DMP2012SN
Document number: DS30790 Rev. 5 - 2 1 of 5
www.diodes.com July 2012
© Diodes Incorporated
DMP2012SN
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• ESD Protected Gate
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SC59
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.014 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMP2012SN-7 SC59 3000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes In corpor ated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free .
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012
Code T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Green
e3
SC59
TOP VIEW TOP VIEW
Source
Gate
Protection
Diode
Gate
Drain
D
GS
ESD Protected
PS1 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
PS1
YM
DMP2012SN
Document number: DS30790 Rev. 5 - 2 2 of 5
www.diodes.com July 2012
© Diodes Incorporated
DMP2012SN
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS ±12 V
Drain Current (Note 5) Steady State ID -0.7 A
Pulsed Drain Current (Note 6) IDM -2.8 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) PD 500 mW
Thermal Resistance, Junction to Ambient R
θ
JA 250 °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS -20 ⎯ ⎯ V VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -10 µA VDS = -20V, VGS = 0V
Gate-Body Leakage IGSS ⎯ ⎯ ±10 µA VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
-0.5 ⎯ -1.2 V VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance RDS (ON) ⎯ 0.23
0.37 0.30
0.50 Ω VGS = -4.5V, ID = -0.4A
VGS = -2.5V, ID = -0.4A
Forward Transfer Admittance |Yfs| ⎯ 1.5 ⎯ S VDS = -10V, ID = 0.4A
Diode Forward Voltage (Note 7) VSD ⎯ -0.8 -1.1 V VGS = 0V, IS = -0.7A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ 180 ⎯ pF VDS = -10V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ⎯ 120 ⎯ pF
Reverse Transfer Capacitance Crss ⎯ 50 ⎯ pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD
(
ON
)
⎯ 5 ⎯ ns VDD = -10V, ID = -0.4A,
VGS = -5.0V, RGEN = 50Ω
Turn-Off Delay Time tD
(
OFF
)
⎯ 55 ⎯ ns
Turn-On Rise Time t
r
⎯ 20 ⎯ ns
Turn-Off Fall Time tf ⎯ 70 ⎯ ns
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width ≤10µS, Duty Cycle ≤1%.
7. Short duration pulse test used to minimize self-heating effect.
DMP2012SN
Document number: DS30790 Rev. 5 - 2 3 of 5
www.diodes.com July 2012
© Diodes Incorporated
DMP2012SN
0
0.5
1
1.5
2
2.5
3
0 0.5 1 1.5 2 2.5 3
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1 Typical Out put Characteristics
-I
D
, D
R
AIN
C
U
R
R
EN
T
(A )
T = 25°C
A
-3.5V
-3V
-2.5V
V = -1.5V
GS
-2V
-5V
-4V
-4.5V
0
0.5
1
1.5
2
2.5
3
0 0.5 1 1.5 2 2.5 3
-V , Gate-Source Vo lt age(V)
GS
Fi gur e 2 Typi c al Tran sfer C har a ct eristic s
-I
D
, D
R
AI
N
C
U
R
R
E
N
T
(A)
V = 10V
DS
T = 25°C
J
T= 125°C
J
T= -55°C
J
0
0.2
0.4
0.6
0.8
0246810
-V , GATE-SOURCE VOLTAGE (V)
GS
Fig ur e 3 On - R esistance vs. Gate Vo ltage
R
ON-RESISTANCE ( )
DS(ON)
, S
T
A
T
I
C
D
R
AI
N
-S
O
U
R
C
E
Ω
I = 0.5A
D
I = 1.0A
D
0.1
1
0 0.5 1 1.5 2 2.5 3
-I , DRAIN CURRENT (A)
D
Figure 4 On-Resistance vs. Drain Current
R
, S
T
A
T
I
C
D
R
AIN-S
O
U
R
C
E
ON-RESIST ANCE ( )
DS(ON)
Ω
T = 25°C
J
V = -10V
GS
V = -4.5V
GS
0
0.2
0.4
0.6
0.8
-50 0 50 100 150
T , AMBIENT TEMPERA TURE (°C)
A
Figure 5 On-Resistance V a riation with Temperature
R
, S
T
A
T
I
C
D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE ( )
DS(ON)
Ω
V = -2.5V
GS
V = -4.5V
GS
I = -0.7A
D
I = -0.7A
D
-0.4A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50 0 50 100 150
T , AMBIENT TEMPERAT URE (°C)
A
Figure 6 Ga t e Threshold Voltage vs. Temperature
V, G
A
TE TH
R
ESH
O
LD V
O
LT
A
GE (V)
GS(TH)
V = 10V
I = 1mA
DS
D
DMP2012SN
Document number: DS30790 Rev. 5 - 2 4 of 5
www.diodes.com July 2012
© Diodes Incorporated
DMP2012SN
0
0.5
1
1.5
2
2.5
3
0 0.2 0.4 0.6 0.8 1
V , SOURCE-DRAIN VOLT AGE (V)
SD
Fig ur e 7 Re ver se Drai n C ur r ent vs. S our ce-Drai n Volt age
I,
R
EVE
R
SE D
R
A
IN
C
U
R
R
ENT (
A
)
DR
10
100
1,000
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 8 Typical Total Capacitance
C
,
C
A
P
A
C
I
T
A
N
C
E (pF)
f = 1MHz
V= 0V
GS
T = 25°C
A
C
rss
C
oss
C
iss
Package Outline Dimensions
Suggested Pad Layout
SC59
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D - - 0.95
G - - 1.90
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
N 0.70 0.80 0.75
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 3.4
X 0.8
Y 1.0
C 2.4
E 1.35
A
M
JL
D
BC
H
K
G
N
X E
Y
C
Z
DMP2012SN
Document number: DS30790 Rev. 5 - 2 5 of 5
www.diodes.com July 2012
© Diodes Incorporated
DMP2012SN
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
