bits are unprotected by a device reset. There is a command to clear the PPB Lock bit to "0" to protect the PPB. There is no command in the Persistent Protection method to set the PPB Lock bit to "1", therefore the PPB Lock bit will remain at "0" until the next power-off or hardware reset. The Persistent Protection method allows boot code the option of changing sector protection by programming or erasing the PPB, then protecting the PPB from further change for the remainder of normal system operation by clearing the PPB Lock bit to "0". This is sometimes called Boot-code controlled sector protection. The Password method clears the PPB Lock bit to "0" during POR, or Hardware Reset to protect the PPB. A 64 bit password may be permanently programmed and hidden for the password method. A command can be used to provide a password for comparison with the hidden password. If the password matches, the PPB Lock bit is set to "1" to unprotect the PPB. A command can be used to clear the PPB Lock bit to "0". This method requires use of a password to control PPB protection. The selection of the PPB Lock bit management method is made by programming OTP bits in the ASP Register so as to permanently select the method used. 10.4.1 ASP Register The ASP register is used to permanently configure the behavior of Advanced Sector Protection (ASP) features. See Table 9.24, ASP Register (ASPR) on page 62. As shipped from the factory, all devices default ASP to the Persistent Protection mode, with all sectors unprotected, when power is applied. The device programmer or host system must then choose which sector protection method to use. Programming either of the, one-time programmable, Protection Mode Lock Bits, locks the part permanently in the selected mode: ASPR[2:1] = "11" = No ASP mode selected, Persistent Protection Mode is the default. ASPR[2:1] = "10" = Persistent Protection Mode permanently selected. ASPR[2:1] = "01" = Password Protection Mode permanently selected. ASPR[2:1] = "00" is an Illegal condition, attempting to program more than one bit to zero results in a programming failure. ASP register programming rules: If the password mode is chosen, the password must be programmed prior to setting the Protection Mode Lock Bits. Once the Protection Mode is selected, the following OTP configuration Register bits are permanently protected from programming and no further changes to the OTP register bits is allowed: - CR1NV - CR2NV - CR3NV - CR4NV - ASPR - PASS - NVDLR - If an attempt to change any of the registers above, after the ASP mode is selected, the operation will fail and P_ERR (SR1V[6]) will be set to 1. The programming time of the ASP Register is the same as the typical page programming time. The system can determine the status of the ASP register programming operation by reading the WIP bit in the Status Register. See Section 9.6.1, Status Registers 1 on page 49 for information on WIP. See Section 10.4.5, Sector Protection States Summary on page 70. 10.4.2 Persistent Protection Bits The Persistent Protection Bits (PPB) are located in a separate nonvolatile Flash array. One of the PPB bits is related to each sector. When a PPB is "0", its related sector is protected from program and erase operations. The PPB are programmed individually but must be erased as a group, similar to the way individual words may be programmed in the main array but an entire sector must be erased at the same time. The PPB have the same program and erase endurance as the main Flash memory array. Preprogramming and verification prior to erasure are handled by the device. Document Number: 002-03631 Rev. *C Page 69 of 147 PRELIMINARY S25FS064S Programming a PPB bit requires the typical page programming time. Erasing all the PPBs requires typical sector erase time. During PPB bit programming and PPB bit erasing, status is available by reading the Status register. Reading of a PPB bit requires the initial access time of the device. Notes: 1. Each PPB is individually programmed to "0" and all are erased to "1" in parallel. 2. If the PPB Lock bit is "0", the PPB Program or PPB Erase command does not execute and fails without programming or erasing the PPB. 3. The state of the PPB for a given sector can be verified by using the PPB Read command. 10.4.3 Dynamic Protection Bits Dynamic Protection Bits are volatile and unique for each sector and can be individually modified. DYB only control the protection for sectors that have their PPB set to "1". By issuing the DYB Write command, a DYB is cleared to "0" or set to "1", thus placing each sector in the protected or unprotected state respectively. This feature allows software to easily protect sectors against inadvertent changes, yet does not prevent the easy removal of protection when changes are needed. The DYBs can be set or cleared as often as needed as they are volatile bits. 10.4.4 PPB Lock Bit (PPBL[0]) The PPB Lock Bit is a volatile bit for protecting all PPB bits. When cleared to "0", it locks all PPBs, when set to "1", it allows the PPBs to be changed. See Section 9.6.10, PPB Lock Register (PPBL) on page 62 for more information. The PLBWR command is used to clear the PPB Lock bit to "0". The PPB Lock Bit must be cleared to "0" only after all the PPBs are configured to the desired settings. In Persistent Protection mode, the PPB Lock is set to "1" during POR or a hardware reset. When cleared to "0", no software command sequence can set the PPB Lock bit to "1", only another hardware reset or power-up can set the PPB Lock bit. In the Password Protection mode, the PPB Lock bit is cleared to "0" during POR or a hardware reset. The PPB Lock bit can only be set to "1" by the Password Unlock command. 10.4.5 Sector Protection States Summary Each sector can be in one of the following protection states: Unlocked -- The sector is unprotected and protection can be changed by a simple command. The protection state defaults to unprotected when the device is shipped from Cypress. Dynamically Locked -- A sector is protected and protection can be changed by a simple command. The protection state is not saved across a power cycle or reset. Persistently Locked -- A sector is protected and protection can only be changed if the PPB Lock Bit is set to "1". The protection state is non-volatile and saved across a power cycle or reset. Changing the protection state requires programming and or erase of the PPB bits Document Number: 002-03631 Rev. *C Page 70 of 147 PRELIMINARY S25FS064S Table 10.3 Sector Protection States Protection Bit Values Sector State PPB Lock PPB DYB 1 1 1 Unprotected - PPB and DYB are changeable 1 1 0 Protected - PPB and DYB are changeable 1 0 1 Protected - PPB and DYB are changeable 1 0 0 Protected - PPB and DYB are changeable 0 1 1 Unprotected - PPB not changeable, DYB is changeable 0 1 0 Protected - PPB not changeable, DYB is changeable 0 0 1 Protected - PPB not changeable, DYB is changeable 0 0 0 Protected - PPB not changeable, DYB is changeable 10.4.6 Persistent Protection Mode The Persistent Protection method sets the PPB Lock bit to "1" during POR or Hardware Reset so that the PPB bits are unprotected by a device hardware reset. Software reset does not affect the PPB Lock bit. The PLBWR command can clear the PPB Lock bit to "0" to protect the PPB. There is no command to set the PPB Lock bit therefore the PPB Lock bit will remain at "0" until the next power-off or hardware reset. 10.4.7 Password Protection Mode Password Protection Mode allows an even higher level of security than the Persistent Sector Protection Mode, by requiring a 64-bit password for unlocking the PPB Lock bit. In addition to this password requirement, after power up and hardware reset, the PPB Lock bit is cleared to "0" to ensure protection at power-up. Successful execution of the Password Unlock command by entering the entire password sets the PPB Lock bit to 1, allowing for sector PPB modifications. Password Protection Notes: Once the Password is programmed and verified, the Password Mode (ASPR[2]=0) must be set in order to prevent reading the password. The Password Program Command is only capable of programming "0"s. Programming a "1" after a cell is programmed as a "0" results in the cell left as a "0" with no programming error set. The password is all "1"s when shipped from Cypress. It is located in its own memory space and is accessible through the use of the Password Program, Password Read, RDAR, and WRAR commands. These commands will not provide access after the Password lock mode is selected. All 64-bit password combinations are valid as a password. The Password Mode, once programmed, prevents reading the 64-bit password and further password programming. All further program and read commands to the password region are disabled and these commands are ignored or return undefined data. There is no means to verify what the password is after the Password Mode Lock Bit is selected. Password verification is only allowed before selecting the Password Protection mode. The Protection Mode Lock Bits are not erasable. The exact password must be entered in order for the unlocking function to occur. If the password unlock command provided password does not match the hidden internal password, the unlock operation fails in the same manner as a programming operation on a protected sector. The P_ERR bit is set to one, the WIP Bit remains set, and the PPB Lock bit remains cleared to 0. The Password Unlock command cannot be accepted any faster than once every 100 s 20 s. This makes it take an unreasonably long time (58 million years) for a hacker to run through all the 64-bit combinations in an attempt to correctly match a password. The Read Status Register 1 command may be used to read the WIP bit to determine when the device has completed the password unlock command or is ready to accept a new password command. When a valid password is provided the password unlock command does not insert the 100 s delay before returning the WIP bit to zero. If the password is lost after selecting the Password Mode, there is no way to set the PPB Lock bit. ECC status may only be read from sectors that are readable. In read protection mode the addresses are forced to the boot sector address. ECC status is shown in that sector while read protection mode is active. Document Number: 002-03631 Rev. *C Page 71 of 147 PRELIMINARY 10.5 S25FS064S Recommended Protection Process During system manufacture, the Flash device configuration should be defined by: 1. Programming the OTP configuration bits in CR1NV[5, 3:2], CR2NV, CR3NV, and CR4NV as desired. 2. Program the Secure Silicon Region (OTP area) as desired. 3. Program the PPB bits as desired via the PPBP command. 4. Program the Non-Volatile Data Learning Pattern (NVDLR) if it will be used in DDR read commands. 5. Program the Password register (PASS) if password protection will be used. 6. Program the ASP Register as desired, including the selection of the persistent or password ASP protection mode in ASPR[2:1]. It is very important to explicitly select a protection mode so that later accidental or malicious programming of the ASP register and OTP configuration is prevented. This is to ensure that only the intended OTP protection and configuration features are enabled. During system power up and boot code execution: 1. Trusted boot code can determine whether there is any need to program additional SSR (OTP area) information. If no SSR changes are needed the FREEZE bit (CR1V[0]) can be set to 1 to protect the SSR from changes during the remainder of normal system operation while power remains on. 2. If the persistent protection mode is in use, trusted boot code can determine whether there is any need to modify the persistent (PPB) sector protection via the PPBP or PPBE commands. If no PPB changes are needed the PPBLOCK bit can be cleared to 0 via the PPBL to protect the PPB bits from changes during the remainder of normal system operation while power remains on. 3. The dynamic (DYB) sector protection bits can be written as desired via the DYBAR. Document Number: 002-03631 Rev. *C Page 72 of 147 PRELIMINARY S25FS064S 11. Commands All communication between the host system and FS-S Family memory devices is in the form of units called commands. All commands begin with an instruction that selects the type of information transfer or device operation to be performed. Commands may also have an address, instruction modifier, latency period, data transfer to the memory, or data transfer from the memory. All instruction, address, and data information is transferred sequentially between the host system and memory device. Command protocols are also classified by a numerical nomenclature using three numbers to reference the transfer width of three command phases: instruction; address and instruction modifier (mode); data. Single bit wide commands start with an instruction and may provide an address or data, all sent only on the SI/IO0 signal. Data may be sent back to the host serially on the SO/IO1 signal. This is referenced as a 1-1-1 command protocol for single bit width instruction, single bit width address and modifier, single bit data. Dual Output or Quad Output commands provide an address sent from the host on IO0. Data is returned to the host as bit pairs on IO0 and IO1 or, four bit (nibble) groups on IO0, IO1, IO2, and IO3. This is referenced as 1-1-2 for Dual Output and 1-1-4 for Quad Output command protocols. Dual or Quad Input / Output (I/O) commands provide an address sent from the host as bit pairs on IO0 and IO1 or, four bit (nibble) groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as bit pairs on IO0 and IO1 or, four bit (nibble) groups on IO0, IO1, IO2, and IO3. This is referenced as 1-2-2 for Dual I/O and 1-4-4 for Quad I/O command protocols. The FS-S Family also supports a QPI mode in which all information is transferred in 4-bit width, including the instruction, address, modifier, and data. This is referenced as a 4-4-4 command protocol. Commands are structured as follows: Each command begins with an eight bit (byte) instruction. However, some read commands are modified by a prior read command, such that the instruction is implied from the earlier command. This is called Continuous Read Mode. When the device is in continuous read mode, the instruction bits are not transmitted at the beginning of the command because the instruction is the same as the read command that initiated the Continuous Read Mode. In Continuous Read mode the command will begin with the read address. Thus, Continuous Read Mode removes eight instruction bits from each read command in a series of same type read commands. The instruction may be stand alone or may be followed by address bits to select a location within one of several address spaces in the device. The address may be either a 24 bit or 32 bit, byte boundary, address. The Serial Peripheral Interface with Multiple IO provides the option for each transfer of address and data information to be done one, two, or four bits in parallel. This enables a trade off between the number of signal connections (IO bus width) and the speed of information transfer. If the host system can support a two or four bit wide IO bus the memory performance can be increased by using the instructions that provide parallel two bit (dual) or parallel four bit (quad) transfers. In legacy SPI Multiple IO mode, the width of all transfers following the instruction are determined by the instruction sent. Following transfers may continue to be single bit serial on only the SI or Serial Output (SO) signals, they may be done in two bit groups per (dual) transfer on the IO0 and IO1 signals, or they may be done in 4 bit groups per (quad) transfer on the IO0-IO3 signals. Within the dual or quad groups the least significant bit is on IO0. More significant bits are placed in significance order on each higher numbered IO signal. Single bits or parallel bit groups are transferred in most to least significant bit order. In QPI mode, the width of all transfers, including instructions, is a 4-bit wide (quad) transfer on the IO0-IO3 signals. Dual I/O and Quad I/O read instructions send an instruction modifier called mode bits, following the address, to indicate that the next command will be of the same type with an implied, rather than an explicit, instruction. The next command thus does not provide an instruction byte, only a new address and mode bits. This reduces the time needed to send each command when the same command type is repeated in a sequence of commands. The address or mode bits may be followed by write data to be stored in the memory device or by a read latency period before read data is returned to the host. Read latency may be zero to several SCK cycles (also referred to as dummy cycles). Document Number: 002-03631 Rev. *C Page 73 of 147 PRELIMINARY S25FS064S All instruction, address, mode, and data information is transferred in byte granularity. Addresses are shifted into the device with the most significant byte first. All data is transferred with the lowest address byte sent first. Following bytes of data are sent in lowest to highest byte address order i.e. the byte address increments. All attempts to read the flash memory array during a program, erase, or a write cycle (embedded operations) are ignored. The embedded operation will continue to execute without any affect. A very limited set of commands are accepted during an embedded operation. These are discussed in the individual command descriptions. While a program, erase, or write operation is in progress, it is recommended to check that the Write-In Progress (WIP) bit is 0 before issuing most commands to the device, to ensure the new command can be accepted. Depending on the command, the time for execution varies. A command to read status information from an executing command is available to determine when the command completes execution and whether the command was successful. Although host software in some cases is used to directly control the SPI interface signals, the hardware interfaces of the host system and the memory device generally handle the details of signal relationships and timing. For this reason, signal relationships and timing are not covered in detail within this software interface focused section of the document. Instead, the focus is on the logical sequence of bits transferred in each command rather than the signal timing and relationships. Following are some general signal relationship descriptions to keep in mind. For additional information on the bit level format and signal timing relationships of commands, see Section 4.2, Command Protocol on page 13. - The host always controls the Chip Select (CS#), Serial Clock (SCK), and Serial Input (SI/IO0) for single bit wide transfers. The memory drives Serial Output (SO/IO1) for single bit read transfers. The host and memory alternately drive the IO0-IO3 signals during Dual and Quad transfers. - All commands begin with the host selecting the memory by driving CS# low before the first rising edge of SCK. CS# is kept low throughout a command and when CS# is returned high the command ends. Generally, CS# remains low for eight bit transfer multiples to transfer byte granularity information. Some commands will not be accepted if CS# is returned high not at an 8 bit boundary. 11.1 Command Set Summary 11.1.1 Extended Addressing 1. Instructions that always require a 4-Byte address, used to access up to 32 Gb of memory: Command Name Function 4READ Read Instruction (Hex) 13 4FAST_READ Read Fast 0C 4DOR Dual Output Read 3C 4QOR Quad Output Read 6C 4DIOR Dual I/O Read BC 4QIOR Quad I/O Read EC 4DDRQIOR DDR Quad I/O Read EE 4PP Page Program 12 4QPP Quad Page Program 34 4P4E Parameter 4 KB Erase 21 DC 4SE Erase 64 KB 4ECCRD ECC Status Read 18 4DYBRD DYB Read E0 4DYBWR DYBWR E1 4PPBRD PPB Read E2 4PPBP PPB Program E3 Document Number: 002-03631 Rev. *C Page 74 of 147 PRELIMINARY S25FS064S 2. A 4 Byte address mode for backward compatibility to the 3 Byte address instructions. The standard 3 Byte instructions can be used in conjunction with a 4 Byte address mode controlled by the Address Length configuration bit (CR2V[7]). The default value of CR2V[7] is loaded from CR2NV[7] (following power up, hardware reset, or software reset), to enable default 3-Byte (24-bit) or 4 Byte (32 bit) addressing. When the address length (CR2V[7]) set to 1, the legacy commands are changed to require 4-Bytes (32-bits) for the address field. The following instructions can be used in conjunction with the 4 Byte address mode configuration to switch from 3-Bytes to 4-Bytes of address field. Command Name Function Instruction (Hex) READ Read 03 FAST_READ Read Fast 0B DOR Dual Output Read 3B QOR Quad Output Read 6B BB DIOR Dual I/O Read QIOR Quad I/O Read EB DDRQIOR DDR Quad I/O Read) ED PP Page Program 02 QPP Quad Page Program 32 P4E Parameter 4 KB Erase 20 SE Erase 64 / 256 KB D8 RDAR Read Any Register 65 WRAR Write Any Register 71 EES Evaluate Erase Status D0 OTPP OTP Program 42 OTPR OTP Read 4B ECCRD ECC Status Read 19 DYBRD DYB Read FA DYBWR DYBWR FB PPBRD PPB Read FC PPBP PPB Program FD Document Number: 002-03631 Rev. *C Page 75 of 147 PRELIMINARY S25FS064S 11.1.2 Command Summary by Function Table 11.1 FS-S Family Command Set (sorted by function) Function Command Name RDID Read Device ID RSFDP RDQID RUID Register Access Address Length (Bytes) QPI Read ID (JEDEC Manufacturer ID and JEDEC CFI) 9F 133 0 Yes Read JEDEC Serial Flash Discoverable Parameters 5A 50 3 Yes Read Quad ID AF 133 0 Yes Read Unique ID 4C 133 0 Yes Read Status Register-1 05 133 0 Yes RDSR2 Read Status Register-2 07 133 0 No RDCR Read Configuration Register-1 35 133 0 No RDAR Read Any Register 65 133 3 or 4 Yes WRR Write Register (Status-1, Configuration-1) 01 133 0 Yes WRDI Write Disable 04 133 0 Yes WREN Write Enable 06 133 0 Yes WRAR Write Any Register 71 133 3 or 4 Yes CLSR Clear Status Register-1 - Erase/Program Fail Reset This command may be disabled and the instruction value instead used for a program / erase resume command - see Section 9.6.5, Configuration Register 3 on page 57 30 133 0 Yes CLSR Clear Status Register-1(Alternate instruction) - Erase/Program Fail Reset 82 133 0 Yes 4BEN No Enter 4 Byte Address Mode B7 133 0 SBL Set Burst Length C0 133 0 No EES Evaluate Erase Status D0 133 3 or 4 Yes ECCRD ECC Read 19 133 3 or 4 Yes 4ECCRD ECC Read 18 133 4 Yes Data Learning Pattern Read 41 133 0 No PNVDLR Program NV Data Learning Register 43 133 0 No WVDLR No Write Volatile Data Learning Register 4A 133 0 READ Read 03 50 3 or 4 No 4READ Read 13 50 4 No Fast Read 0B 133 3 or 4 No FAST_READ 4FAST_READ Fast Read 0C 133 4 No DOR Dual Output Read 3B 133 3 or 4 No 4DOR Dual Output Read 3C 133 4 No QOR Quad Output Read 6B 133 3 or 4 No 4QOR Quad Output Read 6C 133 4 No DIOR Dual I/O Read BB 66 3 or 4 No 4DIOR Dual I/O Read BC 66 4 No QIOR Quad I/O Read EB 133 3 or 4 Yes 4QIOR Yes Quad I/O Read EC 133 4 DDRQIOR DDR Quad I/O Read ED 80 3 or 4 Yes 4DDRQIOR DDR Quad I/O Read EE 80 4 Yes Page Program 02 133 3 or 4 Yes PP Program Flash Array Maximum Frequency (MHz) RDSR1 DLPRD Read Flash Array instruction Value (Hex) Command Description 4PP Page Program 12 133 4 Yes QPP Quad Page Program 32 133 3 or 4 No 4QPP Quad Page Program 34 133 4 No Document Number: 002-03631 Rev. *C Page 76 of 147 PRELIMINARY S25FS064S Table 11.1 FS-S Family Command Set (sorted by function) (Continued) Function Erase Flash Array Command Name P4E Parameter 4KB-sector Erase 4P4E Suspend / Resume One Time Program Array Advanced Sector Protection DPD Maximum Frequency (MHz) Address Length (Bytes) QPI 20 133 3 or 4 Yes Yes Parameter 4KB-sector Erase 21 133 4 Erase 64KB D8 133 3 or 4 Yes 4SE Erase 64KB DC 133 4 Yes BE Bulk Erase 60 133 0 Yes Bulk Erase (alternate instruction) C7 133 0 Yes EPS Erase / Program Suspend 75 133 0 Yes EPS Erase / Program Suspend (alternate instruction) 85 133 0 Yes EPS Erase / Program Suspend (alternate instruction B0 133 0 Yes EPR Erase / Program Resume 7A 133 0 Yes EPR Erase / Program Resume (alternate instruction) 8A 133 0 Yes EPR Erase / Program Resume (alternate instruction This command may be disabled and the instruction value instead used for a clear status command - see Section 9.6.5, Configuration Register 3 on page 57 30 133 0 Yes OTPP OTP Program 42 133 3 or 4 No OTPR OTP Read 4B 133 3 or 4 No DYBRD DYB Read FA 133 3 or 4 Yes 4DYBRD DYB Read E0 133 4 Yes DYBWR DYB Write FB 133 3 or 4 Yes 4DYBWR DYB Write E1 133 4 Yes PPBRD PPB Read FC 133 3 or 4 No 4PPBRD PPB Read E2 133 4 No PPBP PPB Program FD 133 3 or 4 No 4PPBP PPB Program E3 133 4 No PPBE PPB Erase E4 133 0 No ASPRD ASP Read 2B 133 0 No ASPP Reset instruction Value (Hex) SE BE Erase / Program Command Description ASP Program 2F 133 0 No PLBRD PPB Lock Bit Read A7 133 0 No PLBWR PPB Lock Bit Write A6 133 0 No PASSRD Password Read E7 133 0 No No PASSP Password Program E8 133 0 PASSU Password Unlock E9 133 0 No RSTEN Software Reset Enable 66 133 0 Yes Software Reset 99 133 0 Yes RST RESET Legacy Software Reset F0 133 0 No MBR Mode Bit Reset FF 133 0 Yes DPD Enter Deep Power Down Mode B9 133 0 Yes RES Release from Deep Power Down Mode AB 133 0 Yes Note: 1. Commands not supported in QPI mode have undefined behavior if sent when the device is in QPI mode. Document Number: 002-03631 Rev. *C Page 77 of 147 PRELIMINARY S25FS064S 11.1.3 Read Device Identification There are multiple commands to read information about the device manufacturer, device type, and device features. SPI memories from different vendors have used different commands and formats for reading information about the memories. The FS-S Family supports the three device information commands. 11.1.4 Register Read or Write There are multiple registers for reporting embedded operation status or controlling device configuration options. There are commands for reading or writing these registers. Registers contain both volatile and non-volatile bits. Non-volatile bits in registers are automatically erased and programmed as a single (write) operation. 