BC847AT - Weitron Technology - Datasheet.Directory

General Purpose Transistor

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Symbol

VCEO

Value

45

Unit

Rating

1

2

33

BASE

COLLECTOR

EMITTER

IC

VCBO

VEBO

50

6.0

mAdc

Vdc

Vdc

Vdc

Collector Current-Continuous 100

1.FR-5=1.0 x 0.75 x 0.062 in.

Device Marking

h t t p : / / w w w . w e i t r o n . c o m . t w

W E I T R O N

M aximum R atings ( TA=25 C unless otherwise noted)

Total Device Dissipation FR-5 Board

(1)TA=25 C

Derate above 25 C

Thermal Resistance, Junction to Ambient

Junction and Storage, Temperature Range

Characteristics

TJ,Tstg

R JA

PD

Symbol Max Unit

mW

mW/ C

C/W

C

Thermal Characteristics

(1)

150

2.4

833

-55 to +150

SC-89

(SOT-523F)

3

2

1

NPN Silicon

BC847A=1E; BC847B=1F;BC847C=1G

BC847AT/BT/CT

WEITRON

http://www.weitron.com.tw

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Small-signal Characteristics

Current-Gain-Bandwidth Product

(IC= 10mA, VCE= 5.0Vdc, f=100MHz)

Output Capacitance

(VCB= 10V, f=1.0MHz)

Noise Figure

(IC= 0.2mA, VCE= 5.0Vdc,

Rs=2.0 k ,

f=1.0 kHz, BW=200Hz)

fT

Cobo

NF

MHz

pF

100

- -

- -

-

-

-

-

4.5

10

dB

V

V

V

DC Current Gain

(IC= 10uA, VCE=5.0V)

Collector-Emitter Saturation Voltage

(IC= 10mA, IB=0.5mA)

(IC= 100mA, IB=5.0mA)

Base-Emitter Saturation Voltage

(IC= 10mA, IB=0.5mA)

(IC= 100mA, IB=5.0mA)

Base-Emitter On Voltage

(IC= 2.0mA, VCE=5.0V)

(IC= 10mA, VCE=5.0V)

hFE

VCE(sat)

VBE(sat)

VBE(on)

On Characteristics

110

200

420

-

-

-

-

-

-

660

-

-

-

580

-

90

150

270

0.7

0.9

220

450

800

0.25

0.6

700

770

-

--

-

-

- -

-

-

-

-

(IC= 2.0mA, VCE=5.0V) 180

290

520

BC847AT/BT/CT

Collector-Emitter Breakdown Voltage

(IC= 10mA)

Collector-Emitter Breakdown Voltage

(IC=10 uA ,VEB=0)

Collector-Base Breakdown Voltage

(IC=10 uA)

Emitter-Base Breakdown Voltage

(IE=1.0 uA)

Collector Cutoff Current (VCB=30V)

(VCB=30V, TA=150 C)

V(BR)CEO 45

50

50

6.0

15

5.0

V(BR)CBO

V(BR)CES

V(BR)EBO

ICBO nA

mA

V

V

V

V

Characteristics Symbol Min Max Unit

Off Characteristics

Typ

Electrical Characteristics (TA=25 C Unless Otherwise noted)

BC847A

BC847B

BC847C

BC847A

BC847B

BC847C

-

-

-

-

-

-

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BC847AT/BT/CT

http://www.weitron.com.tw

FIG.5 Capacitances

VR, REVERSE VOLTAGE (VOLTS)

C,CAPACITANCE (pF)

0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40

10

7.0

5.0

3.0

2.0

1.0

Cib

TA=25 C

Cob

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50

IC, COLLECTOR CURRENT (mAdc)

FIG.6 Current-Gain- Bandwidth Product

fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)

400

300

200

100

80

60

40

20

30

VCE=10V

TA= 25 C

FIG.1 Normalized DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

hFE,NORMALIZED DC CURRENT GAIN

0.2 0.5 1.0 2.0 5.0 10 20 50 100 200

2.0

1.5

1.0

0.8

0.6

0.4

0.3

0.2

VCE=10V

TA=25 C

FIG.2 "Saturation" And "On" Voltage

IC, COLLECTOR CURRENT (mAdc)

V, VOLTAGE (VOLTS)

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

TA=25 C

VBE(sat)@IC/BC=10

VBE(ON)@VCE= 10V

VCE(sat)@IC/BC=10

FIG.3 Collector Saturation Region

IB, BASE CURRENT (mA)

VCE, COLLECTOR- EMITTER VOLTAGE (V)

TA=25 C

IC= 200mA

IC=-50mA

IC= 20mA

IC=

10mA

IC= 100mA

0.02 0.1 1.0 10 20

2.0

1.6

1.2

0.8

0.4

0

qVB, TEMPERATURE COEFFICIENT (mV/ C)

-55 C to +125 C

1.0

1.2

1.6

2.0

2.4

2.8

0.2 1.0 10 100

IC, COLLECTOR CURRENT (mA)

FIG.4 Base-Emitter Temperature Coefficient

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BC847AT/BT/CT

http://www.weitron.com.tw

Unit:mm

SC-89 Outline Demensions

A

12

3

B

G

D

J

N

M

K

C

TOP VIE W S

Dim

A

B

C

D

G

J

K

M

Min

1.50

0.75

0.60

0.23

Nom

1.60

0.85

0.70

0.28

Max

1.70

0.95

0.80

0.33

SC-89

0.50BSC

0.10 0.15 0.20

0.30

1.50

0.40 0.50

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10N

S1.60 1.70