P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H556 SWITCHING AND AMPLIFIER ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 T stg ----Storage Temperature.............................. -55~150 T j ----Junction Temperature.......................................150 PC----Collector Dissipation.......................................500mW 1CollectorC 2BaseB 3EmitterE VCBO----Collector-Base Voltage....................................-80V VCEO----Collector-Emitter Voltage.................................-65V V EBO ----Emitter-Base Voltage....................................-5V I C ----Collector Current..........................................-100mA ELECTRICAL CHARACTERISTICSTa=25 Symbol Characteristics Min ICBO Collector Cut-off Current HFE DC Current Gain VCE(sat1) Collector- Emitter Saturation Voltage 110 VCE(sat2) VBE(sat1) Typ Base-Emitter Saturation Voltage VBE(sat2) -600 Max Unit Test Conditions -15 nA VCB=-30V, IE=0 800 VCE=-5V, IC=-2mA -90 -300 mV IC=-10mA, IB=-0.5mA -250 -650 mV IC=-100mA, IB=-5mA -0.7 V IC=-10mA, IB=-0.5mA -0.9 V IC=-100mA, IB=-5mA -660 VBE(ON) Base-Emitter On Voltage fT Current Gain-Bandwidth Product 150 NF Noise Figure 2 -750 mV MHz 10 dB hFE Classification A B C 110--220 200--450 420--800 VCE=-5V, IC=-2mA VCE=-5V, IC=-10mA f=100MHz VCE=-5V, IC=-200A f=1KHzRg=2K