11.1.4.1 Monitoring Operation Status The host system can determine when a write, program, erase, suspend or other embedded operation is complete by monitoring the Write in Progress (WIP) bit in the Status Register. The Read from Status Register-1 command or Read Any Register command provides the state of the WIP bit. The program error (P_ERR) and erase error (E_ERR) bits in the status register indicate whether the most recent program or erase command has not completed successfully. When P_ERR or E_ERR bits are set to one, the WIP bit will remain set to one indicating the device remains busy and unable to receive most new operation commands. Only status read (RDSR1 05h), Read Any Register (RDAR 65h), status clear (CLSR 30h or 82h), and software reset (RSTEN 66h, RST 99h or RESET F0h) are valid commands when P_ERR or E_ERR is set to 1. A Clear Status Register (CLSR) followed by a Write Disable (WRDI) command must be sent to return the device to standby state. Clear Status Register clears the WIP, P_ERR, and E_ERR bits. WRDI clears the WEL bit. Alternatively, Hardware Reset, or Software Reset (RST or RESET) may be used to return the device to standby state. 11.1.4.2 Configuration There are commands to read, write, and protect registers that control interface path width, interface timing, interface address length, and some aspects of data protection. 11.1.5 Read Flash Array Data may be read from the memory starting at any byte boundary. Data bytes are sequentially read from incrementally higher byte addresses until the host ends the data transfer by driving CS# input High. If the byte address reaches the maximum address of the memory array, the read will continue at address zero of the array. Burst Wrap read can be enabled by the Set Burst Length (SBL 77h) command with the requested wrapped read length and alignment, see Section 11.3.15, Set Burst Length (SBL C0h) on page 92. Burst Wrap read is only for Quad I/O, Quad Output and QPI modes There are several different read commands to specify different access latency and data path widths. Double Data Rate (DDR) commands also define the address and data bit relationship to both SCK edges: The Read command provides a single address bit per SCK rising edge on the SI/IO0 signal with read data returning a single bit per SCK falling edge on the SO/IO1signal. This command has zero latency between the address and the returning data but is limited to a maximum SCK rate of 50MHz. Other read commands have a latency period between the address and returning data but can operate at higher SCK frequencies. The latency depends on a configuration register read latency value. The Fast Read command provides a single address bit per SCK rising edge on the SI/IO0 signal with read data returning a single bit per SCK falling edge on the SO/IO1 signal. Dual or Quad Output Read commands provide address on SI/IO0 pin on the SCK rising edge with read data returning two bits, or four bits of data per SCK falling edge on the IO0 - IO3 signals. Dual or Quad I/O Read commands provide address two bits or four bits per SCK rising edge with read data returning two bits, or four bits of data per SCK falling edge on the IO0 - IO3 signals. Quad Double Data Rate read commands provide address four bits per every SCK edge with read data returning four bits of data per every SCK edge on the IO0 - IO3 signals. Document Number: 002-03631 Rev. *C Page 78 of 147 PRELIMINARY S25FS064S 11.1.6 Program Flash Array Programming data requires two commands: Write Enable (WREN), Page Program (PP) and Quad Page Program (QPP). The Page Program and Quad Page Program commands accepts from 1 byte up to 256 or 512 consecutive bytes of data (page) to be programmed in one operation. Programming means that bits can either be left at 1, or programmed from 1 to 0. Changing bits from 0 to 1 requires an erase operation. 11.1.7 Erase Flash Array The Parameter Sector Erase, Sector Erase, or Bulk Erase commands set all the bits in a sector or the entire memory array to 1. A bit needs to be first erased to 1 before programming can change it to a 0. While bits can be individually programmed from a 1 to 0, erasing bits from 0 to 1 must be done on a sector-wide or array-wide (bulk) level. The Write Enable (WREN) command must precede an erase command. 11.1.8 OTP, Block Protection, and Advanced Sector Protection There are commands to read and program a separate One Time Programmable (OTP) array for permanent data such as a serial number. There are commands to control a contiguous group (block) of Flash memory array sectors that are protected from program and erase operations.There are commands to control which individual Flash memory array sectors are protected from program and erase operations. 11.1.9 Reset There are commands to reset to the default conditions present after power on to the device. However, the software reset commands do not affect the current state of the FREEZE or PPB Lock bits. In all other respects a software reset is the same as a hardware reset. There is a command to reset (exit from) the Continuous Read Mode. 11.1.10 DPD A Deep Power Down (DPD) mode is supported by the FS-S Family devices. If the device has been placed in DPD mode by the DPD (B9h) command, the interface standby current is (IDPD). The DPD command is accepted only while the device is not performing an embedded algorithm as indicated by the Status Register-1 volatile Write In Progress (WIP) bit being cleared to zero (SR1V[0] = 0). While in DPD mode the device ignores all commands except the Release from DPD (RES ABh) command, that will return the device to the Interface Standby state after a delay of tRES. 11.1.11 Reserved Some instructions are reserved for future use. In this generation of the FS-S Family some of these command instructions may be unused and not affect device operation, some may have undefined results. Some commands are reserved to ensure that a legacy or alternate source device command is allowed without effect. This allows legacy software to issue some commands that are not relevant for the current generation FS-S Family with the assurance these commands do not cause some unexpected action. Some commands are reserved for use in special versions of the FS-S not addressed by this document or for a future generation. This allows new host memory controller designs to plan the flexibility to issue these command instructions. The command format is defined if known at the time this document revision is published. Document Number: 002-03631 Rev. *C Page 79 of 147 PRELIMINARY 11.2 S25FS064S Identification Commands 11.2.1 Read Identification (RDID 9Fh) The Read Identification (RDID) command provides read access to manufacturer identification, device identification, and Common Flash Interface (CFI) information. The manufacturer identification is assigned by JEDEC. The CFI structure is defined by JEDEC standard. The device identification and CFI values are assigned by Cypress. The JEDEC Common Flash Interface (CFI) specification defines a device information structure, which allows a vendor-specified software Flash management program (driver) to be used for entire families of Flash devices. Software support can then be deviceindependent, JEDEC manufacturer ID independent, forward and backward-compatible for the specified Flash device families. System vendors can standardize their Flash drivers for long-term software compatibility by using the CFI values to configure a family driver from the CFI information of the device in use. Any RDID command issued while a program, erase, or write cycle is in progress is ignored and has no effect on execution of the program, erase, or write cycle that is in progress. The RDID instruction is shifted on SI. After the last bit of the RDID instruction is shifted into the device, a byte of manufacturer identification, two bytes of device identification, extended device identification, and CFI information will be shifted sequentially out on SO. As a whole this information is referred to as ID-CFI. See Section 13.2, Device ID and Common Flash Interface (ID-CFI) Address Map -- Standard on page 124 for the detail description of the ID-CFI contents. Continued shifting of output beyond the end of the defined ID-CFI address space will provide undefined data. The RDID command sequence is terminated by driving CS# to the logic high state anytime during data output. The maximum clock frequency for the RDID command is 133 MHz. Figure 11.1 Read Identification (RDID) Command Sequence CS# SCK SI_ IO0 7 6 5 4 3 2 1 0 SO _ IO1 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 IO2-IO3 Phase Instruction Data 1 Data N This command is also supported in QPI mode. In QPI mode the instruction is shifted in on IO0-IO3 and the returning data is shifted out on IO0-IO3. Figure 11.2 Read Identification (RDID) QPI Mode Command CS# SCLK IO0 4 0 4 0 4 0 4 0 4 0 4 0 IO1 5 1 5 1 5 1 5 1 5 1 5 1 IO2 6 2 6 2 6 2 6 2 6 2 6 2 IO3 7 3 7 3 7 3 7 3 7 3 7 3 Phase Instruction Document Number: 002-03631 Rev. *C D1 D2 D3 D4 Data N Page 80 of 147 PRELIMINARY S25FS064S 11.2.2 Read Quad Identification (RDQID AFh) The Read Quad Identification (RDQID) command provides read access to manufacturer identification, device identification, and Common Flash Interface (CFI) information. This command is an alternate way of reading the same information provided by the RDID command while in QPI mode. In all other respects the command behaves the same as the RDID command. The command is recognized only when the device is in QPI Mode (CR2V[6]=1). The instruction is shifted in on IO0-IO3. After the last bit of the instruction is shifted into the device, a byte of manufacturer identification, two bytes of device identification, extended device identification, and CFI information will be shifted sequentially out on IO0-IO3. As a whole this information is referred to as IDCFI. See Section 13.2, Device ID and Common Flash Interface (ID-CFI) Address Map -- Standard on page 124 for the detail description of the ID-CFI contents. Continued shifting of output beyond the end of the defined ID-CFI address space will provide undefined data. The command sequence is terminated by driving CS# to the logic high state anytime during data output. The maximum clock frequency for the command is 133 MHz. Command sequence is terminated by driving CS# to the logic high state anytime during data output. Figure 11.3 Read Quad Identification (RDQID) Command Sequence Quad Mode CS# SCLK IO0 4 0 4 0 IO1 7 6 5 4 5 1 5 1 IO2 6 2 6 2 IO3 7 3 7 Phase 3 2 1 0 Instruction D1 3 Data N Figure 11.4 Read Quad Identification (RDQID) Command Sequence QPI Mode CS# SCLK IO0 4 0 4 0 4 0 4 0 4 0 4 0 IO1 5 1 5 1 5 1 5 1 5 1 5 1 IO2 6 2 6 2 6 2 6 2 6 2 6 2 IO3 7 3 7 3 7 3 7 3 7 3 7 3 Phase Instruction D1 D2 D3 D4 Data N 11.2.3 Read Serial Flash Discoverable Parameters (RSFDP 5Ah) The command is initiated by shifting on SI the instruction code "5Ah", followed by a 24-bit address of 000000h, followed by 8 dummy cycles. The SFDP bytes are then shifted out on SO starting at the falling edge of SCK after the dummy cycles. The SFDP bytes are always shifted out with the MSB first. If the 24-bit address is set to any other value, the selected location in the SFDP space is the starting point of the data read. This enables random access to any parameter in the SFDP space. The RSFDP command is supported up to 50 MHz. Figure 11.5 RSFDP Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 23 1 0 SO_IO1 Phase 7 Instruction Document Number: 002-03631 Rev. *C Address Dummy Cycles 6 5 4 3 2 1 0 Data 1 Page 81 of 147 PRELIMINARY S25FS064S This command is also supported in QPI mode. In QPI mode the instruction is shifted in on IO0-IO3 and the returning data is shifted out on IO0-IO3. Figure 11.6 RSFDP QPI Mode Command Sequence CS# SCLK IO0 4 0 A-3 4 0 4 0 4 0 4 0 4 0 IO1 5 1 A-2 5 1 5 1 5 1 5 1 5 1 IO2 6 2 A-1 6 2 6 2 6 2 6 2 6 2 IO3 7 3 A 7 3 7 3 7 3 7 3 7 3 Phase Instruct. Address Dummy D1 D2 D3 D4 11.2.4 Read Unique ID (RUID 4Ch) The Read Identification (RUID) command provides read access to factory set read only 64 bit number that is unique to each device. The RUID instruction is shifted on SI followed by four dummy bytes or 16 dummy bytes QPI (32 clock cycles). This latency period (i.e., dummy bytes) allows the device's internal circuitry enough time to access data at the initial address. During latency cycles, the data value on IO0-IO3 are "don't care" and may be high impedance. Then the 8 bytes of Unique ID will be shifted sequentially out on SO / IO1. Continued shifting of output beyond the end of the defined Unique ID address space will provide undefined data. The RUID command sequence is terminated by driving CS# to the logic high state anytime during data output. Figure 11.7 Read Unique ID (RUID) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1 6362 61605958575655 Phase Instruction Dummy Byte 1 Dummy Byte 4 5 4 3 2 1 0 64 bit Unique ID This command is also supported in QPI mode. In QPI mode the instruction is shifted in on IO0-IO3 and the returning data is shifted out on IO0-IO3. Figure 11.8 Read Unique ID (RUID) QPI Mode Command CS# SCLK IO0 4 0 60 56 4 8 4 0 IO1 5 1 61 57 5 9 5 1 IO2 6 2 62 58 6 10 6 2 IO3 7 3 63 59 7 11 7 3 Phase Instruction Dummy 1 Dummy 2 Dummy 3 Document Number: 002-03631 Rev. *C Dummy 13Dummy 14Dummy 15Dummy 16 64 bit Unique ID Page 82 of 147 PRELIMINARY 11.3 S25FS064S Register Access Commands 11.3.1 Read Status Register-1 (RDSR1 05h) The Read Status Register-1 (RDSR1) command allows the Status Register-1 contents to be read from SO/IO1. The volatile version of Status Register-1 (SR1V) contents may be read at any time, even while a program, erase, or write operation is in progress. It is possible to read Status Register-1 continuously by providing multiples of eight clock cycles. The status is updated for each eight cycle read. The maximum clock frequency for the RDSR1 (05h) command is 133 MHz. Figure 11.9 Read Status Register-1 (RDSR1) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 O2-IO3 Phase Instruction Status Updated Status This command is also supported in QPI mode. In QPI mode the instruction is shifted in on IO0-IO3 and the returning data is shifted out on IO0-IO3. Figure 11.10 Read Status Register-1 (RDSR1) QPI Mode Command CS# SCLK IO0 4 0 4 0 4 0 4 0 IO1 5 1 5 1 5 1 5 1 IO2 6 2 6 2 6 2 6 2 IO3 7 3 7 3 7 3 7 3 Phase Instruct. Status Updated Status Updated Status 11.3.2 Read Status Register-2 (RDSR2 07h) The Read Status Register-2 (RDSR2) command allows the Status Register-2 contents to be read from SO/IO1. The Status Register-2 contents may be read at any time, even while a program, erase, or write operation is in progress. It is possible to read the Status Register-2 continuously by providing multiples of eight clock cycles. The status is updated for each eight cycle read. The maximum clock frequency for the RDSR2 command is 133 MHz. Figure 11.11 Read Status Register-2 (RDSR2) Command CS# SCK SI_IO0 7 6 5 4 3 2 SO_IO1 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 IO2-IO3 Phase Instruction Status Updated Status In QPI mode, status register 2 may be read via the Read Any Register command, see Section 11.3.13, Read Any Register (RDAR 65h) on page 90. Document Number: 002-03631 Rev. *C Page 83 of 147 PRELIMINARY S25FS064S 11.3.3 Read Configuration Register (RDCR 35h) The Read Configuration Register (RDCR) commands allows the volatile Configuration Registers (CR1V) contents to be read from SO/IO1. It is possible to read CR1V continuously by providing multiples of eight clock cycles. The Configuration Register contents may be read at any time, even while a program, erase, or write operation is in progress. Figure 11.12 Read Configuration Register (RDCR) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 SO_IO1 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 IO2-IO3 Phase Instruction Register Read Repeat Register Read In QPI mode, configuration register 1 may be read via the Read Any Register command, see Section 11.3.13, Read Any Register (RDAR 65h) on page 90 11.3.4 Write Registers (WRR 01h) The Write Registers (WRR) command allows new values to be written to both the Status Register 1 and Configuration Register 1. Before the Write Registers (WRR) command can be accepted by the device, a Write Enable (WREN) command must be received. After the Write Enable (WREN) command has been decoded successfully, the device will set the Write Enable Latch (WEL) in the Status Register to enable any write operations. The Write Registers (WRR) command is entered by shifting the instruction and the data bytes on SI/IO0. The Status Register is one data byte in length. The WRR operation first erases the register then programs the new value as a single operation. The Write Registers (WRR) command will set the P_ERR or E_ERR bits if there is a failure in the WRR operation. See Section 9.6.1.2, Status Register 1 Volatile (SR1V) on page 50 for a description of the error bits. Any Status or Configuration Register bit reserved for the future must be written as a "0". CS# must be driven to the logic high state after the eighth or sixteenth bit of data has been latched. If not, the Write Registers (WRR) command is not executed. If CS# is driven high after the eighth cycle then only the Status Register 1 is written; otherwise, after the sixteenth cycle both the Status and Configuration Registers are written. As soon as CS# is driven to the logic high state, the selftimed Write Registers (WRR) operation is initiated. While the Write Registers (WRR) operation is in progress, the Status Register may still be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a "1" during the self-timed Write Registers (WRR) operation, and is a "0" when it is completed. When the Write Registers (WRR) operation is completed, the Write Enable Latch (WEL) is set to a "0". The maximum clock frequency for the WRR command is 133 MHz. Figure 11.13 Write Register (WRR) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction Input Status Reg-1 Input Conf Reg-1 Input Conf Reg-2 Input Conf Reg-3 This command is also supported in QPI mode. In QPI mode the instruction and data is shifted in on IO0-IO3. Document Number: 002-03631 Rev. *C Page 84 of 147 PRELIMINARY S25FS064S Figure 11.14 Write Register (WRR) Command Sequence QPI CS# SCLK IO0 4 0 4 0 4 0 4 0 4 0 IO1 5 1 5 1 5 1 5 1 5 1 IO2 6 2 6 2 6 2 6 2 6 2 IO3 7 3 7 3 7 3 7 3 7 3 Phase Instruct. Input Status 1 Input Config 1 Input Config 2 Input Config 3 The Write Registers (WRR) command allows the user to change the values of the Block Protect (BP2, BP1, and BP0) bits in either the non-volatile Status Register 1 or in the volatile Status Register 1, to define the size of the area that is to be treated as read-only. The BPNV_O bit (CR1NV[3]) controls whether WRR writes the non-volatile or volatile version of Status Register 1. When CR1NV[3]=0 WRR writes SR1NV[4:2]. When CR1NV[3]=1 WRR writes SR1V[4:2]. The Write Registers (WRR) command also allows the user to set the Status Register Write Disable (SRWD) bit to a "1" or a "0". The Status Register Write Disable (SRWD) bit and Write Protect (WP#) signal allow the BP bits to be hardware protected. When the Status Register Write Disable (SRWD) bit of the Status Register is a "0" (its initial delivery state), it is possible to write to the Status Register provided that the Write Enable Latch (WEL) bit has previously been set by a Write Enable (WREN) command, regardless of the whether Write Protect (WP#) signal is driven to the logic high or logic low state. When the Status Register Write Disable (SRWD) bit of the Status Register is set to a "1", two cases need to be considered, depending on the state of Write Protect (WP#): If Write Protect (WP#) signal is driven to the logic high state, it is possible to write to the Status and Configuration Registers provided that the Write Enable Latch (WEL) bit has previously been set to a "1" by initiating a Write Enable (WREN) command. If Write Protect (WP#) signal is driven to the logic low state, it is not possible to write to the Status and Configuration Registers even if the Write Enable Latch (WEL) bit has previously been set to a "1" by a Write Enable (WREN) command. Attempts to write to the Status and Configuration Registers are rejected, not accepted for execution, and no error indication is provided. As a consequence, all the data bytes in the memory area that are protected by the Block Protect (BP2, BP1, BP0) bits of the Status Register, are also hardware protected by WP#. The WP# hardware protection can be provided: by setting the Status Register Write Disable (SRWD) bit after driving Write Protect (WP#) signal to the logic low state; or by driving Write Protect (WP#) signal to the logic low state after setting the Status Register Write Disable (SRWD) bit to a "1". The only way to release the hardware protection is to pull the Write Protect (WP#) signal to the logic high state. If WP# is permanently tied high, hardware protection of the BP bits can never be activated. . Table 11.2 Block Protection Modes WP# SRWD Bit 1 1 1 0 0 0 0 1 Memory Content Mode Write Protection of Registers Software Protected Status and Configuration Registers are Writable (if WREN command has set the WEL bit). The values in the SRWD, BP2, BP1, and BP0 bits and those in the Configuration Register can be changed Protected against Page Program, Sector Erase, and Bulk Erase Ready to accept Page Program, and Sector Erase commands Hardware Protected Status and Configuration Registers are Hardware Write Protected. The values in the SRWD, BP2, BP1, and BP0 bits and those in the Configuration Register cannot be changed Protected against Page Program, Sector Erase, and Bulk Erase Ready to accept Page Program or Erase commands Protected Area Unprotected Area Notes: 1. The Status Register originally shows 00h when the device is first shipped from Cypress to the customer. 