MIXERS - I/Q RECEIVERS - CHIP
2
2 - 1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC570
GaAs MMIC I/Q DOWNCONVERTER
17 - 21 GHz
v03.0711
General Description
FeaturesTypical Applications
The HMC570 is a compact GaAs MMIC I/Q
downconverter chip which provides a small signal
conversion gain of 10 dB with a noise gure of 3 dB
and 17 dB of image rejection across the frequency
band. The device utilizes an LNA followed by an image
reject mixer which is driven by an active x2 multiplier.
The image reject mixer eliminates the need for a lter
following the LNA, and removes thermal noise at the
image frequency. I and Q mixer outputs are provided
and an external 90° hybrid is needed to select the
required sideband. All data shown below is taken
with the chip mounted in a 50 Ohm test xture and
includes the effects of 1 mil diameter x 20 mil length
bond wires on each port. This product is a much
smaller alternative to hybrid style image reject mixer
downconverter assemblies.
Electrical Specications, TA = +25° C, IF = 100 MHz, LO = +4 dBm, Vdd = 3.5 Vdc*
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range, RF 17.7 - 19.7 17 - 21 GHz
Frequency Range, LO 7 - 12 7 - 12 GHz
Frequency Range, IF DC - 3.5 DC - 3.5 GHz
Conversion Gain (As IRM) 9 10 9 12 dB
Noise Figure 3 4 dB
Image Rejection 14 17 14 22 dB
1 dB Compression (Input) -7 -4 -10 -6 dBm
2 LO to RF Isolation 35 40 30 35 dB
2 LO to IF Isolation 28 30 25 30 dB
IP3 (Input) -5 -2 -6 +3 dBm
Amplitude Balance 0.5 0.5 dB
Phase Balance 12 4 Deg
Total Supply Current 125 165 125 165 mA
*Data taken as IRM with external IF hybrid
Functional Diagram
The HMC570 is ideal for:
• Point-to-Point and Point-to-Multi-Point Radio
• Military Radar, EW & ELINT
• Satellite Communications
10 dB Conversion Gain
Image Rejection: 17 dB
2 LO to RF Isolation: 35 dB
Noise Figure: 3 dB
Input IP3: +3 dBm
Die Size: 2.33 x 2.73 x 0.10 mm
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - I/Q RECEIVERS - CHIP
2
2 - 2
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Conversion Gain vs. Temperature
Input P1dB vs. Temperature
Conversion Gain vs. LO Drive
Image Rejection vs. Temperature
Return Loss
Input IP3 vs. LO Drive
Data Taken As IRM With External IF Hybrid
-10
-5
0
5
10
15
20
16 17 18 19 20 21 22
+25C
+85C
-55C
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
0
5
10
15
20
25
30
16 17 18 19 20 21 22
+25C
+85C
-55C
IMAGE REJECTION (dB)
RF FREQUENCY (GHz)
-10
-5
0
5
10
15
20
16 17 18 19 20 21 22
0 dBm
+2 dBm
+4 dBm
+6 dBm
+8 dBm
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
6 8 10 12 14 16 18 20 22
RF
LO
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
16 17 18 19 20 21 22
+25C
+85C
-55C
P1dB (dBm)
RF FREQUENCY (GHz)
-10
-5
0
5
10
16 17 18 19 20 21 22
LO = 0 dBm
LO = +2 dBm
LO = +4 dBm
LO = +6 dBm
LO = +8 dBm
IP3 (dBm)
RF FREQUENCY (GHz)
HMC570
v03.0711
GaAs MMIC I/Q DOWNCONVERTER
17 - 21 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - I/Q RECEIVERS - CHIP
2
2 - 3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Isolations IF Bandwidth*
Amplitude Balance vs. LO Drive Phase Balance vs. LO Drive
Quadrature Channel Data Taken Without IF Hybrid
* Conversion gain data taken with external IF hybrid, LO Frequency xed at 8.6 GHz and RF varied
-60
-50
-40
-30
-20
-10
0
10
16 17 18 19 20 21 22
ISOLATION (dB)
RF FREQUENCY (GHz)
2LO/IF2
2LO/IF1
RF/IF1
RF/IF2
2LO/RF
-20
-15
-10
-5
0
5
10
15
20
0.5 1 1.5 2 2.5 3 3.5
CONVERSION GAIN
RETURN LOSS
RESPONSE (dB)
IF FREQUENCY (GHz)
-2
-1.5
-1
-0.5
0
0.5
1
1.5
2
16 17 18 19 20 21 22
LO = 0 dBm
LO = +2 dBm
LO = +4 dBm
