ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
DRM
= 5600
V
VDSM = 6500 V
IT
(
AV
)
M= 350 A
IT
(
RMS
)
= 550 A
ITSM =4.5×10
3A
V
(
T0
)
=1.2 V
rT=2.3 mΩ
ΩΩ
Ω
Phase Control Thyristor
5STP 03X6500
Doc. No. 5SYA1003-04 Okt. 03
•
••
•Patented free-floating silicon technology
•
••
•Low on-state and switching losses
•
••
•Designed for traction, energy and industrial applications
•
••
•Optimum power handling capability
•
••
•Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Symbol Conditions 5STP 03X6500 5STP 03X6200 5STP 03X5800
VDSM, VRSM f = 5 Hz, tp = 10 ms 6500 V 6200 V 5800 V
VDRM, VRRM f = 50 Hz, tp = 10 ms 5600 V 5300 V 4900 V
VRSM tp = 5 ms, single pulse 7000 V 6700 V 6300 V
dV/dtcrit Exp. to 0.67 x VDRM, Tvj = 125°C 1000 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Forward leakage current IDSM VDSM, Tvj = 125°C 150 mA
Reverse leakage current IRSM VRSM, Tvj = 125°C 150 mA
VDRM/ VRRM are equal to VDSM/ VRSM values up to Tvj = 110°C
Mechanical data
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Mounting force FM81012kN
Acceleration a Device unclamped 50 m/s2
Acceleration a Device clamped 100 m/s2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 0.4 kg
Housing thickness H FM = 10 kN, Ta = 25 °C 34.6 35.6 mm
Surface creepage distance DS38 mm
Air strike distance Da21 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
5STP 03X6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1003-04 Okt. 03 page 2 of 6
On-state
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Average on-state current IT(AV)M Half sine wave, Tc = 70°C 350 A
RMS on-state current IT(RMS) 550 A
Peak non-repetitive surge
current
ITSM 4.5×103A
Limiting load integral I2t
tp = 10 ms, Tvj = 125 °C,
VD = VR = 0 V
101×103A2s
Peak non-repetitive surge
current
ITSM 4.85×103A
Limiting load integral I2t
tp = 8.3 ms, Tvj = 125 °C,
VD = VR = 0 V
98×103A2s
Characteristic values
Parameter Symbol Conditions min typ max Unit
On-state voltage VTIT = 1000 A, Tvj = 125 °C 3.5 V
Threshold voltage V(T0) 1.2 V
Slope resistance rT
IT = 300 A - 900 A, Tvj= 125 °C
2.3 mΩ
Holding current IHTvj = 25 °C 80 mA
Tvj = 125 °C 60 mA
Latching current ILTvj = 25 °C 500 mA
Tvj = 125 °C 200 mA
Switching
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Critical rate of rise of on-
state current
di/dtcrit Cont.
f = 50 Hz
100 A/µs
Critical rate of rise of on-
state current
di/dtcrit
Tvj = 125 °C,
ITRM = 1000 A,
VD ≤ 0.67 VDRM,
IFG = A, tr = 0.5 µs
Cont.
f = 1Hz
1000 A/µs
Circuit-commutated turn-off
time
tqTvj = 125°C, ITRM = 1000 A,
VR = 200 V, diT/dt = -1 A/µs,
VD ≤ 0.67⋅VDRM, dvD/dt = 20V/µs
700 µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Recovery charge Qrr Tvj = 125°C, ITRM = A,
VR = 200 V,
diT/dt = -1 A/µs
900 2000 µAs
Gate turn-on delay time tgd VD = 0.4⋅VRM, IFG = 2 A,
tr = 0.5 µs, Tvj = 25 °C
3µs
5STP 03X6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1003-04 Okt. 03 page 3 of 6
Triggering
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Peak forward gate voltage VFGM 12 V
Peak forward gate current IFGM 10 A
Peak reverse gate voltage VRGM 10 V
Average gate power loss PG(AV) see Fig. 9
Characteristic values
Parameter Symbol Conditions min typ max Unit
Gate-trigger voltage VGT Tvj = 25 °C 2.6 V
Gate-trigger current IGT Tvj = 25 °C 400 mA
Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvj = 125 °C 0.3 V
Gate non-trigger current IGD VD = 0.4 x VDRM, Tvj = 125°C 10 mA
Thermal
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Operating junction
temperature range
Tvj 125 °C
Storage temperature range Tstg -40 140 °C
Characteristic values
Parameter Symbol Conditions min typ max Unit
Thermal resistance junction
to case
Rth(j-c) Double-side cooled 45 K/kW
Rth(j-c)A Anode-side cooled 85 K/kW
Rth(j-c)C Cathode-side cooled 95 K/kW
Thermal resistance case to
heatsink
Rth(c-h) Double-side cooled 7.5 K/kW
Rth(c-h) Single-side cooled 15 K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
n
1i
t/-
ic)-th(j i
å
=
τ
i1 234
Ri(K/kW) 26.070 12.160 3.370 3.100
τi(s) 0.6439 0.0812 0.0161 0.0075
Fig. 1 Transient thermal impedance junction-to case.
5STP 03X6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1003-04 Okt. 03 page 4 of 6
Fig. 2 Max. on-state voltage characteristics Fig. 3 On-state characteristics.
Tj=125°C, 10ms half sine
Fig. 4 On-state power dissipation vs. mean on-state
current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs. mean
on-state current.
5STP 03X6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1003-04 Okt. 03 page 5 of 6
Fig. 6 Surge on-state current vs. pulse length. Half-
sine wave.
Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
IGM
IGon
100 %
90 %
10 %
IGM ≈ 2..5 A
IGon ≥ 1.5 IGT
diG/dt ≥ 2 A/µs
tr≤ 1 µs
tp(IGM)≈ 5...20 µs
diG/dt
tr
tp (IGM)
IG (t)
t
tp (IGon)
Fig. 8 Recommended gate current waveform. Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state
current.
Fig. 11 Peak reverse recovery current vs. decay rate
of on-state current.
5STP 03X6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1003-04 Okt. 03
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
C
C
Fig. 12 Device Outline Drawing.