2. Hardware protection is disabled when Quad Mode is enabled (CR1V[1] = 1). WP# becomes IO2; therefore, it cannot be utilized. Document Number: 002-03631 Rev. *C Page 85 of 147 PRELIMINARY S25FS064S 11.3.5 Write Enable (WREN 06h) The Write Enable (WREN) command sets the Write Enable Latch (WEL) bit of the Status Register 1 (SR1V[1]) to a "1". The Write Enable Latch (WEL) bit must be set to a "1" by issuing the Write Enable (WREN) command to enable write, program and erase commands. CS# must be driven into the logic high state after the eighth bit of the instruction byte has been latched in on SI/IO0. Without CS# being driven to the logic high state after the eighth bit of the instruction byte has been latched in on SI/IO0, the write enable operation will not be executed. Figure 11.15 Write Enable (WREN) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction This command is also supported in QPI mode. In QPI mode the instruction is shifted in on IO0-IO3. Figure 11.16 Write Enable (WREN) Command Sequence QPI Mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 3 Phase Instruction 11.3.6 Write Disable (WRDI 04h) The Write Disable (WRDI) command clears the Write Enable Latch (WEL) bit of the Status Register-1 (SR1V[1]) to a "0". The Write Enable Latch (WEL) bit may be cleared to a "0" by issuing the Write Disable (WRDI) command to disable Page Program (PP), Sector Erase (SE), Bulk Erase (BE), Write Registers (WRR or WRAR), OTP Program (OTPP), and other commands, that require WEL be set to "1" for execution. The WRDI command can be used by the user to protect memory areas against inadvertent writes that can possibly corrupt the contents of the memory. The WRDI command is ignored during an embedded operation while WIP bit =1. CS# must be driven into the logic high state after the eighth bit of the instruction byte has been latched in on SI/IO0. Without CS# being driven to the logic high state after the eighth bit of the instruction byte has been latched in on SI/IO0, the write disable operation will not be executed. Figure 11.17 Write Disable (WRDI) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Document Number: 002-03631 Rev. *C Instruction Page 86 of 147 PRELIMINARY S25FS064S This command is also supported in QPI mode. In QPI mode the instruction is shifted in on IO0-IO3. Figure 11.18 Write Disable (WRDI) Command Sequence QPI Mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 3 Phase Instruction 11.3.7 Clear Status Register (CLSR 30h or 82h) The Clear Status Register command resets bit SR1V[5] (Erase Fail Flag) and bit SR1V[6] (Program Fail Flag). It is not necessary to set the WEL bit before a Clear Status Register command is executed. The Clear Status Register command will be accepted even when the device remains busy with WIP set to 1, as the device does remain busy when either error bit is set. The WEL bit will be unchanged after this command is executed. The legacy Clear Status Register (CLSR 30h) instruction may be disabled and the 30h instruction value instead used for a program / erase resume command - see Section 9.6.5, Configuration Register 3 on page 57. The Clear Status Register alternate instruction (CLSR 82h) is always available to clear the status register. Figure 11.19 Clear Status Register (CLSR) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction This command is also supported in QPI mode. In QPI mode the instruction is shifted in on IO0-IO3. Figure 11.20 Clear Status Register (CLSR) QPI Mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 3 Phase Instruction 11.3.8 ECC Status Register Read (ECCRD 19h or 4EECRD 18h) To read the ECC Status Register, the command is followed by the ECC unit (16 Bytes) address, the four least significant bits (LSB) of address must be set to zero. This is followed by the number of dummy cycles selected by the read latency value in CR2V[3:0]. Then the 8-bit contents of the ECC Register, for the ECC unit selected, are shifted out on SO/IO1 16 times, once for each byte in the ECC Unit. If CS# remains low the next ECC unit status is sent through SO/IO1 16 times, once for each byte in the ECC Unit, this Document Number: 002-03631 Rev. *C Page 87 of 147 PRELIMINARY S25FS064S continues until CS# goes high. The maximum operating clock frequency for the ECC READ command is 133 MHz. See Section 11.5.1.1, Automatic ECC on page 103 for details on ECC unit. Figure 11.21 ECC Status Register Read Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1 7 6 5 4 3 2 1 0 IO2-IO3 Phase Instruction Address Dummy Cycles Data Notes: 1. A = MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7]=1 with command 19h. 2. A = MSB of address = 31 with command 18h This command is also supported in QPI mode. In QPI mode the instruction and address is shifted in and returning data out on IO0IO3. Figure 11.22 ECC Status Register Read QPI Mode, Command Sequence CS# SCLK IO0 4 0 A-3 4 0 4 0 4 0 4 0 4 0 IO1 5 1 A-2 5 1 5 1 5 1 5 1 5 1 IO2 6 2 A-1 6 2 6 2 6 2 6 2 6 2 IO3 7 3 A 7 3 7 3 7 3 7 3 7 3 Phase Instruct. Address Dummy Data Data Data Data Notes: 1. A = MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7]=1 with command 19h. 2. A = MSB of address = 31 with command 18h 11.3.9 Program NVDLR (PNVDLR 43h) Before the Program NVDLR (PNVDLR) command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device. After the Write Enable (WREN) command has been decoded successfully, the device will set the Write Enable Latch (WEL) to enable the PNVDLR operation. The PNVDLR command is entered by shifting the instruction and the data byte on SI/IO0. CS# must be driven to the logic high state after the eighth (8th) bit of data has been latched. If not, the PNVDLR command is not executed. As soon as CS# is driven to the logic high state, the self-timed PNVDLR operation is initiated. While the PNVDLR operation is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a "1" during the self-timed PNVDLR cycle, and is a 0. when it is completed. The PNVDLR operation can report a program error in the P_ERR bit of the status register. When the PNVDLR operation is completed, the Write Enable Latch (WEL) is set to a "0" The maximum clock frequency for the PNVDLR command is 133 MHz. Document Number: 002-03631 Rev. *C Page 88 of 147 PRELIMINARY S25FS064S Figure 11.23 Program NVDLR (PNVDLR) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction Input Data 11.3.10 Write VDLR (WVDLR 4Ah) Before the Write VDLR (WVDLR) command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device. After the Write Enable (WREN) command has been decoded successfully, the device will set the Write Enable Latch (WEL) to enable WVDLR operation. The WVDLR command is entered by shifting the instruction and the data byte on SI/IO0. CS# must be driven to the logic high state after the eighth (8th) bit of data has been latched. If not, the WVDLR command is not executed. As soon as CS# is driven to the logic high state, the WVDLR operation is initiated with no delays. The maximum clock frequency for the WVDLR command is 133 MHz. Figure 11.24 Write VDLR (WVDLR) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction Input Data 11.3.11 Data Learning Pattern Read (DLPRD 41h) The instruction is shifted on SI/IO0, then the 8-bit DLP is shifted out on SO/IO1. It is possible to read the DLP continuously by providing multiples of eight clock cycles. The maximum operating clock frequency for the DLPRD command is 133MHz. Figure 11.25 DLP Read (DLPRD) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 IO2-IO3 Phase Instruction DY Register Read Repeat Register Read 11.3.12 Enter 4 Byte Address Mode (4BAM B7h): The enter 4 Byte Address Mode (4BAM) command sets the volatile Address Length bit (CR2V[7]) to 1 to change most 3 Byte address commands to require 4 Bytes of address. The Read SFDP (RSFDP) command is the only 3 Byte command that is not affected by the Address Length bit. RSFDP is required by the JEDEC JESD216 Rev B standard to always have only 3 Bytes of address. A hardware or software reset is required to exit the 4 Byte address mode. Document Number: 002-03631 Rev. *C Page 89 of 147 PRELIMINARY S25FS064S Figure 11.26 Enter 4 Byte Address Mode (4BEN B7h) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction This command is also supported in QPI mode. In QPI mode the instruction is shifted in on IO0-IO3. Figure 11.27 Enter 4 Byte Address QPI Mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 3 Phase Instruction 11.3.13 Read Any Register (RDAR 65h) The Read Any Register (RDAR) command provides a way to read all device registers - non-volatile and volatile. The instruction is followed by a 3 or 4 Byte address (depending on the address length configuration CR2V[7], followed by a number of latency (dummy) cycles set by CR2V[3:0]. Then the selected register contents are returned. If the read access is continued the same addressed register contents are returned until the command is terminated - only one register is read by each RDAR command. Reading undefined locations provides undefined data. The RDAR command may be used during embedded operations to read status register-1 (SR1V). The RDAR command is not used for reading registers that act as a window into a larger array: ECCSR, PPBAR, and DYBAR. There are separate commands required to select and read the location in the array accessed. The RDAR command will read invalid data from the PASS register locations if the ASP Password protection mode is selected by programming ASPR[2] to 0. Table 11.3 Register Address Map Byte Address (Hex) Register Name 00000000 SR1NV 00000001 N/A 00000002 CR1NV 00000003 CR2NV 00000004 CR3NV 00000005 CR4NV ... N/A 00000010 NVDLR ... N/A Document Number: 002-03631 Rev. *C Description Non-volatile Status and Configuration Registers Non-volatile Data Learning Register Page 90 of 147 PRELIMINARY S25FS064S Table 11.3 Register Address Map (Continued) Byte Address (Hex) Register Name 00000020 PASS[7:0] 00000021 PASS[15:8] 00000022 PASS[23:16] 00000023 PASS[31:24] 00000024 PASS[39:32] 00000025 PASS[47:40] 00000026 PASS[55:48] 00000027 PASS[63:56] ... N/A 00000030 ASPR[7:0] 00000031 ASPR[15:8] ... N/A 00800000 SR1V 00800001 SR2V 00800002 CR1V 00800003 CR2V 00800004 CR3V 00800005 CR4V ... N/A 00800010 VDLR ... N/A 00800040 PPBL ... N/A Description Non-volatile Password Register Non-volatile ASP Register Volatile Status and Configuration Registers Volatile Data Learning Register Volatile PPB Lock Register Figure 11.28 Read Any Register Read Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1 7 6 5 4 3 2 1 0 IO2-IO3 Phase Instruction Address Dummy Cycles Data Note: 1. A = MSB of address = 23 for Address length CR2V[7] = 0, or 31 for CR2V[7]=1 This command is also supported in QPI mode. In QPI mode the instruction and address is shifted in and returning data out on IO0IO3. Document Number: 002-03631 Rev. *C Page 91 of 147 PRELIMINARY S25FS064S Figure 11.29 Read Any Register, QPI Mode, Command Sequence CS# SCLK IO0 4 0 A-3 4 0 4 0 4 0 4 0 4 0 IO1 5 1 A-2 5 1 5 1 5 1 5 1 5 1 IO2 6 2 A-1 6 2 6 2 6 2 6 2 6 2 IO3 7 3 A 7 3 7 3 7 3 7 3 7 3 Phase Instruct. Address Dummy Data Data Data Data Note 1. A = MSB of address = 23 for Address length CR2V[7] = 0, or 31 for CR2V[7]=1 11.3.14 Write Any Register (WRAR 71h) The Write Any Register (WRAR) command provides a way to write any device register - non-volatile or volatile. The instruction is followed by a 3 or 4 Byte address (depending on the address length configuration CR2V[7], followed by one byte of data to write in the address selected register. Before the WRAR command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The WIP bit in SR1V may be checked to determine when the operation is completed. The P_ERR and E_ERR bits in SR1V may be checked to determine if any error occurred during the operation. Some registers have a mixture of bit types and individual rules controlling which bits may be modified. Some bits are read only, some are OTP. Read only bits are never modified and the related bits in the WRAR command data byte are ignored without setting a program or erase error indication (P_ERR or E_ERR in SR1V). Hence, the value of these bits in the WRAR data byte do not matter. OTP bits may only be programmed to the level opposite of their default state. Writing of OTP bits back to their default state is ignored and no error is set. Non-volatile bits which are changed by the WRAR data, require non-volatile register write time (tW) to be updated. The update process involves an erase and a program operation on the non-volatile register bits. If either the erase or program portion of the update fails the related error bit and WIP in SR1V will be set to 1. Volatile bits which are changed by the WRAR data, require the volatile register write time (tCS) to be updated. Status Register-1 may be repeatedly read (polled) to monitor the Write-In-Progress (WIP) bit (SR1V[0]) and the error bits (SR1V[6,5]) to determine when the register write is completed or failed. If there is a write failure, the clear status command is used to clear the error status and enable the device to return to standby state. However, the PPBL register can not be written by the WRAR command. Only the PPB Lock Bit Write (PLBWR) command can write the PPBL register. The command sequence and behavior is the same as the PP or 4PP command with only a single byte of data provided. See Section 11.5.2, Page Program (PP 02h or 4PP 12h) on page 104 The address map of the registers is the same as shown for Section 11.3.13, Read Any Register (RDAR 65h) on page 90 11.3.15 Set Burst Length (SBL C0h) The Set Burst Length (SBL) command is used to configure the Burst Wrap feature. Burst Wrap is used in conjunction with Quad I/O Read, DDR Quad I/O Read and Quad Output Read, in legacy SPI or QPI mode, to access a fixed length and alignment of data. Certain applications can benefit from this feature by improving the overall system code execution performance. The Burst Wrap feature allows applications that use cache, to start filling a cache line with instruction or data from a critical address first, then fill the remainder of the cache line afterwards within a fixed length (8/16/32/64-bytes) of data, without issuing multiple read commands. The Set Burst Length (SBL) command writes the CR4V register bits 4, 1, and 0 to enable or disable the wrapped read feature and set the wrap boundary. Other bits of the CR4V register are not affected by the SBL command. When enabled the wrapped read Document Number: 002-03631 Rev. *C Page 92 of 147 PRELIMINARY S25FS064S feature changes the related read commands from sequentially reading until the command ends, to reading sequentially wrapped within a group of bytes. When CR4V[4]=1, the wrap mode is not enabled and unlimited length sequential read is performed. When CR4V[4]=0, the wrap mode is enabled and a fixed length and aligned group of 8, 16, 32, or 64 bytes is read starting at the byte address provided by the read command and wrapping around at the group alignment boundary. The group of bytes is of length and aligned on an 8, 16, 32, or 64 byte boundary. CR4V[1:0] selects the boundary. See Section 9.6.6.2, Configuration Register 4 Volatile (CR4V) on page 61. The starting address of the read command selects the group of bytes and the first data returned is the addressed byte. Bytes are then read sequentially until the end of the group boundary is reached. If the read continues the address wraps to the beginning of the group and continues to read sequentially. This wrapped read sequence continues until the command is ended by CS# returning high. Table 11.4 Example Burst Wrap Sequences SBL Data Value (Hex) Wrap Boundary (Bytes) Start Address (Hex) 1X Sequential XXXXXX03 03, 04, 05, 06, 07, 08, 09, 0A, 0B, 0C, 0D, 0E, 0F, 10, 11, 12, 13, 14, 15, 16, 17, 18, ... 00 8 XXXXXX00 00, 01, 02, 03, 04, 05, 06, 07, 00, 01, 02, ... 00 8 XXXXXX07 07, 00, 01, 02, 03, 04, 05, 06, 07, 00, 01, ... 01 16 XXXXXX02 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B, 0C, 0D, 0E, 0F, 00, 01, 02, 03, ... 01 16 XXXXXX0C 0C, 0D, 0E, 0F, 00, 01, 02, 03, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B, 0C, 0D, 0E, ... 02 32 XXXXXX0A 0A, 0B, 0C, 0D, 0E, 0F, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 1A, 1B, 1C, 1D, 1E, 1F, 00, 01, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B, 0C, 0D, 0E, 0F, ... 02 32 XXXXXX1E 1E, 1F, 00, 01, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B, 0C, 0D, 0E, 0F, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 1A, 1B, 1C, 1D, 1E, 1F, 00, ... 03 64 XXXXXX03 03, 04, 05, 06, 07, 08, 09, 0A, 0B, 0C, 0D, 0E, 0F, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 1A, 1B, 1C, 1D, 1E, 1F, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 2A, 2B, 2C, 2D, 2E, 2F, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 3A, 3B, 3C, 3D, 3E, 3F 00, 01, 02, ... 03 64 XXXXXX2E 2E, 2F, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 3A, 3B, 3C, 3D, 3E, 3F, 00, 01, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B, 0C, 0D, 0E, 0F, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 1A, 1B, 1C, 1D, 1E, 1F, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 2A, 2B, 2C, 2D, , ... Document Number: 002-03631 Rev. *C Address Sequence (Hex) Page 93 of 147 PRELIMINARY S25FS064S The power-on reset, hardware reset, or software reset default burst length can be changed by programming CR4NV with the desired value using the WRAR command. Figure 11.30 Set Burst Length Command Sequence Quad I/O Mode CS SCLK IO0 7 6 5 4 X X X X X X WL4 X IO1 X X X X X X WL5 X IO2 X X X X X X WL6 X IO3 X X X X X X X X Phase 3 2 1 0 Instruction Don't Care Wrap Figure 11.31 Set Burst Length Command Sequence QPI Mode CS SCLK IO0 4 0 X X X X X X WL4 X IO1 5 1 X X X X X X WL5 X IO2 6 2 X X X X X X WL6 X IO3 7 3 X X X X X X X X Phase Instruct. Document Number: 002-03631 Rev. *C Don't Care Wrap Page 94 of 147 PRELIMINARY 11.4 S25FS064S Read Memory Array Commands Read commands for the main Flash array provide many options for prior generation SPI compatibility or enhanced performance SPI: Some commands transfer address or data on each rising edge of SCK. These are called Single Data Rate commands (SDR). Some SDR commands transfer address one bit per rising edge of SCK and return data 1bit of data per rising edge of SCK. These are called Single width commands. Some SDR commands transfer address one bit per rising edge of SCK and return data 2 or 4 bits per rising edge of SCK. These are called Dual Output for 2 bit, Quad Output for 4 bit. Some SDR commands transfer both address and data 2 or 4 bits per rising edge of SCK. These are called Dual I/O for 2 bit, Quad I/O, and QPI for 4 bit. Some SDR commands in QPI mode also transfers instructions, address and data 4 bits per rising edge of SCK. Some commands transfer address and data on both the rising edge and falling edge of SCK. These are called Double Data Rate (DDR) commands. There are DDR commands for 4 bits of address or data per SCK edge. These are called Quad I/O DDR and QPI DDR for 4 bit per edge transfer. All of these commands, except QPI Read, begin with an instruction code that is transferred one bit per SCK rising edge. QPI Read transfers the instruction 4 bits per SCK rising edge.The instruction is followed by either a 3 or 4 byte address transferred at SDR or DDR. Commands transferring address or data 2 or 4 bits per clock edgeare called Multiple I/O (MIO) commands. These devices may be configured to take a 4 byte address from the host system with the traditional 3 byte address commands. The 4 byte address mode for traditional commands is activated by setting the Address Length bit in configuration register 2 to "0". The higher order address bits above A23 in the 4 byte address commands, or commands using 4 Byte Address mode are not relevant and are ignored. The Quad I/O and QPI commands provide a performance improvement option controlled by mode bits that are sent following the address bits. The mode bits indicate whether the command following the end of the current read will be another read of the same type, without an instruction at the beginning of the read. These mode bits give the option to eliminate the instruction cycles when doing a series of Quad read accesses. Some commands require delay cycles following the address or mode bits to allow time to access the memory array - read latency. The delay or read latency cycles are traditionally called dummy cycles. The dummy cycles are ignored by the memory thus any data provided by the host during these cycles is "don't care" and the host may also leave the SI/IO1 signal at high impedance during the dummy cycles. When MIO commands are used the host must stop driving the IO signals (outputs are high impedance) before the end of last dummy cycle. When DDR commands are used the host must not drive the I/O signals during any dummy cycle. The number of dummy cycles varies with the SCK frequency or performance option selected via the Configuration Register 2 (CR2V[3:0]) Latency Code. Dummy cycles are measured from SCK falling edge to next SCK falling edge. SPI outputs are traditionally driven to a new value on the falling edge of each SCK. Zero dummy cycles means the returning data is driven by the memory on the same falling edge of SCK that the host stops driving address or mode bits. The DDR commands may optionally have an 8 edge Data Learning Pattern (DLP) driven by the memory, on all data outputs, in the dummy cycles immediately before the start of data. The DLP can help the host memory controller determine the phase shift from SCK to data edges so that the memory controller can capture data at the center of the data eye. When using SDR I/O commands at higher SCK frequencies (>50 MHz), an LC that provides 1 or more dummy cycles should be selected to allow additional time for the host to stop driving before the memory starts driving data, to minimize I/O driver conflict. When using DDR I/O commands with the DLP enabled, an LC that provides 5 or more dummy cycles should be selected to allow 1 cycle of additional time for the host to stop driving before the memory starts driving the 4 cycle DLP. Each read command ends when CS# is returned High at any point during data return. CS# must not be returned High during the mode or dummy cycles before data returns as this may cause mode bits to be captured incorrectly; making it indeterminate as to whether the device remains in continuous read mode. 11.4.1 Read (Read 03h or 4READ 13h) The instruction 03h (CR2V[7]=0) is followed by a 3-byte address (A23-A0) or 03h (CR2V[7]=1) is followed by a 4-byte address (A31-A0) or Document Number: 002-03631 Rev. *C Page 95 of 147 PRELIMINARY S25FS064S 13h is followed by a 4-byte address (A31-A0) Then the memory contents, at the address given, are shifted out on SO/IO1 . The maximum operating clock frequency for the READ command is 50 MHz. The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued indefinitely. Figure 11.32 Read Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 IO2-IO3 Phase Instruction Address Data 1 Data N Note: 1. A = MSB of address = 23 for CR2V[7]=0, or 31 for CR2V[7]=1 or command 13h 11.4.2 Fast Read (FAST_READ 0Bh or 4FAST_READ 0Ch) The instruction 0Bh (CR2V[7]=0) is followed by a 3-byte address (A23-A0) or 0Bh (CR2V[7]=1) is followed by a 4-byte address (A31-A0) or 0Ch is followed by a 4-byte address (A31-A0) The address is followed by dummy cycles depending on the latency code set in the Configuration Register CR2V[3:0]. The dummy cycles allow the device internal circuits additional time for accessing the initial address location. During the dummy cycles the data value on SO/IO1 is "don't care" and may be high impedance. Then the memory contents, at the address given, are shifted out on SO/IO1. The maximum operating clock frequency for FAST READ command is 133 MHz. The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued indefinitely. Figure 11.33 Fast Read (FAST_READ) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1 7 6 5 4 3 2 1 0 IO2-IO3 Phase Instruction Address Dummy Cycles Data 1 Note: 1. A = MSB of address = 23 for CR2V[7]=0, or 31 for CR2V[7]=1 or command 0Ch 11.4.3 Dual Output Read (DOR 3Bh or 4DOR 3Ch) The instruction 3Bh (CR2V[0]=0) is followed by a 3-byte address (A23-A0) or Document Number: 002-03631 Rev. *C Page 96 of 147 PRELIMINARY S25FS064S 3Bh (CR2V[0]=1) is followed by a 4-byte address (A31-A0) or 3Ch is followed by a 4-byte address (A31-A0) The address is followed by dummy cycles depending on the latency code set in the Configuration Register CR3V[3:0]. The dummy cycles allow the device internal circuits additional time for accessing the initial address location. During the dummy cycles the data value on IO0 (SI) and IO1 (S0) is "don't care" and may be high impedance. Then the memory contents, at the address given, is shifted out two bits at a time through IO0 (SI) and IO1 (SO). Two bits are shifted out at the SCK frequency by the falling edge of the SCK signal. The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued indefinitely. Figure 11.34 Dual Output Read Command Sequence CS# SCK IO0 7 6 5 4 3 2 1 0 A 30 29 0 IO1 Phase Instruction Address Dummy Cycles 6 4 2 0 6 4 2 0 7 5 3 1 7 5 3 1 Data 1 Data 2 Note: 1. A = MSB of address = 23 for CR2V[7]=0 or 31 for CR2V[7]=1 or command 3Ch 11.4.4 Quad Output Read (QOR 6Bh or 4QOR 6Ch) The instruction 6Bh (CR2V[0]=0) is followed by a 3-byte address (A23-A0) or 6Bh (CR2V[0]=1) is followed by a 4-byte address (A31-A0) or 6Ch is followed by a 4-byte address (A31-A0) The address is followed by dummy cycles depending on the latency code set in the Configuration Register CR3V[3:0]. The dummy cycles allow the device internal circuits additional time for accessing the initial address location. During the dummy cycles the data value on IO0 - IO3 is "don't care" and may be high impedance. Then the memory contents, at the address given, is shifted out four bits at a time through IO0 - IO3. Each nibble (4 bits) is shifted out at the SCK frequency by the falling edge of the SCK signal. The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued indefinitely. Document Number: 002-03631 Rev. *C Page 97 of 147 PRELIMINARY S25FS064S Figure 11.35 Quad Output Read Command Sequence CS# SCK IO0 4 0 4 0 4 0 4 0 4 0 4 IO1 5 1 5 1 5 1 5 1 5 1 5 IO2 6 2 6 2 6 2 6 2 6 2 6 IO3 7 3 7 3 7 3 7 3 7 3 7 D3 D4 Phase 7 6 5 4 3 2 1 0 A Instruction 1 0 Address Dummy D1 D2 D5 Note: 11.4.5 Dual I/O Read (DIOR BBh or 4DIOR BCh) A = MSB of address = 23 for CR2V[7]=0, or 31 for CR2V[7]=1 or command 6Ch The instruction BBh (CR2V[7]=0) is followed by a 3-byte address (A23-A0) or BBh (CR2V[7]=1) is followed by a 4-byte address (A31-A0) or BCh is followed by a 4-byte address (A31-A0) The Dual I/O Read commands improve throughput with two I/O signals IO0 and IO1. This command takes input of the address and returns read data two bits per SCK rising edge. In some applications, the reduced address input and data output time might allow for code execution in place (XIP) i.e. directly from the memory device. The maximum operating clock frequency for Dual I/O Read is 133 MHz. The Dual I/O Read command has continuous read mode bits that follow the address so, a series of Dual I/O Read commands may eliminate the 8 bit instruction after the first Dual I/O Read command sends a mode bit pattern of Axh that indicates the following command will also be a Dual I/O Read command. The first Dual I/O Read command in a series starts with the 8 bit instruction, followed by address, followed by four cycles of mode bits, followed by an optional latency period. If the mode bit pattern is Axh the next command is assumed to be an additional Dual I/O Read command that does not provide instruction bits. That command starts with address, followed by mode bits, followed by optional latency. Variable latency may be added after the mode bits are shifted into IO0 and IO1 before data begins shifting out of IO0 and IO1. This latency period (dummy cycles) allows the device internal circuitry enough time to access data at the initial address. During the dummy cycles, the data value on IO0 and IO1 are "don't care" and may be high impedance. The number of dummy cycles is determined by the frequency of SCK. The latency is configured in CR2V[3:0]. The continuous read feature removes the need for the instruction bits in a sequence of read accesses and greatly improves code execution (XIP) performance. The upper nibble (bits 7-4) of the Mode bits control the length of the next Dual I/O Read command through the inclusion or exclusion of the first byte instruction code. The lower nibble (bits 3-0) of the Mode bits are "don't care" ("x") and may be high impedance. If the Mode bits equal Axh, then the device remains in Dual I/O Continuous Read Mode and the next address can be entered (after CS# is raised high and then asserted low) without the BBh or BCh instruction, as shown in Figure 11.36; thus, eliminating eight cycles of the command sequence. The following sequences will release the device from Dual I/O Continuous Read mode; after which, the device can accept standard SPI commands: 1. During the Dual I/O continuous read command sequence, if the Mode bits are any value other than Axh, then the next time CS# is raised high the device will be released from Dual I/O continuous read mode. 2. Send the Mode Reset command. Note that the four mode bit cycles are part of the device's internal circuitry latency time to access the initial address after the last address cycle that is clocked into IO0 and IO1. It is important that the I/O signals be set to high-impedance at or before the falling edge of the first data out clock. At higher clock speeds the time available to turn off the host outputs before the memory device begins to drive (bus turn around) is diminished. It is allowed and may be helpful in preventing I/O signal contention, for the host system to turn off the I/O signal outputs (make them high impedance) during the last two "don't care" mode cycles or during any dummy cycles. Document Number: 002-03631 Rev. *C Page 98 of 147 PRELIMINARY S25FS064S Following the latency period the memory content, at the address given, is shifted out two bits at a time through IO0 and IO1. Two bits are shifted out at the SCK frequency at the falling edge of SCK signal. The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued indefinitely. CS# should not be driven high during mode or dummy bits as this may make the mode bits indeterminate. Figure 11.36 Dual I/O Read Command Sequence CS# SCK IO0 7 6 5 4 3 2 1 IO1 0 A-1 A Phase Instruction 2 0 6 4 2 0 6 4 2 0 6 4 2 0 3 1 7 5 3 1 7 5 3 1 7 5 3 1 Address Mode Dum Data 1 Data 2 Notes: 1. Least significant 4 bits of Mode are don't care and it is optional for the host to drive these bits. The host may turn off drive during these cycles to increase bus turn around time between Mode bits from host and returning data from the memory. 