LO = +6 dBm
LO = +8 dBm
AMPLITUDE BALANCE (dB)
RF FREQUENCY (GHz)
-5
0
5
10
15
20
16 17 18 19 20 21 22
LO = 0 dBm
LO = +2 dBm
LO = +4 dBm
LO = +6 dBm
LO = +8 dBm
PHASE BALANCE (degrees)
RF FREQUENCY (GHz)
Noise Figure vs. LO Drive,
LO Frequency = 8.6 GHz
0
2
4
6
8
0.5 1 1.5 2 2.5 3 3.5 4
0 dBm
+2 dBm
+4 dBm
+6 dBm
+8 dBm
CONVERSION GAIN (dB)
IF FREQUENCY (GHz)
Noise Figure vs. LO Drive,
IF Frequency = 100 MHz
0
1
2
3
4
5
6
16 17 18 19 20 21 22
0 dBm
+2 dBm
+4 dBm
+6 dBm
+8 dBm
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
HMC570
v03.0711
GaAs MMIC I/Q DOWNCONVERTER
17 - 21 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - I/Q RECEIVERS - CHIP
2
2 - 4
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Absolute Maximum Ratings
RF +2 dBm
LO Drive + 13 dBm
Vdd 5.5V
Channel Temperature 175°C
Continuous Pdiss (T=85°C)
(derate 10.2 mW/°C above 85°C) 920 mW
Thermal Resistance (RTH)
(channel to package bottom) 98.3 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ESD Sensitivity (HBM) Class 1B
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MxN Spurious Outputs
nLO
mRF 0 1 2 3 4
0 xx 26 25 19 27
1 27 26 0 25 38
2 54 74 61 66 43
3 xx xx xx 79 76
4 xx xx xx xx xx
RF = 18 GHz @ -20 dBm
LO = 8.5 GHz @ +4 dBm
Data taken without IF hybrid
All values in dBc below IF power level (1RF -2LO = 1 GHz)
HMC570
v03.0711
GaAs MMIC I/Q DOWNCONVERTER
17 - 21 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - I/Q RECEIVERS - CHIP
2
2 - 5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS 0.004”
3. BOND PAD METALIZATION: GOLD
4. BACKSIDE METALIZATION: GOLD
5. BACKSIDE METAL IS GROUND
6. OVERALL DIE SIZE ±0.002
Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC570
v03.0711
GaAs MMIC I/Q DOWNCONVERTER
17 - 21 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - I/Q RECEIVERS - CHIP
2
2 - 6
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Pad Number Function Description Interface Schematic
1 VddRF Power supply for RF LNA.
External RF bypass capacitors are required.
2 VddLO2 Power supply for second stage of LO amplier.
External RF bypass capacitors are required.
3 VddLO Power supply for rst stage of LO amplier.
External RF bypass capacitors are required.
4 LO This pad is AC coupled
and matched to 50 Ohms.
5 IF1
This pad is DC coupled. For applications not requir-
ing operation to DC, this port should be DC blocked
externally using a series capacitor whose value has
been chosen to pass the necessary frequency range.
For operation to DC, this pad must not source /sink more
than 3 mA of current or die non - function and possible
die failure will result.
6 IF2
7 RF This pad is AC coupled
and matched to 50 Ohms.
GND The backside of the die must be
connected to RF/DC ground.
Pad Descriptions
Typical Application
HMC570
v03.0711
GaAs MMIC I/Q DOWNCONVERTER
17 - 21 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - I/Q RECEIVERS - CHIP
2
2 - 7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Assembly Drawing
HMC570
v03.0711
GaAs MMIC I/Q DOWNCONVERTER
17 - 21 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - I/Q RECEIVERS - CHIP
2
2 - 8
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to
minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms
or with electrically conductive epoxy. The mounting surface should be clean and
at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on
the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC570
v03.0711
GaAs MMIC I/Q DOWNCONVERTER
17 - 21 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Analog Devices Inc.:
HMC570 HMC570-SX