IRHM93150D - International Rectifier

P-CHANNEL

RAD HARD

PD - 90889B

Pre-Irradiation

REPETITIVE AVALANCHE AND dv/dt RATED IRHM9150

HEXFET

TRANSISTOR

10/23/98

IRHM93150

Product Summary

Part Number BVDSS RDS(on) ID

IRHM9150 -100V 0.080Ω-22A

IRHM93150 -100V 0.080Ω-22A

Features:

nRadiation Hardened up to 3 x 105 Rads (Si)

nSingle Event Burnout (SEB) Hardened

nSingle Event Gate Rupture (SEGR) Hardened

nGamma Dot (Flash X-Ray) Hardened

nNeutron Tolerant

nIdentical Pre- and Post-Electrical Test Conditions

nRepetitive Avalanche Rating

nDynamic dv/dt Rating

nSimple Drive Requirements

nEase of Paralleling

nHermetically Sealed

nElectrically Isolated

nCeramic Eyelets

www.irf.com 1

-100 V olt, 0.073ΩΩ

ΩΩ

Ω, RAD HARD HEXFET

Inter national Rectifier’s P-Channel RAD HARD technology

HEXFETs demonstrate e xcellent threshold voltage stability

and breakdown voltage stability at total radiation doses as

high as 3 X 105 Rads (Si). Under identical pre- and post-

radiation test conditions, International Rectifier’s P-Channel

RAD HARD HEXFETs retain identical electrical specifica-

tions up to 1 x 105 Rads (Si) total dose. No compensation in

gate drive circuitry is required. These devices are also ca-

pable of surviving transient ionization pulses as high as 1 x

1012 Rads (Si)/Sec, and return to nor mal operation within a

few microseconds. Single Event Effect (SEE) testing of In-

ternational Rectifier P-Channel RAD HARD HEXFETs has

demonstrated virtual immunity to SEE f ailure. Since the P-

Channel RAD HARD process utilizes International Rectifier’s

patented HEXFET technology, the user can expect the high-

est quality and reliability in the industry.

P-Channel RAD HARD HEXFET transistors also feature

all of the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of paralleling

and temperature stability of the electrical parameters. They

are well-suited for applications such as switching power sup-

plies, motor controls, inver ters, choppers, audio amplifiers

and high-energy pulse circuits in space and weapons

environments.

Absolute Maximum Ratings

Parameter IRHM9150, IRHM93150 Units

ID @ VGS = -12V, TC = 25°C Continuous Drain Current -22

ID @ VGS = -12V, TC = 100°C Continuous Drain Current -14

IDM Pulsed Drain Current - 88

PD @ TC = 25°C Max. Power Dissipation 150 W

Linear Derating Factor 1.2 W/°C

VGS Gate-to-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy 500 mJ

IAR Avalanche Current -22 A

EAR Repetitive Avalanche Energy 15 mJ

dv/dt Peak Diode Recover y dv/dt -23 V/ns

TJOperating Junction -55 to 150

TSTG Storage Temperature Range

Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s

Weight 9.3 (typical) g

IRHM9150, IRHM93150 Devices Pre-Irradiation

2www.irf.com

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BVDSS Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0mA

∆BVDSS/∆TJTemperature Coefficient of Breakdown — -0.093 — V/°C Reference to 25°C, ID = -1.0mA

Voltage

RDS(on) Static Drain-to-Source — — 0.080 VGS = -12V, ID = -14A

On-State Resistance — — 0.085 ΩVGS = -12V, ID = -22A

VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, I D = -1.0mA

gfs Forward Transconductance 11 — — S ( )V

DS > -15V, IDS = -14A 

IDSS Zero Gate Voltage Drain Current — — -25 VDS= 0.8 x Max Rating,VGS=0V

— — -250 VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V

IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V

QgTotal Gate Charge — — 200 VGS =-12V, ID = -22A

Qgs Gate-to-Source Charge — — 35 nC VDS = Max Rating x 0.5

Qgd Gate-to-Drain (‘Miller’) Charge — — 48

td(on) Tur n-On Delay Time — — 40 VDD = -50V, ID =-22A,

trRise Time — — 170 RG = 2.35Ω

td(off) Tur n-Off Delay Time — — 190

tfF all Time — — 190

LDInternal Drain Inductance — 8.7 —

LSInternal Source Inductance — 8.7 —

Ciss Input Capacitance — 4300 — VGS = 0V, VDS = -25V

Coss Output Capacitance — 1100 — pF f = 1.0MHz

Crss Reverse Transfer Capacitance — 310 —

Ω



Measured from dr ain lead,

6mm (0.25 in) from pac kage

to center of die.