2. A = MSB of address = 23 for CR2V[7]=0, or 31 for CR2V[7]=1 or command BBh Figure 11.37 Dual I/O Continuous Read Command Sequence CS# SCK IO0 7 6 5 4 3 2 1 IO1 Phase 0 A-1 A Instruction 2 0 6 4 2 0 6 4 2 0 6 4 2 0 3 1 7 5 3 1 7 5 3 1 7 5 3 1 Address Mode Dum Data 1 Data 2 Notes: 1. Least significant 4 bits of Mode are don't care and it is optional for the host to drive these bits. The host may turn off drive during these cycles to increase bus turn around time between Mode bits from host and returning data from the memory. 2. A = MSB of address = 23 for CR2V[7]=0, or 31 for CR2V[7]=1 or command BBh 11.4.6 Quad I/O Read (QIOR EBh or 4QIOR ECh) The instruction EBh (CR2V[7]=0) is followed by a 3-byte address (A23-A0) or EBh (CR2V[7]=1) is followed by a 4-byte address (A31-A0) or ECh is followed by a 4-byte address (A31-A0) The Quad I/O Read command improves throughput with four I/O signals IO0-IO3. It allows input of the address bits four bits per serial SCK clock. In some applications, the reduced instruction overhead might allow for code execution (XIP) directly from FS-S family devices. The QUAD bit of the Configuration Register must be set (CR1V[1]=1) to enable the Quad capability of FS-S Family devices. The maximum operating clock frequency for Quad I/O Read is 133MHz. For the Quad I/O Read command, there is a latency required after the mode bits (described below) before data begins shifting out of IO0 - IO3. This latency period (i.e., dummy cycles) allows the device's internal circuitry enough time to access data at the initial address. During latency cycles, the data value on IO0 - IO3 are "don't care" and may be high impedance. The number of dummy cycles is determined by the frequency of SCK. The latency is configured in CR2V[3:0]. Following the latency period, the memory contents at the address given, is shifted out four bits at a time through IO0-IO3. Each nibble (4 bits) is shifted out at the SCK frequency by the falling edge of the SCK signal. Document Number: 002-03631 Rev. *C Page 99 of 147 PRELIMINARY S25FS064S The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued indefinitely. Address jumps can be done without the need for additional Quad I/O Read instructions. This is controlled through the setting of the Mode bits (after the address sequence, as shown in Figure 11.38 on page 100. This added feature removes the need for the instruction sequence and greatly improves code execution (XIP). The upper nibble (bits 7-4) of the Mode bits control the length of the next Quad I/O instruction through the inclusion or exclusion of the first byte instruction code. The lower nibble (bits 3-0) of the Mode bits are "don't care" ("x"). If the Mode bits equal Axh, then the device remains in Quad I/O High Performance Read Mode and the next address can be entered (after CS# is raised high and then asserted low) without requiring the EBh or ECh instruction, as shown in Figure 11.40 on page 101; thus, eliminating eight cycles for the command sequence. The following sequences will release the device from Quad I/O High Performance Read mode; after which, the device can accept standard SPI commands: 1. During the Quad I/O Read Command Sequence, if the Mode bits are any value other than Axh, then the next time CS# is raised high the device will be released from Quad I/O High Performance Read mode. 2. Send the Mode Reset command. Note that the two mode bit clock cycles and additional wait states (i.e., dummy cycles) allow the device's internal circuitry latency time to access the initial address after the last address cycle that is clocked into IIO0-IO3. It is important that the IO0-IO3signals be set to high-impedance at or before the falling edge of the first data out clock. At higher clock speeds the time available to turn off the host outputs before the memory device begins to drive (bus turn around) is diminished. It is allowed and may be helpful in preventing IO0-IO3 signal contention, for the host system to turn off the IO0-IO3 signal outputs (make them high impedance) during the last "don't care" mode cycle or during any dummy cycles. CS# should not be driven high during mode or dummy bits as this may make the mode bits indeterminate. In QPI mode (CR2V[6]=1) the Quad I/O instructions are sent 4 bits per SCK rising edge. The remainder of the command protocol is identical to the Quad I/O commands. Figure 11.38 Quad I/O Read Initial Access Command Sequence CS# SCLK IO0 7 6 5 0 20 4 0 4 0 4 0 4 0 4 0 4 0 IO1 21 5 1 5 1 5 1 5 1 5 1 5 1 IO2 22 6 2 6 2 6 2 6 2 6 2 6 2 IO3 A 7 3 7 3 7 3 7 3 7 3 7 3 Phase 4 3 2 1 Instruction Address Mode Dummy D1 D2 D3 D4 Note: 1. A = MSB of address = 23 for CR2V[7]=0, or 31 for CR2V[7]=1 or command ECh Figure 11.39 Quad I/O Read Initial Access Command Sequence QPI mode CS# SCLK IO0 4 0 A-3 4 0 4 0 4 0 4 0 4 0 4 0 IO1 5 1 A-2 5 1 5 1 5 1 5 1 5 1 5 1 IO2 6 2 A-1 6 2 6 2 6 2 6 2 6 2 6 2 IO3 7 3 A 7 3 7 3 7 3 7 3 7 3 7 3 Phase Instruct. Address Mode Dummy D1 D2 D3 D4 Note: 1. A = MSB of address = 23 for CR2V[7]=0, or 31 for CR2V[7]=1 or command ECh Document Number: 002-03631 Rev. *C Page 100 of 147 PRELIMINARY S25FS064S Figure 11.40 Continuous Quad I/O Read Command Sequence CS# SCK IO0 4 0 4 0 A-3 4 0 4 0 4 0 4 0 6 4 2 0 IO1 5 1 5 1 A-2 5 1 5 1 5 1 5 1 7 5 3 1 IO2 6 2 6 2 A-1 6 2 6 2 6 2 6 1 7 5 3 1 IO3 7 3 7 3 A 7 3 7 3 7 3 7 1 7 5 3 1 Phase DN-1 DN Address Mode Dummy D1 D2 D3 D4 Notes: 1. A = MSB of address = 23 for CR2V[7]=0, or 31 for CR2V[7]=1 or command ECh 2. The same sequence is used in QPI mode 11.4.7 DDR Quad I/O Read (EDh, EEh) The DDR Quad I/O Read command improves throughput with four I/O signals IO0-IO3. It is similar to the Quad I/O Read command but allows input of the address four bits on every edge of the clock. In some applications, the reduced instruction overhead might allow for code execution (XIP) directly from FS-S Family devices. The QUAD bit of the Configuration Register must be set (CR1V[1]=1) to enable the Quad capability. The instruction EDh (CR2V[7]=0) is followed by a 3-byte address (A23-A0) or EDh (CR2V[7]=1) is followed by a 4-byte address (A31-A0) or EEh is followed by a 4-byte address (A31-A0) The address is followed by mode bits. Then the memory contents, at the address given, is shifted out, in a DDR fashion, with four bits at a time on each clock edge through IO0-IO3. The maximum operating clock frequency for DDR Quad I/O Read command is 100 MHz. For DDR Quad I/O Read, there is a latency required after the last address and mode bits are shifted into the IO0-IO3 signals before data begins shifting out of IO0-IO3. This latency period (dummy cycles) allows the device's internal circuitry enough time to access the initial address. During these latency cycles, the data value on IO0-IO3are "don't care" and may be high impedance. When the Data Learning Pattern (DLP) is enabled the host system must not drive the IO signals during the dummy cycles. The IO signals must be left high impedance by the host so that the memory device can drive the DLP during the dummy cycles. The number of dummy cycles is determined by the frequency of SCK. The latency is configured in CR2V[3:0]. Mode bits allow a series of Quad I/O DDR commands to eliminate the 8 bit instruction after the first command sends a complementary mode bit pattern, as shown in Figure 11.41 and Figure 11.43. This feature removes the need for the eight bit SDR instruction sequence and dramatically reduces initial access times (improves XIP performance). The Mode bits control the length of the next DDR Quad I/O Read operation through the inclusion or exclusion of the first byte instruction code. If the upper nibble (IO[7:4]) and lower nibble (IO[3:0]) of the Mode bits are complementary (i.e. 5h and Ah) the device transitions to Continuous DDR Quad I/O Read Mode and the next address can be entered (after CS# is raised high and then asserted low) without requiring the EDh or EEh instruction, eliminating eight cycles from the command sequence. The following sequences will release the device from Continuous DDR Quad I/O Read mode; after which, the device can accept standard SPI commands: 1. During the DDR Quad I/O Read Command Sequence, if the Mode bits are not complementary the next time CS# is raised high and then asserted low the device will be released from DDR Quad I/O Read mode. 2. Send the Mode Reset command. The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued indefinitely. Document Number: 002-03631 Rev. *C Page 101 of 147 PRELIMINARY S25FS064S CS# should not be driven high during mode or dummy bits as this may make the mode bits indeterminate. Note that the memory devices may drive the IOs with a preamble prior to the first data value. The preamble is a Data Learning Pattern (DLP) that is used by the host controller to optimize data capture at higher frequencies. The preamble drives the IO bus for the four clock cycles immediately before data is output. The host must be sure to stop driving the IO bus prior to the time that the memory starts outputting the preamble. The preamble is intended to give the host controller an indication about the round trip time from when the host drives a clock edge to when the corresponding data value returns from the memory device. The host controller will skew the data capture point during the preamble period to optimize timing margins and then use the same skew time to capture the data during the rest of the read operation. The optimized capture point will be determined during the preamble period of every read operation. This optimization strategy is intended to compensate for both the PVT (process, voltage, temperature) of both the memory device and the host controller as well as any system level delays caused by flight time on the PCB. Although the data learning pattern (DLP) is programmable, the following example shows example of the DLP of 34h. The DLP 34h (or 00110100) will be driven on each of the active outputs (i.e. all four IOs). This pattern was chosen to cover both "DC" and "AC" data transition scenarios. The two DC transition scenarios include data low for a long period of time (two half clocks) followed by a high going transition (001) and the complementary low going transition (110). The two AC transition scenarios include data low for a short period of time (one half clock) followed by a high going transition (101) and the complementary low going transition (010). The DC transitions will typically occur with a starting point closer to the supply rail than the AC transitions that may not have fully settled to their steady state (DC) levels. In many cases the DC transitions will bound the beginning of the data valid period and the AC transitions will bound the ending of the data valid period. These transitions will allow the host controller to identify the beginning and ending of the valid data eye. Once the data eye has been characterized the optimal data capture point can be chosen. See Section 9.6.13, SPI DDR Data Learning Registers on page 63 for more details. In QPI mode (CR2V[6]=1) the DDR Quad I/O instructions are sent 4 bits per SCK rising edge. The remainder of the command protocol is identical to the DDR Quad I/O commands. Figure 11.41 DDR Quad I/O Read Initial Access CS# SCK IO0 7 6 5 A-3 8 4 0 4 0 7 6 5 4 3 2 1 0 4 0 4 0 IO1 A-2 9 5 1 5 1 7 6 5 4 3 2 1 0 5 1 5 1 IO2 A-1 10 6 2 6 2 7 6 5 4 3 2 1 0 6 2 6 2 IO3 A 11 7 3 7 3 7 6 5 4 3 2 1 0 7 3 7 3 Phase 4 3 2 1 0 Instruction Address Mode Dummy DLP D1 D2 Notes: 1. A = MSB of address = 23 for CR2V[7]=0, or 31 for CR2V[7]=1 or command EEh 2. Example DLP of 34h (or 00110100) Figure 11.42 DDR Quad I/O Read Initial Access QPI Mode CS# SCLK IO0 4 0 A-3 8 4 0 4 0 7 6 5 4 3 2 1 0 4 0 4 0 IO1 5 1 A-2 9 5 1 5 1 7 6 5 4 3 2 1 0 5 1 5 1 IO2 6 2 A-1 10 6 2 6 2 7 6 5 4 3 2 1 0 6 2 6 2 IO3 7 3 A 11 7 3 7 3 7 6 5 4 3 2 1 0 7 3 7 3 Phase Instruct. Address Mode Dummy DLP D1 D2 Notes: 1. A = MSB of address = 23 for CR2V[7]=0, or 31 for CR2V[7]=1 or command EEh 2. Example DLP of 34h (or 00110100) Document Number: 002-03631 Rev. *C Page 102 of 147 PRELIMINARY S25FS064S Figure 11.43 Continuous DDR Quad I/O Read Subsequent Access CS# SCK IO0 A-3 8 4 0 4 0 7 6 5 4 3 2 1 0 4 0 4 0 1 IO1 A-2 9 5 1 5 1 7 6 5 4 3 2 1 0 5 1 5 1 2 IO2 A-1 10 6 2 6 2 7 6 5 4 3 2 1 0 6 2 6 2 IO3 A 11 7 3 7 3 7 6 5 4 3 2 1 0 7 3 7 3 Phase Address Mode Dummy DLP D1 D2 Notes: 1. A = MSB of address = 23 for CR2V[7]=0, or 31 for CR2V[7]=1 or command EEh 2. The same sequence is used in QPI mode 3. Example DLP of 34h (or 00110100) 11.5 Program Flash Array Commands 11.5.1 Program Granularity 11.5.1.1 Automatic ECC Each 16 byte aligned and 16 byte length Programming Block has a hidden Error Correction Code (ECC) value. The data block plus ECC form an ECC unit. In combination with Error Detection and Correction (EDC) logic the ECC is used to detect and correct any single bit error found during a read access. When data is first programmed within an ECC unit the ECC value is set for the entire ECC unit. If the same ECC unit is programmed more than once the ECC value is changed to disable the EDC function. A sector erase is needed to again enable Automatic ECC on that Programming Block. The 16 byte Program Block is the smallest program granularity on which Automatic ECC is enabled. These are automatic operations transparent to the user. The transparency of the Automatic ECC feature enhances data accuracy for typical programming operations which write data once to each ECC unit but, facilitates software compatibility to previous generations of FL family of products by allowing for single byte programming and bit walking in which the same ECC unit is programmed more than once. When an ECC unit has Automatic ECC disabled, EDC is not done on data read from the ECC unit location. An ECC status register is provided for determining if ECC is enabled on an ECC unit and whether any errors have been detected and corrected in the ECC unit data or the ECC (See Section 9.6.7, ECC Status Register (ECCSR) on page 61). The ECC Status Register Read (ECCRD) command is used to read the ECC status on any ECC unit (See Section 11.3.8, ECC Status Register Read (ECCRD 19h or 4EECRD 18h) on page 87). Error Detection and Correction (EDC) is applied to all parts of the Flash address spaces other than registers. An Error Correction Code (ECC) is calculated for each group of bytes protected and the ECC is stored in a hidden area related to the group of bytes. The group of protected bytes and the related ECC are together called an ECC unit. ECC is calculated for each 16 byte aligned and length ECC unit Single Bit EDC is supported with 8 ECC bits per ECC unit, plus 1 bit for an ECC disable Flag Sector erase resets all ECC bits and ECC disable flags in a sector to the default state (enabled) ECC is programmed as part of the standard Program commands operation ECC is disabled automatically if multiple programming operations are done on the same ECC unit. Single byte programming or bit walking is allowed but disables ECC on the second program to the same 16 byte ECC unit. The ECC disable flag is programmed when ECC is disabled To re-enable ECC for an ECC unit that has been disabled, the Sector that includes the ECC unit must be erased Document Number: 002-03631 Rev. *C Page 103 of 147 PRELIMINARY S25FS064S To ensure the best data integrity provided by EDC, each ECC unit should be programmed only once so that ECC is stored for that unit and not disabled. The calculation, programming, and disabling of ECC is done automatically as part of a programming operation. The detection and correction, if needed, is done automatically as part of read operations. The host system sees only corrected data from a read operation. ECC protects the OTP region - however a second program operation on the same ECC unit will disable ECC permanently on that ECC unit (OTP is one time programmable, hence an erase operation to re-enable the ECC enable/indicator bit is prohibited) 11.5.1.2 Page Programming Page Programming is done by loading a Page Buffer with data to be programmed and issuing a programming command to move data from the buffer to the memory array. This sets an upper limit on the amount of data that can be programmed with a single programming command. Page Programming allows up to a page size (either 256 or 512 bytes) to be programmed in one operation. The page size is determined by the configuration register bit CR3V[4]. The page is aligned on the page size address boundary. It is possible to program from one bit up to a page size in each Page programming operation. It is recommended that a multiple of 16 byte length and aligned Program Blocks be written. This insures that Automatic ECC is not disabled. For the very best performance, programming should be done in full pages of 512 bytes aligned on 512 byte boundaries with each Page being programmed only once. 11.5.1.3 Single Byte Programming Single Byte Programming allows full backward compatibility to the legacy standard SPI Page Programming (PP) command by allowing a single byte to be programmed anywhere in the memory array. While single byte programming is supported, this will disable Automatic ECC on the 16 byte ECC unit, if a another byte is programmed on the same ECC unit. 11.5.2 Page Program (PP 02h or 4PP 12h) The Page Program (PP) command allows bytes to be programmed in the memory (changing bits from 1 to 0). Before the Page Program (PP) commands can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device. After the Write Enable (WREN) command has been decoded successfully, the device sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The instruction 02h (CR2V[7]=0) is followed by a 3-byte address (A23-A0) or 02h (CR2V[7]=1) is followed by a 4-byte address (A31-A0) or 12h is followed by a 4-byte address (A31-A0) and at least one data byte on SI/IO0. Depending on CR3V[4], the page size can either be 256 or 512 bytes. Up to a page can be provided on SI/IO0 after the 3-byte address with instruction 02h or 4-byte address with instruction 12h has been provided. If more data is sent to the device than the space between the starting address and the page aligned end boundary, the data loading sequence will wrap from the last byte in the page to the zero byte location of the same page and begin overwriting any data previously loaded in the page. The last page worth of data is programmed in the page. This is a result of the device being equipped with a page program buffer that is only page size in length. If less than a page of data is sent to the device, these data bytes will be programmed in sequence, starting at the provided address within the page, without having any affect on the other bytes of the same page. Using the Page Program (PP) command to load an entire page, within the page boundary, will save overall programming time versus loading less than a page into the program buffer. The programming process is managed by the Flash memory device internal control logic. After a programming command is issued, the programming operation status can be checked using the Read Status Register-1 command. The WIP bit (SR1V[0]) will indicate when the programming operation is completed. The P_ERR bit (SR1V[6]) will indicate if an error occurs in the programming operation that prevents successful completion of programming. This includes attempted programming of a protected area. Document Number: 002-03631 Rev. *C Page 104 of 147 PRELIMINARY S25FS064S Figure 11.44 Page Program (PP 02h or 4PP 12h) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction Address Input Data 1 Input Data 2 Note: 1. A = MSB of address = A23 for PP 02h with CR2V[7]=0, or A31 for PP 02h with CR2V[7]=1, or for 4PP 12h This command is also supported in QPI mode. In QPI mode the instruction, address and data is shifted in on IO0-IO3. Figure 11.45 Page Program (PP 02h or 4PP 12h) QPI Mode Command Sequence CS# SCLK IO0 4 0 A-3 4 0 4 0 4 0 4 0 4 0 IO1 5 1 A-2 5 1 5 1 5 1 5 1 5 1 IO2 6 2 A-1 6 2 6 2 6 2 6 2 6 2 IO3 7 3 A 7 3 7 3 7 3 7 3 7 3 Phase Instruct. Address Input D1 Input D2 Input D3 Input D4 Note: 1. A = MSB of address = A23 for PP 02h with CR2V[7]=0, or A31 for PP 02h with CR2V[7]=1, or for 4PP 12h 11.5.3 Quad Page Program (QPP 32h or 4QPP 34h) The Quad-input Page Program (QPP) command allows bytes to be programmed in the memory (changing bits from 1 to 0). The Quad-input Page Program (QPP) command allows up to a page of data to be loaded into the Page Buffer using four signals: IO0IO3. QPP can improve performance for PROM Programmer and applications that have slower clock speeds (< 12 MHz) by loading 4 bits of data per clock cycle. Systems with faster clock speeds do not realize as much benefit for the QPP command since the inherent page program time becomes greater than the time it takes to clock-in the data. The maximum frequency for the QPP command is 133MHz. To use Quad Page Program the Quad Enable Bit in the Configuration Register must be set (QUAD=1). A Write Enable command must be executed before the device will accept the QPP command (Status Register-1, WEL=1). The instruction 32h (CR2V[0]=0) is followed by a 3-byte address (A23-A0) or 32h (CR2V[0]=1) is followed by a 4-byte address (A31-A0) or 34h is followed by a 4-byte address (A31-A0) and at least one data byte, into the IO signals. All other functions of QPP are identical to Page Program. The QPP command sequence is shown in the figure below. Document Number: 002-03631 Rev. *C Page 105 of 147 PRELIMINARY S25FS064S Figure 11.46 Quad Page Program Command Sequence CS# SCK IO0 7 6 5 4 0 4 0 4 0 4 0 4 0 4 IO1 5 1 5 1 5 1 5 1 5 1 5 IO2 6 2 6 2 6 2 6 2 6 2 6 IO3 7 3 7 3 7 3 7 3 7 3 7 Phase 4 3 2 1 0 A Instruction 1 0 Address Data 1 Data 2 Data 3 Data 4 Data 5 ... Note: 1. A = MSB of address = A23 for QPP 32h with CR2V[7]=0, or A31 for QPP 32h with CR2V[7]=1, or for 4QPP 34h 11.6 Erase Flash Array Commands 11.6.1 Parameter Sector Erase (P4E 20h or 4P4E 21h) The main Flash array address map may be configured to overlay parameter sectors over the lowest address portion of the lowest address uniform sector (bottom parameter sectors) or over the highest address portion of the highest address uniform sector (top parameter sectors). The main Flash array address map may also be configured to have only uniform size sectors. The parameter sector configuration is controlled by the configuration bit CR3V[3]. The P4E and 4P4E commands are ignored when the device is configured for uniform sectors only (CR3V[3]=1). The Parameter Sector Erase commands set all the bits of a parameter sector to 1 (all bytes are FFh). Before the P4E or 4P4E command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The instruction 20h [CR2V[7]=0] is followed by a 3-byte address (A23-A0), or 20h [CR2V[7]=1] is followed by a 4-byte address (A31-A0), or 21h is followed by a 4-byte address (A31-A0) CS# must be driven into the logic high state after the twenty-fourth or thirty-second bit of the address has been latched in on SI/IO0. This will initiate the beginning of internal erase cycle, which involves the pre-programming and erase of the chosen sector of the flash memory array. If CS# is not driven high after the last bit of address, the sector erase operation will not be executed. As soon as CS# is driven high, the internal erase cycle will be initiated. With the internal erase cycle in progress, the user can read the value of the Write-In Progress (WIP) bit to determine when the operation has been completed. The WIP bit will indicate a "1". when the erase cycle is in progress and a "0" when the erase cycle has been completed. A P4E or 4P4E command applied to a sector that has been write protected through the Block Protection bits or ASP, will not be executed and will set the E_ERR status. A P4E command applied to a sector that is larger than 4KB will not be executed and will not set the E_ERR status. Figure 11.47 Parameter Sector Erase (P4E 20h or 4P4E 21h) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1-IO3 Phase Instruction Address Note: 1. A = MSB of address = A23 for SE 20h with CR2V[7]=0, or A31 for SE 20h with CR2V[7]=1 or for 4SE 21h Document Number: 002-03631 Rev. *C Page 106 of 147 PRELIMINARY S25FS064S This command is also supported in QPI mode. In QPI mode the instruction and address is shifted in on IO0-IO3. Figure 11.48 Parameter Sector Erase (P4E 20h or 4P4E 21h) QPI Mode Command Sequence CS# SCLK IO0 4 0 A-3 4 0 IO1 5 1 A-2 5 1 IO2 6 2 A-1 6 2 IO3 7 3 A 7 3 Phase Instructtion Address Note: 1. A = MSB of address = A23 for SE 20h with CR2V[7]=0, or A31 for SE 20h with CR2V[7]=1 or for 4SE 21h 11.6.2 Sector Erase (SE D8h or 4SE DCh) The Sector Erase (SE) command sets all bits in the addressed sector to 1 (all bytes are FFh). Before