PD - 90889B IRHM9150 IRHM93150 REPETITIVE AVALANCHE AND dv/dt RATED (R) HEXFET TRANSISTOR P-CHANNEL RAD HARD , RAD HARD HEXFET -100 Volt, 0.073 International Rectifier's P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 3 X 105 Rads (Si). Under identical pre- and postradiation test conditions, International Rectifier's P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the PChannel RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry. P-Channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number IRHM9150 IRHM93150 BVDSS -100V -100V n n n n n n n n n n n n n Radiation Hardened up to 3 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Parameter VGS EAS IAR EAR dv/dt TJ TSTG www.irf.com ID -22A -22A Features: Pre-Irradiation Absolute Maximum Ratings ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C RDS(on) 0.080 0.080 Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight IRHM9150, IRHM93150 -22 -14 - 88 150 1.2 20 500 -22 15 -23 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s 9.3 (typical) Units A W W/C V mJ A mJ V/ns o C g 1 10/23/98 IRHM9150, IRHM93150 Devices Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -100 -- -- V -- -0.093 -- V/C -- -- -2.0 11 -- -- -- -- -- -- -- -- 0.080 0.085 -4.0 -- -25 -250 BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.7 -100 100 200 35 48 40 170 190 190 -- LS Internal Source Inductance -- 8.7 -- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 4300 1100 310 -- -- -- V S( ) BVDSS A nA nC ns nH pF Test Conditions VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -14A VGS = -12V, ID = -22A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -14A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -22A VDS = Max Rating x 0.5 VDD = -50V, ID =-22A, RG = 2.35 Measured from drain lead, 6mm (0.25 in) from package to center of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad. Modified MOSFET symbol showingtheinternal inductances. VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) -- -- -- -- -22 -88 A VSD trr QRR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- -- -- -- -- -- -3.0 300 1.5 V ns C ton Forward Turn-On Time Test Conditions Modified MOSFET symbol showing the integra l reverse p-n junction rectifier. Tj = 25C, IS = -22A, VGS = 0V Tj = 25C, IF = -22A, di/dt -100A/s VDD -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthCS RthJA 2 Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max -- -- -- -- 0.83 0.21 -- -- 48 Units Test Conditions C/W Typical socket mount www.irf.com Radiation Characteristics IRHM9150, IRHM93150 Devices Radiation Performance of Rad Hard HEXFETs post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 3 x 105 Rads (Si) the Every manufacturing lot is tested in a low dose rate only parametric limit change is VGS(th) maximum. (total dose) environment per MIL-STD-750, test High dose rate testing may be done on a special remethod 1019 condition A. International Rectifier has quest basis using a dose rate up to 1 x 1012 Rads imposed a standard gate condition of -12 volts per (Si)/Sec (See Table 2). International Rectifier radianote 5 and a VDS bias condition equal to 80% of the tion hardened P-Channel HEXFETs are considered device rated voltage per note 6. Pre- and post- irradia- to be neutron-tolerant, as stated in MIL-PRF-19500 tion limits of the devices irradiated to 1 x 105 Rads (Si) Group D. are identical and are presented in Table1, column1.Post- International Rectifier radiation hardened P-Channel irradiation limits of the devices irradiated to 3 x 105 HEXFETs have been characterized in heavy ion Rads (Si) are presented in Table 1, column 2. The val- Single Event Effects (SEE) environments. Single ues in Table 1 will be met for either of the two low Event Effects characterization is shown in Table 3. dose rate test circuits that are used. Both pre- and IInternational Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier com prises three radiation environments. Table 1. Low Dose Rate IRHM9150 IRHM93150 Parameter Min BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage Table 2. High Dose Rate Test Conditions 