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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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©2015 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGH60N60UFDTU_F085 Rev.1.0
FGH60N60UFDTU_F085 — 600V, 60A Field Stop IGBT
April 2015
Absolute Maximum Ratings
Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 600 V
VGES
Gate to Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
IC
Collector Current @ TC = 25oC120 A
Collector Current @ TC = 100oC60 A
ICM (1) Pulsed Collector Current @ TC = 25oC 180 A
PD
Maximum Power Dissipation @ TC = 25oC298 W
Maximum Power Dissipation @ TC = 100oC119 W
TJ Operating Junction Temperature -55 to +150 oC
Tstg Storage Temperature Range -55 to +150 oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Notes:
1: Repetitive test , Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Parameter Typ. Unit
RθJC(IGBT) Thermal Resistance, Junction to Case 0.33 oC/W
RθJC(Diode) Thermal Resistance, Junction to Case 1.1 oC/W
RθJA Thermal Resistance, Junction to Ambient 40 oC/W
FGH60N60UFDTU_F085
600V, 60A Field Stop IGBT
G
E
C
E
C
G
COLLECTOR
(FLANGE)
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 60 A
• High Input Impedance
• Fast Switching
•RoHS Compliant
• Qualified to Automotive Requirements of AEC-Q101
Applications
• Automotive chargers, Converters, High Voltage Auxiliaries
• Inverters, PFC, UPS
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Automo-
tive Chargers, Inverter, and other applications where low con-
duction and switching losses are essential.
2www.fairchildsemi.com
FGH60N60UFDTU_F085 Rev.1.0
FGH60N60UFDTU_F085 — 600V, 60A Field Stop IGBT
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGH60N60UFDTU_F085 FGH60N60UFD TO-247 Tube N/A N/A 30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA600 - - V
ΔBVCES
/ ΔTJ
Temperature Coefficient of Breakdown
Voltage VGE = 0 V, IC = 250 μA-0.67 -V/oC
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 μA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 μA, VCE = VGE 4.0 5.0 6.5 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 60 A, VGE = 15 V -1.8 2.9 V
IC = 60 A, VGE = 15 V,
TC = 125oC-2.1 - V
Dynamic Characteristics
Cies Input Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
- 2540 -pF
Coes Output Capacitance - 330 -pF
Cres Reverse Transfer Capacitance -110 -pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 400 V, IC = 60 A,
RG = 5 Ω, VGE = 15 V,
Inductive Load, TC = 25oC
- 29 - ns
trRise Time -60 -ns
td(off) Turn-Off Delay Time - 138 - ns
tfFall Time -28 80 ns
Eon Turn-On Switching Loss -2.47 -mJ
Eoff Turn-Off Switching Loss -0.81 -mJ
Ets Total Switching Loss -3.28 -mJ
td(on) Turn-On Delay Time
VCC = 400 V, IC = 60 A,
RG = 5 Ω, VGE = 15 V,
Inductive Load, TC = 125oC
- 28 - ns
trRise Time -55 -ns
td(off) Turn-Off Delay Time -147 - ns
tfFall Time -71 -ns
Eon Turn-On Switching Loss -3.01 -mJ
Eoff Turn-Off Switching Loss -1.21 -mJ
Ets Total Switching Loss -4.22 -mJ
QgTotal Gate Charge
VCE = 400 V, IC = 60 A,
VGE = 15 V
- 192 -nC
Qge Gate to Emitter Charge - 24 - nC
Qgc Gate to Collector Charge -102 -nC
3www.fairchildsemi.com
FGH60N60UFDTU_F085 Rev.1.0
FGH60N60UFDTU_F085 — 600V, 60A Field Stop IGBT
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Units
VFM Diode Forward Voltage IF = 30 A TC = 25oC - 1.70 2.6 V
TC = 125oC - 1.54 -
trr Diode Reverse Recovery Time
IF = 30 A, diF/dt = 200 A/μs
TC = 25oC - 76 -ns
TC = 125oC - 242 -
Qrr Diode Reverse Recovery Charge TC = 25oC - 208 -nC
TC = 125oC - 1162 -
4www.fairchildsemi.com
FGH60N60UFDTU_F085 Rev.1.0
FGH60N60UFDTU_F085 — 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
02468
0
30
60
90
120
150
180 20V
TC = 25oC
15V 12V
10V
VGE = 8V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
02468
0
30
60
90
120
150
180 20V
TC = 125oC
15V
12V
10V
VGE = 8V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