the Sector Erase (SE) command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The instruction D8h [CR2V[7]=0] is followed by a 3-byte address (A23-A0), or D8h [CR2V[7]=1] is followed by a 4-byte address (A31-A0), or DCh is followed by a 4-byte address (A31-A0) CS# must be driven into the logic high state after the twenty-fourth or thirty-second bit of address has been latched in on SI. This will initiate the erase cycle, which involves the pre-programming and erase of the chosen sector. If CS# is not driven high after the last bit of address, the sector erase operation will not be executed. As soon as CS# is driven into the logic high state, the internal erase cycle will be initiated. With the internal erase cycle in progress, the user can read the value of the Write-In Progress (WIP) bit to check if the operation has been completed. The WIP bit will indicate a "1" when the erase cycle is in progress and a "0" when the erase cycle has been completed. A Sector Erase (SE) command applied to a sector that has been Write Protected through the Block Protection bits or ASP, will not be executed and will set the E_ERR status. A device configuration option (CR3V[1]) determines whether the SE command erases 64KB or 256KB. A device configuration option (CR3V[3]) determines whether 4 KB parameter sectors are in use. When CR3V[3] = 0, parameter sectors overlay a portion of the highest or lowest address 32 KB of the device address space. If a sector erase command is applied to a 64KB sector that is overlaid by parameter sectors, the overlaid parameter sectors are not affected by the erase. Only the visible (non-overlaid) portion of the 64KB sector appears erased. Similarly if a sector erase command is applied to a 256 KB range that is overlaid by sectors, the overlaid parameter sectors are not affected by the erase. When CR3V[3] = 1, there are no parameter sectors in the device address space and the Sector Erase command always operates on fully visible 64 KB or 256KB sectors. ASP has a PPB and a DYB protection bit for each physical sector, including any parameter sectors. If a sector erase command is applied to a 256KB range that includes a 64 KB protected physical sector, the erase will not be executed on the 256KB range and will set the E_ERR status. Figure 11.49 Sector Erase (SE D8h or 4SE DCh) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1-IO3 Phase Instruction Address Note: 1. A = MSB of address = A23 for SE D8h with CR2V[7]=0, or A31 for SE D8h with CR2V[7]=1 or 4SE DCh Document Number: 002-03631 Rev. *C Page 107 of 147 PRELIMINARY S25FS064S This command is also supported in QPI mode. In QPI mode the instruction and address is shifted in on IO0-IO3. Figure 11.50 Sector Erase (SE D8h or 4SE DCh) QPI Mode Command Sequence CS# SCLK IO0 4 0 A-3 4 0 IO1 5 1 A-2 5 1 IO2 6 2 A-1 6 2 IO3 7 3 A 7 3 Phase Instructtion Address Note: 1. A = MSB of address = A23 for SE D8h with CR2V[7]=0, or A31 for SE D8h with CR2V[7]=1 or 4SE DCh 11.6.3 Bulk Erase (BE 60h or C7h): The Bulk Erase (BE) command sets all bits to 1 (all bytes are FFh) inside the entire flash memory array. Before the BE command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. CS# must be driven into the logic high state after the eighth bit of the instruction byte has been latched in on SI/IO0. This will initiate the erase cycle, which involves the pre-programming and erase of the entire flash memory array. If CS# is not driven high after the last bit of instruction, the BE operation will not be executed. As soon as CS# is driven into the logic high state, the erase cycle will be initiated. With the erase cycle in progress, the user can read the value of the Write-In Progress (WIP) bit to determine when the operation has been completed. The WIP bit will indicate a "1" when the erase cycle is in progress and a "0" when the erase cycle has been completed. A BE command can be executed only when the Block Protection (BP2, BP1, BP0) bits are set to "0" s. If the BP bits are not zero, the BE command is not executed and E_ERR is not set. The BE command will skip any sectors protected by the DYB or PPB and the E_ERR status will not be set. Figure 11.51 Bulk Erase Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction This command is also supported in QPI mode. In QPI mode the instruction is shifted in on IO0-IO3. Figure 11.52 Bulk Erase Command Sequence QPI Mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 3 Phase Document Number: 002-03631 Rev. *C Instruction Page 108 of 147 PRELIMINARY S25FS064S 11.6.4 Evaluate Erase Status (EES D0h) The Evaluate Erase Status (EES) command verifies that the last erase operation on the addressed sector was completed successfully. If the selected sector was successfully erased the erase status bit (SR2V[2]) is set to 1. If the selected sector was not completely erased SR2V[2] is 0. The EES command can be used to detect erase operations failed due to loss of power, reset, or failure during the erase operation. The EES instruction is followed by a 3 or 4 byte address, depending on the address length configuration (CR2V[7]). The EES command requires tEES to complete and update the erase status in SR2V. The WIP bit (SR1V[0]) may be read using the RDSR1 (05h) command, to determine when the EES command is finished. Then the RDSR2 (07h) or the RDAR (65h) command can be used to read SR2V[2]. If a sector is found not erased with SR2V[2]=0, the sector must be erased again to ensure reliable storage of data in the sector. The Write Enable command (to set the WEL bit) is not required before the EES command. However, the WEL bit is set by the device itself and cleared at the end of the operation, as visible in SR1V[1] when reading status. Figure 11.53 EES Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1-IO3 Phase Instruction Address Note: 1. A = MSB of address = A23 for ESS D0h with CR2V[7]=0, or A31 for ESS D0h with CR2V[7]=1 This command is also supported in QPI mode. In QPI mode the instruction and address is shifted in on IO0-IO3. Figure 11.54 EES QPI Mode Command Sequence CS# SCLK IO0 4 0 A-3 4 0 IO1 5 1 A-2 5 1 IO2 6 2 A-1 6 2 IO3 7 3 A 7 3 Phase Instructtion Address Note: 1. A = MSB of address = A23 for ESS D0h with CR2V[7]=0, or A31 for ESS D0h with CR2V[7]=1 11.6.5 Erase or Program Suspend (EPS 85h, 75h, B0h) There are three instruction codes for Program or Erase Suspend (EPS) to enable legacy and alternate source software compatibility. The EPS command allows the system to interrupt a programming or erase operation and then read from any other non-erasesuspended sector or non-program-suspended-page. Program or Erase Suspend is valid only during a programming or sector erase operation. A Bulk Erase operation cannot be suspended. The Write in Progress (WIP) bit in Status Register 1 (SR1V[0]) must be checked to know when the programming or erase operation has stopped. The Program Suspend Status bit in the Status Register-2 (SR2[0]) can be used to determine if a programming operation has been suspended or was completed at the time WIP changes to 0. The Erase Suspend Status bit in the Status Register-2 (SR2[1]) can be used to determine if an erase operation has been suspended or was completed at the time WIP changes to 0. The time required for the suspend operation to complete is tSL, see Table 7.2, Program or Erase Suspend AC Parameters on page 38. Document Number: 002-03631 Rev. *C Page 109 of 147 PRELIMINARY S25FS064S An Erase can be suspended to allow a program operation or a read operation. During an erase suspend, the DYB array may be read to examine sector protection and written to remove or restore protection on a sector to be programmed. A program operation may be suspended to allow a read operation. A new erase operation is not allowed with an already suspended erase or program operation. An erase command is ignored in this situation. Table 11.5 Commands Allowed During Program or Erase Suspend Instruction Name Instruction Code (Hex) Allowed During Erase Suspend Allowed During Program Suspend Comment READ 03 X X All array reads allowed in suspend RDSR1 05 X X Needed to read WIP to determine end of suspend process RDAR 65 X X Alternate way to read WIP to determine end of suspend process Needed to read suspend status to determine whether the operation is suspended or complete. WREN 06 X RDSR2 07 X X Required for program command within erase suspend. RUID 4C X X Read Unique ID is allowed in suspend PP 02 X Required for array program during erase suspend. Only allowed if there is no other program suspended program operation (SR2V[0]=0). A program command will be ignored while there is a suspended program. If a program command is sent for a location within an erase suspended sector the program operation will fail with the P_ERR bit set. 4PP 12 X Required for array program during erase suspend. Only allowed if there is no other program suspended program operation (SR2V[0]=0). A program command will be ignored while there is a suspended program. If a program command is sent for a location within an erase suspended sector the program operation will fail with the P_ERR bit set. QPP 32 X Required for array program during erase suspend. Only allowed if there is no other program suspended program operation (SR2V[0]=0). A program command will be ignored while there is a suspended program. If a program command is sent for a location within an erase suspended sector the program operation will fail with the P_ERR bit set. 4QPP 34 X Required for array program during erase suspend. Only allowed if there is no other program suspended program operation (SR2V[0]=0). A program command will be ignored while there is a suspended program. If a program command is sent for a location within an erase suspended sector the program operation will fail with the P_ERR bit set. 4READ 13 X CLSR 30 X CLSR 82 X Clear status may be used if a program operation fails during erase suspend. X All array reads allowed in suspend Clear status may be used if a program operation fails during erase suspend. Note the instruction is only valid if enabled for clear status by CR4NV[2=1] EPR 30 X X Required to resume from erase or program suspend. Note the command must be enabled for use as a resume command by CR3NV[2]=1 EPR 7A X X Required to resume from erase or program suspend. EPR 8A X X Required to resume from erase or program suspend. RSTEN 66 X X Reset allowed anytime RST 99 X X Reset allowed anytime FAST_READ 0B X X All array reads allowed in suspend 4FAST_READ 0C X X All array reads allowed in suspend DOR 3B X X All array reads allowed in suspend 4DOR 3C X X All array reads allowed in suspend Read Quad Output (3 or 4 Byte Address) QOR 6B X X 4QOR 6C X X EPR 7A X Required to resume from erase suspend. EPR 8A X Required to resume from erase suspend. DIOR BB X X 4DIOR BC X X DYBRD FA X Document Number: 002-03631 Rev. *C Read Quad Output (4 Byte Address) All array reads allowed in suspend All array reads allowed in suspend It may be necessary to remove and restore dynamic protection during erase suspend to allow programming during erase suspend. Page 110 of 147 PRELIMINARY S25FS064S Table 11.5 Commands Allowed During Program or Erase Suspend (Continued) Allowed During Program Suspend Instruction Name Instruction Code (Hex) Allowed During Erase Suspend DYBWR FB X It may be necessary to remove and restore dynamic protection during erase suspend to allow programming during erase suspend. PPBRD FC X Allowed for checking persistent protection before attempting a program command during erase suspend. 4DYBRD E0 X It may be necessary to remove and restore dynamic protection during erase suspend to allow programming during erase suspend. 4DYBWR E1 X It may be necessary to remove and restore dynamic protection during erase suspend to allow programming during erase suspend. 4PPBRD E2 X Allowed for checking persistent protection before attempting a program command during erase suspend. QIOR EB X X All array reads allowed in suspend All array reads allowed in suspend Comment 4QIOR EC X X DDRQIOR ED X X All array reads allowed in suspend 4DDRQIOR EE X X All array reads allowed in suspend RESET F0 X X Reset allowed anytime MBR FF X X May need to reset a read operation during suspend Reading at any address within an erase-suspended sector or program-suspended page produces undetermined data. The WRR, WRAR, or PPB Erase commands are not allowed during Erase or Program Suspend, it is therefore not possible to alter the Block Protection or PPB bits during Erase Suspend. If there are sectors that may need programming during Erase suspend, these sectors should be protected only by DYB bits that can be turned off during Erase Suspend. After an erase-suspended program operation is complete, the device returns to the erase-suspend mode. The system can determine the status of the program operation by reading the WIP bit in the Status Register, just as in the standard program operation. Figure 11.55 Program or Erase Suspend Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction This command is also supported in QPI mode. In QPI mode the instruction is shifted in on IO0-IO3. Figure 11.56 Program or Erase Suspend Command Sequence QPI mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 Phase Document Number: 002-03631 Rev. *C 3 Instruction Page 111 of 147 PRELIMINARY S25FS064S Figure 11.57 Program or Erase Suspend Command with Continuing Instruction Commands Sequence tSL CS# SCK SI_IO0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 SO_IO1 7 6 7 6 5 4 3 2 1 5 4 3 2 1 0 0 IO2-IO3 Phase Suspend Instruction Read Status Instruction Phase Status Instr. During Suspend Repeat Status Read Until Suspended 11.6.6 Erase or Program Resume (EPR 7Ah, 8Ah, 30h) An Erase or Program Resume command must be written to resume a suspended operation. There are three instruction codes for Erase or Program Resume (EPR) to enable legacy and alternate source software compatibility. After program or read operations are completed during a program or erase suspend the Erase or Program Resume command is sent to continue the suspended operation. After an Erase or Program Resume command is issued, the WIP bit in the Status Register-1 will be set to a 1 and the programming operation will resume if one is suspended. If no program operation is suspended the suspended erase operation will resume. If there is no suspended program or erase operation the resume command is ignored. Program or erase operations may be interrupted as often as necessary e.g. a program suspend command could immediately follow a program resume command but, in order for a program or erase operation to progress to completion there must be some periods of time between resume and the next suspend command greater than or equal to tRS. See Table 7.2, Program or Erase Suspend AC Parameters on page 38. Figure 11.58 Erase or Program Resume command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction This command is also supported in QPI mode. In QPI mode the instruction is shifted in on IO0-IO3. Figure 11.59 Erase or Program Resume command Sequence QPI mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 3 Phase Document Number: 002-03631 Rev. *C Instruction Page 112 of 147 PRELIMINARY 11.7 S25FS064S One Time Program Array Commands 11.7.1 OTP Program (OTPP 42h) The OTP Program command programs data in the One Time Program region, which is in a different address space from the main array data. The OTP region is 1024 bytes so, the address bits from A31 to A10 must be zero for this command. Refer to Section 9.5, OTP Address Space on page 47 for details on the OTP region. Before the OTP Program command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The WIP bit in SR1V may be checked to determine when the operation is completed. The P_ERR bit in SR1V may be checked to determine if any error occurred during the operation. To program the OTP array in bit granularity, the rest of the bits within a data byte can be set to "1". Each region in the OTP memory space can be programmed one or more times, provided that the region is not locked. Attempting to program zeros in a region that is locked will fail with the P_ERR bit in SR1V set to "1". Programming ones, even in a protected area does not cause an error and does not set P_ERR. Subsequent OTP programming can be performed only on the un-programmed bits (that is, "1" data). Programming more than once within an ECC unit will disable ECC on that unit. The protocol of the OTP Program command is the same as the Page Program command. See Section 11.5.2, Page Program (PP 02h or 4PP 12h) on page 104 for the command sequence. 11.7.2 OTP Read (OTPR 4Bh) The OTP Read command reads data from the OTP region. The OTP region is 1024 bytes so, the address bits from A31 to A10 must be zero for this command. Refer to Section 9.5, OTP Address Space on page 47 for details on the OTP region. The protocol of the OTP Read command is similar to the Fast Read command except that it will not wrap to the starting address after the OTP address is at its maximum; instead, the data beyond the maximum OTP address will be undefined. The OTP Read command read latency is set by the latency value in CR2V[3:0]. See Section 11.4.2, Fast Read (FAST_READ 0Bh or 4FAST_READ 0Ch) on page 96 for the command sequence. 11.8 Advanced Sector Protection Commands 11.8.1 ASP Read (ASPRD 2Bh) The ASP Read instruction 2Bh is shifted into SI by the rising edge of the SCK signal. Then the 16-bit ASP register contents are shifted out on the serial output SO, least significant byte first. Each bit is shifted out at the SCK frequency by the falling edge of the SCK signal. It is possible to read the ASP register continuously by providing multiples of 16 clock cycles. The maximum operating clock frequency for the ASP Read (ASPRD) command is 133 MHz. Figure 11.60 ASPRD Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 IO2-IO3 Phase Instruction Document Number: 002-03631 Rev. *C DY Output IRP Low Byte Output IRP High Byte Page 113 of 147 PRELIMINARY S25FS064S 11.8.2 ASP Program (ASPP 2Fh) Before the ASP Program (ASPP) command can be accepted by the device, a Write Enable (WREN) command must be issued. After the Write Enable (WREN) command has been decoded, the device will set the Write Enable Latch (WEL) in the Status Register to enable any write operations. The ASPP command is entered by driving CS# to the logic low state, followed by the instruction and two data bytes on SI, least significant byte first. The ASP Register is two data bytes in length. The ASPP command affects the P_ERR and WIP bits of the Status and Configuration Registers in the same manner as any other programming operation. CS# input must be driven to the logic high state after the sixteenth bit of data has been latched in. If not, the ASPP command is not executed. As soon as CS# is driven to the logic high state, the self-timed ASPP operation is initiated. While the ASPP operation is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a "1" during the self-timed ASPP operation, and is a "0" when it is completed. When the ASPP operation is completed, the Write Enable Latch (WEL) is set to a "0". Figure 11.61 ASPP Command CS# SCK SI_IO0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction Input ASPR Low Byte Input ASPR High Byte 11.8.3 DYB Read (DYBRD FAh or 4DYBRD E0h) The instruction is latched into SI/IO0 by the rising edge of the SCK signal. The instruction is followed by the 24 or 32-Bit address, depending on the address length configuration CR2V[7], selecting location zero within the desired sector. Note, the high order address bits not used by a particular density device must be zero. Then the 8-bit DYB access register contents are shifted out on the serial output SO/IO1. Each bit is shifted out at the SCK frequency by the falling edge of the SCK signal. It is possible to read the same DYB access register continuously by providing multiples of eight clock cycles. The address of the DYB register does not increment so this is not a means to read the entire DYB array. Each location must be read with a separate DYB Read command. The maximum operating clock frequency for READ command is 133 MHz. Figure 11.62 DYBRD Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 IO2-IO3 Phase Instruction Address Register Repeat Register Notes: 1. A = MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7]=1 with command FAh. 2. A = MSB of address = 31 with command E0h In QPI mode the instruction is shifted in on IO0-IO3. Document Number: 002-03631 Rev. *C Page 114 of 147 PRELIMINARY S25FS064S Figure 11.63 DYBRD QPI Mode Command Sequence CS SCLK IO0 4 0 A-3 4 0 4 0 IO1 5 1 A-2 5 1 5 1 IO2 6 2 A-1 6 2 6 2 IO3 7 3 A 7 3 7 3 Phase Instruction Address Output DYBAR Notes: 1. A = MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7]=1 with command FAh. 2. A = MSB of address = 31 with command E0hDYBRD QPI Mode Command Sequence 11.8.4 DYB Write (DYBWR FBh or 4DYBWR E1h) Before the DYB Write (DYBWR) command can be accepted by the device, a Write Enable (WREN) command must be issued. After the Write Enable (WREN) command has been decoded, the device will set the Write Enable Latch (WEL) in the Status Register to enable any write operations. The DYBWR command is entered by driving CS# to the logic low state, followed by the instruction, followed by the 24 or 32-Bit address, depending on the address length configuration CR2V[7], selecting location zero within the desired sector (note, the high order address bits not used by a particular density device must be zero), then the data byte on SI/IO0. The DYB Access Register is one data byte in length. The data value must be 00h to protect or FFh to unprotect the selected sector. The DYBWR command affects the P_ERR and WIP bits of the Status and Configuration Registers in the same manner as any other programming operation. CS# must be driven to the logic high state after the eighth bit of data has been latched in. As soon as CS# is driven to the logic high state, the self-timed DYBWR operation is initiated. While the DYBWR operation is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a "1" during the self-timed DYBWR operation, and is a "0" when it is completed. When the DYBWR operation is completed, the Write Enable Latch (WEL) is set to a "0". Figure 11.64 DYB Write Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction Address Input Data 1 Input Data 2 Notes: 1. A= MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7]=1 with command FBh. 2. A = MSB of address = 31 with command E1h This command is also supported in QPI mode. In QPI mode the instruction, address and data is shifted in on IO0-IO3. Document Number: 002-03631 Rev. *C Page 115 of 147 PRELIMINARY S25FS064S Figure 11.65 DYB Write QPI Mode Command Sequence CS# SCLK IO0 4 0 A-3 4 0 4 0 4 0 4 0 4 0 IO1 5 1 A-2 5 1 5 1 5 1 5 1 5 1 IO2 6 2 A-1 6 2 6 2 6 2 6 2 6 2 IO3 7 3 A 7 3 7 3 7 3 7 3 7 3 Phase Instruct. Address Input D1 Input D2 Input D3 Input D4 Notes: 1. A= MSB of address = 23 for Address length (CR2V[7] = 0, or 31 for CR2V[7]=1 with command FBh. 2. A = MSB of address = 31 with command E1h 11.8.5 PPB Read (PPBRD FCh or 4PPBRD E2h) The instruction E2h is shifted into SI/IO0 by the rising edges of the SCK signal, followed by the 24 or 32-Bit address, depending on the address length configuration CR2V[7], selecting location zero within the desired sector (note, the high order address bits not used by a particular density device must be zero). Then the 8-bit PPB access register contents are shifted out on SO/IO1. It is possible to read the same PPB access register continuously by providing multiples of eight clock cycles. The address of the PPB register does not increment so this is not a means to read the entire PPB array. Each location must be read with a separate PPB Read command. The maximum operating clock frequency for the PPB Read command is 133 MHz. Figure 11.66 PPB Read Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 IO2-IO3 Phase Instruction Address Register Repeat Register Note 1. A = MSB of address = 23 for Address length (CR2V[0] = 0, or 31 for CR2V[0]=1 with command FCh. 2. A = MSB of address = 31 with command E2h 11.8.6 PPB Program (PPBP FDh or 4PPBP E3h) Before the PPB Program (PPBP) command can be accepted by the device, a Write Enable (WREN) command must be issued. After the Write Enable (WREN) command has been decoded, the device will set the Write Enable Latch (WEL) in the Status Register to enable any write operations. The PPBP command is entered by driving CS# to the logic low state, followed by the instruction, followed by the 24 or 32-Bit address, depending on the address length configuration CR2V[7], selecting location zero within the desired sector (note, the high order address bits not used by a particular density device must be zero). The PPBP command affects the P_ERR and WIP bits of the Status and Configuration Registers in the same manner as any other programming operation. CS# must be driven to the logic high state after the last bit of address has been latched in. If not, the PPBP command is not executed. As soon as CS# is driven to the logic high state, the self-timed PPBP operation is initiated. While the PPBP operation is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a "1" during the self-timed PPBP operation, and is a "0" when it is completed. When the PPBP operation is completed, the Write Enable Latch (WEL) is set to a "0". Document Number: 002-03631 Rev. *C Page 116 of 147 PRELIMINARY S25FS064S Figure 11.67 PPB Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1-IO3 Phase Instruction Address Notes: 1. A = MSB of address = 23 for Address length (CR2V[0] = 0, or 31 for CR2V[0]=1 with command FDh. 2. A = MSB of address = 31 with command E3h 11.8.7 PPB Erase (PPBE E4h) The PPB Erase (PPBE) command sets all PPB bits to 1. Before the PPB Erase command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The