BC847AT/BT/CT COLLECTOR 3 General Purpose Transistor NPN Silicon 33 1 1 BASE 2 SC-89 (SOT-523F) 2 EMITTER M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO Value 45 50 6.0 IC 100 Unit Vdc Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (1) Junction and Storage, Temperature Range Device Marking BC847A=1E; BC847B=1F;BC847C=1G 1.FR-5=1.0 x 0.75 x 0.062 in. WE ITR O N http://www.weitron.com.tw Symbol PD Max Unit 150 2.4 R JA 833 mW mW/ C C/W TJ,Tstg -55 to +150 C WE IT R ON BC847AT/BT/CT Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Off Characteristics Collector-Emitter Breakdown Voltage (IC= 10mA) Collector-Emitter Breakdown Voltage (IC=10 uA ,VEB=0) Collector-Base Breakdown Voltage (IC=10 uA) V(BR)CEO 45 - - V V(BR)CES 50 - - V V(BR)CBO 50 - - V Emitter-Base Breakdown Voltage (IE=1.0 uA) V(BR)EBO 6.0 - - V ICBO - - 15 5.0 nA mA - 90 150 270 - 110 200 420 180 290 520 220 450 800 Collector Cutoff Current (VCB=30V) (VCB=30V, TA=150 C) On Characteristics DC Current Gain (IC= 10uA, VCE=5.0V) (IC= 2.0mA, VCE=5.0V) BC847A BC847B BC847C BC847A BC847B BC847C Collector-Emitter Saturation Voltage (IC= 10mA, IB=0.5mA) (IC= 100mA, IB=5.0mA) Base-Emitter Saturation Voltage (IC= 10mA, IB=0.5mA) (IC= 100mA, IB=5.0mA) Base-Emitter On Voltage (IC= 2.0mA, VCE=5.0V) hFE 0.25 0.6 V - V 660 - 700 770 V VCE(sat) - - VBE(sat) - 0.7 0.9 VBE(on) 580 - (IC= 10mA, VCE=5.0V) - Small-signal Characteristics Current-Gain-Bandwidth Product (IC= 10mA, VCE= 5.0Vdc, f=100MHz) Output Capacitance (VCB= 10V, f=1.0MHz) Noise Figure (IC= 0.2mA, VCE= 5.0Vdc, Rs=2.0 k , f=1.0 kHz, BW=200Hz) WEITRON http://www.weitron.com.tw fT 100 - - MHz Cobo - - 4.5 pF dB NF - - 10 WE IT R ON 1.0 2.0 VCE=10V TA=25 C 1.5 TA=25 C 0.9 V, VOLTAGE (VOLTS) hFE,NORMALIZED DC CURRENT GAIN BC847AT/BT/CT 1.0 0.8 0.6 0.4 0.8 VBE(sat)@IC/BC=10 0.7 VBE(ON)@VCE= 10V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat)@IC/BC=10 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 0.1 200 2.0 1.6 IC= 200mA 1.2 IC= 10mA IC= 20mA 0.4 0 IC= 100mA IC=-50mA 0.02 0.1 1.0 10 20 C,CAPACITANCE (pF) Cib 3.0 Cob 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 VR, REVERSE VOLTAGE (VOLTS) FIG.5 Capacitances WEITRON http://www.weitron.com.tw 40 fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) TA=25 C 2.0 5.0 7.0 10 20 30 50 70 100 -55 C to +125 C 1.2 1.6 2.0 2.4 2.8 0.2 1.0 10 IC, COLLECTOR CURRENT (mA) 100 FIG.4 Base-Emitter Temperature Coefficient 10 5.0 2.0 3.0 1.0 IB, BASE CURRENT (mA) FIG.3 Collector Saturation Region 7.0 0.5 0.7 1.0 IC, COLLECTOR CURRENT (mAdc) TA=25 C 0.8 0.2 0.3 FIG.2 "Saturation" And "On" Voltage qVB, TEMPERATURE COEFFICIENT (mV/ C) VCE, COLLECTOR- EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mAdc) FIG.1 Normalized DC Current Gain 400 300 200 VCE=10V TA= 25 C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) FIG.6 Current-Gain- Bandwidth Product 50 WE IT R ON BC847AT/BT/CT SC-89 Outline Demensions Unit:mm A SC-89 3 T OP V IE W 2 1 K B S G D N M C WEITRON http://www.weitron.com.tw J Dim A B C D G J K M N S Min 1.50 0.75 0.60 0.23 0.10 0.30 ----1.50 Nom 1.60 0.85 0.70 0.28 0.50BSC 0.15 0.40 ----1.60 Max 1.70 0.95 0.80 0.33 0.20 0.50 10 10 1.70