IXFN 82N60P PolarHVTM HiPerFET Power MOSFET VDSS ID25 = = RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25 C 72 A IDM TC = 25 C, pulse width limited by TJM 200 A IAR TC = 25 C 82 A EAR TC = 25 C 100 mJ EAS TC = 25 C 5 J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 2 20 V/ns PD TC = 25 C 1040 W -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, IISOL 1 mA, Md Mounting torque, Terminal connection torque T = 1 min T=1s 300 C 2500 3000 V~ V~ 1.5/13 lb.in. Weight 30 g Symbol Test Conditions (TJ = 25 C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 3 mA 600 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS V 5.0 V VGS = 30 VDC, VDS = 0 200 nA IDSS VDS = VDSS VGS = 0 V 25 1000 A A RDS(on) VGS = 10 V, ID = IT, Note 1 75 m TJ = 125 C 600 V 82 A 75 m 200 ns miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features * International standard package * Encapsulating epoxy meets UL 94 V-0, flammability classification * miniBLOC with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance * Fast intrinsic Rectifier Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls * Low voltage relays * * * * Advantages * Easy to mount * Space savings * High power density DS99559E(01/06) (c) 2006 IXYS All rights reserved http://store.iiic.cc/ IXFN 82N60P Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = IT, Note 1 50 80 S 23 nF 1490 pF 200 pF Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Coss Crss 28 ns tr td(on) VGS = 10 V, VDS = 0.5 VDSS, ID = IT 23 ns td(off) RG = 1 (External) 79 ns 24 ns 240 nC 96 nC 67 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT Qgd SOT-227B Outline 0.12 C/W RthJC C/W 0.13 RthCS Source-Drain Diode Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 82 A ISM Repetitive 200 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 25A, -di/dt = 100 A/s 200 ns QRM IRM VR = 100V 0.6 6.0 C A Notes: 1. Pulse test, t 300 s, duty cycle d 2 % Test Current IT = 41A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFN 82N60P Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 90 180 V GS = 10V 8V 80 70 140 7V 60 I D - Amperes I D - Amperes V GS = 10V 8V 160 50 40 6V 30 120 7V 100 80 60 6V 20 40 10 20 5V 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 2 4 6 90 12 14 16 18 20 3.1 V GS = 10V 7V 80 V GS = 10V 2.8 70 2.5 R DS(on) - Normalized I D - Amperes 10 Fig. 4. R DS(on) Normalized to ID = 41A Value v s. Junction Temperature Fig. 3. Output Characteristics @ 125C 60 6V 50 40 30 20 2.2 1.9 I D = 82A 1.6 I D = 41A 1.3 1 10 0.7 5V 0 0.4 0 2 4 6 8 10 12 14 -50 -25 V DS - Volts 0 25 50 75 100 125 150 125 150 T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 41A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3 80 V GS = 10V 2.8 70 TJ = 125C 2.6 60 2.4 2.2 I D - Amperes R DS(on) - Normalized 8 V DS - Volts V DS - Volts 2 1.8 1.6 1.4 50 40 30 20 1.2 TJ = 25C 10 1 0.8 0 20 40 60 80 100 120 140 160 180 I D - Amperes 0 -50 -25 0 25 50 75 T J - Degrees Centigrade (c) 2006 IXYS All rights reserved http://store.iiic.cc/ 100 IXFN 82N60P Fig. 8. Transconductance Fig. 7. Input Admittance 160 120 110 TJ = 125C 25C - 40C 100 120 80 g f s - Siemens I D - Amperes 90 140 70 60 50 40 100 TJ = - 40C 25C 125C 80 60 40 30 20 20 10 0 0 3.5 4 4.5 5 5.5 6 6.5 0 7 20 40 V GS - Volts 80 100 120 140 Fig. 10. Gate Charge 250 10 225 9 200 8 175 7 V GS - Volts I S - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 150 125 TJ = 125C 100 60 I D - Amperes 75 V DS = 300V I D = 41A I G = 10mA 6 5 4 3 TJ = 25C 50 2 25 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 25 50 V SD - Volts 75 100 125 150 175 200 225 250 Q G - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1,000 RDS(on) Limit C iss 10,000 I D - Amperes Capacitance - PicoFarads f = 1 MHz C oss 1,000 25s 100 100s 1ms 10 10ms DC C rss TJ = 150C TC = 25C 100 1 0 5 10 15 20 25 30 35 40 10 100 V DS - Volts V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. http://store.iiic.cc/ 1000 IXFN 82N60P Fig. 13. Maximum Transient Thermal Resistance R (th)JC - C / W 1.000 0.100 0.010 0.001 0.0001 0.001 0.01 Pulse W idth - Seconds (c) 2006 IXYS All rights reserved http://store.iiic.cc/ 0.1 1 10