Measured from source lead,

6mm (0.25 in) from pac kage

to source bonding pad.

Modified MOSFET symbol sho w-

ing the inter nal inductances .

µ A

Source-Drain Diode Ratings and Characteristics

Parameter Min Ty p Max Units Test Conditions

ISContinuous Source Current (Body Diode) — — -22 Modified MOSFET symbol showing the integral

ISM Pulse Source Current (Body Diode) — — -88 reverse p-n junction rectifier.

VSD Diode Forward Voltage — — -3.0 V Tj = 25°C, IS = -22A, VGS = 0V 

trr Reverse Recover y Time — — 300 ns Tj = 25°C, IF = -22A, di/dt ≤ -100A/µs

QRR Reverse Recover y Charge — — 1.5 µCV

DD ≤ -50V 

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + LD.

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

RthJC Junction-to-Case — — 0.83

RthCS Case-to-Sink — 0.21 — °C/W

RthJA Junction-to-Ambient — — 48 Typical socket mount

IRHM9150, IRHM93150 Devices

www.irf.com 3

Radiation P erformance of Rad Har d HEXFETs

Table 1. Low Dose Rate  IRHM9150 IRHM93150

Parameter 100K Rads (Si) 300K Rads (Si)

Units

Test Conditions 

Min Max Min Max

BVDSS Drain-to-Source Breakdown Voltage -100 — -100 — VVGS = 0V, ID = -1.0mA

VGS(th) Gate Threshold Voltage  -2.0 -4.0 -2.0 -5.0 VGS = VDS, ID = -1.0mA

IGSS Gate-to-Source Leakage Forward — -100 — -100 nA VGS = -20V

IGSS Gate-to-Source Leakage Reverse — 100 — 100 VGS = 20 V

IDSS Zero Gate Voltage Drain Current — -25 — -25 µA VDS=0.8 x Max Rating, VGS=0V

RDS(on)1 Static Drain-to-Source  — 0.080 — 0.080 ΩVGS = -12V, ID = -14A

On-State Resistance One

VSD Diode Forward Voltage  — -3.0 — -3.0 V TC = 25°C, IS = -22A,VGS = 0V

Radiation Characteristics

IInternational Rectifier Radiation Hardened HEXFETs

are tested to verify their hardness capability. The hard-

ness assurance program at International Rectifier com

prises three radiation environments.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MIL-STD-750, test

method 1019 condition A. International Rectifier has

imposed a standard gate condition of -12 volts per

note 5 and a VDS bias condition equal to 80% of the

device rated voltage per note 6. Pre- and post- irradia-

tion limits of the devices irradiated to 1 x 105 Rads (Si)

are identical and are presented in Table1, column1.P ost-

irradiation limits of the devices irradiated to 3 x 105

Rads (Si) are presented in Table 1, column 2. The val-

ues in Table 1 will be met for either of the two low

dose rate test circuits that are used. Both pre- and

post-irradiation performance are tested and specified

using the same drive circuitry and test conditions in

order to provide a direct comparison. It should be

noted that at a radiation level of 3 x 10 5 Rads (Si) the

only parametric limit change is VGS(th) maximum.

High dose rate testing may be done on a special re-

quest basis using a dose rate up to 1 x 1012 Rads

(Si)/Sec (See Table 2). Inter national Rectifier radia-

tion hardened P-Channel HEXFETs are considered

to be neutron-tolerant, as stated in MIL-PRF-19500

Group D.

Inter national Rectifier radiation hardened P-Channel

HEXFETs have been characterized in heavy ion

Single Event Effects (SEE) environments. Single

Event Effects characterization is shown in Table 3.

Table 2. High Dose Rate  1011 Rads (Si)/sec 1012 Rads (Si)/sec

Parameter Min Typ Max Min Typ Max Units Test Conditions

VDSS Drain-to-Source Voltage — — -80 — — -80 V Applied drain-to-source voltage during

gamma-dot

IPP — -100 — — 100 — A Peak radiation induced photo-current

di/dt — — -800 — — -160 A/µsec Rate of rise of photo-current

L10.1 — — 0.5 — — µH Circuit inductance required to limit di/dt

LET (Si) Fluence Range VDSBias VGS Bias

Ion (MeV/mg/cm2) (ions/cm2) (µm) (V) (V)

