DATA SH EET
Product data sheet
Supersedes data of 1997 Jun 02
1999 Apr 14
DISCRETE SEMICONDUCTORS
PZT2907A
PNP switching transistor
handbook, halfpage
M3D087
1999 Apr 14 2
NXP Semiconductors Product data sheet
PNP switching transistor PZT2907A
FEATURES
•High current (max. 600 mA)
•Low voltage (max. 60 V).
APPLICATIONS
•Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a SOT223 plastic package.
NPN complement: PZT2222A.
PINNING
PIN DESCRIPTION
1base
2, 4 collector
3emitter
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
123
MAM288
Top view
3
2, 4
1
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter − −60 V
VCEO collector-emitter voltage open base − −60 V
VEBO emitter-base vo ltage open collector − −5 V
ICcollector current (DC) − −600 mA
ICM peak collector current − −800 mA
IBM peak base current − −200 mA
Ptot total power dissipation Tamb ≤ 25 °C−1.15 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 Apr 14 3
NXP Semiconductors Pr oduct data shee t
PNP switching transistor PZT2907A
THERMAL CHARACTE RISTICS
Note
1. Device mounted on a pr inted-circuit board, single-s ided copper, tinplate d, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT2 23 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 106 K/W
Rth j-s thermal resistance from junction to soldering point 25 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = −50 V − −10 nA
IE = 0; VCB = −50 V; Tamb = 150 °C− −10 µA
IEBO emitter cut-off current IC = 0; VEB = −5 V − −50 nA
hFE DC current gain IC = −0.1 mA; VCE = −10 V 75 −
IC = −1 mA; VCE = −10 V 100 −
IC = −10 mA; VCE = −10 V 100 −
IC = −150 mA; VCE = −10 V; note 1 100 300
IC = −500 mA; VCE = −10 V; note 1 50 −
VCEsat collector-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1 − −400 mV
IC = −500 mA; IB = −50 mA; note 1 − −1.6 V
VBEsat base-emitt er saturation voltage IC = −150 mA; IB = −15 mA; note 1 − −1.3 V
IC = −500 mA; IB = −50 mA; note 1 − −2.6 V
Cccollector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz −8pF
Ceemitter cap a citance IC = ic = 0; VEB = −2 V; f = 1 MHz −30 pF
fTtransition freque ncy IC = −50 mA; VCE = −20 V;
f = 100 MHz; note 1 200 −MHz
Switching times (between 10% and 90% levels); (see Fig.2)
ton turn-on time ICon = −150 mA; IBon = −15 mA;
IBoff = 15 mA −40 ns
tddelay time −12 ns
trrise time −30 ns
toff turn-off time −365 ns
tsstorage time −300 ns
tffall time −65 ns
1999 Apr 14 4
NXP Semiconductors Pr oduct data shee t
PNP switching transistor PZT2907A
Fig.2 Test circuit for switching times.
handbook, full pagewidth
RC
R2
R1
DUT
MGD624
Vo
RB(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
V
BB
Vi
V
CC
Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = 3.5 V; VCC = −29.5 V.
Oscillosc ope input impedance Z i = 50 Ω.
1999 Apr 14 5
NXP Semiconductors Pr oduct data shee t
PNP switching transistor PZT2907A
PACKAGE OUTLINE
UNIT A1bpcDEe1HELpQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 97-02-28
99-09-13
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
P
lastic surface mounted package; collector pad for good heat transfer; 4 leads SOT22
3
1999 Apr 14 6
NXP Semiconductors Pr oduct data shee t
PNP switching transistor PZT2907A
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s) described in this document may have changed since this document was pub lis hed
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, au thorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or seve re
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any incons istency or conflict betw een information
in this document an d such terms and conditio ns, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document
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that is open for accept ance or the grant, c onveyance or
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described herein may be subject to export control
regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document d oes not form part o f an y q uot ation or co nt ra ct, is believed to be accurate a nd reliable and may be change d
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands 115002/00/03/pp7 Date of releas e: 1999 Apr 14 Document orde r number: 9397 750 05637
