WEDPS512K32-XBX
May 2011 © 2011 Microsemi Corporation. All rights reserved. 2 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 7 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
TRUTH TABLE
CS OE WE Mode Data I/O Power
H X X Standby High Z Standby
L L H Read Data Out Active
L H H Out Disable High Z Active
L X L Write Data In Active
BGA THERMAL RESISTANCE
Description Symbol Max Unit Notes
Junction to Ambient (No Airfl ow) Theta JA 16.5 °C/W 1
Junction to Ball Theta JB 11.3 °C/W 1
Junction to Case (Top) Theta JC 9.8 °C/W 1
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Min Max Unit
Operating Temperature TA-55 +125 °C
Storage Temperature TSTG -65 +150 °C
Signal Voltage Relative to GND VG-0.5 VCC+0.5 V
Junction Temperature TJ150 °C
Supply Voltage VCC -0.5 7.0 V
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Min Max Unit
Supply Voltage VCC 4.5 5.5 V
Input High Voltage VIH 2.2 VCC + 0.3 V
Input Low Voltage VIL -0.5 +0.8 V
Operating Temp (Mil) TA-55 +125 °C
CAPACITANCE
(TA = +25°C)
Parameter Symbol Conditions Max Unit
OE# capacitance COE VIN = 0 V, f = 1.0 MHz 30 pF
WE#1-4 capacitance CWE VIN = 0 V, f = 1.0 MHz 10 pF
CS#1-4 capacitance CCS VIN = 0 V, f = 1.0 MHz 10 pF
Data I/O capacitance CI/O VI/O = 0 V, f = 1.0 MHz 10 pF
Address input capacitance CAD VIN = 0 V, f = 1.0 MHz 30 pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter Symbol Conditions Min Max Units
Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 μA
Output Leakage Current ILO CS# = VIH, OE# = VIH, VOUT = GND to VCC 10 μA
Operating Supply Current x 32 Mode ICC x 32 CS# = VIL, OE# = VIH, f = 5MHz, Vcc = 5.5 660 mA
Standby Current ISB CS# = VIH, OE# = VIH, f = 5MHz, Vcc = 5.5 80 mA
Output Low Voltage VOL IOL = 8mA 0.4 V
Output High Voltage VOH IOH = -4.0mA 2.4 V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V