Ni 28 1x 105 ~41 -100 5

Table 3. Single Event Eff ects

IRHM9150, IRHM93150 Devices Pre-Irradiation

4www.irf.com

100

5 6 7 8 9 10

V = -50V

20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

J°

T = 150 C

J°

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1 10 100

20µs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

-15V

-12V

-10V

-9.0V

-8.0V

-7.0V

-6.0V

-5.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-5.0V

100

1 10 100

20µs PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

-15V

-12V

-10V

-9.0V

-8.0V

-7.0V

-6.0V

-5.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-5.0V

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

-12V

-22A

IRHM9150, IRHM93150 Devices

www.irf.com 5

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1 10 100

1000

2000

3000

4000

5000

6000

7000

-V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

040 80 120 160 200

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

-22A

V =-20V

V =-50V

V =-80V

100

0.0 1.0 2.0 3.0 4.0

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 150 C

J°

100

1000

1 10 100 1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T = 150 C

= 25 C

°°

-V , Drain-to-Source Voltage (V)

-I , Drain Current (A)I , Drain Current (A)

100us

1ms

10ms

Pre-Irradiation

IRHM9150, IRHM93150 Devices Pre-Irradiation

6www.irf.com

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

25 50 75 100 125 150

T , Case Temperature ( C)

-I , Drain Current (A)

0.001

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

1 2

JDM thJC C

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

VDS

-12V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

VDD

RGD.U.T.

VDS

90%

10%

VGS

d(on)

d(off)

IRHM9150, IRHM93150 Devices

www.irf.com 7

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

25 50 75 100 125 150

200

400

600

800

1000

1200

Starting T , Junction Temperature( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

-9.8A

-14A

-22A

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tpV

(

)

DSS

0.01

Ω

D.U.T

DRIVER A

15V

-20V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Charge

-12V

D.U.T. V

-3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

-12V

Pre-Irradiation

IRHM9150, IRHM93150 Devices Pre-Irradiation

8www.irf.com

Repetitive Rating; Pulse width limited by

maximum junction temperature.

Refer to current HEXFET reliability report.

@ VDD = -25V, Starting TJ = 25°C,

EAS = [0.5 * L * (IL2) ]

Peak IL = -22A, VGS = -12V, 25 ≤ RG ≤ 200Ω

ISD ≤ -22A, di/dt ≤ -450A/µs,

VDD ≤ BVDSS, TJ ≤ 150°C

Suggested RG = 2.35Ω

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

irradiation per MIL-STD-750, method 1019, condition A.

Case Outline and Dimensions — TO-254AA

3.78 ( .149 )

3.53 ( .139 )

-A-

13.84 ( .545 )

13.59 ( .535 ) 6.60 ( .260 )

6.32 ( .249 )

20.32 ( .800 )

20.07 ( .790 ) 13.84 ( .545 )

13.59 ( .535 )

-C-

1.14 ( .045 )

0.89 ( .035 ) 3.81 ( .150 )

1.27 ( .050 )

1.02 ( .040 )

-B- .12 ( .005 )

3.81 ( .150 )

1 2 3

17.40 ( .685 )

16.89 ( .665 )

31.40 ( 1.235 )

30.39 ( 1.199 )

NOTES:

1. D IMENS ION ING & TO LE RA NCIN G PE R A N S I Y14.5M, 1982.

2 . ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

.5 0 ( .0 2 0 ) M C A M B

.2 5 ( .0 1 0 ) M C

LEGEND

1 - COLLECT OR

2 - EMITT ER

3 - G ATE

Conforms to JEDEC Outline TO-254AA

Dimensions in Millimeters and ( Inches )

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Package containing beryllia shall not be ground, sandblasted,

machined, or have other operations performed on them which

will produce beryllia or beryllium dust. Further more, beryllium

oxide packages shall not be placed in acids that will produce

fumes containing beryllium.

LEGEND

1- DRAIN

2- SOURCE

3- GATE

LEGEND

1- DRAIN

2- SOURCE

3- GATE

1 2 3

Total Dose Irradiation with VGS Bias.

12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019, condition A.

Total Dose Irradiation with VDS Bias.

VDS = 0.8 rated BVDSS (pre-Irrradiation)

applied and VGS = 0 during irradiation per

MlL-STD-750, method 1019, condition A.

 This test is performed using a flash x-ray

source operated in the e-beam mode (energy

~2.5 MeV), 30 nsec pulse.

 All Pre-Irradiation and Post-Irradiation test

conditions are identical to facilitate direct

comparison for circuit applications.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936

http://www.irf.com/ Data and specifications subject to change without notice. 10/98