2007. 12. 27 1/2
SEMICONDUCTOR
TECHNICAL DATA
PF1007UDF16
EMI Filtering TVS
Revision No : 0
EMI Filtering TVS For Data Line
FEATURES
EMI/RFI filtering.
ESD Protection to IEC 61000-4-2 Level 4.
Low insertion loss.
Good attenuation of high frequency signals.
Low clamping voltage.
Low operating and leakage current.
Eight elements in one package
MAXIMUM RATING (Ta=25 )
1,16 : Filter channel 1
2,15 : Filter channel 2
3,14 : Filter channel 3
4,13 : Filter channel 4
5,12 : Filter channel 5
6,11 : Filter channel 6
7,10 : Filter channel 7
8,9 : Filter channel 8
UDFN-16
MILLIMETERSDIM
3.50
2.80 0.10
+
_
J
TOP VIEW
SIDE VIEW
BOTTOM VIEW
A
C
H
G
K
L
J
D
E
F
A
B1.20
0.40
0.125
0.03+0.02/-0.03
0.20 Min
0.50 0.05
+
_
0.30 0.10
+
_
0.20 0.05
+
_
0.25 0.05
+
_
GND PAD
C
G
H
D
E
18
16 9
Pin 1
F
B
L
K
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
DC Power Per Resistor PR100
mW
Power Dissipation *PD800
Junction Temperature Tj150
Storage Temperature Tstg -55 150
7.5pF 7.5pF
100Ω
FILTERn* FILTERn*
GND
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Stand-Off Voltage VRWM - - - 5 V
Reverse Breakdown Voltage VBR It=1mA 6 - - V
Reverse Leakage Current IRVRWM=3.3V - - 1 A
Cutoff Frequency f3dB VR=0V, ZSOURCE=50 , ZLOAD=50 - 200 - MHz
Resistance R Between Input and Output - 100 -
Capacitance C2.5V VR=2.5V, Between I/O Pins and GND - 15 - pF
EQUIVALENT CIRCUIT
* Total Package Power Dissipation
Type Name
Lot No.
T9
A0
MARKING
2007. 12. 27 2/2
PF1007UDF16
Revision No : 0
REVERSE VOLTAGE VR (V)
10
100
1
0.1
012345
REVERSE LEAKAGE CURRENT IR (nA)
REVERSE VOLTAGE VR (V)
0.5
1.5
2.0
0.0
012345
1.0
NORMALIZED CAPACITANCE
CJ - VR
IR - VR
S21 - F
FREQUENCY (MHz)
-20
0
-40
1 10 100 1000 6000
-30
-10
INSERTION LOSS (dB)
