DZ23-V-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES * Dual silicon planar Zener diodes, common cathode 3 1 2 * The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is 5 %. Replace "C" with "B" for 2 % tolerance * The parameters are valid for both diodes in one case. VZ and Rzj of the two diodes in one case is 5 % * AEC-Q101 qualified PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 2.7 to 51 V Test current IZT 5 mA VZ specification Pulse current Int. construction Dual * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY DZ23-V-series DZ23-V-series-GS18 10 000 (8 mm tape on 13" reel) 10 000 DZ23-V-series DZ23-V-series-GS08 3000 (8 mm tape on 7" reel) 15 000 PACKAGE PACKAGE NAME SOT-23 WEIGHT 8.8 mg MOLDING COMPOUND MOISTURE SENSITIVITY FLAMMABILITY RATING LEVEL UL 94 V-0 MSL level 1 (according J-STD-020) SOLDERING CONDITIONS 260 C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation Device on fiberglass substrate, see layout on page 6 Ptot 300 mW Thermal resistance junction to ambient air Device on fiberglass substrate, see layout on page 6 RthJA 420 K/W Tj 150 C Tstg - 65 to + 150 C IZ Ptot/VZ mA Junction temperature Storage temperature range Zener current Rev. 1.8, 02-Feb-12 Document Number: 85765 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DZ23-V-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V IZT2 mA REVERSE VOLTAGE DYNAMIC RESISTANCE f = 1 kHz TEMPERATURE COEFFICIENT OF ZENER VOLTAGE VR at IR ZZ at IZT1 ZZK at IZT2 VZ at IZT1 10-4/C V nA MIN. NOM. MAX. MAX. MAX. MIN. MAX. DZ23C2V7-V V1 2.5 2.7 2.9 5 1 MAX. - - 75 (< 83) < 500 -9 -4 DZ23C3V0-V V2 2.8 3.0 3.2 5 1 - - 80 (< 95) < 500 -9 -3 DZ23C3V3-V V3 3.1 3.3 3.5 5 1 - - 80 (< 95) < 500 -8 -3 DZ23C3V6-V V4 3.4 3.6 3.8 5 1 - - 80 (< 95) < 500 -8 -3 DZ23C3V9-V V5 3.7 3.9 4.1 5 1 - - 80 (< 95) < 500 -7 -3 DZ23C4V3-V V6 4 4.3 4.6 5 1 - - 80 (< 95) < 500 -6 -1 DZ23C4V7-V V7 4.4 4.7 5 5 1 - - 70 (< 78) < 500 -5 2 DZ23C5V1-V V8 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 -3 4 DZ23C5V6-V V9 5.2 5.6 6 5 1 >1 100 10 (< 40) < 400 -2 6 DZ23C6V2-V V10 5.8 6.2 6.6 5 1 >2 100 4.8 (< 10) < 200 -1 7 DZ23C6V8-V V11 6.4 6.8 7.2 5 1 >3 100 4.5 (< 8) < 150 2 7 DZ23C7V5-V V12 7 7.5 7.9 5 1 >5 100 4 (< 7) < 50 3 7 DZ23C8V2-V V13 7.7 8.2 8.7 5 1 >6 100 4.5 (< 7) < 50 4 7 DZ23C9V1-V V14 8.5 9.1 9.6 5 1 >7 100 4.8 (< 10) < 50 5 8 DZ23C10-V V15 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 5 8 DZ23C11-V V16 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 5 9 DZ23C12-V V17 11.4 12 12.7 5 1 >9 100 7 (< 20) < 90 6 9 DZ23C13-V V18 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 7 9 DZ23C15-V V19 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 7 9 DZ23C16-V V20 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 8 9.5 DZ23C18-V V21 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 8 9.5 DZ23C20-V V22 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 8 10 DZ23C22-V V23 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 8 10 DZ23C24-V V24 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 8 10 DZ23C27-V V25 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 8 10 DZ23C30-V V26 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 8 