BCP 51M ... BCP 53M
1
Semiconductor Group Au -11-1998
PNP Silicon AF Transistor
• For AF driver and output stages
• High collector current
• Low collector-emitter saturation voltage
• Complementary types: BCP 54M...BCP 56M(NPN)
VPW05980
123
5
4
Type Marking Ordering Code Pin Configuration Package
SCT-5952 = C 5 = C3 = E1 = BBCP 51M
BCP 52M
BCP 53M
AAs
AEs
AHs
Q62702-C2592
Q62702-C2593
Q62702-C2594
4 n.c.
Maximum Ratings
Parameter Symbol BCP 53M UnitBCP 52MBCP 51M
V45
V
CEO 60 80Collector-emitter voltage
V
CBO 45 100Collector-base voltage 60
5
V
EBO 5Emitter-base voltage 5 mADC collector current
I
C1
Peak collector current
I
CM A1.5
100 mABase current
I
B
Peak base current 200
I
BM
P
tot 1.7 W
Total power dissipation,
T
S ≤ 77 °C °C150Junction temperature
T
j
Storage temperature
T
stg -65...+150
Thermal Resistance
R
thJA ≤98
Junction ambient 1) K/W
Junction - soldering point
R
thJS ≤43
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group 1 1998-11-01
BCP 51M ... BCP 53M
2
Semiconductor Group Au -11-1998
Electrical Characteristics at
T
A = 25°C, unless otherwise specified.
Symbol Values UnitParameter
min. max.typ.
DC Characteristics
-
-
-
-
-
-
V
45
60
80
V
(BR)CEO
BCP 51M
BCP 52M
BCP 53M
Collector-emitter breakdown voltage
I
C = 10 mA,
I
B = 0
45
60
100
-
-
-
BCP 51M
BCP 52M
BCP 53M
-
-
-
V
(BR)CBO
Collector-base breakdown voltage
I
C = 100 µA,
I
B = 0
V
(BR)EBO 5Emitter-base breakdown voltage
I
E = 10 µA,
I
C = 0 - -
nA100Collector cutoff current
V
CB = 30 V,
I
E = 0 -
I
CBO -
µA- 20-Collector cutoff current
V
CB = 30 V,
I
E = 0 ,
T
A = 150 °C
I
CBO
- -25 -
h
FE
DC current gain 1)
I
C = 5 mA,
V
CE = 2 V 250
h
FE -40DC current gain 1)
I
C = 150 mA,
V
CE = 2 V
- -
h
FE 25DC current gain 1)
I
C = 500 mA,
V
CE = 2 V
0.5-
V
CEsat
Collector-emitter saturation voltage1)
I
C = 500 mA,
I
B = 50 mA - V
1Base-emitter voltage 1)
I
C = 500 mA,
V
CE = 2 V
V
BE(ON) - -
AC Characteristics
f
T- 100 - MHzTransition frequency
I
C = 50 mA,
V
CE = 10 V,
f
= 100 MHz
1) Pulse test: t ≤ 300µs, D = 2%
Semiconductor Group 2 1998-11-01
BCP 51M ... BCP 53M
3
Semiconductor Group Au -11-1998
DC current gain
h
FE =
f
(
I
C)
V
CE = 2V
10
EHP00261BCP 51...53
04
10mA
0
10
3
10
5
5
10
1
10
2
10
1
C
FE
h
Ι
3
10
2
10
C
100
5
25
C
-50
C
Total power dissipation
P
tot =
f
(
T
A*;
T
S)
* Package mounted on epoxy
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
200
400
600
800
1000
1200
1400
1600
mW
2000
P
tot
T
S
T
A
Permissible Pulse Load
P
totmax /
P
totDC =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
R
thJS =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
T
S
-1
10
0
10
1
10
2
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Semiconductor Group 3 1998-11-01
BCP 51M ... BCP 53M
4
Semiconductor Group Au -11-1998
Collector cutoff current
I
CBO =
f
(
T
A)
V
CB = 30V
0
10
EHP00262BCP 51...53
A
T
150
-1
4
10
Ι
CBO
nA
50 100
0
10
1
10
3
10
C
10
2
max
typ
Transition frequency
f
T =
f
(
I
C)
V
CE = 10 V
10
EHP00260BCP 51...53
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
f
MHz
Ι
Base-emitter saturation voltage
I
C =
f
(
V
BEsat),
h
FE = 10
0
10
EHP00263BCP 51...53
BEsat
V
0
4
10
Ι
C
mA
0.2
1
10
2
10
3
10
0.4 0.6 0.8 1.2V
C
100
25
C
-50
C
Collector-emitter saturation voltage
I
C =
f
(
V
CEsat),
h
FE = 10
0
10
EHP00264BCP 51...53
CEsat
V
0.4 V 0.8
0
10
1
10
2
4
10
5
5
Ι
C
mA
5
3
10
0.2 0.6
C
100
25
C
C
-50
Semiconductor Group 4 1998-11-01