VUO36-12NO8
3~ Rectifier Bridge
Standard Rectifier Module
-
~ +~ ~
Part number
VUO36-12NO8
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
FO-B
● Industry standard outline
● RoHS compliant
● ¼“ fast-on terminals
● Easy to mount with one screw
RRM
1200
I27
FSM
550
DAV
V=V
A
A
=
=
I
3~
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130529cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO36-12NO8
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.04
R7K/W
R
min.
27
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
85
P
tot
17 WT = 25°C
C
RK/W1
15
1200
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions Unit
1.23
T = 25°C
VJ
150
V
F0
V0.76T = °C
VJ
150
r
F
9.1 mΩ
V0.93T = °C
VJ
I = A
F
V
15
1.18
I = A
F
45
I = A
F
45
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1200
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
18
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
550
595
1.11
1.06
A
A
A
A
470
505
1.52
1.48
1200
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1300
IXYS reserves the right to change limits, conditions and dimensions. 20130529cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO36-12NO8
Ratings
XXX XX-XXXXX YYWW
Marking on product Date Code
Logo
Package
T
VJ
°C
M
D
Nm2.2
mounting torque 1.8
T
stg
°C125
storage temperature -40
Weight g20
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
9.0 7.0
10.0 10.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 100 A
per terminal
150-40
terminal to terminal
FO-B
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VUO36-12NO8 465143Box 50VUO36-12NO8Standard
2500
3000
ISOL
threshold voltage V0.76
mΩ
V
0 max
R
0 max
slope resistance * 7.9
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130529cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO36-12NO8
6.3 x 0.8
A
B
CDE
22.1 ±0.5
10 ±0.2
28.5 ±0.2
8±0.3
12 ±0.3
28.5 ±0.2
12 ±0.3
-
~ +~ ~
Outlines FO-B
IXYS reserves the right to change limits, conditions and dimensions. 20130529cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO36-12NO8
011
400
800
1200
1600
V
F
[V]
I
F
[A]
0.4 0.8 1.2
0
10
20
30
40
50
60
10
-3
10
-2
10
-1
10
0
200
250
300
350
400
450
1 10 100 1000 10000 100000
0
2
4
6
8
0 25 50 75 100 125 150 1750246810
0
2
4
6
8
10
0 25 50 75 100 125 150
0
4
8
12
16
20
24
I
FSM
[A]
t[s] t[ms]
I
2
t
[A
2
s]
P
tot
[W]
I
F(AV)M
[A] T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
t[ms]
Constants for Z
thJC
calculation:
iR
th
(K/W) t
i
(s)
1 0.040 0.005
2 0.150 0.030
3 1.710 0.400
4 5.100 2.300
0.8 x V
RRM
50 Hz
T
VJ
=45°C
T
VJ
=45°C
V
R
=0 V
R
thJA
:
0.6 KW
0.8 KW
1KW
2KW
4KW
8KW
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=
125°C
150°C
T
VJ
=25°C
T
VJ
= 150°C T
VJ
=150°C
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t vs. time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fi
g
. 6 Transient thermal im
p
edance
j
unctiontocasevs.time
p
er diode
DC =
1
0.5
0.4
0.33
0.17
0.08
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130529cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
