Databook.fxp 1/14/99 11:29 AM Page B-5 B-5 01/99 2N3954, 2N3955, 2N3956 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Low and Medium Frequency Differential Amplifiers High Input Impedance Amplifiers 2N3954 At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Total Device Power Dissipation (each side) @ 85C Case Temperature (both sides) Power Derating (both sides) Min V(BR)GSS - 50 IGSS IG Gate Source Voltage VGS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) IDSS Max 2N3955 Min Max - 50 2N3956 Min - 50 V 50 mA 250 mW 500 mW 4.3 mW/C Process NJ16 Max Unit V IG = - 1A, VDS = OV pA VGS = - 30V, VDS = OV - 50 Test Conditions - 100 - 100 - 100 - 500 - 500 - 500 nA VGS = - 30V, VDS = OV - 50 - 50 - 50 pA VDS = 20V, ID = 200 A - 250 - 250 - 250 nA VDS = 20V, ID = 200 A - 4.2 - 4.2 - 4.2 V VDS = 20V, ID = 50 A - 0.5 -4 - 0.5 -4 - 0.5 -4 V VDS = 20V, ID = 200 A -1 - 4.5 -1 - 4.5 -1 - 4.5 V VDS = - 20V, IG = 1 nA 2 V VDS = OV, IG = 1 mA 0.5 5 0.5 5 0.5 5 mA VDS = 20V, VGS = OV 1000 3000 1000 3000 1000 3000 2 2 TA = 125C TA = 125C Dynamic Electrical Characteristics Common Source Forward Transconductance g fs 1000 1000 1000 S VDS = 20V, VGS = OV f = 1 kHz S VDS = 20V, VGS = OV f = 200 MHz Common Source Output Capacitance gos 35 35 35 S VDS = 20V, VGS = OV f = 1 kHz Common Source Input Capacitance Ciss 4 4 4 pF VDS = 20V, VGS = OV f = 1 MHz Drain Gate Capacitance Cdgo 1.5 1.5 1.5 pF Vdg = 10V, IS = OA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1.2 1.2 1.2 pF VDS = 20V, VGS = OV f = 1 MHz Noise Figure NF 0.5 0.5 0.5 dB VDS = 20V, VGS = OV, Rg = 10 M f = 100 Hz Differential Gate Current | IG1 - IG2 | 10 10 10 nA VDS = 20V, ID = 200A TA = 125C Saturation Drain Current Ratio IDSS1 /IDSS2 0.95 | VGS1 - VGS2 | 5 10 15 mV VDS = 20V, ID = 200A 0.8 2 4 mV/C VDS = 20V, ID = 200A 1 2.5 5 mV/C VDS = 20V, ID = 200A to = +125C VDS = 20V, ID = 200A f = 1 kHz Differential Gate Source Voltage Differential Gate Source Voltage with Temperature Transconductance Ratio VGS1 - VGS2 T gfs1 /gfs2 0.97 1 1 TO71 Package Pin Configuration See Section G for Outline Dimensions 1 Source, 2 Drain, 3 Gate, 5 Source, 6 Drain, 7 Gate www.interfet.com 0.95 0.97 1 1 0.95 0.97 1 1 VDS = 20V, VGS = OV TA = 25C to = - 55C TA = 25C 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375