100K Rads (Si) 300K Rads (Si) Units Max Min Max -100 -- -2.0 -4.0 -- -100 -- 100 -- -25 -- 0.080 -100 -2.0 -- -- -- -- -- -5.0 -100 100 -25 0.080 A VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS=0.8 x Max Rating, VGS=0V VGS = -12V, ID = -14A -- -3.0 V TC = 25C, IS = -22A,VGS = 0V -- -3.0 V nA 1011 Rads (Si)/sec 1012 Rads (Si)/sec Parameter VDSS Drain-to-Source Voltage IPP di/dt L1 Min Typ Max Min Typ Max Units Test Conditions -- -- -80 -- -- -80 V Applied drain-to-source voltage during gamma-dot -- -100 -- -- 100 -- A Peak radiation induced photo-current -- -- -800 -- -- -160 A/sec Rate of rise of photo-current 0.1 -- -- 0.5 -- -- H Circuit inductance required to limit di/dt Table 3. Single Event Effects Ion LET (Si) (MeV/mg/cm2) Ni 28 www.irf.com Fluence (ions/cm2) 1x 105 Range (m) ~41 VDSBias (V) VGS Bias (V) -100 5 3 IRHM9150, IRHM93150 Devices 100 Pre-Irradiation 100 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V -5.0V 20s PULSE WIDTH TJ = 25 C 10 1 10 -5.0V 20s PULSE WIDTH TJ = 150 C 10 1 100 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) Drain-to-Source Current (A) 100 TJ = 25 C - ID, TJ = 150 C V DS = -50V 20s PULSE WIDTH 10 5 6 7 8 9 10 - VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP ID = -22A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 6000 5000 Ciss 4000 3000 Coss 2000 1000 Crss 20 -VGS , Gate-to-Source Voltage (V) 7000 IRHM9150, IRHM93150 Devices ID = -22A VDS =-80V VDS =-50V VDS =-20V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 0 100 80 120 160 200 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) -II D , Drain Current (A) -ISD , Reverse Drain Current (A) 40 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) 100 TJ = 150 C 10 TJ = 25 C 1 0.0 V GS = 0 V 1.0 2.0 3.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 100us 1ms 10 10ms TC = 25 C TJ = 150 C Single Pulse 1 4.0 1 10 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHM9150, IRHM93150 Devices Pre-Irradiation RD VDS 24 VGS D.U.T. RG 20 - -ID , Drain Current (A) + 16 VDD -12V Pulse Width 1 s Duty Factor 0.1 % 12 Fig 10a. Switching Time Test Circuit 8 td(on) tr t d(off) tf VGS 4 10% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.01 t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHM9150, IRHM93150 Devices L VDS D .U .T RG IA S -20V -12V tp VD D A D R IV E R 0.0 1 15V Fig 12a. Unclamped Inductive Test Circuit IAS EAS , Single Pulse Avalanche Energy (mJ) 1200 ID -9.8A -14A BOTTOM -22A TOP 1000 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG -12V 12V .2F .3F -12V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHM9150, IRHM93150 Devices Pre-Irradiation Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = -25V, Starting TJ = 25C, EAS = [0.5 * L * (IL2) ] Peak IL = -22A, VGS = -12V, 25 RG 200 ISD -22A, di/dt -450A/s, VDD BVDSS, TJ 150C Suggested RG = 2.35 Pulse width 300 s; Duty Cycle 2% irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-Irrradiation) applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. All Pre-Irradiation and Post-Irradiation test conditions are identical to facilitate direct comparison for circuit applications. Case Outline and Dimensions -- TO-254AA .1 2 ( .0 0 5 ) 1 3 .8 4 ( .5 4 5 ) 1 3 .5 9 ( .5 3 5 ) 3 .7 8 ( .1 4 9 ) 3 .5 3 ( .1 3 9 ) -A - 2 0 .3 2 ( .8 0 0 ) 2 0 .0 7 ( .7 9 0 ) 17 .4 0 ( .6 8 5 ) 16 .8 9 ( .6 6 5 ) 3 1 .4 0 ( 1 .2 3 5 ) 3 0 .3 9 ( 1 .1 9 9 ) 1 2 -B - 6 .6 0 ( .26 0 ) 6 .3 2 ( .24 9 ) 1 .27 ( .0 5 0 ) 1 .02 ( .0 4 0 ) 1 3 .84 ( .5 4 5 ) 1 3 .59 ( .5 3 5 ) LEG END 1 - C O L L E C TO R W 2 - E M ITTE R 3 - G A TE 3 -C - 3X 3 .8 1 ( .1 5 0 ) 2X 1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5 ) .50 ( .0 20 ) .25 ( .0 10 ) 1 2 3 3 .8 1 ( .1 5 0 ) M C A M B M C N O TE S : 1 . D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5 M , 19 8 2 . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ). LEGEND 1- DRAIN 2- SOURCE 3- GATE LEGEND 1- DRAIN 2- SOURCE 3- GATE Conforms to JEDEC Outline TO-254AA Dimensions in Millimeters and ( Inches ) CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. 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