10 DZ23C33-V V27 31 33 35 5 1 > 25 100 40 (< 80) < 250 8 10 DZ23C36-V V28 34 36 38 5 1 > 27 100 40 (< 90) < 250 8 10 DZ23C39-V V29 37 39 41 5 1 > 29 100 50 (< 90) < 300 10 12 DZ23C43-V V30 40 43 46 5 1 > 32 100 60 (< 100) < 700 10 12 DZ23C47-V V31 44 47 50 5 1 > 35 100 70 (< 100) < 750 10 12 DZ23C51-V V32 48 51 54 5 1 > 38 100 70 (< 100) < 750 10 12 Note (1) Tested with pulses t = 5 ms p Rev. 1.8, 02-Feb-12 Document Number: 85765 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DZ23-V-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V IZT2 mA REVERSE VOLTAGE DYNAMIC RESISTANCE f = 1 kHz TEMPERATURE COEFFICIENT OF ZENER VOLTAGE VR at IR ZZ at IZT1 ZZK at IZT2 VZ at IZT1 10-4/C V nA MIN. NOM. MAX. MAX. MAX. MIN. MAX. DZ23B2V7-V V1 2.65 2.7 2.75 5 1 MAX. - - 75 (< 83) < 500 -9 -4 DZ23B3V0-V V2 2.94 3.0 3.06 5 1 - - 80 (< 95) < 500 -9 -3 DZ23B3V3-V V3 3.23 3.3 3.37 5 1 - - 80 (< 95) < 500 -8 -3 DZ23B3V6-V V4 3.53 3.6 3.67 5 1 - - 80 (< 95) < 500 -8 -3 DZ23B3V9-V V5 3.82 3.9 3.98 5 1 - - 80 (< 95) < 500 -7 -3 DZ23B4V3-V V6 4.21 4.3 4.39 5 1 - - 80 (< 95) < 500 -6 -1 DZ23B4V7-V V7 4.61 4.7 4.79 5 1 - - 70 (< 78) < 500 -5 2 DZ23B5V1-V V8 5 5.1 5.2 5 1 > 0.8 100 30 (< 60) < 480 -3 4 DZ23B5V6-V V9 5.49 5.6 5.71 5 1 >1 100 10 (< 40) < 400 -2 6 DZ23B6V2-V V10 6.08 6.2 6.32 5 1 >2 100 4.8 (< 10) < 200 -1 7 DZ23B6V8-V V11 6.66 6.8 6.94 5 1 >3 100 4.5 (< 8) < 150 2 7 DZ23B7V5-V V12 7.35 7.5 7.65 5 1 >5 100 4 (< 7) < 50 3 7 DZ23B8V2-V V13 8.04 8.2 8.36 5 1 >6 100 4.5 (< 7) < 50 4 7 DZ23B9V1-V V14 8.92 9.1 9.28 5 1 >7 100 4.8 (< 10) < 50 5 8 DZ23B10-V V15 9.8 10 10.2 5 1 > 7.5 100 5.2 (< 15) < 70 5 8 DZ23B11-V V16 10.8 11 11.2 5 1 > 8.5 100 6 (< 20) < 70 5 9 DZ23B12-V V17 11.8 12 12.2 5 1 >9 100 7 (< 20) < 90 6 9 DZ23B13-V V18 12.7 13 13.3 5 1 > 10 100 9 (< 25) < 110 7 9 DZ23B15-V V19 14.7 15 15.3 5 1 > 11 100 11 (< 30) < 110 7 9 DZ23B16-V V20 15.7 16 16.3 5 1 > 12 100 13 (< 40) < 170 8 0.5 DZ23B18-V V21 17.6 18 18.4 5 1 > 14 100 18 (< 50) < 170 8 0.5 DZ23B20-V V22 19.6 20 20.4 5 1 > 15 100 20 (< 50) < 220 8 10 DZ23B22-V V23 21.6 22 22.4 5 1 > 17 100 25 (< 55) < 220 8 10 DZ23B24-V V24 23.5 24 24.5 5 1 > 18 100 28 (< 80) < 220 8 10 DZ23B27-V V25 26.5 27 27.5 5 1 > 20 100 30 (< 80) < 250 8 10 DZ23B30-V V26 29.4 30 30.6 5 1 > 22.5 100 35 (< 80) < 250 8 10 DZ23B33-V V27 32.3 33 33.7 5 1 > 25 100 40 (< 80) < 250 8 10 DZ23B36-V V28 35.3 36 36.7 5 1 > 27 100 40 (< 90) < 250 8 10 DZ23B39-V V29 38.2 39 39.8 5 1 > 29 100 50 (< 90) < 300 10 12 DZ23B43-V V30 42.1 43 43.9 5 1 > 32 100 60 (< 100) < 700 10 12 DZ23B47-V V31 46.1 47 47.9 5 1 > 35 100 70 (< 100) < 750 10 12 DZ23B51-V V32 50 51 52 5 1 > 38 100 70 (< 100) < 750 10 12 Note (1) Tested with pulses t = 5 ms p Rev. 1.8, 02-Feb-12 Document Number: 85765 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DZ23-V-Series www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) mA 103 100 TJ = 25 C 102 IF 5 4 10 10-1 10 -2 10 -3 3 rzj TJ = 100 C 1 33 2 27 22 10 TJ = 25 C 18 15 5 4 12 3 10 10-4 2 10-5 0 1 0.2 0.4 0.6 0.8 1V VF 18114 6.8/8.2 6.2 0.1 2 1 5 2 5 18119 10 IZ 2 5 100 mA Fig. 4 - Dynamic Resistance vs. Zener Current Fig. 1 - Forward Characteristics mW 500 103 Tj = 25 C 7 5 4 400 Rzj Ptot 47 + 51 43 39 36 3 