G2RV-SR700-AP AC/DC24 - OMRON - Datasheet.Directory

2011-06-01

Rev 2.5 Page 1

BSS 84 P

SIPMOS Small-Signal-Transistor Product Summary

VDS -60 V

RDS(on) 8

W

ID-0.17 A

Feature

·

P-Channel

·

Enhancement mode

·

Logic Level

·

Avalanche rated

·

dv/dt rated

PG-SOT-23

1

2

3

VPS05161

Gate

pin1

Drain

pin 3

Source

pin 2

Marking

YBs

Type Package Tape and Reel

BSS 84 P PG-SOT-23 L6327:3000pcs/r.

Maximum Ratings, at

TA

= 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

T

A

=25°C

T

A

=70°C

I

D

-0.17

-0.14

A

Pulsed drain current

T

A

=25°C

I

D puls

-0.68

Avalanche energy, single pulse

I

D

=-0.17 A , V

DD

=-25V, R

GS

=25

W

E

AS

2.6 mJ

Avalanche energy, periodic limited by T

jmax

E

AR

0.036

Reverse diode dv/dt

IS=-0.17A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C

dv/dt-6 kV/µs

Gate source voltage V

GS

±20 V

Power dissipation

TA=25°C

P

tot

0.36 W

Operating and storage temperature T

j

,

T

stg

-55... +150 °C

IEC climatic category; DIN IEC 68-1

55/150/56

BSS 84 P PG-SOT-23 L6433:10000pcs/r.

YBs

2011-06-01

Rev 2.5 Page 2

BSS 84 P

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point

(Pin 3) RthJS - - 200 K/W

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

RthJA

-

350

300

Electrical Characteristics, at TA = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=-250µA

V(BR)DSS -60 - - V

Gate threshold voltage, VGS = VDS

ID=-20µA

VGS(th) -1 -1.5 -2

Zero gate voltage drain current

VDS=-60V, VGS=0, TA=25°C

VDS=-60V, VGS=0, TA=125°C

IDSS

-

-0.1

-10

-1

-100

µA

Gate-source leakage current

VGS=-20V, VDS=0

IGSS - -10 -100 nA

Drain-source on-state resistance

VGS=-4.5V, ID=-0.14A

RDS(on) - 8 12

W

Drain-source on-state resistance

VGS=-10V, ID=-0.17A

RDS(on) - 5.8 8

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

2011-06-01

Rev 2.5 Page 3

BSS 84 P

Electrical Characteristics, at TA = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance gfs VDS

£

2*ID*RDS(on)max ,

ID=-0.14A

0.065 0.13 - S

Input capacitance Ciss VGS=0, VDS=-25V,

f=1MHz

- 15 19 pF

Output capacitance Coss - 6 8

Reverse transfer capacitance Crss - 2 3

Turn-on delay time td(on) VDD=-30V, VGS=-4.5V,

ID=-0.14A, RG=25

W

- 6.7 10 ns

Rise time tr- 16.2 24.3

Turn-off delay time td(off) - 8.6 12.9

Fall time tf- 20.5 30.8

Gate Charge Characteristics

Gate to source charge Qgs VDD=-48V, ID=-0.17A - 0.25 0.37 nC

Gate to drain charge Qgd - 0.3 0.45

Gate charge total QgVDD=-48V, ID=-0.17A,

VGS=0 to -10V

- 1 1.5

Gate plateau voltage V(plateau) VDD=-48V, ID=-0.17A - -3.42 - V

Reverse Diode

Inverse diode continuous

forward current ISTA=25°C - - -0.17 A

Inv. diode direct current, pulsedISM - - -0.68

Inverse diode forward voltage VSD VGS=0, IF=-0.17A - -0.93 -1.24 V

Reverse recovery time trr VR=-30V, IF=lS,

diF/dt=100A/µs

- 23 34 ns

Reverse recovery charge Qrr - 10 15 nC

2011-06-01

Rev 2.5 Page 4

BSS 84 P

1 Power dissipation

Ptot = f (TA)

