VDRM VDSM IT(AV)M IT(RMS) ITSM V(T0) rT = = = = = = = 5600 6500 350 550 4.5x103 1.2 2.3 V V A A A V m Phase Control Thyristor 5STP 03X6500 Doc. No. 5SYA1003-04 Okt. 03 * Patented free-floating silicon technology * Low on-state and switching losses * Designed for traction, energy and industrial applications * Optimum power handling capability * Interdigitated amplifying gate Blocking Maximum rated values 1) Symbol Conditions 5STP 03X6500 5STP 03X6200 5STP 03X5800 VDSM, VRSM f = 5 Hz, tp = 10 ms 6500 V 6200 V 5800 V VDRM, VRRM f = 50 Hz, tp = 10 ms 5600 V 5300 V 4900 V VRSM tp = 5 ms, single pulse 7000 V 6700 V 6300 V dV/dtcrit Exp. to 0.67 x VDRM, Tvj = 125C 1000 V/s Characteristic values Parameter Symbol Conditions min typ max Unit Forward leakage current IDSM VDSM, Tvj = 125C 150 mA Reverse leakage current IRSM VRSM, Tvj = 125C 150 mA VDRM/ VRRM are equal to VDSM/ VRSM values up to Tvj = 110C Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force FM Acceleration a Acceleration a min typ 8 10 max Unit 12 kN Device unclamped 50 m/s 2 Device clamped 100 m/s 2 Characteristic values Parameter Symbol Conditions Weight m Housing thickness H Surface creepage distance DS FM = 10 kN, Ta = 25 C min typ 34.6 38 Air strike distance Da 21 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max Unit 0.4 kg 35.6 mm mm mm 5STP 03X6500 On-state Maximum rated values 1) Parameter Symbol Conditions Average on-state current IT(AV)M RMS on-state current IT(RMS) Peak non-repetitive surge current ITSM Limiting load integral I2t Peak non-repetitive surge current ITSM Limiting load integral I2t min typ Half sine wave, Tc = 70C max Unit 350 A 550 tp = 10 ms, Tvj = 125 C, A 3 A 3 A2s 3 A 4.5x10 VD = VR = 0 V 101x10 tp = 8.3 ms, Tvj = 125 C, 4.85x10 VD = VR = 0 V 3 98x10 A2s Characteristic values Parameter Symbol Conditions On-state voltage VT IT = 1000 A, Tvj = 125 C 3.5 V Threshold voltage V(T0) IT = 300 A - 900 A, Tvj= 125 C 1.2 V Slope resistance rT 2.3 m Holding current IH Tvj = 25 C 80 mA Tvj = 125 C 60 mA Tvj = 25 C 500 mA Tvj = 125 C 200 mA Latching current Switching Maximum rated values IL min typ max Unit 1) Parameter Symbol Conditions Critical rate of rise of onstate current di/dtcrit Critical rate of rise of onstate current di/dtcrit Circuit-commutated turn-off tq time min Tvj = 125 C, Cont. ITRM = 1000 A, f = 50 Hz VD 0.67 VDRM, Cont. IFG = A, tr = 0.5 s f = 1Hz Tvj = 125C, ITRM = 1000 A, VR = 200 V, diT/dt = -1 A/s, VD 0.67VDRM, dvD/dt = 20V/s typ max Unit 100 A/s 1000 A/s 700 s Characteristic values Parameter Symbol Conditions Recovery charge Qrr Tvj = 125C, ITRM = A, VR = 200 V, diT/dt = -1 A/s Gate turn-on delay time tgd VD = 0.4VRM, IFG = 2 A, tr = 0.5 s, Tvj = 25 C min typ 900 max Unit 2000 As 3 s ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1003-04 Okt. 03 page 2 of 6 5STP 03X6500 Triggering Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Peak forward gate voltage VFGM 12 V Peak forward gate current IFGM 10 A Peak reverse gate voltage VRGM 10 V Average gate power loss PG(AV) see Fig. 9 Characteristic values Parameter Symbol Conditions Gate-trigger voltage VGT Tvj = 25 C 2.6 V Gate-trigger current IGT Tvj = 25 C 400 mA Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvj = 125 C 0.3 V Gate non-trigger current IGD VD = 0.4 x VDRM, Tvj = 125C 10 mA Thermal Maximum rated values min typ max Unit 1) Parameter Symbol Conditions Operating junction temperature range Tvj min Storage temperature range Tstg typ -40 max Unit 125 C 140 C Characteristic values Parameter Symbol Conditions max Unit Double-side cooled 45 K/kW Rth(j-c)A Anode-side cooled 85 K/kW Rth(j-c)C Cathode-side cooled 95 K/kW Double-side cooled 7.5 K/kW Single-side cooled 15 K/kW Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n Zth(j - c)(t) = a Ri(1 - e- t/ i ) i =1 i 1 2 3 4 Ri(K/kW) 26.070 12.160 3.370 3.100 i(s) 0.6439 0.0812 0.0161 0.0075 Fig. 1 Transient thermal impedance junction-to case. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1003-04 Okt. 03 page 3 of 6 5STP 03X6500 Fig. 2 Max. on-state voltage characteristics Fig. 3 On-state characteristics. Tj=125C, 10ms half sine Fig. 4 On-state power dissipation vs. mean on-state current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1003-04 Okt. 03 page 4 of 6 5STP 03X6500 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. 2..5 A 1.5 IGT 2 A/s 1 s 5...20 s diG/dt IGon 10 % tr t tp (IGM) tp (IGon) Fig. 8 Recommended gate current waveform. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1003-04 Okt. 03 page 5 of 6 5STP 03X6500 C C Fig. 12 Device Outline Drawing. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1003-04 Okt. 03