NVHL072N65S3 MOSFET - Power, N-Channel, SUPERFET) III, Automotive, Easy-drive 650 V, 44 A, 72 mW www.onsemi.com Description SuperFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss provide superior switching performance, and with- stand extreme dv/dt rate. Consequently, SuperFET III MOSFET Easy-drive series helps manage EMI issues and allows for easier design implementation. Features * * * * * * * BVDSS RDS(on) MAX ID MAX 650 V 72 m V 44 A D G AEC-Q101 Qualified Max Junction Temperature 150C Typ. RDS(on) = 61 m Ultra Low Gate Charge (Typ. QG = 82 nC) Low Effective Output Capacitance (Typ. COSS(eff.) = 724 pF) 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant S N-Channel MOSFET Typical Applications * Automotive PHEV-BEV DC-DC Converter * Automotive Onboard Charger for PHEV-BEV TO-247-3LD CASE 340CX MARKING DIAGRAM $Y&Z&3&K NVHL 072N65S3 $Y &Z &3 &K NVHL072N65S3 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2018 July, 2019 - Rev. 1 1 Publication Order Number: NVHL072N65S3/D NVHL072N65S3 ABSOLUTE MAXIMUM RATINGS (TC = 25C, Unless otherwise specified) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V DC 30 V AC (f > 1 Hz) 30 V Continuous (TC = 25C) 44 A Continuous (TC = 100C) 28 A IDM Pulsed Drain Current 110 A EAS Single Pulsed Avalanche Energy (Note 2) 214 mJ EAR Repetitive Avalanche (Note 1) 3.12 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 V/ns 312 W PD Pulsed (Note 1) Power Dissipation (TC = 25C) Derate Above 25C TJ,TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 2.5 W/C -55 to +150 C 300 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 4.8 A, RG = 25 , starting TJ = 25C. 3. ISD < 44 A, di/dt 200 A/ms, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature typical characteristics. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RJ C Thermal Resistance, Junction to Case, Max 0.37 C/W RJ A Thermal Resistance, Junction to Ambient, Max 40 C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Shipping (Qty / Packing) NVHL072N65S3 NVHL072N65S3 TO-247-3LD Tube 30 Units / Tube www.onsemi.com 2 NVHL072N65S3 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25C 650 - - V VGS = 0 V, ID = 1 mA, TJ = 150C 700 - - V OFF CHARACTERISTICS BVDSS Drain-to-Source Breakdown Voltage BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25C - 0.60 - V/C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V - 0.30 1 A VDS = 520 V, VGS = 0 V, Tc = 125C - 7.30 - IGSS Gate to Body Leakage Current VGS = 30 V, VDS = 0 V - - 100 nA 2.5 - 4.5 V ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1.0 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 22 A, TJ = 25C - 61 72 m VGS = 10 V, ID = 22 A, TJ = 100C - 107 - m VDS = 20 V, ID = 44 A - 29.7 - S VDS = 400 V, VGS = 0 V, f = 1 MHz - 3300 - pF gFS Forward Transconductance DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance - 72.8 - pF Crss Reverse Transfer Capacitance - 14.6 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 724 - pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 104 - pF Total Gate Charge VDS = 400 V, VGS = 10 V, ID = 44 A (Note 4) - 82.0 - nC - 23.3 - nC - 34.0 - nC f = 1 MHz - 0.685 - m VDD = 400 V, ID = 44 A, VGS = 10 V, RG = 4.7 (Note 4) - 26.3 - ns Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge RG Gate Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time - 50 - ns td(off) Turn-Off Delay Time - 65.9 - ns Fall Time - 32 - ns Maximum Continuous Drain to Source Diode Forward Current - - 44 A ISM Maximum Plused Drain to Source Diode Forward Current - - 110 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 22 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 44 A dIF/dt = 100 A/s - 576 - nS Qrr Reverse Recovery Charge - 14.3 - C tf DRAIN-SOURCE DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NVHL072N65S3 TYPICAL CHARACTERISTICS VGS 20 V Top 10 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 60 30 40 Pulse Duration = 250 s TJ = 25C ID, Drain Current (A) ID, Drain Current (A) 90 VGS 20 V Top 10 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 30 20 10 0 0 0 1 2 3 4 5 0 1 VDS, Drain to Source Voltage (V) TJ = 25C 3 TJ = -55C 4 5 0.10 VGS = 10 V VGS = 20 V 0.05 0 7 6 8 0 20 VGS, Gate to Source Voltage (V) 80 60 100K VGS = 0 V 10K 10 1 0.1 TJ = 150C C iss 1K Coss 100 10 0.01 TJ = 25C 0.001 0 0.2 100 Figure 4. On-Resistance Variation vs. Drain Current and Gate Voltage Capacitance (pF) IS, Reverse Drain Current (A) 40 ID, Drain Current (A) Figure 3. Transfer Characteristic 100 5 TC = 25C 10 2 4 0.15 Pulse Duration = 250 s Duty Cycle = 0.5% Max VDS = 5 V TJ = 150C 3 Figure 2. Saturation Characteristics RSDS)ON), Drain-Source On-Resistance () ID, Drain Current (A) 100 2 VDS, Drain to Source Voltage (V) Figure 1. Saturation Characteristics 1 Pulse Duration = 250 s TJ = 25C 0.4 TJ = -55C 0.6 0.8 1.0 1 1.2 f = 1 MHz VGS = 0 V 0.1 Crss 1 10 100 1000 VSD, Body Diode Forward Voltage (V) VDS, Drain to Source Voltage (V) Figure 5. Forward Diode Characteristics Figure 6. Capacitance vs. Drain to Source Volatage www.onsemi.com 4 NVHL072N65S3 TYPICAL CHARACTERISTICS (continued) 1.2 ID = 75 A VDS = 130 V Normalized Drain to Source Breakdown Voltage VGS, Gate to Source Voltage (V) 10 8 VDS = 400 V 6 4 2 0 0 15 30 45 75 60 ID = 10 mA 1.1 1.0 0.9 0.8 -80 90 -40 QG, Gate Charge (nC) 0 40 80 120 160 TJ, Junction Temperature (C) Figure 7. Gate Charge vs. Gate to Source Voltage Figure 8. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 2.0 1.5 1.0 ID = 44 A VGS = 10 V 0.5 0 -80 -40 0 40 80 120 10 160 1 ms 1 Operation in this Area is Limited by RDS(on) 10 ms Single Pulse TJ = 150C TC = 25C DC 1 10 100 1000 TJ, Junction Temperature (C) VDS, Drain-Source Voltage (V) Figure 9. Normalized RDSON vs. Junction Temperature Figure 10. Forward Bias Safe Operating Area 20 18 50 16 14 40 EOSS (J) ID, Drain Current (A) 100 us 0.1 60 30 20 12 10 8 6 4 10 0 10 us 100 2.5 ID, Drain Current (A) Normalized Drain to Source ON-Resistance 3.0 25 50 75 100 125 2 0 150 TC, Case Temperature (C) 0 100 200 300 400 500 600 VDS, Drain to Source Voltage (V) Figure 11. Maximum Continuous Drain Current vs. Case Temperature Figure 12. EOSS vs. Drain to Source Voltage www.onsemi.com 5 700 NVHL072N65S3 TYPICAL CHARACTERISTICS (continued) 1000 1.0 IDM, Peak Current (A) Power Dissipation Multiplier 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 100 Current Max Limited 10 150 0.00001 0.0001 TC, Case Temperature (C) 0 Normalized Gate Threshold Voltage Pulse Duration = 250 s Duty Cycle = 0.5% Max ID = 44 A TJ = 25C 50 6 7 8 9 10 VGS = VDS ID = 1 mA 1.0 0.8 0.6 0.4 -80 -40 0 40 80 120 Figure 16. Normalized Gate Threshold Voltage vs. Temperature 10 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 0.001 PDM t1 t2 ZJC(t) = r(t) x RJC Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1/t2 SINGLE PULSE 0.00001 0.0001 0.001 160 TJ, Junction Temperature (C) Figure 15. EOSS vs. Drain to Source Voltage 1 1 1.2 VGS, Gate to Source Voltage (V) Normalized Thermal Impedance, ZJC RDS(on), On-Resistance (m) TJ = 150C 100 0.1 Figure 14. Peak Current Capability 250 150 0.01 t, Rectangular Pulse Duration (s) Figure 13. Normalized Power Dissipation vs. Case Temperature 200 0.001 0.01 0.1 1 t, Rectangular Pulse Duration (s) Figure 17. Normalized Maximum Transient Thermal Impedance www.onsemi.com 6 10 NVHL072N65S3 PACKAGE DIMENSIONS TO-247-3LD CASE 340CX ISSUE O www.onsemi.com 7 NVHL072N65S3 SUPERFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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