0 20 40 60 80 100 120 °C 160

TA

0

0.04

0.08

0.12

0.16

0.2

0.24

0.28

0.32

W

0.38 BSS 84 P

P

tot

2 Drain current

ID = f (TA)

parameter: VGS

³

10 V

0 20 40 60 80 100 120 °C 160

TA

0

-0.02

-0.04

-0.06

-0.08

-0.1

-0.12

-0.14

A

-0.18 BSS 84 P

I

D

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TA = 25 °C

-10 -1 -10 0 -10 1 -10 2

VVDS

-3

-10

-2

-10

-1

-10

0

-10

1

-10

A

BSS 84 P

I

D

R

DS(on)

= V

DS

/ I

D

DC

10 ms

1 ms

tp = 170.0µs

4 Transient thermal impedance

ZthJA = f (tp)

parameter : D = tp/T

10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4

s

tp

-1

10

0

10

1

10

2

10

3

10

K/W

BSS 84 P

Z

thJA

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

2011-06-01

Rev 2.5 Page 5

BSS 84 P

5 Typ. output characteristic

ID = f (VDS)

parameter: Tj = 25 °C

0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 V-5

VDS

0

-0.04

-0.08

-0.12

-0.16

-0.2

-0.24

-0.28

-0.32

A

-0.4 BSS 84 P

I

D

VGS [V]

a

a -2.5

b

b -3.0

c

c -3.5

d

d -4.0

ee -4.5

f

f -5.0

g

g -5.5

h

h -6.0

i

i -6.5

j

j -7.0

k

k -8.0

l

Ptot = 0.36W

l -10.0

6 Typ. drain-source on resistance

RDS(on) = f (ID)

parameter: VGS; Tj = 25 °C

0 -0.04-0.08-0.12-0.16 -0.2 -0.24-0.28-0.32A-0.38

ID

0

2

4

6

8

10

12

14

16

18

20

22

W

26 BSS 84 P

R

DS(on)

VGS [V] =

a

-2.5

b

-3.0

c

-3.5

d

-4.0

e

-4.5

f

-5.0

g

-5.5

h

-6.0

i

-6.5

j

-7.0

k

-8.0

l

-10.0

7 Typ. transfer characteristics

ID= f ( VGS ); |VDS|

³

2 x |ID| x RDS(on)max

parameter: Tj = 25 °C

01234V6

- VGS

0

0.05

0.1

0.15

0.2

0.25

0.3

A

0.4

- ID

8 Typ. forward transconductance

gfs = f(ID)

parameter: Tj = 25 °C

0 0.04 0.08 0.12 0.16 A0.22

-ID

0

0.02

0.04

0.06

0.08

0.1

0.12

S

0.16

gfs

2011-06-01

Rev 2.5 Page 6

BSS 84 P

9 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = -0.17 A, VGS = -10 V

-60 -20 20 60 100 °C 180

TA

0

2

4

6

8

10

12

14

16

18

W

21 BSS 84 P

R

DS(on)

typ

98%

10 Typ. gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS

-60 -20 20 60 100 °C 160

TA

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

V

2.4

- VGS(th)

2%

typ.

98%

11 Typ. capacitances

C = f (VDS)

parameter: VGS=0, f=1 MHz

0 5 10 V20

- VDS

0

10

1

10

2

10

pF

C

Crss

Coss

Ciss

12 Forward character. of reverse diode

IF = f (VSD)

parameter: Tj , tp = 80 µs

0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V-3

VSD

-3

-10

-2

-10

-1

-10

0

-10

A

BSS 84 P

I

F

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)

2011-06-01

Rev 2.5 Page 7

BSS 84 P

13 Typ. avalanche energy

EAS = f (TA), parameter:

ID = -0.17 A , VDD = -25 V, RGS = 25

W

25 45 65 85 105 125 °C 165

TA

0

0.5

1

1.5

2

mJ

3

EAS

14 Typ. gate charge

VGS = f (QGate)

parameter: ID = -0.17 A pulsed; Tj = 25 °C

0 0.2 0.4 0.6 0.8 1 1.2 nC 1.5

QGate

0

-2

-4

-6

-8

-10

-12

V

-16 BSS 84 P

V

GS

0,8 VDS max

DS max

V

0,2

15 Drain-source breakdown voltage

V(BR)DSS = f (TA)

-60 -20 20 60 100 °C 180

TA

-54

-56

-58

-60

-62

-64

-66

-68

V

-72 BSS 84 P

V

(BR)DSS

2011-06-01

Rev 2.5 Page 8

BSS 84 P

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,

regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device

or system Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.