instruction E4h is shifted into SI/IO0 by the rising edges of the SCK signal. CS# must be driven into the logic high state after the eighth bit of the instruction byte has been latched in on SI/IO0. This will initiate the beginning of internal erase cycle, which involves the pre-programming and erase of the entire PPB memory array. Without CS# being driven to the logic high state after the eighth bit of the instruction, the PPB erase operation will not be executed. With the internal erase cycle in progress, the user can read the value of the Write-In Progress (WIP) bit to check if the operation has been completed. The WIP bit will indicate a "1" when the erase cycle is in progress and a "0" when the erase cycle has been completed. Erase suspend is not allowed during PPB Erase. Figure 11.68 PPB Erase Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction 11.8.8 PPB Lock Bit Read (PLBRD A7h) The PPB Lock Bit Read (PLBRD) command allows the PPB Lock Register contents to be read out of SO/IO1. It is possible to read the PPB lock register continuously by providing multiples of eight clock cycles. The PPB Lock Register contents may only be read when the device is in standby state with no other operation in progress. It is recommended to check the Write-In Progress (WIP) bit of the Status Register before issuing a new command to the device. Figure 11.69 PPB Lock Register Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 SO_IO1 Phase 1 0 7 Instruction Document Number: 002-03631 Rev. *C 6 5 4 3 2 Register Read 1 0 7 6 5 4 3 2 1 0 Repeat Register Read Page 117 of 147 PRELIMINARY S25FS064S 11.8.9 PPB Lock Bit Write (PLBWR A6h) The PPB Lock Bit Write (PLBWR) command clears the PPB Lock Register to zero. Before the PLBWR command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The PLBWR command is entered by driving CS# to the logic low state, followed by the instruction. CS# must be driven to the logic high state after the eighth bit of instruction has been latched in. If not, the PLBWR command is not executed. As soon as CS# is driven to the logic high state, the self-timed PLBWR operation is initiated. While the PLBWR operation is in progress, the Status Register may still be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a "1" during the self-timed PLBWR operation, and is a "0" when it is completed. When the PLBWR operation is completed, the Write Enable Latch (WEL) is set to a "0". The maximum clock frequency for the PLBWR command is 133 MHz. Figure 11.70 PPB Lock Bit Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction 11.8.10 Password Read (PASSRD E7h) The correct password value may be read only after it is programmed and before the Password Mode has been selected by programming the Password Protection Mode bit to 0 in the ASP Register (ASP[2]). After the Password Protection Mode is selected the password is no longer readable, the PASSRD command will output undefined data. The PASSRD command is shifted into SI/IO0. Then the 64-bit Password is shifted out on the serial output SO/IO1, least significant byte first, most significant bit of each byte first. Each bit is shifted out at the SCK frequency by the falling edge of the SCK signal. It is possible to read the Password continuously by providing multiples of 64 clock cycles. The maximum operating clock frequency for the PASSRD command is 133 MHz. Figure 11.71 Password Read (PASSRD) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 IO2-IO3 Phase Instruction DY Data 1 Data 8 11.8.11 Password Program (PASSP E8h) Before the Password Program (PASSP) command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device. After the Write Enable (WREN) command has been decoded, the device sets the Write Enable Latch (WEL) to enable the PASSP operation. The password can only be programmed before the Password Mode is selected by programming the Password Protection Mode bit to 0 in the ASP Register (ASP[2]). After the Password Protection Mode is selected the PASSP command is ignored. The PASSP command is entered by driving CS# to the logic low state, followed by the instruction and the password data bytes on SI/IO0, least significant byte first, most significant bit of each byte first. The password is sixty-four (64) bits in length. Document Number: 002-03631 Rev. *C Page 118 of 147 PRELIMINARY S25FS064S CS# must be driven to the logic high state after the sixty-fourth (64th) bit of data has been latched. If not, the PASSP command is not executed. As soon as CS# is driven to the logic high state, the self-timed PASSP operation is initiated. While the PASSP operation is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a "1" during the self-timed PASSP cycle, and is a "0" when it is completed. The PASSP command can report a program error in the P_ERR bit of the status register. When the PASSP operation is completed, the Write Enable Latch (WEL) is set to a "0". The maximum clock frequency for the PASSP command is 133 MHz. Figure 11.72 Password Program (PASSP) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction Password Byte 1 Password Byte 8 11.8.12 Password Unlock (PASSU E9h) The PASSU command is entered by driving CS# to the logic low state, followed by the instruction and the password data bytes on SI/IO0, least significant byte first, most significant bit of each byte first. The password is sixty-four (64) bits in length. CS# must be driven to the logic high state after the sixty-fourth (64th) bit of data has been latched. If not, the PASSU command is not executed. As soon as CS# is driven to the logic high state, the self-timed PASSU operation is initiated. While the PASSU operation is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a "1" during the self-timed PASSU cycle, and is a "0" when it is completed. If the PASSU command supplied password does not match the hidden password in the Password Register, an error is reported by setting the P_ERR bit to 1. The WIP bit of the status register also remains set to 1. It is necessary to use the CLSR command to clear the status register, the RESET command to software reset the device, or drive the RESET# input low to initiate a hardware reset, in order to return the P_ERR and WIP bits to 0. This returns the device to standby state, ready for new commands such as a retry of the PASSU command. If the password does match, the PPB Lock bit is set to "1". The maximum clock frequency for the PASSU command is 133 MHz. Figure 11.73 Password Unlock (PASSU) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction Document Number: 002-03631 Rev. *C Password Byte 1 Password Byte 8 Page 119 of 147 PRELIMINARY 11.9 S25FS064S Reset Commands Software controlled Reset commands restore the device to its initial power up state, by reloading volatile registers from non-volatile default values. However, the volatile FREEZE bit in the Configuration register CR1V[0] and the volatile PPB Lock bit in the PPB Lock Register are not changed by a software reset. The software reset cannot be used to circumvent the FREEZE or PPB Lock bit protection mechanisms for the other security configuration bits. The Freeze bit and the PPB Lock bit will remain set at their last value prior to the software reset. To clear the FREEZE bit and set the PPB Lock bit to its protection mode selected power on state, a full power-on-reset sequence or hardware reset must be done. The non-volatile bits in the configuration register (CR1NV), TBPROT_O, TBPARM, and BPNV_O, retain their previous state after a Software Reset. The Block Protection bits BP2, BP1, and BP0, in the status register (SR1V) will only be reset to their default value if FREEZE = 0. A reset command (RST or RESET) is executed when CS# is brought high at the end of the instruction and requires tRPH time to execute. In the case of a previous Power-up Reset (POR) failure to complete, a reset command triggers a full power up sequence requiring tPU to complete. Figure 11.74 Software / Mode Bit Reset Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction This command is also supported in QPI mode. In QPI mode the instruction is shifted in on IO0-IO3. Figure 11.75 Software Reset / Mode Bit Command Sequence - QPI Mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 Phase 3 Instruction 11.9.1 Software Reset Enable (RSTEN 66h) The Reset Enable (RSTEN) command is required immediately before a Reset command (RST) such that a software reset is a sequence of the two commands. Any command other than RST following the RSTEN command, will clear the reset enable condition and prevent a later RST command from being recognized. 11.9.2 Software Reset (RST 99h) The Reset (RST) command immediately following a RSTEN command, initiates the software reset process. 11.9.3 Legacy Software Reset (RESET F0h) The Legacy Software Reset (RESET) is a single command that initiates the software reset process. This command is disabled by default but can be enabled by programming CR3V[0]=1, for software compatibility with Cypress legacy FL-S devices. Document Number: 002-03631 Rev. *C Page 120 of 147 PRELIMINARY S25FS064S 11.9.4 Mode Bit Reset (MBR FFh) The Mode Bit Reset (MBR) command is used to return the device from continuous high performance read mode back to normal standby awaiting any new command. Because some device packages lack a hardware RESET# input and a device that is in a continuous high performance read mode may not recognize any normal SPI command, a system hardware reset or software reset command may not be recognized by the device. It is recommended to use the MBR command after a system reset when the RESET# signal is not available or, before sending a software reset, to ensure the device is released from continuous high performance read mode. The MBR command sends Ones on SI/IO0 8 SCK cycles. IO1-IO3 are "don't care" during these cycles. This command is also supported in QPI mode. In QPI mode the instruction is shifted in on IO0-IO3 , two clock cycles per byte. 11.10 DPD Commands 11.10.1 Enter Deep Power Down (DPD B9h) Although the standby current during normal operation is relatively low, standby current can be further reduced with the Deep Power Down command. The lower power consumption makes the Deep Power Down (DPD) command especially useful for battery powered applications (see IDPD in Section 5.6, DC Characteristics on page 25). The DPD command is accepted only while the device is not performing an embedded algorithm as indicated by the Status Register1 volatile Write In Progress (WIP) bit being cleared to zero (SR1V[0] = 0). The command is initiated by driving the CS# pin low and shifting the instruction code "B9h" as shown in Figure 11.76, Deep Power Down (DPD) Command Sequence on page 121. The CS# pin must be driven high after the eighth bit has been latched. If this is not done the Deep Power-down command will not be executed. After CS# is driven high, the power-down state will be entered within the time duration of tDPD (Section 6., Timing Specifications on page 28). While in the power-down state only the Release from Deep Power-down command, which restores the device to normal operation, will be recognized. All other commands are ignored. This includes the Read Status Register command, which is always available during normal operation. Ignoring all but one command also makes the Power Down state useful for write protection. The device always powers-up in the interface standby state with the standby current of ICC1. Figure 11.76 Deep Power Down (DPD) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction This command is also supported in QPI mode. In QPI mode the instruction is shifted in on IO0-IO3. Figure 11.77 Deep Power Down (DPD) Command Sequence - QPI Mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 3 Phase Document Number: 002-03631 Rev. *C Instruction Page 121 of 147 PRELIMINARY S25FS064S 11.10.2 Release from Deep Power Down (RES ABh) The Release from Deep Power-down command is used to release the device from the deep power-down state. In some legacy SPI devices the RES command could also be used to obtain the device electronic identification (ID) number. However, the device ID function is not supported by the RES command. To release the device from the deep power-down state, the command is issued by driving the CS# pin low, shifting the instruction code "ABh" and driving CS# high as shown in Figure 11.78, Release from Deep Power Down (RES) Command Sequence on page 122. Release from deep power-down will take the time duration of tRES (Section 6., Timing Specifications on page 28) before the device will resume normal operation and other commands are accepted. The CS# pin must remain high during the tRES time duration. Hardware Reset will also release the device from the DPD state as part of the hardware reset process. Figure 11.78 Release from Deep Power Down (RES) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction This command is also supported in QPI mode. In QPI mode the instruction is shifted in on IO0-IO3. Figure 11.79 Release from Deep Power Down (RES) Command Sequence - QPI Mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 Phase Document Number: 002-03631 Rev. *C 3 Instruction Page 122 of 147 PRELIMINARY S25FS064S 12. Data Integrity 12.1 Endurance 12.1.1 Erase Endurance Table 12.1 Erase Endurance Industrial and Industrial Plus Temperature Minimum Unit Program/Erase cycles per main Flash array sectors (1) Parameter 100K PE cycle Program/Erase cycles per PPB array or non-volatile register array (2) 100K PE cycle Note: 1. For Industrial Plus 100% of the memory array with ECC enabled. 2. Each write command to a non-volatile register causes a PE cycle on the entire non-volatile register array. OTP bits and registers internally reside in a separate array that is not cycled. . Table 12.2 Erase Endurance Extended Temperature Minimum Unit Program/Erase cycles per main Flash array sector (1) Parameter 10K PE cycle Program/Erase cycles per PPB array or non-volatile register array (2) 10K PE cycle Notes: 1. 100% of the memory array with ECC enabled. 2. Each write command to a non-volatile register causes a PE cycle on the entire non-volatile register array. OTP bits and registers internally reside in a separate array that is not cycled. 12.2 Data Retention Table 12.3 Data Retention Industrial and Industrial Plus Temperature Parameter Data Retention Time (1) Minimum Time Unit 1K Program/Erase Cycles @ 55C Test Conditions 20 Years 10K Program/Erase Cycles @ 55C 2 Years 100K Program/Erase Cycles @ 55C 0.2 Years Minimum Time Unit 1K Program/Erase Cycles @ 55C 20 Years 10K Program/Erase Cycles @ 55C 2 Years Note: 1. For Industrial Plus 100% of the memory array with ECC enabled. Table 12.4 Data Retention Extended Temperature Parameter Data Retention Time (1) Test Conditions Note: 1. 100% of the memory array with ECC enabled. Document Number: 002-03631 Rev. *C Page 123 of 147 PRELIMINARY S25FS064S 13. Software Interface Reference 13.1 OTP Memory Space Address Map The SFDP address space has a header starting at address zero that identifies the SFDP data structure and provides a pointer to each parameter. One parameter is mandated by the JEDEC JESD216 Rev B standard. Cypress provides an additional parameter by pointing to the ID-CFI address space i.e. the ID-CFI address space is a sub-set of the SFDP address space. The JEDEC parameter is located within the ID-CFI address space and is thus both a CFI parameter and an SFDP parameter. In this way both SFDP and ID-CFI information can be accessed by either the RSFDP or RDID commands. Table 13.1 SFDP Overview Map Byte Address 0000h Location zero within JEDEC JESD216B SFDP space - start of SFDP header ,,, Remainder of SFDP header followed by undefined space 1000h Location zero within ID-CFI space - start of ID-CFI parameter tables ... ID-CFI parameters Start of SFDP parameter tables which are also grouped as one of the CFI parameter tables (the CFI parameter itself starts at 108Eh, the SFDP parameter table data is double word aligned starting at 1090h) 1090h ... 13.2 Description Remainder of SFDP parameter tables followed by either more CFI parameters or undefined space Device ID and Common Flash Interface (ID-CFI) Address Map -- Standard 13.2.1 Field Definitions Table 13.2 Manufacturer and Device ID Byte Address Data 00h 01h 01h 02h 02h 17h (64Mb) Description Manufacturer ID for Cypress Device ID Most Significant Byte - Memory Interface Type Device ID Least Significant Byte - Density 03h 4Dh ID-CFI Length - number bytes following. Adding this value to the current location of 03h gives the address of the last valid location in the ID-CFI legacy address map. The legacy CFI address map ends with the Primary Vendor-Specific Extended Query. The original legacy length is maintained for backward software compatibility. However, the CFI Query Identification String also includes a pointer to the Alternate Vendor-Specific Extended Query that contains additional information related to the FS-S family. 04h 00h (Uniform 256KB physical sectors) 01h (Uniform 64KB physical sectors) Physical Sector Architecture The FS-S Family may be configured with or without 4KB parameter sectors in addition to the uniform sectors. 05h 81h (FS-S Family) 06h xxh 07h xxh ASCII characters for Model Refer to Ordering Part Number on page 143 for the model number definitions. 08h xxh Reserved 09h xxh Reserved 0Ah xxh Reserved 0Bh xxh Reserved 0Ch xxh Reserved 0Dh xxh Reserved 0Eh xxh Reserved 0Fh xxh Reserved Document Number: 002-03631 Rev. *C Family ID Page 124 of 147 PRELIMINARY S25FS064S Table 13.3 CFI Query Identification String Byte Address Data 10h 11h 12h 51h 52h 59h Description Query Unique ASCII string "QRY" 13h 14h 02h 00h Primary OEM Command Set FL-P backward compatible command set ID 15h 16h 40h 00h Address for Primary Extended Table 17h 18h 53h 46h Alternate OEM Command Set Ascii characters "FS" for SPI (F) interface, S Technology 19h 1Ah 51h 00h Address for Alternate OEM Extended Table Table 13.4 CFI System Interface String Byte Address Data 1Bh 17h VDD Min. (erase/program): 100 millivolts BCD) Description 1Ch 19h VDD Max. (erase/program): 100 millivolts BCD) 1Dh 00h VPP Min. voltage (00h = no VPP present) 1Eh 00h VPP Max. voltage (00h = no VPP present) 1Fh 09h Typical timeout per single byte program 2N s 20h 09h Typical timeout for Min. size Page program 2N s (00h = not supported) 21h 08h (4KB or 64KB) Typical timeout per individual sector erase 2N ms 22h 05h (64 Mb) 23h 02h Max. timeout for byte program 2N times typical 24h 02h Max. timeout for page program 2N times typical 25h 03h Max. timeout per individual sector erase 2N times typical 26h 02h Max. timeout for full chip erase 2N times typical (00h = not supported) Typical timeout for full chip erase 2N ms (00h = not supported) Table 13.5 Device Geometry Definition for Bottom Boot Initial Delivery State Byte Address Data 27h 17h (64 Mb) 28h 02h 29h 01h 2Ah 08h 2Bh 00h 2Ch 03h 2Dh 07h 2Eh 00h 2Fh 10h 30h 00h Document Number: 002-03631 Rev. *C Description N Device Size = 2 bytes; Flash Device Interface Description; 0000h = x8 only 0001h = x16 only 0002h = x8/x16 capable 0003h = x32 only 0004h = Single I/O SPI, 3-byte address 0005h = Multi I/O SPI, 3-byte address 0102h = Multi I/O SPI, 3 or 4 byte address Max. number of bytes in multi-byte write = 2N 0000h = not supported 0008h = 256B page 0009h = 512B page Number of Erase Block Regions within device 1 = Uniform Device, >1 = Boot Device Erase Block Region 1 Information (refer to JEDEC JEP137) 8 sectors = 8-1 = 0007h 4 KB sectors = 256 Bytes x 0010h Page 125 of 147 PRELIMINARY S25FS064S Table 13.5 Device Geometry Definition for Bottom Boot Initial Delivery State (Continued) Byte Address Data 31h 00h 32h 00h 33h 80h Description Erase Block Region 2 Information (refer to JEDEC JEP137) 1 sectors = 1-1 = 0000h 32 KB sector = 256 Bytes x 0080h 34h 00h 35h 7Eh (64Mb) 36h 00h 37h 00h 38h 00h 39h thru 3Fh FFh Erase Block Region 3 Information 127 sectors = 127-1 = 007Eh (64 Mb) RFU Note: 1. FS-S MD devices are user configurable to have either a hybrid sector architecture (with eight 4KB sectors and all remaining sectors are uniform 64KB or 256KB) or a uniform sector architecture with all sectors uniform 64KB or 256KB. FS-S devices are also user configurable to have the 4KB parameter sectors at the top of memory address space. The CFI geometry information of the above table is relevant only to the initial delivery state. All devices are initially shipped from Cypress with the hybrid sector architecture with the 4KB sectors located at the bottom of the array address map. However, the device configuration TBPARM bit CR1NV[2] may be programed to invert the sector map to place the 4KB sectors at the top of the array address map. The 20h_NV bit (CR3NV[3} may be programmed to remove the 4KB sectors from the address map. The Flash device driver software must examine the TBPARM and 20h_NV bits to determine if the sector map was inverted or hybrid sectors removed at a later time. Table 13.6 CFI Primary Vendor-Specific Extended Query Byte Address Data 40h 50h 41h 52h 42h 49h Description Query-unique ASCII string "PRI" 43h 31h Major version number = 1, ASCII 44h 33h Minor version number = 3, ASCII 45h 21h Address Sensitive Unlock (Bits 1-0) 00b = Required, 01b = Not Required Process Technology (Bits 5-2) 0000b = 0.23 m Floating Gate 0001b = 0.17 m Floating Gate 0010b = 0.23 m MirrorBit 0011b = 0.11 m Floating Gate 0100b = 0.11 m MirrorBit 0101b = 0.09 m MirrorBit 1000b = 0.065 m MirrorBit 46h 02h Erase Suspend 0 = Not Supported, 1 = Read Only, 2 = Read and Program 47h 01h Sector Protect 00 = Not Supported, X = Number of sectors in group 48h 00h Temporary Sector Unprotect 00 = Not Supported, 01 = Supported 49h 08h Sector Protect/Unprotect Scheme 04 = High Voltage Method 05 = Software Command Locking Method 08 = Advanced Sector Protection Method 4Ah 00h Simultaneous Operation 00 = Not Supported, X = Number of Sectors 4Bh 01h Burst Mode (Synchronous sequential read) support 00 = Not Supported, 01 = Supported 4Ch 03h Page Mode Type, initial delivery configuration, user configurable for 512B page 00 = Not Supported, 01 = 4 Word Read Page, 02 = 8 Read Word Page, 03 = 256 Byte Program Page, 04 = 512 Byte Program Page 4Dh 00h ACC (Acceleration) Supply Minimum 00 = Not Supported, 100 mV Document Number: 002-03631 Rev. *C Page 126 of 147 PRELIMINARY S25FS064S Table 13.6 CFI Primary Vendor-Specific Extended Query (Continued) Byte Address Data Description 00h ACC (Acceleration) Supply Maximum 00 = Not Supported, 100 mV 4Fh 07h WP# Protection 01 = Whole Chip 04 = Uniform Device with Bottom WP Protect 05 = Uniform Device with Top WP Protect 07 = Uniform Device with Top or Bottom Write Protect (user configurable) 50h 01h Program Suspend 00 = Not Supported, 01 = Supported 4Eh The Alternate Vendor-Specific Extended Query provides information related to the expanded command set provided by the FS-S Family. The alternate query parameters use a format in which each parameter begins with an identifier byte and a parameter length byte. Driver software can check each parameter ID and can use the length value to skip to the next parameter if the parameter is not needed or not recognized by the software. Table 13.7 CFI Alternate Vendor-Specific Extended Query Header Byte Address Data 51h 41h 52h 4Ch Description Query-unique ASCII string "ALT" 53h 54h 54h 32h Major version number = 2, ASCII 55h 30h Minor version number = 0, ASCII Table 13.8 CFI Alternate Vendor-Specific Extended Query Parameter 0 Parameter Relative Byte Address Offset Data 56h 00h Parameter ID (Ordering Part Number) 57h 10h Parameter Length (The number of following bytes in this parameter. Adding this value to the current location value +1 = the first byte of the next parameter) 58h 53h Ascii "S" for manufacturer (Cypress) 59h 32h 5Ah 35h 5Bh 46h 5Ch 53h 5Dh 30h (64 Mb) 5Eh 36h (64Mb) 5Fh 34h (64Mb) 60h 53h 61h FFh 62h FFh 63h FFh 64h FFh 65h FFh 66h xxh 67h xxh Document Number: 002-03631 Rev. *C Description Ascii "25" for Product Characters (Single Die SPI) Ascii "FS" for Interface Characters (SPI 1.8Volt) Ascii characters for density Ascii "S" for Technology (65nm MirrorBit) Reserved for Future Use Reserved for Future Use Reserved for Future Use ASCII characters for Model Refer to Ordering Part Number on page 143 for the model number definitions. Page 127 of 147 PRELIMINARY S25FS064S Table 13.9 CFI Alternate Vendor-Specific Extended Query Parameter 80h Address Options Parameter Relative Byte Address Offset Data 68h 80h Parameter ID (Ordering Part Number) 69h 01h Parameter Length (The number of following bytes in this parameter. Adding this value to the current location value +1 = the first byte of the next parameter) EBh Bits 7:5 - Reserved = 111b Bit 4 - Address Length Bit in CR2V[7] - Yes= 0b Bit 3 - AutoBoot support - No = 1b Bit 2 - 4 byte address instructions supported - Yes= 0b Bit 1 - Bank address + 3 byte address instructions supported - No = 1b Bit 0 - 3 byte address instructions supported - No = 1b 6Ah Description Table 13.10 CFI Alternate Vendor-Specific Extended Query Parameter 84h Suspend Commands Parameter Relative Byte Address Offset Data 6Bh 84h Parameter ID (Suspend Commands 6Ch 08h Parameter Length (The number of following bytes in this parameter. Adding this value to the current location value +1 = the first byte of the next parameter) 6Dh 85h Program suspend instruction code 6Eh 2Dh Program suspend latency maximum (uS) 6Fh 8Ah Program resume instruction code 70h 64h Program resume to next suspend typical (uS) 71h 75h Erase suspend instruction code 72h 2Dh Erase suspend latency maximum (uS) 73h 7Ah Erase resume instruction code 74h 64h Erase resume to next suspend typical (uS) Description Table 13.11 CFI Alternate Vendor-Specific Extended Query Parameter 88h Data Protection Parameter Relative Byte Address Offset Data 75h 88h Parameter ID (Data Protection) 76h 04h Parameter Length (The number of following bytes in this parameter. Adding this value to the current location value +1 = the first byte of the next parameter) 77h 0Ah OTP size 2^N bytes, FFh = not supported 78h 01h OTP address map format, 01h = FL-S and FS-S format, FFh = not supported 79h xxh Block Protect Type, model dependent 00h = FL-P, FL-S, FS-S FFh = not supported 7Ah xxh Advanced Sector Protection type, model dependent 01h = FL-S and FS-S ASP. Description Table 13.12 CFI Alternate Vendor-Specific Extended Query Parameter 94h ECC Parameter Relative Byte Address Offset Data 83h 94h Parameter ID (ECC) 84h 01h Parameter Length (The number of following bytes in this parameter. Adding this value to the current location value +1 = the first byte of the next parameter) 85h 10h ECC unit size byte, FFh = ECC disabled Document Number: 002-03631 Rev. *C Description Page 128 of 147 PRELIMINARY S25FS064S Table 13.13 CFI Alternate Vendor-Specific Extended Query Parameter 8Ch Reset Timing Parameter Relative Byte Address Offset Data 7Bh 8Ch Parameter ID (Reset Timing) 7Ch 06h Parameter Length (The number of following bytes in this parameter. Adding this value to the current location value +1 = the first byte of the next parameter) 7Dh 96h POR maximum value 7Eh 01h POR maximum exponent 2^N uS 7Fh 23h Hardware Reset maximum value, FFh = not supported (the initial delivery state has hardware reset disabled but it may be enabled by the user at a later time) Description 80h 00h Hardware Reset maximum exponent 2^N uS 81h 23h Software Reset maximum value, FFh = not supported 82h 00h Software Reset maximum exponent 2^N uS Table 13.14 CFI Alternate Vendor-Specific Extended Query Parameter F0h RFU Parameter Relative Byte Address Offset Data 83h F0h Parameter ID (RFU) 84h 09h Parameter Length (The number of following bytes in this parameter. Adding this value to the current location value +1 = the first byte of the next parameter) 85h FFh RFU Description ... FFh RFU 8Dh FFh RFU This parameter type (Parameter ID F0h) may appear multiple times and have a different length each time. The parameter is used to reserve space in the ID-CFI map or to force space (pad) to align a following parameter to a required boundary. Document Number: 002-03631 Rev. *C Page 129 of 147 PRELIMINARY 13.3 S25FS064S Serial Flash Discoverable Parameters (SFDP) Address Map 13.3.1 JEDEC SFDP Rev B Header Table Table 13.15 SFDP Header SFDP Byte Address SFDP Dword Name Data 00h 53h This is the entry point for Read SFDP (5Ah) command i.e. location zero within SFDP space ASCII "S" 01h SFDP Header 1st DWORD 46h ASCII "F" 44h ASCII "D" 50h ASCII "P" 06h SFDP Minor Revision (06h = JEDEC JESD216 Revision B) This revision is backward compatible with all prior minor revisions. Minor revisions are changes that define previously reserved fields, add fields to the end, or that clarify definitions of existing fields. Increments of the minor revision value indicate that previously reserved parameter fields may have been assigned a new definition or entire Dwords may have been added to the parameter table. However, the definition of previously existing fields is unchanged and therefore remain backward compatible with earlier SFDP parameter table revisions. Software can safely ignore increments of the minor revision number, as long as only those parameters the software was designed to support are used i.e. previously reserved fields and additional Dwords must be masked or ignored. Do not do a simple compare on the minor revision number, looking only for a match with the revision number that the software is designed to handle. There is no problem with using a higher number minor revision. 