012345
0
30
60
90
120
150
180
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
24681012
0
30
60
90
120
150
180
Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Gate-Emitter Voltage,VGE [V]
25 50 75 100 125
1
2
3
4
120A
60A
IC = 30A
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Collector-EmitterCase Temperature, TC [oC]
3 6 9 121518
0
4
8
12
16
20
IC = 30A
60A
120A
Common Emitter
TC = -40oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
5www.fairchildsemi.com
FGH60N60UFDTU_F085 Rev.1.0
FGH60N60UFDTU_F085 — 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
Figure 11. SOA Characteristics Figure 12. Turn off Switching SOA
Characteristics
3 6 9 121518
0
4
8
12
16
20
120A
IC = 30A
60A
Common Emitter
TC = 125oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
3 6 9 121518
0
4
8
12
16
20
IC = 30A
60A
120A
Common Emitter
TC = 25oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
0.1 1 10 30
0
2000
4000
6000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
Coes
Cies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
0 50 100 150 200
0
3
6
9
12
15
Common Emitter
TC = 25oC
300V
200V
VCC = 100V
Gate-Emitter Voltage, VGE [V]
Gate Charge, Qg [nC]
1 10 100 1000
0.01
0.1
1
10
100
500
1ms 10 ms
DC
*Notes: Single Nonrepetitive
Pulse TC= 25OC
Curves must be derated linearly
with increase in temperature
10μs
100μs
Collector Current, Ic [A]
Collector-Emitter Voltage, VCE [V]
1 10 100 1000
1
10
100
300
Safe Operating Area
VGE = 15V, TC = 125oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
6www.fairchildsemi.com
FGH60N60UFDTU_F085 Rev.1.0
FGH60N60UFDTU_F085 — 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
Figure 15. Turn-on Characteristics vs. Figure 16. Turn-off Characteristics vs.
Collector Current Collector Current
Figure 17. Switching Loss vs. Gate Resistance Figure 18. Switching Loss vs. Collector Current
0 1020304050
10
100
300
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
td(on)
tr
Switching Time [ns]
Gate Resistance, RG [Ω]
0 1020304050
10
100
1000
6000 Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
td(off)
tf
Switching Time [ns]
Gate Resistance, RG [Ω]
0 20406080100120
10
100
500 Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC
tr
td(on)
Switching Time [ns]
Collector Current, IC [A]
0 20 40 60 80 100 120
10
100
600
Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC
td(off)
tf
Switching Time [ns]
Collector Current, IC [A]
0 1020304050
0.1
1
10
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
Eon
Eoff
Switching Loss [mJ]
Gate Resistance, RG [Ω]
0 20 40 60 80 100 120
0.1
1
10
20
Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC
Eon
Eoff
Switching Loss [mJ]
Collector Current, IC [A]
7www.fairchildsemi.com
FGH60N60UFDTU_F085 Rev.1.0
FGH60N60UFDTU_F085 — 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristics Figure 20. Reverse Current
Figure 21. Stored Charge Figure 22. Reverse Recovery Time
Figure 23. Transient Thermal Impedance of IGBT
01234
1
10
100
200
TJ = 75oC
TJ = 25oC
TC = 25oC
TC = 125oC
TC = 75oC
TJ = 125oC
Forward Voltage, VF [V]
Forward Current, IF [A]
0 200 400 600
0.01
0.1
1
10
100
500
TJ = 25oC
TJ = 75oC
TJ = 125oC
Reverse Currnet, IR [uA]
Reverse Voltage, VR [V]
5204060
50
100
150
200
250
TC = 25oC
200A/μs
di/dt = 100A/μs
Stored Recovery Charge, Qrr [nC]
Forward Current, IF [A]
5204060
60
70
80
90
TC = 25oC
200A/μs
di/dt = 100A/μs
Reverse Recovery Time, trr [ns]
Forward Current, IF [A]
10-5 10-4 10-3 10-2 10-1 100
1E-3
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.5
8www.fairchildsemi.com
FGH60N60UFDTU_F085 Rev.1.0
FGH60N60UFDTU_F085 — 600V, 60A Field Stop IGBT
Mechanical Dimensions
Figure 24. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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FGH60N60UFDTU_F085 — 600V, 60A Field Stop IGBT
FGH60N60UFDTU_F085 Rev.1.0 www.fairchildsemi.com9
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