SEMICONDUCTOR TIP117 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES *High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. *Low Collector-Emitter Saturation Voltage. *Complementary to TIP112. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V DC IC -2 Pulse ICP -4 Base Current DC IB -50 Collector Power Ta=25 Dissipation Tc=25 Collector Current A 2 PC Junction Temperature Storage Temperature Range mA W 50 Tj 150 Tstg -65150 EQUIVALENT CIRCUIT ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. ICEO VCE=-50V, IB=0 - - -2 ICBO VCB=-100V, IE=0 - - -1 Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -2 VCE=-4V, IC=-1A 1000 - - DC Current Gain hFE VCE=-4V, IC=-2A 500 - - Collector Cut-off Current UNIT mA mA Collector-Emitter Sustaining Voltage VCEO(SUS) IC=-30mA, IB=0 -100 - - V Collector-Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-8mA - - -2.5 V Base-Emitter On Voltage VBE(ON) VCE=-4V, IC=-2A - - -2.8 V VCB=-10V, IE=0, f=0.1MHz - - 200 pF Collector Output Capacitance 1999. 11. 6 Revision No : 1 Cob 1/2 TIP117 1999. 11. 6 Revision No : 1 2/2