01h SFDP Major Revision This is the original major revision. This major revision is compatible with all SFDP reading and parsing software. 06h 05h Number of Parameter Headers (zero based, 05h = 6 parameters) 07h FFh Unused 08h 00h Parameter ID LSB (00h = JEDEC SFDP Basic SPI Flash Parameter) 00h Parameter Minor Revision (00h = JESD216) - This older revision parameter header is provided for any legacy SFDP reading and parsing software that requires seeing a minor revision 0 parameter header. SFDP software designed to handle later minor revisions should continue reading parameter headers looking for a higher numbered minor revision that contains additional parameters for that software revision. 0Ah 01h Parameter Major Revision (01h = The original major revision - all SFDP software is compatible with this major revision. 0Bh 09h Parameter Table Length (in double words = Dwords = 4 byte units) 09h = 9 Dwords 0Ch 90h Parameter Table Pointer Byte 0 (Dword = 4 byte aligned) JEDEC Basic SPI Flash parameter byte offset = 1090h 10h Parameter Table Pointer Byte 1 00h Parameter Table Pointer Byte 2 02h 03h 04h SFDP Header 2nd DWORD 05h 09h 0Dh 0Eh Parameter Header 0 1st DWORD Parameter Header 0 2nd DWORD Description 0Fh FFh Parameter ID MSB (FFh = JEDEC defined legacy Parameter ID) 10h 00h Parameter ID LSB (00h = JEDEC SFDP Basic SPI Flash Parameter) 05h Parameter Minor Revision (05h = JESD216 Revision A) - This older revision parameter header is provided for any legacy SFDP reading and parsing software that requires seeing a minor revision 5 parameter header. SFDP software designed to handle later minor revisions should continue reading parameter headers looking for a later minor revision that contains additional parameters. 12h 01h Parameter Major Revision (01h = The original major revision - all SFDP software is compatible with this major revision. 13h 10h Parameter Table Length (in double words = Dwords = 4 byte units) 10h = 16 Dwords 14h 90h Parameter Table Pointer Byte 0 (Dword = 4 byte aligned) JEDEC Basic SPI Flash parameter byte offset = 1090h address 10h Parameter Table Pointer Byte 1 00h Parameter Table Pointer Byte 2 FFh Parameter ID MSB (FFh = JEDEC defined Parameter) 11h 15h 16h Parameter Header 1 1st DWORD Parameter Header 1 2nd DWORD 17h Document Number: 002-03631 Rev. *C Page 130 of 147 PRELIMINARY S25FS064S Table 13.15 SFDP Header (Continued) SFDP Byte Address SFDP Dword Name Data Description 18h 00h Parameter ID LSB (00h = JEDEC SFDP Basic SPI Flash Parameter) 19h 06h Parameter Minor Revision (06h = JESD216 Revision B) 01h Parameter Major Revision (01h = The original major revision - all SFDP software is compatible with this major revision. 1Bh 10h Parameter Table Length (in double words = Dwords = 4 byte units) 10h = 16 Dwords 1Ch 90h Parameter Table Pointer Byte 0 (Dword = 4 byte aligned) JEDEC Basic SPI Flash parameter byte offset = 1090h address 1Ah 1Dh Parameter Header 2 1st DWORD Parameter Header 2 2nd DWORD 10h Parameter Table Pointer Byte 1 00h Parameter Table Pointer Byte 2 1Fh FFh Parameter ID MSB (FFh = JEDEC defined Parameter) 20h 81h Parameter ID LSB (81h = SFDP Sector Map Parameter) 00h Parameter Minor Revision (00h = Initial version as defined in JESD216 Revision B) 01h Parameter Major Revision (01h = The original major revision - all SFDP software that recognizes this parameter's ID is compatible with this major revision. 23h 1Ah Parameter Table Length (in double words = Dwords = 4 byte units) OPN Dependent 26 = 1Ah 24h D8h Parameter Table Pointer Byte 0 (Dword = 4 byte aligned) JEDEC parameter byte offset = 10D8h 10h Parameter Table Pointer Byte 1 00h Parameter Table Pointer Byte 2 1Eh 21h 22h 25h 26h Parameter Header 3 1st DWORD Parameter Header 3 2nd DWORD 27h FFh Parameter ID MSB (FFh = JEDEC defined Parameter) 28h 84h Parameter ID LSB (00h = SFDP 4 Byte Address Instructions Parameter) 00h Parameter Minor Revision (00h = Initial version as defined in JESD216 Revision B) 01h Parameter Major Revision (01h = The original major revision - all SFDP software that recognizes this parameter's ID is compatible with this major revision. 2Bh 02h Parameter Table Length (in double words = Dwords = 4 byte units) (2h = 2 Dwords) 2Ch D0h Parameter Table Pointer Byte 0 (Dword = 4 byte aligned) JEDEC parameter byte offset = 10D0h 10h Parameter Table Pointer Byte 1 29h 2Ah 2Dh 2Eh Parameter Header 4 1st DWORD Parameter Header 4 2nd DWORD 00h Parameter Table Pointer Byte 2 2Fh FFh Parameter ID MSB (FFh = JEDEC defined Parameter) 30h 01h Parameter ID LSB (Cypress Vendor Specific ID-CFI parameter) Legacy Manufacturer ID 01h = AMD / Spansion 01h Parameter Minor Revision (01h = ID-CFI updated with SFDP Rev B table) 01h Parameter Major Revision (01h = The original major revision - all SFDP software that recognizes this parameter's ID is compatible with this major revision. 33h 50h Parameter Table Length (in double words = Dwords = 4 byte units) Parameter Table Length (in double words = Dwords = 4 byte units) 34h 00h Parameter Table Pointer Byte 0 (Dword = 4 byte aligned) Entry point for ID-CFI parameter is byte offset = 1000h relative to SFDP location zero. 10h Parameter Table Pointer Byte 1 31h 32h 35h 36h Parameter Header 5 1st DWORD Parameter Header 5 2nd DWORD 37h Document Number: 002-03631 Rev. *C 00h Parameter Table Pointer Byte 2 01h Parameter ID MSB (01h = JEDEC JEP106 Bank Number 1) Page 131 of 147 PRELIMINARY S25FS064S 13.3.2 JEDEC SFDP Rev B Parameter Tables From the view point of the CFI data structure, all of the SFDP parameter tables are combined into a single CFI Parameter as a contiguous byte sequence. From the viewpoint of the SFDP data structure, there are three independent parameter tables. Two of the tables have a fixed length and one table has a variable structure and length depending on the device density Ordering Part Number (OPN). The Basic Flash Parameter table and the 4-Byte Address Instructions Parameter table have a fixed length and are presented below as a single table. This table is section 1 of the overall CFI parameter. The JEDEC Sector Map Parameter table structure and length depends on the density OPN and is presented as a set of tables, one for each device density. The appropriate table for the OPN is section 2 of the overall CFI parameter and is appended to section 1. Table 13.16 CFI and SFDP Section 1, Basic Flash and 4 Byte Address Instructions Parameter CFI Parameter Relative Byte Address Offset from108Eh SFDP Parameter Relative Byte Address Offset from1090h SFDP Dword Name Data 00h -- N/A A5h CFI Parameter ID (JEDEC SFDP) 01h -- N/A B0h CFI Parameter Length (The number of following bytes in this parameter. Adding this value to the current location value +1 = the first byte of the next parameter). OPN dependent: 18Dw + 26Dw = 44Dw *4B = 176B = B0h B E7h Start of SFDP JEDEC parameter, located at 1090h in the overall SFDP address space. Bits 7:5 = unused = 111b Bit 4:3 = 06h is status register write instruction and status register is default non-volatile= 00b Bit 2 = Program Buffer > 64Bytes = 1 Bits 1:0 = Uniform 4KB erase unavailable = 11b 02h 00h 03h 01h JEDEC Basic Flash Parameter Dword-1 Description FFh Bits 15:8 = Uniform 4KB erase opcode = not supported = FFh 04h 02h FBh Bit 23 = Unused = 1b Bit 22 = Supports Quad Out Read = Yes= 1b Bit 21 = Supports Quad I/O Read = Yes =1b Bit 20 = Supports Dual I/O Read = Yes = 1b Bit19 = Supports DDR = Yes =1b; Bit 18:17 = Number of Address Bytes, 3 or 4 = 01b Bit 16 = Supports Dual Out Read = Yes =1b 05h 03h FFh Bits 31:24 = Unused = FFh 06h 04h 07h 05h 08h 06h 09h 07h 03h (64 Mb) 0Ah 08h 48h Bits 7:5 = number of Quad I/O (1-4-4) Mode cycles = 010b Bits 4:0 = number of Quad I/O Dummy cycles = 01000b (Initial Delivery State) 0Bh 09h EBh Quad I/O instruction code 0Ch 0Ah 08h Bits 23:21 = number of Quad Out (1-1-4) Mode cycles = 000b Bits 20:16 = number of Quad Out Dummy cycles = 01000b 0Dh 0Bh 0Eh 0Ch 0Fh 0Dh FFh JEDEC Basic Flash Parameter Dword-2 JEDEC Basic Flash Parameter Dword-3 JEDEC Basic Flash Parameter Dword-4 FFh FFh Density in bits, zero based, 16Mb = 00FFFFFFh 6Bh Quad Out instruction code 08h Bits 7:5 = number of Dual Out (1-1-2) Mode cycles = 000b Bits 4:0 = number of Dual Out Dummy cycles = 01000b 3Bh Dual Out instruction code 88h Bits 23:21 = number of Dual I/O (1-2-2) Mode cycles = 100b Bits 20:16 = number of Dual I/O Dummy cycles = 01000b (Initial Delivery State) 10h 0Eh 11h 0Fh BBh Dual I/O instruction code 12h 10h FEh Bits 7:5 RFU = 111b Bit 4 = QPI supported = Yes = 1b Bits 3:1 RFU = 111b Bit 0 = Dual All not supported = 0b JEDEC Basic Flash Parameter Dword-5 13h 11h FFh Bits 15:8 = RFU = FFh 14h 12h FFh Bits 23:16 = RFU = FFh 15h 13h FFh Bits 31:24 = RFU = FFh Document Number: 002-03631 Rev. *C Page 132 of 147 PRELIMINARY S25FS064S Table 13.16 CFI and SFDP Section 1, Basic Flash and 4 Byte Address Instructions Parameter (Continued) CFI Parameter Relative Byte Address Offset from108Eh SFDP Parameter Relative Byte Address Offset from1090h 16h 14h 17h 15h 18h 16h 19h 17h 1Ah 18h 1Bh 19h 1Ch 1Ah 1Dh 1Bh 1Eh 1Ch 1Fh 1Dh 20h 1Eh 21h 1Fh 22h 20h 23h 21h SFDP Dword Name JEDEC Basic Flash Parameter Dword-6 JEDEC Basic Flash Parameter Dword-7 JEDEC Basic Flash Parameter Dword-8 JEDEC Basic Flash Parameter Dword-9 Data Description FFh Bits 7:0 = RFU = FFh FFh Bits 15:8 = RFU = FFh FFh Bits 23:21 = number of Dual All Mode cycles = 111b Bits 20:16 = number of Dual All Dummy cycles = 11111b FFh Dual All instruction code FFh Bits 7:0 = RFU = FFh FFh Bits 15:8 = RFU = FFh 48h Bits 23:21 = number of QPI Mode cycles = 010b Bits 20:16 = number of QPI Dummy cycles = 01000b EBh QPI mode Quad I/O (4-4-4) instruction code 0Ch Erase type 1 size 2^N Bytes = 4KB = 0Ch for Hybrid (Initial Delivery State) 20h Erase type 1 instruction 10h Erase type 2 size 2^N Bytes = 64KB = 10h D8h Erase type 2 instruction 12h Erase type 3 size 2^N Bytes = 256KB = 12h D8h Erase type 3 instruction 24h 22h 00h Erase type 4 size 2^N Bytes = not supported = 00h 25h 23h FFh Erase type 4 instruction = not supported = FFh Bits 31:30 = Erase type 4 Erase, Typical time units (00b: 1 ms, 01b: 16 ms, 10b: 128 ms, 11b: 1 s) = 1S = 11b (RFU) Bits 29:25 = Erase type 4 Erase, Typical time count = 11111b (RFU) Bits 24:23 = Erase type 3 Erase, Typical time units (00b: 1 ms, 01b: 16 ms, 10b: 128 ms, 11b: 1 s) = 128mS = 10b Bits 22:18 = Erase type 3 Erase, Typical time count = 00111b (typ erase time = count +1 * units = 8*128mS = 1024mS) Bits 17:16 = Erase type 2 Erase, Typical time units (00b: 1 ms, 01b: 16 ms, 10b: 128 ms, 11b: 1 s) = 16mS = 01b Bits 15:11 = Erase type 2 Erase, Typical time count = 01110b (typ erase time = count +1 * units = 15*16mS = 240mS) Bits 10:9 = Erase type 1 Erase, Typical time units (00b: 1 ms, 01b: 16 ms, 10b: 128 ms, 11b: 1 s) = 16mS = 01b Bits 8:4 = Erase type 1 Erase, Typical time count = 01011b (typ erase time = count +1 * units = 12*16mS = 192mS) Bits 3:0 = Multiplier from typical erase time to maximum erase time = 2*(N+1), N=2h = 4x multiplier 26h 24h B1h 27h 25h 72h 28h 26h 1Dh JEDEC Basic Flash Parameter Dword-10 29h 27h FFh Binary Fields: 11-11111-10-00111-01-01110-01-01011-0001 Nibble Format: 1111_1111_0001_1101_0111_0010_1011_0001 Hex Format: FF_1D_72_B1 Document Number: 002-03631 Rev. *C Page 133 of 147 PRELIMINARY S25FS064S Table 13.16 CFI and SFDP Section 1, Basic Flash and 4 Byte Address Instructions Parameter (Continued) CFI Parameter Relative Byte Address Offset from108Eh SFDP Parameter Relative Byte Address Offset from1090h 2Ah SFDP Dword Name Data Description 28h 82h 2Bh 29h 26h 2Ch 2Ah 07h Bit 31 Reserved = 1b Bits 30:29 = Chip Erase, Typical time units (00b: 16 ms, 01b: 256 ms, 10b: 4 s, 11b: 64 s) = 64Mb = 4s = 10b; Bits 28:24 = Chip Erase, Typical time count, (count+1)*units, 64 Mb = 00111b = (7+1)*4 = 32s; Bits 23 = Byte Program Typical time, additional byte units (0b:1uS, 1b:8uS) = 1uS = 0b Bits 22:19 = Byte Program Typical time, additional byte count, (count+1)*units, count = 0000b, ( typ Program time = count +1 * units = 1*1uS = 1uS Bits 18 = Byte Program Typical time, first byte units (0b:1uS, 1b:8uS) = 8uS = 1b Bits 17:14 = Byte Program Typical time, first byte count, (count+1)*units, count = 1100b, ( typ Program time = count +1 * units = 13*8uS = 104uS Bits 13 = Page Program Typical time units (0b:8uS, 1b:64uS) = 64uS = 1b Bits 12:8 = Page Program Typical time count, (count+1)*units, count = 00110b, ( typ Program time = count +1 * units = 6*64uS = 384uS) Bits 7:4 = Page size 2^N, N=8h, = 256B page Bits 3:0 = Multiplier from typical time to maximum for Page or Byte program = 2*(N+1), N=2h = 6x multiplier JEDEC Basic Flash Parameter Dword-11 2Dh 2Bh C7h 64Mb Binary Fields: 1-10-00111-0-0000-1-1100-1-00110-1000-0010 Nibble Format: 1100_0111_0000_0111_0010_0110_1001_0010 Hex Format: C7_07_26_82 2Eh 2Ch ECh 2Fh 2Dh 93h 30h 2Eh 18h JEDEC Basic Flash Parameter Dword-12 31h 2Fh 45h Bit 31 = Suspend and Resume supported = 0b Bits 30:29 = Suspend in-progress erase max latency units (00b: 128ns, 01b: 1us, 10b: 8us, 11b: 64us) = 8us= 10b Bits 28:24 = Suspend in-progress erase max latency count = 00101b, max erase suspend latency = count +1 * units = 6*8uS = 48uS Bits 23:20 = Erase resume to suspend interval count = 0001b, interval = count +1 * 64us = 2 * 64us = 128us Bits 19:18 = Suspend in-progress program max latency units (00b: 128ns, 01b: 1us, 10b: 8us, 11b: 64us) = 8us= 10b Bits 17:13 = Suspend in-progress program max latency count = 00101b, max erase suspend latency = count +1 * units = 6*8uS = 48uS Bits 12:9 = Program resume to suspend interval count = 0001b, interval = count +1 * 64us = 2 * 64us = 128us Bit 8 = RFU = 1b Bits 7:4 = Prohibited operations during erase suspend = xxx0b: May not initiate a new erase anywhere (erase nesting not permitted) + xx1xb: May not initiate a page program in the erase suspended sector size + x1xxb: May not initiate a read in the erase suspended sector size + 1xxxb: The erase and program restrictions in bits 5:4 are sufficient = 1110b Bits 3:0 = Prohibited Operations During Program Suspend = xxx0b: May not initiate a new erase anywhere (erase nesting not permitted) + xx0xb: May not initiate a new page program anywhere (program nesting not permitted) + x1xxb: May not initiate a read in the program suspended page size + 1xxxb: The erase and program restrictions in bits 1:0 are sufficient = 1100b Binary Fields: 0-10-00101-0001-10-00100-1001-1-1110-1100 Nibble Format: 0100_0101_0001_1000_1001_0011_1110_1100 Hex Format: 45_18_93_EC 32h 30h 33h 31h 34h 32h 35h 33h 8Ah JEDEC Basic Flash Parameter Dword-13 Document Number: 002-03631 Rev. *C 85h 7Ah 75h Bits 31:24 = Erase Suspend Instruction = 75h Bits 23:16 = Erase Resume Instruction = 7Ah Bits 15:8 = Program Suspend Instruction = 85h Bits 7:0 = Program Resume Instruction = 8Ah Page 134 of 147 PRELIMINARY S25FS064S Table 13.16 CFI and SFDP Section 1, Basic Flash and 4 Byte Address Instructions Parameter (Continued) CFI Parameter Relative Byte Address Offset from108Eh SFDP Parameter Relative Byte Address Offset from1090h 36h SFDP Dword Name Data Description 34h F7h 37h 35h BDh 38h 36h D5h Bit 31 = Deep Power Down Supported = supported = 0 Bits 30:23 = Enter Deep Power Down Instruction = B9h Bits 22:15 = Exit Deep Power Down Instruction = ABh Bits 14:13 = Exit Deep Power Down to next operation delay units = (00b: 128ns, 01b: 1us, 10b: 8us, 11b: 64us) = 1us = 01b Bits 12:8 = Exit Deep Power Down to next operation delay count = 11101b, Exit Deep Power Down to next operation delay = (count+1)*units = 29+1 *1us = 30us Bits 7:4 = RFU = Fh Bit 3:2 = Status Register Polling Device Busy = 01b: Legacy status polling supported = Use legacy polling by reading the Status Register with 05h instruction and checking WIP bit[0] (0=ready; 1=busy). = 01b Bits 1:0 = RFU = 11b JEDEC Basic Flash Parameter Dword-14 39h 37h 5Ch Binary Fields: 0-10111001-10101011-01-11101-1111-01-11 Nibble Format: 0101_1100_1101_0101_1011_1101_1111_0111 Hex Format: 5C_D5_BD_F7 3Ah 38h 8Ch 3Bh 39h F6h 3Ch 3Ah 5Dh JEDEC Basic Flash Parameter Dword-15 3Dh 3Bh FFh Bits 31:24 = RFU = FFh Bit 23 = Hold and WP Disable = not supported = 0b Bits 22:20 = Quad Enable Requirements = 101b: QE is bit 1 of the status register 2. Status register 1 is read using Read Status instruction 05h. Status register 2 is read using instruction 35h. QE is set via Write Status instruction 01h with two data bytes where bit 1 of the second byte is one. It is cleared via Write Status with two data bytes where bit 1 of the second byte is zero. Bits 19:16 0-4-4 Mode Entry Method = xxx1b: Mode Bits[7:0] = A5h Note: QE must be set prior to using this mode + x1xxb: Mode Bit[7:0]=Axh + 1xxxb: RFU = 1101b Bits 15:10 0-4-4 Mode Exit Method = xx_xxx1b: Mode Bits[7:0] = 00h will terminate this mode at the end of the current read operation + xx_1xxxb: Input Fh (mode bit reset) on DQ0-DQ3 for 8 clocks. This will terminate the mode prior to the next read operation. + x1_xxxxb: Mode Bit[7:0] != Axh + 1x_x1xx: RFU = 11_1101 Bit 9 = 0-4-4 mode supported = 1 Bits 8:4 = 4-4-4 mode enable sequences = x_1xxxb: device uses a read-modify-write sequence of operations: read configuration using instruction 65h followed by address 800003h, set bit 6, write configuration using instruction 71h followed by address 800003h. This configuration is volatile. = 01000b Bits 3:0 = 4-4-4 mode disable sequences = x1xxb: device uses a read-modify-write sequence of operations: read configuration using instruction 65h followed by address 800003h, clear bit 6, write configuration using instruction 71h followed by address 800003h.. This configuration is volatile. + 1xxxb: issue the Soft Reset 66/99 sequence = 1100b Binary Fields: 11111111-0-101-1101-111101-1-01000-1100 Nibble Format: 1111_1111_0101_1101_1111_0110_1000-1100 Hex Format: FF_5D_F6_8C Document Number: 002-03631 Rev. *C Page 135 of 147 PRELIMINARY S25FS064S Table 13.16 CFI and SFDP Section 1, Basic Flash and 4 Byte Address Instructions Parameter (Continued) CFI Parameter Relative Byte Address Offset from108Eh SFDP Parameter Relative Byte Address Offset from1090h 3Eh 3Ch 3Fh 3Dh 30h 40h 3Eh F8h SFDP Dword Name Data Description F0h Bits 31:24 = Enter 4-Byte Addressing = xxxx_xxx1b: issue instruction B7h (preceding write enable not required) + xx1x_xxxxb: Supports dedicated 4-Byte address instruction set. Consult vendor data sheet for the instruction set definition. + 1xxx_xxxxb: Reserved = 10100001b Bits 23:14 = Exit 4-Byte Addressing = xx_xx1x_xxxxb: Hardware reset + xx_x1xx_xxxxb: Software reset (see bits 13:8 in this DWORD) + xx_1xxx_xxxxb: Power cycle + x1_xxxx_xxxxb: Reserved + 1x_xxxx_xxxxb: Reserved = 11_1110_0000b Bits 13:8 = Soft Reset and Rescue Sequence Support = x1_xxxxb: issue reset enable instruction 66h, then issue reset instruction 99h. The reset enable, reset sequence may be issued on 1, 2, or 4 wires depending on the device operating mode. + 1x_xxxxb: exit 0-4-4 mode is required prior to other reset sequences above if the device may be operating in this mode. = 110000b Bit 7 = RFU = 1 Bits 6:0 = Volatile or Non-Volatile Register and Write Enable Instruction for Status Register 1 = + xx1_xxxxb: Status Register 1 contains a mix of volatile and non-volatile bits. The 06h instruction is used to enable writing of the register. + x1x_xxxxb: Reserved + 1xx_xxxxb: Reserved = 1110000b JEDEC Basic Flash Parameter Dword-16 41h 3Fh A1h Binary Fields: 10100001-1111100000-110000-1-1110000 Nibble Format: 1010_0001_1111_1000_0011_0000_1111_0000 Hex Format: A1_F8_30_F0 42h 40h FFh 43h 41h CEh 44h 42h FFh 45h 43h 46h 44h 47h 45h 48h 46h 49h 47h JEDEC 4 Byte Address Instructions Parameter Dword-1 JEDEC 4 Byte Address Instructions Parameter Dword-2 Document Number: 002-03631 Rev. *C FFh 21h DCh DCh FFh Supported = 1, Not Supported = 0 Bits 31:20 = RFU = FFFh Bit 19 = Support for non-volatile individual sector lock write command, Instruction=E3h = 1 Bit 18 = Support for non-volatile individual sector lock read command, Instruction=E2h = 1 Bit 17 = Support for volatile individual sector lock Write command, Instruction=E1h = 1 Bit 16 = Support for volatile individual sector lock Read command, Instruction=E0h = 1 Bit 15 = Support for (1-4-4) DTR_Read Command, Instruction=EEh = 1 Bit 14 = Support for (1-2-2) DTR_Read Command, Instruction=BEh = 0 Bit 13 = Support for (1-1-1) DTR_Read Command, Instruction=0Eh = 0 Bit 12 = Support for Erase Command - Type 4 = 0 Bit 11 = Support for Erase Command - Type 3 = 1 Bit 10 = Support for Erase Command - Type 2 = 1 Bit 9 = Support for Erase Command - Type 1 = 1 Bit 8 = Support for (1-4-4) Page Program Command, Instruction=3Eh =0 Bit 7 = Support for (1-1-4) Page Program Command, Instruction=34h = 1 Bit 6 = Support for (1-1-1) Page Program Command, Instruction=12h = 1 Bit 5 = Support for (1-4-4) FAST_READ Command, Instruction=ECh = 1 Bit 4 = Support for (1-1-4) FAST_READ Command, Instruction=6Ch = 1 Bit 3 = Support for (1-2-2) FAST_READ Command, Instruction=BCh = 1 Bit 2 = Support for (1-1-2) FAST_READ Command, Instruction=3Ch = 1 Bit 1 = Support for (1-1-1) FAST_READ Command, Instruction=0Ch = 1 Bit 0 = Support for (1-1-1) READ Command, Instruction=13h = 1 Bits 31:24 = FFh = Instruction for Erase Type 4: RFU Bits 23:16 = DCh = Instruction for Erase Type 3 Bits 15:8 = DCh = Instruction for Erase Type 2 Bits 7:0 = 21h = Instruction for Erase Type 1 Page 136 of 147 PRELIMINARY S25FS064S Sector Map Parameter Table Notes: The following Sector Map Parameter Table provides a means to identify how the device address map is configured and provides a sector map for each supported configuration. This is done by defining a sequence of commands to read out the relevant configuration register bits that affect the selection of an address map. When more than one configuration bit must be read, all the bits are concatenated into an index value that is used to select the current address map. To identify the sector map configuration in S25FS064S the following configuration bits are read in the following MSB to LSB order to form the configuration map index value: CR3NV[3] - 0 = Hybrid Architecture, 1 = Uniform Architecture CR1NV[2] - 0 = 4KB parameter sectors at bottom, 1 = 4KB sectors at top CR3NV[1] - 0= 64KB uniform sector size, 1 = 256KB uniform