0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Maximum Ratings and Thermal Characteristics (TA= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Collector-Emitter Voltage (base shorted) BC817 VCES 50 V
BC818 30
Collector-Emitter Voltage (base open) BC817 VCEO 45 V
BC818 25
Emitter-Base Voltage VEBO 5V
Collector Current IC800 mA
Peak Collector Current ICM 1000 mA
Peak Base Current IBM 200 mA
Peak Emitter Current –IEM 1000 mA
Power Dissipation at TSB = 50 ˚C Ptot 310(1) mW
Thermal Resistance Junction to Ambiant Air RθJA 450(1) °C/W
Thermal Resistance Junction to Substrate Backside RθSB 320(1) °C/W
Junction Temperature Tj150 °C
Storage Temperature Range TS– 65 to +150 °C
Note: (1) Device on fiberglass substrate, see layout on third page.
BC817, BC818
Small Signal Transistors (NPN)
3/22/01
.016 (0.4)
.056 (1.43)
.037(0.95).037(0.95)
max. .004 (0.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
12
3Top View
.102 (2.6)
.007 (0.175)
.045 (1.15)
.110 (2.8)
.052 (1.33)
.005 (0.125)
.094 (2.4)
.037 (0.95)
Features
• NPN Silicon Epitaxial Planar Transistors for
switching, AF driver and amplifier applications.
• Especially suited for automatic insertion in thick
and thin-film circuits.
• These transistors are subdivided into three groups
-16, -25, and -40 according to their current gain.
•As complementary types, the PNP transistors
BC807 and BC808 are recommended.
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
Mounting Pad Layout
Type Marking
BC817-16 6A
-25 6B
-40 6C
BC818-16 6E
-25 6F
-40 6G
Pin Configuration
1 = Base
2 = Emitter
3 = Collector
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
DC Current Gain Current Gain Group-16 hFE VCE = 1V, IC= 100mA 100 —250 —
-25 160 —400 —
-40 250 —600 —
hFE VCE = 1V, IC= 500mA 40 ———
Collector Saturation Voltage VCEsat IC= 500mA, IB= 50mA ——0.7 V
Base Saturation Voltage VBEsat IC= 500mA, IB= 50mA ——1.3 V
Base-Emitter Voltage VBEon VCE = 1V, IC= 500mA ——1.2 V
Collector-Base Cutoff Current ICBO VCB = 20V ——100 nA
VCB = 20V, TJ= 150°C—— 5µA
Emitter-Base Cutoff Current IEBO VEB = 4V ——100 nA
Gain-Bandwidth Product fTVCE = 5V, IC = 10mA —100 —MHz
f = 50MHz
Collector-Base Capacitance CCBO VCB = 10V, f = 1MHz —12 —pF
Note:
(1) Device on fiberglass substrate, see layout below.
0.59 (15)
0.2 (5)
0.03 (0.8)
0.30 (7.5)
0.12 (3)
.04 (1)
0.06 (1.5)
0.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
0.47 (12)
Dimensions in inches (millimeters)
Layout for RθJA test
Thickness: Fiberglass 0.059 in. (1.5 mm)
Copper leads 0.012 in. (0.3 mm)
BC817, BC818
Small Signal Transistors (NPN)
BC817, BC818
Small Signal Transistors (NPN)
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
BC817, BC818
Small Signal Transistors (NPN)
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
BC817, BC818
Small Signal Transistors (NPN)
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
