Shantou Huashan Electronic Devices Co.,Ltd.
H556
P N P S I L I C O N T R A N S I S T O R
█ SWITCHING AND AMPLIFIER
1―Collector，C
2―Base，B
3―Emitter，E
TO-92
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………500mW
VCBO——Collector-Base Voltage………………………………-80
V
VCEO——Collector-Emitter Voltage……………………………-65V
VEBO——Emitter-Base Voltage………………………………-5
V
IC——Collector Current……………………………………-100m
A
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol Characteristics Min Typ Max Unit Test Conditions
ICBO Collector Cut-off Current -15 nA VCB=-30V, IE=0
HFE DC Current Gain 110 800 VCE=-5V, IC=-2mA
VCE(sat1) Collector- Emitter Saturation Voltage -90 -300 mV
IC=-10mA, IB=-0.5mA
VCE(sat2) -250 -650 mV
IC=-100mA, IB=-5mA
VBE(sat1) Base-Emitter Saturation Voltage -0.7 V IC=-10mA, IB=-0.5mA
VBE(sat2) -0.9 V IC=-100mA, IB=-5mA
VBE(ON) Base-Emitter On Voltage -600 -660 -750 mV VCE=-5V, IC=-2mA
fT Current Gain-Bandwidth Product 150 MHz
VCE=-5V, IC=-10mA
f=100MHz
NF Noise Figure
2 10 dB
VCE=-5V, IC=-200μA
f=1KHz，Rg=2KΩ
█ hFE Classification
A B C
110—220 200—450 420—800
