TECHNICAL DATA
NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/262
Devices Qualified Level
2N1722 2N1724
JAN
JANTX
MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 175 Vdc
Emitter-Base Voltage VEBO 10 Vdc
Collector Current IC 5.0 Adc
Total Power Dissipation @ TA = +250C(1)
@ TC = +1000C (2) PT 3.0
50 W
W
Temperature Range: Operating
Storage Junction TOP,
Tstg 175
-65 to +200 0C
1) Derate linearly 20 mW/0C for TA between +250C and +1750C
2) Derate linearly 666 mW/0C for TC between +1000C and +1750C
TO-61*
2N1724
TO-53*
2N1722
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc V(BR)CEO 80 Vdc
Emitter-Base Breakdown Voltage
IE = 10 mAdc V(BR)EBO 10 Vdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc ICES 300 µAdc
Collector-Base Cutoff Current
VCB = 175 Vdc ICBO 5.0 mAdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc IEBO 400 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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2N1722, 2N1724 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 2.0 Adc, VCE = 15 Vdc
IC = 5.0 Adc, VCE = 15 Vdc
IC = 100 mAdc, VCE = 15 Vdc
hFE
30
15
30
120
Collector-Emitter Saturation Voltage
IC = 2.0 Adc, IB = 200 mAdc VCE(sat) 0.6 Vdc
Base-Emitter Saturation Voltage
IC = 2.0 Adc, IB = 200 mVdc VBE(sat) 1.2 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 500 mAdc, VCE = 15 Vdc; f = 10 MHz
hfe
1.0
5.0
Output Capacitance
VCB = 15 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 550 pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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