sector size The value of some configuration bits may make other configuration bit values not relevant (don't care), hence not all possible combinations of the index value define valid address maps. Only selected configuration bit combinations are supported by the SFDP Sector Map Parameter Table. Other combinations must not be used in configuring the sector address map when using this SFDP parameter table to determine the sector map. The following index value combinations are supported: Device FS64S CR3NV[3] CR1NV[2] CR3NV[1] Index Value 0 0 0 00h 4KB sectors at bottom with remainder 64KB sectors Description 0 1 0 02h 4KB sectors at top with remainder 64KB sectors 0 0 1 01h 4KB sectors at bottom with remainder 256KB sectors 0 1 1 03h 4KB sectors at top with remainder 256KB sectors 1 0 0 04h Uniform 64KB sectors 1 0 0 05h Uniform 256KB sectors Table 13.17 CFI and SFDP Section 2, Sector Map Parameter Table CFI Parameter Relative Byte Address Offset SFDP Parameter Relative Byte Address Offset 4Ah 4Bh 4Ch 4Ah 4Dh 4Bh 4Eh 4Ch 4Fh 4Dh 50h 4Eh 51h 4Fh 52h 50h FCh 53h 51h 65h 54h 52h 55h 53h SFDP Dword Name Data Description 48h FCh 49h 65h Bits 31:24 = Read data mask = 0000_1000b: Select bit 3 of the data byte for 20h_NV value 0= Hybrid map with 4KB parameter sectors 1= Uniform map Bits 23:22 = Configuration detection command address length = 11b: Variable length Bits 21:20 = RFU = 11b Bits 19:16 = Configuration detection command latency = 1111b: variable latency Bits 15:8 = Configuration detection instruction = 65h: Read any register Bits 7:2 = RFU = 111111b Bit 1 = Command Descriptor = 0 Bit 0 = not the end descriptor = 0 JEDEC Sector Map Parameter Dword-1 Config. Detect-1 JEDEC Sector Map Parameter Dword-2 Config. Detect-1 JEDEC Sector Map Parameter Dword-3 Config. Detect-2 Document Number: 002-03631 Rev. *C FFh 08h 04h 00h 00h Bits 31:0 = Sector map configuration detection command address = 00_00_00_04h: address of CR3NV 00h FFh 04h Bits 31:24 = Read data mask = 0000_0100b: Select bit 2 of the data byte for TBPARM_O value 0= 4KB parameter sectors at bottom 1= 4KB parameter sectors at top Bits 23:22 = Configuration detection command address length = 11b: Variable length Bits 21:20 = RFU = 11b Bits 19:16 = Configuration detection command latency = 1111b: variable latency Bits 15:8 = Configuration detection instruction = 65h: Read any register Bits 7:2 = RFU = 111111b Bit 1 = Command Descriptor = 0 Bit 0 = not the end descriptor = 0 Page 137 of 147 PRELIMINARY S25FS064S Table 13.17 CFI and SFDP Section 2, Sector Map Parameter Table (Continued) CFI Parameter Relative Byte Address Offset SFDP Parameter Relative Byte Address Offset 56h 54h 57h 55h 58h 56h 59h 57h SFDP Dword Name JEDEC Sector Map Parameter Dword-4 Config. Detect-2 Data 02h 00h 00h 5Ah 58h FDh 59h 65h 5Ch 5Ah 5Dh 5Bh 5Eh 5Ch 5Fh 5Dh 60h 5Eh 61h 5Fh 62h 60h 63h 61h 64h 62h 65h 63h JEDEC Sector Map Parameter Dword-6 Config. Detect-3 JEDEC Sector Map Parameter Dword-7 Config-0 Header FFh 02h 00h 00h FEh 00h 02h FFh 64h F1h 65h 7Fh 68h 66h 69h 67h 6Ah 68h F2h 7Fh 6Bh 69h 6Ah 6Dh 6Bh JEDEC Sector Map Parameter Dword-9 Config-0 Region-1 Document Number: 002-03631 Rev. *C Bits 31:0 = Sector map configuration detection command address = 00_00_00_04h: address of CR3NV 00h 67h 6Ch Bits 31:24 = Read data mask = 0000_0010b: Select bit 1 of the data byte for D8h_NV value 0= 64KB uniform sectors 1= 256KB uniform sectors Bits 23:22 = Configuration detection command address length = 11b: Variable length Bits 21:20 = RFU = 11b Bits 19:16 = Configuration detection command latency = 1111b: variable latency Bits 15:8 = Configuration detection instruction = 65h: Read any register Bits 7:2 = RFU = 111111b Bit 1 = Command Descriptor = 0 Bit 0 = The end descriptor = 1 04h 66h JEDEC Sector Map Parameter Dword-8 Config-0 Region-0 Bits 31:0 = Sector map configuration detection command address = 00_00_00_02h: address of CR1NV 00h 5Bh JEDEC Sector Map Parameter Dword-5 Config. Detect-3 Description 00h 00h 00h 00h Bits 31:24 = RFU = FFh Bits 23:16 = Region count (Dwords -1) = 02h: Three regions Bits 15:8 = Configuration ID = 00h: 4KB sectors at bottom with remainder 64KB sectors Bits 7:2 = RFU = 111111b Bit 1 = Map Descriptor = 1 Bit 0 = not the end descriptor = 0 Bits 31:8 = Region size = 00007Fh: Region size as count-1 of 256 Byte units = 8 x 4KB sectors = 32KB Count = 32KB/256 = 128, value = count -1 = 128 -1 = 127 = 7Fh Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1 Bit 3 = Erase Type 4 support = 0b --- Erase Type 4 is not defined Bit 2 = Erase Type 3 support = 0b --- Erase Type 3 is 256KB erase and is not supported in the 4KB sector region Bit 1 = Erase Type 2 support = 0b --- Erase Type 2 is 64KB erase and is not supported in the 4KB sector region Bit 0 = Erase Type 1 support = 1b --- Erase Type 1 is 4KB erase and is supported in the 4KB sector region Bits 31:8 = Region size = 00007Fh: Region size as count-1 of 256 Byte units = 1 x 32KB sectors = 32KB Count = 32KB/256 = 128, value = count -1 = 128 -1 = 127 = 7Fh Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1 Bit 3 = Erase Type 4 support = 0b --- Erase Type 4 is not defined Bit 2 = Erase Type 3 support = 0b --- Erase Type 3 is 256KB erase and is not supported in the 32KB sector region Bit 1 = Erase Type 2 support = 1b --- Erase Type 2 is 64KB erase and is supported in the 32KB sector region Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not supported in the 32KB sector region Page 138 of 147 PRELIMINARY S25FS064S Table 13.17 CFI and SFDP Section 2, Sector Map Parameter Table (Continued) CFI Parameter Relative Byte Address Offset SFDP Parameter Relative Byte Address Offset 6Eh 6Ch 6Fh 6Dh FFh 70h 6Eh 7Eh (64 Mb) 71h 6Fh 72h 70h 73h 71h 74h 72h 75h 73h SFDP Dword Name Data F2h JEDEC Sector Map Parameter Dword-10 Config-0 Region-2 JEDEC Sector Map Parameter Dword-11 Config-2 Header 00h FEh 02h 02h FFh 76h 74h F2h 77h 75h FFh 78h 76h 79h 77h 7Eh (64 Mb) JEDEC Sector Map Parameter Dword-12 Config-2 Region-0 00h 7Ah 78h F2h 7Bh 79h 7Fh 7Ch 7Ah 7Dh 7Bh 7Eh 7C F1h 7Fh 7D 7Fh 80h 7E 81h 7F 82h 80h 83h 81h 84h 82h 85h 83h JEDEC Sector Map Parameter Dword-13 Config-2 Region-1 JEDEC Sector Map Parameter Dword-14 Config-2 Region-2 JEDEC Sector Map Parameter Dword-15 Config-1 Header Document Number: 002-03631 Rev. *C 00h 00h 00h 00h FEh 01h 02h FFh Description Bits 31:8 = 64Mb device Region size = 007EFFh: Region size as count-1 of 256 Byte units = 127x 65536B sectors = 8323072B Count = 8323072B/256 = 32512, value = count -1 = 32512-1 = 32511= 7EFFh Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1 Bit 3 = Erase Type 4 support = 0b --- Erase Type 4 is not defined Bit 2 = Erase Type 3 support = 0b --- Erase Type 3 is 256KB erase and is not supported in the 64KB sector region Bit 1 = Erase Type 2 support = 1b --- Erase Type 2 is 64KB erase and is supported in the 64KB sector region Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not supported in the 64KB sector region Bits 31:24 = RFU = FFh Bits 23:16 = Region count (Dwords -1) = 02h: Three regions Bits 15:8 = Configuration ID = 02h: 4KB sectors at top with remainder 64KB sectors Bits 7:2 = RFU = 111111b Bit 1 = Map Descriptor = 1 Bit 0 = not the end descriptor = 0 Bits 31:8 = 64Mb device Region size = 007EFFh: Region size as count-1 of 256 Byte units = 127x 65536B sectors = 8323072B Count = 8323072B/256 = 32512, value = count -1 = 32512-1 = 32511= 7EFFh Bits 7:4 = RFU = Fh Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1 Bit 3 = Erase Type 4 support = 0b --- Erase Type 4 is not defined Bit 2 = Erase Type 3 support = 0b --- Erase Type 3 is 256KB erase and is not supported in the 64KB sector region Bit 1 = Erase Type 2 support = 1b --- Erase Type 2 is 64KB erase and is supported in the 64KB sector region Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not supported in the 64KB sector region Bits 31:8 = Region size = 00007Fh: Region size as count-1 of 256 Byte units = 1 x 32KB sectors = 32KB Count = 32KB/256 = 128, value = count -1 = 128 -1 = 127 = 7Fh Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1 Bit 3 = Erase Type 4 support = 0b --- Erase Type 4 is not defined Bit 2 = Erase Type 3 support = 0b --- Erase Type 3 is 256KB erase and is not supported in the 32KB sector region Bit 1 = Erase Type 2 support = 1b --- Erase Type 2 is 64KB erase and is supported in the 32KB sector region Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not supported in the 32KB sector region Bits 31:8 = Region size = 00007Fh: Region size as count-1 of 256 Byte units = 8 x 4KB sectors = 32KB Count = 32KB/256 = 128, value = count -1 = 128 -1 = 127 = 7Fh Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1 Bit 3 = Erase Type 4 support = 0b --- Erase Type 4 is not defined Bit 2 = Erase Type 3 support = 0b --- Erase Type 3 is 256KB erase and is not supported in the 4KB sector region Bit 1 = Erase Type 2 support = 0b --- Erase Type 2 is 64KB erase and is not supported in the 4KB sector region Bit 0 = Erase Type 1 support = 1b --- Erase Type 1 is 4KB erase and is supported in the 4KB sector region Bits 31:24 = RFU = FFh Bits 23:16 = Region count (Dwords -1) = 02h: Three regions Bits 15:8 = Configuration ID = 01h: 4KB sectors at bottom with remainder 256KB sectors Bits 7:2 = RFU = 111111b Bit 1 = Map Descriptor = 1 Bit 0 = not the end descriptor = 0 Page 139 of 147 PRELIMINARY S25FS064S Table 13.17 CFI and SFDP Section 2, Sector Map Parameter Table (Continued) CFI Parameter Relative Byte Address Offset SFDP Parameter Relative Byte Address Offset 86h 84h F1h 87h 85h 7Fh 88h 86h 89h 87h SFDP Dword Name JEDEC Sector Map Parameter Dword-16 Config-1 Region-0 Data 00h 00h 8Ah 88h F4h 8Bh 89h 7Fh 8Ch 8Ah 8Dh 8Bh 8Eh 8Ch F4h 8Fh 8Dh FFh 90h 8Eh 91h 8F JEDEC Sector Map Parameter Dword-17 Config-1 Region-1 JEDEC Sector Map Parameter Dword-18 Config-1 Region-2 JEDEC Sector Map Parameter Dword-19 Config-3 Header 03h 00h 7Bh (64 Mb) 00h 92h 90h 93h 91h 94h 92h 95h 93h 96h 94h 97h 95h FFh 98h 96h 7Bh (64 Mb) 99h 97h FEh 03h 02h FFh F4h JEDEC Sector Map Parameter Dword-20 Config-3 Region-0 Document Number: 002-03631 Rev. *C 00h Description Bits 31:8 = Region size = 00007Fh: Region size as count-1 of 256 Byte units = 8 x 4KB sectors = 32KB Count = 32KB/256 = 128, value = count -1 = 128 -1 = 127 = 7Fh Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1 Bit 3 = Erase Type 4 support = 0b --- Erase Type 4 is not defined Bit 2 = Erase Type 3 support = 0b --- Erase Type 3 is 256KB erase and is supported in the 4KB sector region Bit 1 = Erase Type 2 support = 0b --- Erase Type 2 is 64KB erase and is not supported in the 4KB sector region Bit 0 = Erase Type 1 support = 1b --- Erase Type 1 is 4KB erase and is supported in the 4KB sector region Bits 31:8 = Region size = 00037Fh: Region size as count-1 of 256 Byte units = 1 x 224KB sectors = 224KB Count = 224KB/256 = 896, value = count -1 = 896 -1 = 895 = 37Fh Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1 Bit 3 = Erase Type 4 support = 0b --- Erase Type 4 is not defined Bit 2 = Erase Type 3 support = 1b --- Erase Type 3 is 256KB erase and is supported in the 224KB sector region Bit 1 = Erase Type 2 support = 0b --- Erase Type 2 is 64KB erase and is not supported in the 224KB sector region Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not supported in the 224KB sector region Bits 31:8 = 64 Mb device Region size = 007BFFh: Region size as count-1 of 256 Byte units = 31 x 262144B sectors = 8126464B Count = 8126464B/256 = 31744, value = count -1 = 31744-1 = 31743= 7BFFh Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1 Bit 3 = Erase Type 4 support = 0b --- Erase Type 4 is not defined Bit 2 = Erase Type 3 support = 1b --- Erase Type 3 is 256KB erase and is supported in the 256KB sector region Bit 1 = Erase Type 2 support = 0b --- Erase Type 2 is 64KB erase and is not supported in the 256KB sector region Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not supported in the 256KB sector region Bits 31:24 = RFU = FFh Bits 23:16 = Region count (Dwords -1) = 02h: Three regions Bits 15:8 = Configuration ID = 03h: 4KB sectors at top with remainder 256KB sectors Bits 7:2 = RFU = 111111b Bit 1 = Map Descriptor = 1 Bit 0 = not the end descriptor = 0 Bits 31:8 = 64 Mb device Region size = 007BFFh: Region size as count-1 of 256 Byte units = 31 x 262144B sectors = 8126464B Count = 8126464B/256 = 31744, value = count -1 = 31744-1 = 31743= 7BFFh Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1 Bit 3 = Erase Type 4 support = 0b --- Erase Type 4 is not defined Bit 2 = Erase Type 3 support = 1b --- Erase Type 3 is 256KB erase and is supported in the 256KB sector region Bit 1 = Erase Type 2 support = 0b --- Erase Type 2 is 64KB erase and is not supported in the 256KB sector region Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not supported in the 256KB sector region Page 140 of 147 PRELIMINARY S25FS064S Table 13.17 CFI and SFDP Section 2, Sector Map Parameter Table (Continued) CFI Parameter Relative Byte Address Offset SFDP Parameter Relative Byte Address Offset 9Ah 98h F4h 7Fh SFDP Dword Name Data 9Bh 99h 9Ch 9Ah 9Dh 9Bh 9Eh 9Ch F1h 9Fh 9Dh 7Fh A0h 9Eh A1h 9Fh A2h A0h A3h A1h A4h A2h A5h A3h JEDEC Sector Map Parameter Dword-21 Config-3 Region-1 JEDEC Sector Map Parameter Dword-22 Config-3 Region-2 JEDEC Sector Map Parameter Dword-23 Config-4 Header 03h 00h 00h 00h FEh 04h 00h FFh A6h A4h F2h A7h A5h FFh A8h A6h A9h A7h AAh A8h ABh A9h ACh AAh JEDEC Sector Map Parameter Dword-24 Config-4 Region-0 JEDEC Sector Map Parameter Dword-25 Config-5 Header 7Fh (64 Mb) 00h FFh 05h 00h ADh ABh AEh ACh FFh AFh ADh FFh B0h AEh 7Fh (64 Mb) B1h AFh F4h JEDEC Sector Map Parameter Dword-26 Config-5 Region-0 Document Number: 002-03631 Rev. *C 00h Description Bits 31:8 = Region size = 00037Fh: Region size as count-1 of 256 Byte units = 1 x 224KB sectors = 224KB Count = 224KB/256 = 896, value = count -1 = 896 -1 = 895 = 37Fh Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1 Bit 3 = Erase Type 4 support = 0b --- Erase Type 4 is not defined Bit 2 = Erase Type 3 support = 1b --- Erase Type 3 is 256KB erase and is supported in the 224KB sector region Bit 1 = Erase Type 2 support = 0b --- Erase Type 2 is 64KB erase and is not supported in the 224KB sector region Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not supported in the 224KB sector region Bits 31:8 = Region size = 00007Fh: Region size as count-1 of 256 Byte units = 8 x 4KB sectors = 32KB Count = 32KB/256 = 128, value = count -1 = 128 -1 = 127 = 7Fh Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1 Bit 3 = Erase Type 4 support = 0b --- Erase Type 4 is not defined Bit 2 = Erase Type 3 support = 0b --- Erase Type 3 is 256KB erase and is not supported in the 4KB sector region Bit 1 = Erase Type 2 support = 0b --- Erase Type 2 is 64KB erase and is not supported in the 4KB sector region Bit 0 = Erase Type 1 support = 1b --- Erase Type 1 is 4KB erase and is supported in the 4KB sector region Bits 31:24 = RFU = FFh Bits 23:16 = Region count (Dwords -1) = 00h: One region Bits 15:8 = Configuration ID = 04h: Uniform 64KB sectors Bits 7:2 = RFU = 111111b Bit 1 = Map Descriptor = 1 Bit 0 = not the end descriptor = 0 Bits 31:8 = 64 Mb device Region size = 007FFBh: Region size as count-1 of 256 Byte units = 128 x 65536B sectors = 8388608B Count = 8388608B/256 = 32768, value = count -1 = 32768-1 = 32767= 7FFFh Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1 Bit 3 = Erase Type 4 support = 0b --- Erase Type 4 is not defined Bit 2 = Erase Type 3 support = 0b --- Erase Type 3 is 256KB erase and is not supported in the 64KB sector region Bit 1 = Erase Type 2 support = 1b --- Erase Type 2 is 64KB erase and is supported in the 64KB sector region Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not supported in the 64KB sector region Bits 31:24 = RFU = FFh Bits 23:16 = Region count (Dwords -1) = 00h: One region Bits 15:8 = Configuration ID = 05h: Uniform 256KB sectors Bits 7:2 = RFU = 111111b Bit 1 = Map Descriptor = 1 Bit 0 = The end descriptor = 1 Bits 31:8 = 64 Mb device Region size = 01FFFFh: Region size as count-1 of 256 Byte units = 32 x 262144B sectors = 8388608B Count = 8388608B/256 = 32768,value = count -1 = 32768-1 = 32767= 7FFFh Bits 7:4 = RFU = Fh Erase Type not supported = 0/ supported = 1 Bit 3 = Erase Type 4 support = 0b --- Erase Type 4 is not defined Bit 2 = Erase Type 3 support = 1b --- Erase Type 3 is 256KB erase and is supported in the 256KB sector region Bit 1 = Erase Type 2 support = 0b --- Erase Type 2 is 64KB erase and is not supported in the 256KB sector region Bit 0 = Erase Type 1 support = 0b --- Erase Type 1 is 4KB erase and is not supported in the 256KB sector region Page 141 of 147 PRELIMINARY 13.4 S25FS064S Initial Delivery State The device is shipped from Cypress with non-volatile bits set as follows: The entire memory array is erased: i.e. all bits are set to 1 (each byte contains FFh). The OTP address space has the first 16 bytes programmed to a random number. All other bytes are erased to FFh. The SFDP address space contains the values as defined in the description of the SFDP address space. The ID-CFI address space contains the values as defined in the description of the ID-CFI address space. The RUID address space contains the 64bit Unique Id number. The Status Register 1 Non-volatile contains 00h (all SR1NV bits are cleared to 0's). The Configuration Register 1 Non-volatile contains 00h. The Configuration Register 2 Non-volatile contains 00h. The Configuration Register 3 Non-volatile contains 00h. The Configuration Register 4 Non-volatile contains 10h. The Password Register contains FFFFFFFF-FFFFFFFFh. All PPB bits are "1". The ASP Register bits are FFFFh. Document Number: 002-03631 Rev. *C Page 142 of 147 PRELIMINARY S25FS064S 14. Ordering Part Number The ordering part number is formed by a valid combination of the following: S25FS 064 S AG M F I 00 1 Packing Type 0 = Tray 1 = Tube 3 = 13" Tape and Reel Model Number (Additional Ordering Options) 01 = SOIC8 footprint 02 = 5x5 ball BGA footprint FAB 03 = LGA footprint Temperature Range I = Industrial (-40C to +85C) V = Industrial Plus (-40C to +105C) N = Extended (-40C to +125C) Package Materials F = Lead (Pb)-free H = Low-Halogen, Lead (Pb)-free Package Type M = 8-Lead SOIC N = 8-contact LGA B = 24-ball BGA 6 x 8 mm package, 1.00 mm pitch Speed AG = 133 MHz DS = 80 MHz DDR Device Technology S = 0.065 m MirrorBit Process Technology Density 064= 64 Mbit Device Family S25FS Cypress 1.8 Volt-only, Serial Peripheral Interface (SPI) Flash Memory Valid Combinations -- Standard Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm availability of specific valid combinations and to check on newly released combinations. Table 14.1 S25FS064S Valid Combinations -- Standard Valid Combinations Base Ordering Part Number Speed Option AG S25FS064S DS Package and Temperature Model Number Packing Type Package Marking MFI, MFV, MFN 01 0, 1, 3 FS064S + A + (Temp) + F + 1 NFI, NFV, NFN 03 0, 1, 3 FS064S + A + (Temp) + F + 3 BHI, BHV, BHN 02 0, 3 FS064S + A + (Temp) + H + 2 MFI, MFV, MFN 01 0, 1, 3 FS064S + D + (Temp) + F + 1 NFI, NFV, NFN 03 0, 1, 3 FS064S + D + (Temp) + F + 3 BHI, BHV, BHN 02 0, 3 FS064S + D + (Temp) + H + 2 Document Number: 002-03631 Rev. *C Page 143 of 147 PRELIMINARY S25FS064S 15. Glossary BCD = Binary Coded Decimal. A value in which each 4 bit nibble represents a decimal numeral. Command = All information transferred between the host system and memory during one period while CS# is low. This includes the instruction (sometimes called an operation code or opcode) and any required address, mode bits, latency cycles, or data. DDP = Dual Die Package = Two die stacked within the same package to increase the memory capacity of a single package. Often also referred to as a Multi-Chip Package (MCP) DDR = Double Data Rate = When input and output are latched on every edge of SCK. ECC Unit = 16 byte aligned and length data groups in the main Flash array and OTP array, each of which has its own hidden ECC to enable error correction on each group. Flash = the name for a type of Electrical Erase Programmable Read Only Memory (EEPROM) that erases large blocks of memory bits in parallel, making the erase operation much faster than early EEPROM. High = a signal voltage level VIH or a logic level representing a binary one ("1"). Instruction = the 8 bit code indicating the function to be performed by a command (sometimes called an operation code or opcode). The instruction is always the first 8 bits transferred from host system to the memory in any command. Low = a signal voltage level VIL or a logic level representing a binary zero ("0"). LSB = Least Significant Bit = Generally the right most bit, with the lowest order of magnitude value, within a group of bits of a register or data value. MSB = Most Significant Bit = Generally the left most bit, with the highest order of magnitude value, within a group of bits of a register or data value. N/A = Not Applicable. A value is not relevant to situation described. Non-Volatile = no power is needed to maintain data stored in the memory. OPN = Ordering Part Number = The alphanumeric string specifying the memory device type, density, package, factory nonvolatile configuration, etc. used to select the desired device. Page = 512 Byte or 256 Byte aligned and length group of data. PCB - Printed Circuit Board Register Bit References = are in the format: Register_name[bit_number] or Register_name[bit_range_MSB: bit_range_LSB] SDR = Single Data Rate = When input is latched on the rising edge and output on the falling edge of SCK. Sector = erase unit size; depending on device model and sector location this may be 4KBytes, 64KBytes or 256KBytes Write = an operation that changes data within volatile or non-volatile registers bits or non-volatile Flash memory. When changing non-volatile data, an erase and reprogramming of any unchanged non-volatile data is done, as part of the operation, such that the non-volatile data is modified by the write operation, in the same way that volatile data is modified - as a single operation. The nonvolatile data appears to the host system to be updated by the single write command, without the need for separate commands for erase and reprogram of adjacent, but unaffected data. Document Number: 002-03631 Rev. *C Page 144 of 147 PRELIMINARY S25FS064S 16. Document History Page Document Title: S25FS064S, 64 Mbit (8 Mbyte), 1.8-V FS-S Flash Document Number: 002-03631 Rev. ECN No. Orig. of Change Submission Date ** 4905590 BWHA 10/05/2015 Initial release 01/29/2016 Updated Table 1.1: Updated details in both "FS-S" columns corresponding to "Auto Boot Mode" and "Updated Table 4.1: Updated details in "SO / IO1" column corresponding to "Power-Off" Interface State. Updated details in "IO3_RESET#" column corresponding to "Interface Standby" Interface State. Updated Table 5.4: Referred Note (2) in description of ICC1 parameter. Updated Table 5.5: Changed maximum value of IDPD parameter from 60 A to 80 A. Updated Table 5.6: Changed maximum value of IDPD parameter from 100 A to 150 A. Updated Embedded Algorithm Performance Tables: Changed maximum value of tPP parameter from 1080 s to 2000 s. Updated Table 7.2: "Comments" column corresponding to tRS parameter. Updated Address Space Maps: Updated Configuration Register 1: Table 9.13 and Table 9.14: Updated Configuration Register 2 Non-volatile (CR2NV): Table 9.16: Updated Configuration Register 3: Table 9.19: Updated ASP Register (ASPR): Table 9.24: Updated Register Access Commands: Write VDLR (WVDLR 4Ah): Updated Table 12.1: "Typical" with "Minimum" in column heading. Updated Table 13.9: Details in "Data" column corresponding to "69h" Parameter Relative Byte Address Offset. Updated Table 13.10: Details in "Data" column corresponding to "6Ch" Parameter Relative Byte Address Offset. Updated Table 13.11: Details in "Data" column corresponding to "76h" Parameter Relative Byte Address Offset. Updated Table 13.13: Details in "Data" column corresponding to "7Ch" Parameter Relative Byte Address Offset. Updated Table 13.14: Details in "Parameter Relative Byte Address Offset" and "Data" columns. 02/23/2016 Updated description for "Dual or Quad I/O Read commands" and "Quad Double Data Rate read commands" in Read Flash Array. Updated Maximum value of IDPD in Table 5.4 through Table 5.6. Updated tRPH Time in Table 6.3. Updated Sales page with latest copyright disclaimer and links. *A *B 5090169 5149633 RHLU/ BWHA RHLU Document Number: 002-03631 Rev. *C Description of Change Page 145 of 147 PRELIMINARY S25FS064S Document Title: S25FS064S, 64 Mbit (8 Mbyte), 1.8-V FS-S Flash Document Number: 002-03631 Rev. *C ECN No. 5311335 Orig. of Change BWHA Submission Date Description of Change 06/24/2016 Updated Table 5.3: changed Min value for VDD (cut-off). Addition of LGA Package, Figure 8.1 and Section 8.2.2. Removed "Table Program and Erase Performance Extended Temperature. Updated Table 7.1 Program and Erase Performance inclusive of all temperature ranges, Changing typical timing parameter tW and tSE (64KB or 4KB sectors) to 240ms, tSE (256KB sectors) to 960ms, tBE to 30s. Updated Table 13.15 Header, change SFDP data Address 24h to "B1h", Address 25h to "72h", Address 26h to "1Dh", Address 28h to "82h", Address 2Bh to "C7". Updated Table 6.3 tRPH time from 45 s to 35 s. Addition of ECC feature description Section 11.5.1.1. Addition of Register Descriptions Table 9.9. Updated Data Integrity Section 12. Updated Power On Reset Section 6.3.1. Added Thermal Resistance Section 5.3. Added Link to Cypress Flash Roadmap Section 1.3.1. Updated CY Logo and Disclaimer. Document Number: 002-03631 Rev. *C Page 146 of 147 PRELIMINARY S25FS064S Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer's representatives, and distributors. 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Document Number: 002-03631 Rev. *C Revised June 24, 2016 Page 147 of 147