Green DMP2012SN P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data * * * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) ESD Protected Gate Qualified to AEC-Q101 Standards for High Reliability Case: SC59 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.014 grams (approximate) * * * * Drain SC59 D Gate ESD Protected Gate Protection Diode TOP VIEW S G Source TOP VIEW Ordering Information (Note 4) Part Number DMP2012SN-7 Notes: Case SC59 Packaging 3000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information PS1 Date Code Key Year Code Month Code 2006 T Jan 1 2007 U Feb 2 DMP2012SN Document number: DS30790 Rev. 5 - 2 Mar 3 PS1 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September 2008 V Apr 4 May 5 2009 W Jun 6 1 of 5 www.diodes.com 2010 X Jul 7 Aug 8 2011 Y Sep 9 Oct O 2012 Z Nov N Dec D July 2012 (c) Diodes Incorporated DMP2012SN Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Steady State Pulsed Drain Current (Note 6) Symbol VDSS VGSS ID IDM Value -20 12 -0.7 -2.8 Unit V V A A Symbol PD RJA TJ, TSTG Value 500 250 -65 to +150 Unit mW C/W C Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 -10 10 V A A VGS = 0V, ID = 250A VDS = -20V, VGS = 0V VGS = 12V, VDS = 0V VGS(th) -0.5 RDS (ON) -1.2 0.30 0.50 V Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time |Yfs| VSD 0.23 0.37 1.5 -0.8 -1.1 S V VDS = VGS, ID = -250A VGS = -4.5V, ID = -0.4A VGS = -2.5V, ID = -0.4A VDS = -10V, ID = 0.4A VGS = 0V, IS = -0.7A Ciss Coss Crss 180 120 50 pF pF pF VDS = -10V, VGS = 0V f = 1.0MHz tD(ON) tD(OFF) tr tf 5 55 20 70 ns ns ns ns VDD = -10V, ID = -0.4A, VGS = -5.0V, RGEN = 50 Notes: Test Condition 5. Device mounted on FR-4 PCB. 6. Pulse width 10S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. DMP2012SN Document number: DS30790 Rev. 5 - 2 2 of 5 www.diodes.com July 2012 (c) Diodes Incorporated DMP2012SN 3 3 -5V 2.5 -4.5V -3.5V -3V -4V 2 VDS = 10V -2.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 2.5 TA = 25C 2 1.5 1.5 -2V 1 0.5 1 TJ = 25C 0.5 VGS = -1.5V TJ = 125C 0 0.5 1 1.5 2 2.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 3 0 1 1.5 2 2.5 -VGS, Gate-Source Voltage(V) Figure 2 Typical Transfer Characteristics 3 0.4 ID = 0.5A 0.2 TJ = 25C RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 0.6 ID = 1.0A 0 0.5 1 0.8 VGS = -4.5V VGS = -10V 0.1 0 2 4 6 8 -VGS, GATE-SOURCE VOLTAGE (V) Figure 3 On-Resistance vs. Gate Voltage 10 0 0.8 0.5 1 1.5 2 2.5 -ID, DRAIN CURRENT (A) Figure 4 On-Resistance vs. Drain Current 3 1.4 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () TJ = -55C 0 0 0.6 ID = -0.7A -0.4A 0.4 VGS = -2.5V ID = -0.7A 0.2 VGS = -4.5V 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMP2012SN Document number: DS30790 Rev. 5 - 2 3 of 5 www.diodes.com VDS = 10V ID = 1mA 1.2 1 0.8 0.6 0.4 0.2 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (C) Figure 6 Gate Threshold Voltage vs. Temperature July 2012 (c) Diodes Incorporated DMP2012SN 1,000 f = 1MHz VGS = 0V TA = 25C 2.5 C, CAPACITANCE (pF) IDR, REVERSE DRAIN CURRENT (A) 3 2 1.5 1 Ciss Coss 100 Crss 0.5 0 10 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 7 Reverse Drain Current vs. Source-Drain Voltage 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 8 Typical Total Capacitance 20 Package Outline Dimensions A SC59 Min Max Typ 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 G 1.90 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 N 0.70 0.80 0.75 0 8 All Dimensions in mm Dim A B C G H K M N J L D Suggested Pad Layout Dimensions Value (in mm) Z 3.4 X 0.8 Y 1.0 2.4 C 1.35 E Y Z C X DMP2012SN Document number: DS30790 Rev. 5 - 2 E 4 of 5 www.diodes.com July 2012 (c) Diodes Incorporated DMP2012SN IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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