2 300 102 200 7 5 4 3 100 2 0 0 100 Tamb 18115 10 0.1 200 C Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature 3 4 5 2 3 4 5 IZ K/W 103 TJ = 25 C 5 4 3 2 1 10 mA Fig. 5 - Dynamic Resistance vs. Zener Current 1000 rzj 2 18120 Rzth Rzth = RthA x VZ x 5 4 3 2 VZ Tj 102 100 5 4 3 5 4 3 2 2 10 2.7 3.6 4.7 5.1 10 5.6 1 5 4 3 2 1 0.1 18117 2 5 1 2 5 10 2 5 100 mA IZ Fig. 3 - Dynamic Resistance vs. Zener Current Rev. 1.8, 02-Feb-12 5 4 3 negative 2 1 18121 2 positive 3 4 5 10 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 6 - Thermal Differential Resistance vs. Zener Voltage Document Number: 85765 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DZ23-V-Series www.vishay.com Vishay Semiconductors 100 mV/C 100 7 IZ = 5 mA 5 4 Rzj VZ Tj 3 2 80 60 10 7 40 5 4 3 20 2 Tj = 25 C IZ = 5 mA 1 1 2 3 4 5 10 2 3 4 5 18122 0 100 V 0 VZ Fig. 7 - Dynamic Resistance vs. Zener Voltage 60 40 80 100 V VZ Fig. 10 - Temperature Dependence of Zener Voltage vs. Zener Voltage mV/C 25 VZ Tj 20 18125 V 9 8 20 5 mA IZ = 1 mA 20 mA 15 7 VZ 51 6 5 10 43 4 36 3 5 2 0 1 0 -5 1 2 3 4 5 10 2 3 4 5 100 V VZ 18123 IZ = 2 mA -1 0 20 40 60 18126 Fig. 8 - Temperature Dependence of Zener Voltage vs. Zener Voltage 25 0.7 VZ at IZ = 5 mA V 1.6 15 1.2 VZ 0.5 8 0.4 7 0.3 0.2 6.2 5.9 0.1 5.6 0 1 0.8 0.6 0.4 0.2 0 5.1 -1 3.6 - 0.2 0 18124 20 40 60 80 4.7 100 120 140 C Tj Fig. 9 - Change of Zener Voltage vs. Junction Temperature Rev. 1.8, 02-Feb-12 VZ = Rzth x IZ 1.4 10 0.6 VZ 140 C Fig. 11 - Change of Zener Voltage vs. Junction Temperature V 0.8 80 100 120 Tj - 0.2 - 0.4 18127 1 2 3 4 5 10 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener voltage Document Number: 85765 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DZ23-V-Series www.vishay.com V 5 Vishay Semiconductors mA 30 VZ = Rzth x IZ 10 12 Tj = 25 C 4 lZ VZ 3 15 20 18 IZ = 5 mA 22 2 1 0 20 40 60 80 0 100 V 0 VZ 18128 Tj = 25 C 10 20 18112 30 mA 10 6.8 3.3 4.7 40 Tj = 25 C 3.9 5.6 2.7 lZ 40 V VZ Fig. 15 - Breakdown Characteristics Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener voltage 8 8.2 lZ 30 6 20 4 Test current IZ 5 mA 10 33 36 IZ = 2 mA 0 mA 50 27 Test 10 current IZ 5 mA Test current IZ 5 mA 39 51 43 47 2 0 0 0 1 2 3 4 5 6 7 9 10 V 8 0 VZ 18111 10 20 30 40 50 60 70 80 90 100 V VZ 18113 Fig. 14 - Breakdown Characteristics Fig. 16 - Breakdown Characteristics LAYOUT FOR RthJA TEST Thickness: fiberglass 0.059" (1.5 mm) Copper leads 0.012" (0.3 mm) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 15 (0.59) 2 (0.8) 0.8 (0.03) 5 (0.2) 1.5 (0.06) 5.1 (0.2) Rev. 1.8, 02-Feb-12 17451 Document Number: 85765 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DZ23-V-Series www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) 0 t o8 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.5 (0.020) 0.45 (0.018) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) Foot print recommendation: 1 (0.039) 0.9 (0.035) 0.9 (0.035) 0.7 (0.028) 2 (0.079) 1.43 (0.056) 1.20 (0.047) 0.45 (0.018) 0.35 (0.014) 1 (0.039) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 Rev. 1.8, 02-Feb-12 Document Number: 85765 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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