1999. 11. 6 1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP117
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
·High DC Current Gain.
: hFE=1000(Min.), ï¼ VCE=-4V, IC=-1A.
·Low Collector-Emitter Saturation Voltage.
·Complementary to TIP112.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage VCEO -100 V
Emitter-Base Voltage VEBO -5 V
Collector Current
DC IC-2
A
Pulse ICP -4
Base Current DC IB-50 mA
Collector Power
Dissipation
Ta=25℃PC
2
W
Tc=25℃50
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -65～150 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
ICEO VCE=-50V, IB=0 - - -2
mA
ICBO VCB=-100V, IE=0 - - -1
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -2 mA
DC Current Gain hFE
VCE=-4V, IC=-1A 1000 - -
VCE=-4V, IC=-2A 500 - -
Collector-Emitter Sustaining Voltage VCEO(SUS) IC=-30mA, IB=0 -100 - - V
Collector-Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-8mA - - -2.5 V
Base-Emitter On Voltage VBE(ON) VCE=-4V, IC=-2A - - -2.8 V
Collector Output Capacitance Cob VCB=-10V, IE=0, f=0.1MHz - - 200 pF
EQUIVALENT CIRCUIT
1999. 11. 6 2/2
TIP117
Revision No : 1
